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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Origin of reduced efficiency in GaN-based micro-LEDs studied by scanning near-field optical microscopy

The quantum efficiency of micro-light emitting diodes (micro-LEDs) is lower than that of large area LEDs. This efficiency reduction is typically attributed to the nonradiative Shockley–Read–Hall recombination at the surface defects and current leakage through the sidewall region without a clear distinction between these effects. In this work, we attempt to find out which of these phenomena is most critical for the reduced efficiency of micro-LEDs. This has been done by mapping electroluminescence (EL) and photoluminescence (PL) and measuring PL dynamics in blue GaN micro-LEDs fabricated by dry etching. It has been found that in the as-etched device, the EL intensity is much lower than in devices with KOH etching and atomic layer deposition of SiO 2 . This effect is especially pronounced close to the sidewalls. On the other hand, PL decay times are similar in as-etched and passivated devices, both in their center and at the sidewalls. This allows concluding that the main mechanism of the reduced efficiency of micro-LEDs fabricated by dry etching is the current leakage in the sidewall region and not the nonradiative recombination. The KOH etching has been found to be the most efficient means to eliminate the current leakage.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)

This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.

36 MATERIALS SCIENCE↗
NASA NTRS1996

Light-Emitting Diodes (LED) for Primary Animal Habitat Lighting in Highly Controlled Environments

Significant alterations in Biological Clock responses have been reported following sidereal time changes (e.g., Jet-lag), and exposure to microgravity (e.g., daytime sleepiness). Additionally, light reduces circulating melatonin (spectral specificity greatest between 450-500 nm). It was hypothesized that LEDs can replace the current light sources used in zero gravity and terrestrial research laboratories because of their small size, low mass, low energy consumption and long functional life. This report evaluates the capacity of LEDs to entrain the circadian system of rats as judged by measurement of overt behavioral circadian rhythms (activity, feeding, drinking). These data were collected in highly controlled environments similar to the shuttle Animal Enclosure Modules. Two groups were compared: control - animals exposed to standard cool-white fluorescent lights, and test - animals exposed to LEDs with a spectral power distribution matching the fluorescent lights. Gross locomotor activity, feeding and drinking frequencies were continuously monitored and stored at 10 minute intervals. Animals were exposed to the following photoperiods: 28 days of 12L:12D, 19 days of 24L:0D and 16 days of 12L:12D. Light intensities tested varied between 0.1 to 100 lux. Rats received food and water ad libitum, and temperature and humidity were controlled throughout the study. The general health status of all rats was acceptable for each day of this study. No incidents of aggressive behavior were observed. Growth, locomotor activity, food and water consumption were comparable for all groups of animals, i.e, the circadian characteristics of the animals under these conditions were comparable. These results indicate that LED arrays are as effective in maintaining circadian rhythm stability as the commonly used cool-white fluorescent light sources. LEDs with their flexible spectrum, low energy requirements and minimal heat production have advantages for some chronopharmacology studies and for microgravity animal habitats.

Winget, C. M.↗
NASA NTRS2010

Pilot Study for UVA-LED Disinfection of Escherichia coli in Water for Space and Earth Applications

To test the efficacy of UVA-LED disinfection, a solution of Escherichia coli was pumped through a modified drip flow reactor at a flow rate of 1 ml/min. The experiment was conducted in a controlled environment chamber to ensure that temperature did not cause disinfection. The reactor featured three wells with different treatments: UVA-LED irradiation, UVA-LEDs with Ti02, and UVA-LEDs with nanosilver. Samples from each well were taken throughout a 340 hour period, inactivated, assayed, and analyzed for E. coli disinfection. Results of the duplicate experiments indicated longer exposure times are needed for UVA-LED disinfection of E. coli in water. Further research would consider a longer sampling period and different test conditions, such as increased contact area and various flow rates.

Ragolta, Carolina↗
DOE OSTI2022

Efficiency Improvement Progress in Green, Yellow and Red III Nitride LEDs

Large improvements in the efficiencies of visible light emitting diodes (LEDs) have been realized over the last decade. Extending the range of wavelengths over which efficient emission can be realized continues to be a goal of active research. Efficiency droop refers to a non-thermal decrease in internal quantum efficiency with increasing current density that affects III-nitride LEDs in general, but more severely those with longer emission wavelengths. The so-called green gap is mainly related to the wavelength dependence of efficiency droop. The peak EQE in commercial green LEDs exceeds 60% but corresponds to a current density that is an order of magnitude lower than required for applications. In this presentation, we will review some of the underlying physics that contribute to the wavelength dependence of droop. We will discuss some challenges in the development of long wavelength III-nitride LEDs and possible strategies to mitigate efficiency droop based on the understanding that nonradiative Auger recombination is the root cause. One general strategy is to engineer the multi-quantum well active region to minimize the average carrier density. Another approach is to design wells with a more favorable balance between the radiative and Auger coefficients. Finally, we will present the current status of the performance of green, yellow and red III-Nitride LEDs.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2019

