Search NASA⌕ Search

SEARCH · Search NASA

Results for “Irradiation induced defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Radiation-induced defects in SiO2 as determined with XPS

An analytical method based on oxide/substrate intensity ratios is used to deduce the product of the atomic number density and electron mean free path as a function of depth, for the cases of device-quality gate oxides grown on Si substrates and irradiated with zero to 20 eV electrons during in situ X-ray photoelectron spectroscopy. These structures had been thinned stepwise to 25-60 A by means of a wet chemical depth-profiling procedure. Si(3+) species are formed in the Si/SiO2 interface region, and their observation during their relaxation and annihilation is correlated with strained Si-O-Si bonds. The observation of bond of cleavage and bond strain gradients in these samples is used to extend silica devitrification models for the explanation of fixed oxide charge generation and interface states.

Grunthaner, F. J.↗
NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗
NASA NTRS1972

Effect of cryogenic irradiation on NERVA structural alloys

Several alloys (Hastelloy X, AISI 347, A-286 bolts, Inconel 718, Al 7039-T63 and Ti-5Al-2.5Sn ELI) were irradiated in liquid nitrogen (140 R) to neutron fluences between 10 to the 17th power and 10 to the 19th power nvt (E greater than 1.0 Mev). After irradiation, tensile properties were obtained in liquid nitrogen without permitting any warmup except for some specimens which were annealed at 540 R. The usual trend of radiation damage typical for materials irradiated at and above room temperature was observed, such as an increase in strength and decrease in ductility. However, the damage at 140 R was greater because this temperature prevented the annealing of radiation-induced defects which occurs above 140 R.

Dixon, C. E.↗
NASA NTRS1972

Irradiation effects studies of NERVA materials

Several materials used in the NERVA project were irradiated at cryogenic temperatures to neutron fluences between 10 to the 17th and 10 to the 19th power newtons per square centimeter. Tensile properties were determined over a temperature range to evaluate the effects of irradiation on the material properties. The expected radiation damage typical of other materials was observed. A general increase in strength and decrease in ductility occurred. The effects at liquid nitrogen temperatures are more pronounced since radiation induced defects are not annealed out.

Demastry, J. A.↗
NASA NTRS1979

High-energy electron-induced damage production at room temperature in aluminum-doped silicon

DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.

Corbett, J. W.↗
NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗
NASA NTRS1980

Annealing of radiation damage in low resistivity silicon solar cells

The reduction of the temperatures required to restore cell performance after irradiation was investigated with emphasis on the annealing characteristics of two groups of cells containing different amounts of oxygen and carbon. Examination of defect behavior in irradiated boron doped silicon leads to the tentative conclusion that further reduction in annealing temperature could be achieved by decreasing the carbon concentration and either neutralizing the divacancy and/or minimizing its formation as a result of irradiation. A significant reduction in the temperature required to remove radiation induced degradation in 0.1 ohm centimeter silicon solar cells was achieved.

Weinberg, I.↗
NASA NTRS2007

Quantifying Low Energy Proton Damage in Multijunction Solar Cells

An analysis of the effects of low energy proton irradiation on the electrical performance of triple junction (3J) InGaP2/GaAs/Ge solar cells is presented. The Monte Carlo ion transport code (SRIM) is used to simulate the damage profile induced in a 3J solar cell under the conditions of typical ground testing and that of the space environment. The results are used to present a quantitative analysis of the defect, and hence damage, distribution induced in the cell active region by the different radiation conditions. The modelling results show that, in the space environment, the solar cell will experience a uniform damage distribution through the active region of the cell. Through an application of the displacement damage dose analysis methodology, the implications of this result on mission performance predictions are investigated.

