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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Working and strategic memory deficits in schizophrenia

Working memory and its contribution to performance on strategic memory tests in schizophrenia were studied. Patients (n = 18) and control participants (n = 15), all men, received tests of immediate memory (forward digit span), working memory (listening, computation, and backward digit span), and long-term strategic (free recall, temporal order, and self-ordered pointing) and nonstrategic (recognition) memory. Schizophrenia patients performed worse on all tests. Education, verbal intelligence, and immediate memory capacity did not account for deficits in working memory in schizophrenia patients. Reduced working memory capacity accounted for group differences in strategic memory but not in recognition memory. Working memory impairment may be central to the profile of impaired cognitive performance in schizophrenia and is consistent with hypothesized frontal lobe dysfunction associated with this disease. Additional medial-temporal dysfunction may account for the recognition memory deficit.

Memory Disorders/etiology/physiopathology↗
NASA NTRS1976

Shared memory for a fault-tolerant computer

A system is described for sharing a memory in a fault-tolerant computer. The memory is under the direct control and monitoring of error detecting and error diagnostic units in the fault-tolerant computer. This computer verifies that data to and from the memory is legally encoded and verifies that words read from the memory at a desired address are, in fact, actually delivered from that desired address. The means are provided for a second processor, which is independent of the direct control and monitoring of the error checking and diagnostic units of the fault-tolerant computer, and to share the memory of the fault-tolerant computer. Circuitry is included to verify that: (1) the processor has properly accessed a desired memory location in the memory; (2) a data word read-out from the memory is properly coded; and (3) no inactive memory was erroneously outputting data onto the shared memory bus.

Gilley, G. C.↗
NASA NTRS1988

Sparse distributed memory prototype: Principles of operation

Sparse distributed memory is a generalized random access memory (RAM) for long binary words. Such words can be written into and read from the memory, and they can be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original right address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech and scene analysis, in signal detection and verification, and in adaptive control of automated equipment. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. The research is aimed at resolving major design issues that have to be faced in building the memories. The design of a prototype memory with 256-bit addresses and from 8K to 128K locations for 256-bit words is described. A key aspect of the design is extensive use of dynamic RAM and other standard components.

Flynn, Michael J.↗
NASA NTRS1989

A class Hierarchical, object-oriented approach to virtual memory management

The Choices family of operating systems exploits class hierarchies and object-oriented programming to facilitate the construction of customized operating systems for shared memory and networked multiprocessors. The software is being used in the Tapestry laboratory to study the performance of algorithms, mechanisms, and policies for parallel systems. Described here are the architectural design and class hierarchy of the Choices virtual memory management system. The software and hardware mechanisms and policies of a virtual memory system implement a memory hierarchy that exploits the trade-off between response times and storage capacities. In Choices, the notion of a memory hierarchy is captured by abstract classes. Concrete subclasses of those abstractions implement a virtual address space, segmentation, paging, physical memory management, secondary storage, and remote (that is, networked) storage. Captured in the notion of a memory hierarchy are classes that represent memory objects. These classes provide a storage mechanism that contains encapsulated data and have methods to read or write the memory object. Each of these classes provides specializations to represent the memory hierarchy.

Russo, Vincent F.↗
NASA NTRS1990

A Byzantine resilient processor with an encoded fault-tolerant shared memory

The memory requirements for ultra-reliable computers are expected to increase due to future increases in mission functionality and operating-system requirements. This increase will have a negative effect on the reliability and cost of the system. Increased memory size will also reduce the ability to reintegrate a channel after a transient fault, since the time required to reintegrate a channel in a conventional fault-tolerant processor is dominated by memory realignment time. A Byzantine Resilient Fault-Tolerant Processor with Fault-Tolerant Shared Memory (FTP/FTSM) is presented as a solution to these problems. The FTSM uses an encoded memory system, which reduces the memory requirement by one-half compared to a conventional quad-FTP design. This increases the reliability and decreases the cost of the system. The realignment problem is also addressed by the FTSM. Because any single error is corrected upon a read from the FTSM, a faulty channel's corrupted memory does not need realignment before reintegration of the faulty channel. A combination of correct-on-access and background scrubbing is proposed to prevent the accumulation of transient errors in the memory. With a hardware-implemented scrubber, the scrubbing cycle time, and therefore the memory fault latency, can be upper-bounded at a small value. This technique increases the reliability of the memory system and facilitates validation of its reliability model.

