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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2002

Performance Evaluation of Remote Memory Access (RMA) Programming on Shared Memory Parallel Computers

The purpose of this study is to evaluate the feasibility of remote memory access (RMA) programming on shared memory parallel computers. We discuss different RMA based implementations of selected CFD application benchmark kernels and compare them to corresponding message passing based codes. For the message-passing implementation we use MPI point-to-point and global communication routines. For the RMA based approach we consider two different libraries supporting this programming model. One is a shared memory parallelization library (SMPlib) developed at NASA Ames, the other is the MPI-2 extensions to the MPI Standard. We give timing comparisons for the different implementation strategies and discuss the performance.

Jin, Hao-Qiang↗
NASA NTRS2010

Memories and NASA Spacecraft: A Description of Memories, Radiation Failure Modes, and System Design Considerations

As NASA has evolved it's usage of spaceflight computing, memory applications have followed as well. In this slide presentation, the history of NASA's memories from magnetic core and tape recorders to current semiconductor approaches is discussed. There is a brief description of current functional memory usage in NASA space systems followed by a description of potential radiation-induced failure modes along with considerations for reliable system design.

LaBel, Kenneth A.↗
NASA NTRS2010

Improvement in the Shape Memory Response of Ti50.5Ni24.5Pd25 High-Temperature Shape Memory Alloy with Scandium Microalloying

A Ti(50.5)Ni(24.5)Pd25 high-temperature shape memory alloy (HTSMA) is microalloyed with 0.5 at. pct scandium (Sc) to enhance its shape-memory characteristics, in particular, dimensional stability under repeated thermomechanical cycles. For both Ti(50.5)Ni(24.5)Pd25 and the Sc-alloyed material, differential scanning calorimetry is conducted for multiple cycles to characterize cyclic stability of the transformation temperatures. The microstructure is evaluated using electron microscopy, X-ray diffractometry, and wavelength dispersive spectroscopy. Isobaric thermal cycling experiments are used to determine transformation temperatures, dimensional stability, and work output as a function of stress. The Sc-doped alloy displays more stable shape memory response with smaller irrecoverable strain and narrower thermal hysteresis than the baseline ternary alloy. This improvement in performance is attributed to the solid solution hardening effect of Sc.

Atli, K. C.↗
NASA NTRS2011

Shape Memory Characteristics of Ti(sub 49.5)Ni(sub 25)Pd(sub 25)Sc(sub 0.5) High-Temperature Shape Memory Alloy After Severe Plastic Deformation

A Ti(49.5)Ni25Pd25Sc(0.5) high-temperature shape memory alloy is thermomechanically processed to obtain enhanced shape-memory characteristics: in particular, dimensional stability upon repeated thermal cycles under constant loads. This is accomplished using severe plastic deformation via equal channel angular extrusion (ECAE) and post-processing annealing heat treatments. The results of the thermomechanical experiments reveal that the processed materials display enhanced shape memory response, exhibiting higher recoverable transformation and reduced irrecoverable strain levels upon thermal cycling compared with the unprocessed material. This improvement is attributed to the increased strength and resistance of the material against defect generation upon phase transformation as a result of the microstructural refinement due to the ECAE process, as supported by the electron microscopy observations.

Atli, K. C.↗
DOE OSTI2022

Memory row recording for mitigating crosstalk in dynamic random access memory

A method includes adding a set of one or more victim rows to a first probabilistic filter and to a second probabilistic filter, in response to a memory access request, identifying a candidate victim row adjacent to a memory address specified by a memory access request, identifying the candidate victim row as a victim row in the set of victim rows based on performing a lookup of the candidate victim row in a selected filter, where the selected filter includes one of the first probabilistic filter and the second probabilistic filter, in response to identifying the candidate row as the victim row, enabling a row hammering countermeasure, clearing the first probabilistic filter in each of a first set of time periods, and clearing the second probabilistic filter in each of a second set of time periods interleaved with the first set of time periods.