Messenger, Scott R.↗
NASA NTRS1976

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Beall, J. R.↗
NASA NTRS1994

UV filters for lighting of plants

The wavelength dependent interaction of biological systems with radiation is commonly described by appropriate action spectra. Particularly effective plant responses are obtained for ultraviolet (UV) radiation. Excess shortwave UV-B radiation will induce genetic defects and plant damage. Besides the ecological discussion of the deleterious effects of the excess UV radiation there is increasing interest in horticultural applications of this spectral region. Several metabolic pathways leading to valuable secondary plant products like colors, odors, taste, or resulting in mechanical strength and vitality are triggered by UV radiation. Thus, in ecologically as well as in economically oriented experiments the exact generation and knowledge of the spectral irradiance, particularly near the UV absorption edge, is essential. The ideal filter 'material' to control the UV absorption edge would be ozone itself. However, due to problems in controlling the toxic and chemically aggressive, instable gas, only rather 'small ozone filters' have been realized so far. In artificial plant lighting conventional solid filter materials such as glass sheets and plastic foils (celluloseacetate or cellulosetriacetate) which can be easily handled have been used to absorb the UV-C and the excess shortwave UV-B radiation of the lamp emissions. Different filter glasses are available which provide absorption properties suitable for gradual changes of the spectral UV-B illumination of artificial lighting. Using a distinct set of lamps and filter glasses an acceptable simulation of the UV-B part of natural global radiation can be achieved. The aging of these and other filter materials under the extreme UV radiation in the lamphouse of a solar simulator is presently unavoidable. This instability can be dealt with only by a precise spectral monitoring and by replacing the filters accordingly. For this reason attempts would be useful to develop real ozone filters which can replace glass filters. In any case chamber experiments require a careful selection of the filter material used and must be accompanied by a continuous UV-B monitoring.

Doehring, T.↗
NASA NTRS1982

Annual Conference on Nuclear and Space Radiation Effects, 19th, Las Vegas, NV, July 20-22, 1982, Proceedings

The results of research concerning the effects of nuclear and space radiation are presented. Topics discussed include the basic mechanisms of nuclear and space radiation effects, radiation effects in devices, and radiation effects in microcircuits, including studies of radiation-induced paramagnetic defects in MOS structures, silicon solar cell damage from electrical overstress, radiation-induced charge dynamics in dielectrics, and the enhanced radiation effects on submicron narrow-channel NMOS. Also examined are topics in SGEMP/IEMP phenomena, hardness assurance and testing, energy deposition, desometry, and radiation transport, and single event phenomena. Among others, studies are presented concerning the limits to hardening electronic boxes to IEMP coupling, transient radiation screening of silicon devices using backside laser irradiation, the damage equivalence of electrons, protons, and gamma rays in MOS devices, and the single event upset sensitivity of low power Schottky devices.

Long, D. M.↗
NASA NTRS1984

Study of factors determining the radiation sensitivity of quartz crystal oscillators (A0189)

The correlation between defect cluster concentrations observed for different grades of quartz examined by transmission electron microscopy (TEM) and the electrical stability of quartz resonators exposed to complex radiation in an orbital LDEF was determined. It is demonstrated that the technique TEM provides a powerful method for studying the effect of radiation on crystalline quartz. Two factors suggest that the observed clusters may be responsible for the radiation-induced frequency drift and acoustic absorption effects associated with irradiated quartz resonators: (1) the clusters are expected to be very effective in modifying the piezoelectric properties of quartz because of the large strain fields associated with them; (2) both phenomena appear to be sensitive to the impurity concentration. It is suggested that TEM can be used to classify grades of quartz according to their suitability for use in radiation-hard resonators. This technique may identify the impurities that are responsible and thereby effect an improvement in the stability of quartz oscillators.