Butler, Bryan↗
NASA NTRS1989

Sparse distributed memory: Principles and operation

Sparse distributed memory is a generalized random access memory (RAM) for long (1000 bit) binary words. Such words can be written into and read from the memory, and they can also be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original write address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech recognition and scene analysis, in signal detection and verification, and in adaptive control of automated equipment, in general, in dealing with real world information in real time. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. Major design issues were resolved which were faced in building the memories. The design is described of a prototype memory with 256 bit addresses and from 8 to 128 K locations for 256 bit words. A key aspect of the design is extensive use of dynamic RAM and other standard components.

Flynn, M. J.↗
NASA NTRS1990

Integrating Commercial Off-The-Shelf (COTS) graphics and extended memory packages with CLIPS

This paper addresses the question of how to mix CLIPS with graphics and how to overcome PC's memory limitations by using the extended memory available in the computer. By adding graphics and extended memory capabilities, CLIPS can be converted into a complete and powerful system development tool, on the other most economical and popular computer platform. New models of PCs have amazing processing capabilities and graphic resolutions that cannot be ignored and should be used to the fullest of their resources. CLIPS is a powerful expert system development tool, but it cannot be complete without the support of a graphics package needed to create user interfaces and general purpose graphics, or without enough memory to handle large knowledge bases. Now, a well known limitation on the PC's is the usage of real memory which limits CLIPS to use only 640 Kb of real memory, but now that problem can be solved by developing a version of CLIPS that uses extended memory. The user has access of up to 16 MB of memory on 80286 based computers and, practically, all the available memory (4 GB) on computers that use the 80386 processor. So if we give CLIPS a self-configuring graphics package that will automatically detect the graphics hardware and pointing device present in the computer, and we add the availability of the extended memory that exists in the computer (with no special hardware needed), the user will be able to create more powerful systems at a fraction of the cost and on the most popular, portable, and economic platform available such as the PC platform.

Callegari, Andres C.↗
NASA NTRS2001

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Rao, Vikram↗
NASA NTRS2007

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗
NASA NTRS2005

Flash memory management system and method utilizing multiple block list windows

The present invention provides a flash memory management system and method with increased performance. The flash memory management system provides the ability to efficiently manage and allocate flash memory use in a way that improves reliability and longevity, while maintaining good performance levels. The flash memory management system includes a free block mechanism, a disk maintenance mechanism, and a bad block detection mechanism. The free block mechanism provides efficient sorting of free blocks to facilitate selecting low use blocks for writing. The disk maintenance mechanism provides for the ability to efficiently clean flash memory blocks during processor idle times. The bad block detection mechanism provides the ability to better detect when a block of flash memory is likely to go bad. The flash status mechanism stores information in fast access memory that describes the content and status of the data in the flash disk. The new bank detection mechanism provides the ability to automatically detect when new banks of flash memory are added to the system. Together, these mechanisms provide a flash memory management system that can improve the operational efficiency of systems that utilize flash memory.

Chow, James↗
NASA NTRS2006

Design of a Multi-Level/Analog Ferroelectric Memory Device

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗
DOE OSTI2025

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory management, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. The framework includes tools to monitor the capacity and usage of individual data objects, routines that aggregate and convert this information into tier recommendations for the host platform, and mechanisms to enforce these recommendations according to user-selected policies. Moreover, the developed tools and techniques are fully automatic, work on standard Linux systems, and do not require modification or recompilation of existing software. Using this framework, this study evaluates and compares the impact of a variety of design choices for memory tiering, including different policies for prioritizing objects for the fast memory tier as well as the frequency and timing of migration events. In conclusion, the results, collected on a modern Intel platform with conventional DDR4 SDRAM as well as Intel Optane NVRAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared with standard hardware- and software-directed data-tiering strategies for a diverse set of memory-intensive workloads.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2024

Gravitational-wave and Gravitational-wave Memory Signatures of Core-collapse Supernovae

Abstract In this paper, we calculate the energy, signal-to-noise ratio (SNR), detection range, and angular anisotropy of the matter, matter memory, and neutrino memory gravitational-wave (GW) signatures of 21 three-dimensional initially nonrotating core-collapse supernova (CCSN) models carried to late times. We find that inferred energy, SNR, and detection range are angle-dependent quantities, and that the spread of possible energy, signal to noise, and detection ranges across all viewing angles generally increases with progenitor mass. When examining the low-frequency matter memory and neutrino memory components of the signal, we find that the neutrino memory is the most detectable component of a CCSN GW signal, and that DECIGO is best equipped to detect both matter memory and neutrino memory. Moreover, we find that the polarization angle between the h + and h × strains serves as a unique identifier of matter and neutrino memory. Finally, we develop a Galactic density- and stellar mass-weighted formalism to calculate the rate at which we can expect to detect CCSN GW signals with the Advanced Laser Interferometer Gravitational-Wave Observatory (aLIGO). When considering only the matter component of the signal, the aLIGO detection rate is around 65% of the total Galactic supernova rate, but increases to 90% when incorporating the neutrino memory component. We find that all future detectors (Einstein Telescope, Cosmic Explorer, DECIGO) will be able to detect CCSN GW signals from the entire Galaxy, and for the higher-mass progenitors even into the Local Group of galaxies.