Accelerated Stress Testing of Multi-Source LED Products: Round 2

The second report in a series that uses accelerated stress testing (AST) to provide insights into the long-term behavior of commercial products utilizing different types of mid-power LEDs (MP-LEDs) integrated into the same LED module. The first report in the series provides initial AST results from two commercial lamps intended for use in horticulture applications and one tunable-white LED module intended for use in educational and office lighting applications. The second report focuses on determining the mechanisms of optical change in the same products.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2019

Accelerated Stress Testing of Multi-Source LED Products; Round 2

Second report in a series that uses accelerated stress testing (AST) to provide insights into the long-term behavior of commercial products utilizing different types of mid-power LEDs (MP-LEDs) integrated into the same LED module. The first report in the series provides initial AST results from two commercial lamps intended for use in horticulture applications and one tunable-white LED module intended for use in educational and office lighting applications. The second report focuses on determining the mechanisms of optical change in the same products.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗
DOE OSTI2023

Vertical full-colour micro-LEDs via 2D materials-based layer transfer

Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. Furthermore, these results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.

42 ENGINEERING↗
DOE OSTI2022

Improved Vertical Carrier Transport for Green III-Nitride LEDs Using ( In , Ga ) N Alloy Quantum Barriers

We report on experimental and simulation-based results using ( In , Ga ) N alloy quantum barriers in c -plane green light-emitting diode (LED) structures as a means to improve vertical carrier transport and reduce forward voltage ( V F ) . Three-dimensional device simulations that include random alloy fluctuations are used to understand carrier behavior in a disordered potential. The simulated current density–voltage ( J - V ) characteristics and modified electron-hole overlap | F mod | 2 indicate that increasing the indium fraction in the ( In , Ga ) N quantum barriers leads to a reduced polarization discontinuity at the interface between the quantum barrier and quantum well, thereby reducing V F and improving | F mod | 2 . Maps of electron and hole current through the device show a relatively homogenous distribution in the X Y plane for structures using Ga N quantum barriers; in contrast, preferential pathways for vertical transport are identified in structures with ( In , Ga ) N barriers as regions of high and low current. A positive correlation between hole (electron) current in the p -side ( n -side) barrier and indium fraction reveals that preferential pathways exist in regions of high indium content. Furthermore, a negative correlation between the strain ε z z and indium fraction shows that high indium content regions have reduced strain-induced piezoelectric polarization in the Z direction due to the mechanical constraint of the surrounding lower indium content regions. Experimentally, multiple quantum well green LEDs with ( In , Ga ) N quantum barriers exhibit lower V F and blue-shifted wavelengths relative to LEDs with Ga N quantum barriers, consistent with simulation data. These results can be used to inform heterostructure design of low V F , long-wavelength LEDs and provide important insight into the nature of carrier transport in III-nitride alloy materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Research note: LED lighting – A global enterprise

There is considerable focus on technology manufacturing locations and the value in funding innovation when upstream products are not manufactured within a domestic economy. Light-emitting diodes (LEDs) are such an upstream product. Here, we evaluate the value added along the supply chain of luminaires, a product that utilizes LEDs, using bottom-up cost modelling. Coupling the results with analysis of shipping cost and time, this analysis examines how advances in LEDs can incentivize LED luminaire adoption leading to the potential for significant domestic manufacturing effects even if the upstream products are produced in other economies.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
NASA NTRS2015

NASA Ames UV-LED Poster Overview

UV-LED is a small satellite technology demonstration payload being flown on the Saudisat-4 spacecraft that is demonstrating non-contacting charge control of an isolated or floating mass using new solid-state ultra-violet light emitting diodes (UV-LEDs). Integrated to the rest of the spacecraft and launched on a Dnepr in June 19, 2014, the project is a collaboration between the NASA Ames Research Center (ARC), Stanford University, and King Abdulaziz City for Science and Technology (KACST). Beginning with its commissioning in December, 2015, the data collected by UV-LED have validated a novel method of charge control that will improve the performance of drag-free spacecraft allowing for concurrent science collection during charge management operations as well as reduce the mass, power and volume required while increasing lifetime and reliability of a charge management subsystem. UV-LED continues to operate, exploring new concepts in non-contacting charge control and collecting data crucial to understanding the lifetime of ultra-violet light emitting diodes in space. These improvements are crucial to the success of ground breaking missions such as LISA and BBO, and demonstrates the ability of low cost small satellite missions to provide technological advances that far exceed mission costs.

