Extended long-wavelength lambda = 11-15-micron GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors
Success has been achieved in extending the spectral wavelength of GaAs/Al(x)Ga(1-x)As quantum-well infrared photodetectors to significantly longer wavelengths of 11-15 micron. High responsivity of 0.5 A/W, high quantum efficiency of 12 percent, and high detectivity as well as an excellent noise equivalent temperature difference of 4 mK have been achieved at T = 50 K. High performance of 19 mK has also been achieved at an even higher temperature of 60 K.