Choi, Lyla (ORCID:0000000153860133)↗
NASA NTRS1975

System applications of the fault tolerant memory

Conventional memory technologies currently employed in aerospace applications contribute at least fifty percent to system unreliability (where the system includes CPU, I/O and memory). A fault tolerant memory performs both error correction and memory replacement at the bit plane level. To determine the effects of system design of using a fault tolerant memory in space applications, analysis was performed to determine tradeable hardware configurations that meet the reliability goals of each program. The candidate configurations, which included redundant elements of the computer system with both conventional and fault tolerant memories, were then traded in terms of selection criteria of cost, weight, volume, and power. These trade studies demonstrated that a fault tolerant memory provided significant advantages in terms of cost, weight, and volume. The memory selected for this analysis was a recently developed five fault tolerant memory.

Murphy, L. J.↗
NASA NTRS1982

A generalized memory test algorithm

A general algorithm for testing digital computer memory is presented. The test checks that (1) every bit can be cleared and set in each memory work, and (2) bits are not erroneously cleared and/or set elsewhere in memory at the same time. The algorithm can be applied to any size memory block and any size memory word. It is concise and efficient, requiring the very few cycles through memory. For example, a test of 16-bit-word-size memory requries only 384 cycles through memory. Approximately 15 seconds were required to test a 32K block of such memory, using a microcomputer having a cycle time of 133 nanoseconds.

Milner, E. J.↗
NASA NTRS1984

Automatic multi-banking of memory for microprocessors

A microprocessor system is provided with added memories to expand its address spaces beyond its address word length capacity by using indirect addressing instructions of a type having a detectable operations code and dedicating designated address spaces of memory to each of the added memories, one space to a memory. By decoding each operations code of instructions read from main memory into a decoder to identify indirect addressing instructions of the specified type, and then decoding the address that follows in a decoder to determine which added memory is associated therewith, the associated added memory is selectively enabled through a unit while the main memory is disabled to permit the instruction to be executed on the location to which the effective address of the indirect address instruction points, either before the indirect address is read from main memory or afterwards, depending on how the system is arranged by a switch.

Wiker, G. A.↗
NASA NTRS1987

The capacity of the Hopfield associative memory

Techniques from coding theory are applied to study rigorously the capacity of the Hopfield associative memory. Such a memory stores n-tuple of + or - 1s. The components change depending on a hard-limited version of linear functions of all other components. With symmetric connections between components, a stable state is ultimately reached. By building up the connection matrix as a sum-of-outer products of m fundamental memories, it may be possible to recover a certain one of the m memories by using an initial n-tuple probe vector less than a Hamming distance n/2 away from the fundamental memory. If m fundamental memories are chosen at random, the maximum asymptotic value of m in order that most of the m original memories are exactly recoverable is n/(2 log n). With the added restriction that every one of the m fundamental memories be recoverable exactly, m can be no more than n/(4 log n) asymptotically as n approaches infinity. Extensions are also considered, in particular to capacity under quantization of the outer-product connection matrix. This quantized memory-capacity problem is closely related to the capacity of the quantized Gaussian channel.

Mceliece, Robert J.↗
NASA NTRS1990

Sparse distributed memory overview

The Sparse Distributed Memory (SDM) project is investigating the theory and applications of massively parallel computing architecture, called sparse distributed memory, that will support the storage and retrieval of sensory and motor patterns characteristic of autonomous systems. The immediate objectives of the project are centered in studies of the memory itself and in the use of the memory to solve problems in speech, vision, and robotics. Investigation of methods for encoding sensory data is an important part of the research. Examples of NASA missions that may benefit from this work are Space Station, planetary rovers, and solar exploration. Sparse distributed memory offers promising technology for systems that must learn through experience and be capable of adapting to new circumstances, and for operating any large complex system requiring automatic monitoring and control. Sparse distributed memory is a massively parallel architecture motivated by efforts to understand how the human brain works. Sparse distributed memory is an associative memory, able to retrieve information from cues that only partially match patterns stored in the memory. It is able to store long temporal sequences derived from the behavior of a complex system, such as progressive records of the system's sensory data and correlated records of the system's motor controls.

Raugh, Mike↗