KACST↗
DOE OSTI2022

From lab to lamp: Understanding downconverter degradation in LED packages

Downconverters, primarily inorganic phosphors, are critical components in white solid-state LED-based lighting and liquid crystal display backlights. Research efforts have led to a fundamental understanding of a downconverter's absorption, photoluminescence, and efficiency as a function of composition, structure, and processing conditions. However, considerably less work has focused on the reliability of phosphors once they are incorporated into LED packages. Solving these issues is often the final step before the commercialization of new materials, but the significant resources and time required to evaluate and mitigate materials failure are rarely discussed in the literature. In this Perspective, we discuss the need for conducting downconverter reliability testing and the potential of accelerating, screening, and understanding downconverter failure modes. Our focus highlights the mechanisms of failure and discusses how this influences materials selection and the design of different LED packages. We also stress the potential for accelerated reliability testing protocols and note the potential role first-principles calculations and data-driven models could play in establishing the compositional-processing trends for different aspects of downconverter reliability. In conclusion, we close with possible research directions that could improve downconverter reliability and emphasize the importance of assessing a material's (chemical) stability where multiple manufacturing and processing steps can dictate system performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗
DOE OSTI2025

PMT calibration for the JSNS^2-II far detector with an embedded LED system

The JSNS^2-II (the second phase of JSNS^2, J-PARC Sterile Neutrino Search at J-PARC Spallation Neutron Source) is an experiment aimed at searching for sterile neutrinos. Here, this experiment has entered its second phase, employing two liquid scintillator detectors located at near and far positions from the neutrino source. Recently, the far detector of the experiment has been completed and is currently in the calibration phase. The following properties of all functioning Photo-Multiplier-Tubes (PMTs) to detect the neutrino events in the far detector have been calibrated: PMT gain, its dependence of supplied High Voltage (HV), Peak-to-Valley (PV), and signal timing. This paper presents a detailed description of the calibration process utilizing the LED system. The LED system of the far detector uses two Ultra-Violet (UV) LEDs, which are effective in calibrating all of the PMTs at once. The UV light is converted into the visible light wavelengths inside liquid scintillator via the wavelength shifters, providing pseudo-isotropic light. To achieve a good energy resolution for physics events, a relative gain adjustment of up to 10% is required for all functioning PMTs. This will be achieved using the HV curves measured and the results of the LED calibration. The Peak-to-Valley (PV) ratio values, which distinguish the single photo-electron signal from the pedestal, are similar to those from the production company. Additionally, the precision of the PMT signal timing is measured to be 2.1 ns. This meets the event reconstruction requirement of 10 ns.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2019

High-Voltage AlInGaN LED Chips

A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

The Energy and Operational Impacts of Using 0-10V Control for LED Streetlights

Lighting systems have historically utilized either a proprietary control method, or one of a handful of standardized methods (e.g., 0-10V, DALI, DMX512) aimed at facilitating vendor interoperability. The utility and market success of the standardized methods has been limited for a variety of reasons. Although 0-10V is presently the most commonly available control interface for indoor and outdoor products in North America – even after the emergence of LED products and “connected lighting systems” with more modern network interfaces and luminaire-level sensors and intelligence – the use of 0-10V methods has significant tradeoffs. For instance, it is difficult to predict relative luminaire light output and input power at any particular control voltage, and performance across luminaires is inconsistent. This study characterizes 23 LED streetlights that claimed dimmability via a 0-10V interface, quantifies the performance variation found in market-available LED drivers, and explores the potential impact of the most recent 0-10V voluntary standard (ANSI C137.1-2022). Notably, the tested products were all manufactured prior to the release of this standard, and thus do not make compliance claims. Variation in response to 0-10V control voltages was expected to be more significant across different make/model luminaires than different units of the same make/model; the test population was structured based on this expectation. The 23 tested luminaires comprised 21 unique make/model streetlights from 14 different manufacturers. Three samples of one make/model streetlight were included in the test population to facilitate a limited exploration of unit-to-unit variation. The 21 unique make/model luminaires contained 20 unique make/model LED drivers from eight different driver manufacturers. Luminaire input power and current were measured at 11 control voltages (0.5 V and 1–10 V in 1 V increments).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2024

Upgrading Linear Fluorescent Fixtures to LED in Schools

Lighting is a key component to creating a functional and high-quality learning environment for students and staff. Light-emitting diode or LED lighting fixtures have gained traction in common commercial building applications and quality replacement options for common fixture types are widely available. Compared to most fluorescent lighting systems, using LEDs can reduce energy consumption and therefore decrease carbon dioxide emissions, reduce maintenance and operation cost, and improve the visual appearance and lighting quality of the classroom and school environments. When additional controls are considered, more energy can be saved and some controls, like dimming, can offer amenities to occupants. As LEDs become an even more prominent lighting technology, fluorescent equipment may become challenging or expensive to replace. Additionally, school buildings are typically in use for many decades; maintaining a long-term view can be important when deciding which upgrade path to take. This fact sheet provides guidance on the various factors to consider when deciding on an LED upgrade for fluorescent lighting systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