Venables, J. D.↗
NASA NTRS2021

Hydroxylation of Apollo 17 Soil Sample 78421 by Solar Wind Protons

Hydroxylation by solar wind protons has been simulated in our laboratory on Apollo 17 lunar sample 78421, a very mature regolith sample that is rich with agglutinates (68%). The goal of this study was to determine the rate of hydroxyl formation and their thermal stability by monitoring changes in the SiOH (hydroxyl) stretching band near 3 μm using diffuse reflectance FTIR spectroscopy (DRIFTS). A 2 keV H2+ ion beam was used to simulate proton implantation on 78421 and on a crushed fused silica sample. We find that the OH band does not change unless the samples have been annealed in vacuum prior to irradiation. Qualitatively, the OH bands for the fused silica and 78421 are very different. The OH band for fused silica is centered at 2.74 μm and is relatively sharp ranging from 2.67 - 3.1 μm at full-width-at-half-maximum (FWHM), while the OH band for 78421 is centered at 3.0 μm and ranges from 2.74 - 3.37 μm at FWHM. The increase in wavelength and broadened nature of the OH band in 78421 may be associated with the OH’s proximity to surface defects and/or lattice vacancies. The lack of the H2O bending mode at 6.1 μm indicates that any adsorbed terrestrial H2O is below our detection limit, and therefore the H2O stretching mode at 2.9 μm is not significantly contributing to the broad 3 μm OH band and implies that proton implantation by itself does not lead to water formation. To simulate the maximum dayside temperature on the lunar surface, the lunar sample was heated after proton irradiation. The proton induced OH concentration was reduced by as much as 25% after heating to 400 K (127 °C).

Apollo 17↗
NASA NTRS2009

Analysis of Chromosomal Aberrations after Low and High Dose Rate Gamma Irradiation in ATM or NBS Suppressed Human Fibroblast Cells

A detailed understanding of the biological effects of heavy nuclei is needed for space radiation protection and for cancer therapy. High-LET radiation produces more complex DNA lesions that may be non-repairable or that may require additional processing steps compared to endogenous DSBs, increasing the possibility of misrepair. Interplay between radiation sensitivity, dose, and radiation quality has not been studied extensively. Previously we studied chromosome aberrations induced by low- and high- LET radiation in several cell lines deficient in ATM (ataxia telangactasia mutated; product of the gene that is mutated in ataxia telangiectasia patients) or NBS (nibrin; product of the gene mutated in the Nijmegen breakage syndrome), and gliomablastoma cells that are proficient or lacking in DNA-dependent protein kinase (DNA-PK) activity. We found that the yields of both simple and complex chromosomal aberrations were significantly increased in the DSB repair defective cells compared to normal cells. The increased aberrations observed for the ATM and NBS defective lines was due to a significantly larger quadratic dose-response term compared to normal fibroblasts for both simple and complex aberrations, while the linear dose-response term was significantly higher in NBS cells only for simple exchanges. These results point to the importance of the functions of ATM and NBS in chromatin modifications that function to facilitate correct DSB repair and minimize aberration formation. To further understand the sensitivity differences that were observed in ATM and NBS deficient cells, in this study, chromosomal aberration analysis was performed in normal lung fibroblast cells treated with KU-55933, a specific ATM kinase inhibitor, or Mirin, an MRN complex inhibitor involved in activation of ATM. We are also testing siRNA knockdown of these proteins. Normal and ATM or NBS suppressed cells were irradiated with gamma-rays and chromosomes were collected with a premature chromosome condensation (PCC) technique at the first mitosis post-irradiation. Chromosomes were analyzed using a multicolor fluorescence in-situ hybridization (mFISH) chromosome painting method. Preliminary analysis showed that chromosomal exchanges were increased in the cells treated with the specific ATM inhibitor. Possible cytogenetic signatures of acute and low dose-rate gamma irradiation in ATM or Nibrin deficient and suppressed cells will be discussed.

Hada, M.↗
NASA NTRS1985

PIN photodiodes irradiated with 40- and 85-MeV protons

PIN photodiodes were bombarded with 40- and 85-MeV protons to a fluence of 1.5 x 10 to the 11th p/sq cm, and the resulting change in spectral response in the near infrared was determined. The photocurrent, dark current, and pulse amplitude were measured as a function of proton fluence. Changes in these three measured properties are discussed in terms of changes in the diode's spectral response, minority carrier diffusion length, and depletion width. A simple model of induced radiation effects is presented which is in good agreement with the experimental results. The model assumes that incident protons produce charged defects within the depletion region simulating donor type impurities.

Reft, C. S.↗
NASA NTRS2001

Light differentially regulates cell division and the mRNA abundance of pea nucleolin during de-etiolation

The abundance of plant nucleolin mRNA is regulated during de-etiolation by phytochrome. A close correlation between the mRNA abundance of nucleolin and mitosis has also been previously reported. These results raised the question of whether the effects of light on nucleolin mRNA expression were a consequence of light effects on mitosis. To test this we compared the kinetics of light-mediated increases in cell proliferation with that of light-mediated changes in the abundance of nucleolin mRNA using plumules of dark-grown pea (Pisum sativum) seedlings. These experiments show that S-phase increases 9 h after a red light pulse, followed by M-phase increases in the plumule leaves at 12 h post-irradiation, a time course consistent with separately measured kinetics of red light-induced increases in the expression of cell cycle-regulated genes. These increases in cell cycle-regulated genes are photoreversible, implying that the light-induced increases in cell proliferation are, like nucleolin mRNA expression, regulated via phytochrome. Red light stimulates increases in the mRNA for nucleolin at 6 h post-irradiation, prior to any cell proliferation changes and concurrent with the reported timing of phytochrome-mediated increases of rRNA abundance. After a green light pulse, nucleolin mRNA levels increase without increasing S-phase or M-phase. Studies in animals and yeast indicate that nucleolin plays a significant role in ribosome biosynthesis. Consistent with this function, pea nucleolin can rescue nucleolin deletion mutants of yeast that are defective in rRNA synthesis. Our data show that during de-etiolation, the increased expression of nucleolin mRNA is more directly regulated by light than by mitosis.

NASA Program Fundamental Space Biology↗
NASA NTRS1980

Radiation damage in lithium-counterdoped n/p silicon solar cells

Lithium counterdoped n+/p silicon solar cells were irradiated with 1 MV electrons and their post irradiation performance and low temperature annealing properties were compared to that of the 0.35 ohm cm control cells. Cells fabricated from float zone and Czochralski grown silicon were investigated. It was found that the float zone cells exhibited superior radiation resistance compared to the control cells, while no improvement was noted for the Czochralski grown cells. Room temperature and 60 C annealing studies were conducted. The annealing was found to be a combination of first and second order kinetics for short times. It was suggested that the principal annealing mechanism was migration of lithium to a radiation induced defect with subsequent neutralization of the defect by combination with lithium. The effects of base lithium gradient were investigated. It was found that cells with negative base lithium gradients exhibited poor radiation resistance and performance compared to those with positive or no lithium gradients; the latter being preferred for overall performance and radiation resistance.

Hermann, A. M.↗
NASA NTRS1993

A detailed study of the photo-injection annealing of thermally diffused InP solar cells

A detailed analysis of the annealing of thermally diffused InP solar cells fabricated by the Nippon Mining Co. is presented. The cells were irradiated with 1 MeV electrons, and the induced degradation is measured using deep level transient spectroscopy and low temperature (86 K) IV measurements. Clear recovery of the photovoltaic parameters is observed during low temperature (T is less than 300 K) solar illuminations (1 sun, AMO) with further recovery at higher temperatures (300 less than T less than 500 K). For example, the output of a cell which was irradiated up to a fluence of 1 x 10(exp 16) cm(sup -2) was observed to recover to within 5 percent of the pre-irradiation output. An apparent correlation between the recovery of I(sub sc) and the annealing of the H4 defect and of the minority carrier trapping centers is observed. An apparent correlation between the recovery of VO, and the annealing of the H5 defect is also observed. These apparent correlations are used to develop a possible model for the mechanism of the recovery of the solar cells.

Walters, R. J.↗