SeyedzadehDelcheh, SeyedMohammad↗
NASA NTRS1976

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Besser, P. J.↗
NASA NTRS1984

Simulations for Full Unit-memory and Partial Unit-memory Convolutional Codes with Real-time Minimal-byte-error Probability Decoding Algorithm

A program which was written to simulate Real Time Minimal-Byte-Error Probability (RTMBEP) decoding of full unit-memory (FUM) convolutional codes on a 3-bit quantized AWGN channel is described. This program was used to compute the symbol-error probability of FUM codes and to determine the signal to noise (SNR) required to achieve a bit error rate (BER) of 10 to the minus 6th power for corresponding concatenated systems. A (6,6/30) FUM code, 6-bit Reed-Solomon code combination was found to achieve the required BER at a SNR of 1.886 dB. The RTMBEP algorithm was then modified for decoding partial unit-memory (PUM) convolutional codes. A simulation program was also written to simulate the symbol-error probability of these codes.

Vo, Q. D.↗
DOE OSTI2020

The microstructure of a selective laser melting (SLM)-fabricated NiTi shape memory alloy with superior tensile property and shape memory recoverability

A selective laser melting (SLM)-fabricated NiTi with superior tensile property and shape memory recoverability was obtained by using a unique stripe rotation scanning strategy. Here, the alloy characteristics, formation mechanisms and evolution in terms of twins, dislocations and precipitations of the alloy were systematically studied. Compared to the conventional smelting-followed-by-machining, the SLM fabrication process involves rapid solidification and repeated heating, which confer distinctive characteristics to the microstructures of SLM-fabricated NiTi alloys. Rapid solidification promotes the formation of a supersaturation solid solution matrix containing a high concentration vacancies, which in turn aggregate to generate a high density of dislocations. During subsequent repeated heating stages, these dislocations occur thermal motion along three directions of <001 > , <111> and <110 >, leading to the formation of thermal kinks, helical dislocations and wave morphology. Simultaneously, precipitated particles Ti 3 Ni 4 repeatedly nucleate and heterogeneous grow with the movement of dislocation. Such precipitation behavior, termed repeated precipitation, has not been previously reported in the conventional NiTi alloys, suggesting that it could be a unique characteristic of such alloy. After martensitic transformation, only two twins, {1 1¯ 1} type I twin and compound twin, are detected. The twinning lamellae of these two twins, where precipitation and dislocation pile-ups exist, often have uneven thickness and chaotic arrangement. Besides, the unique self-accommodated microstructures, such as secondary {1 1¯ 1} type I twin and compound twin with “herring-bone’’ lamellae, which often appear in the deformed or nanocrystalline NiTi, can also be observed. These unique microstructures may confer the distinctive properties to the SLM-fabricated NiTi.

36 MATERIALS SCIENCE↗
DOE OSTI2025

ScaWL: Scaling k-WL (Weisfeiler-Lehman) Algorithms in Memory and Performance on Shared and Distributed-Memory Systems

The k-dimensional Weisfeiler-Lehman (k-WL) algorithm—developed as an efficient heuristic for testing if two graphs are isomorphic—is a fundamental kernel for node embedding in the emerging field of graph neural networks. Unfortunately, the k-WL algorithm has exponential storage requirements, limiting the size of graphs that can be handled. This work presents a novel k-WL scheme with a storage requirement orders of magnitude lower while maintaining the same accuracy as the original k-WL algorithm. Due to the reduced storage requirement, our scheme allows for processing much bigger graphs than previously possible on a single compute node. For even bigger graphs, we provide the first distributed-memory implementation. Our k-WL scheme also has significantly reduced communication volume and offers high scalability. Our experimental results demonstrate that our approach is significantly faster and has superior scalability compared to five other implementations employing state-of-the-art techniques.

algorithims↗
NASA NTRS2022

Ruggedness Evaluation of ASTM International Standard Test Methods for Shape Memory Materials: E3097 Standard Test Method for Mechanical Uniaxial Constant Force Thermal Cycling of Shape Memory Alloys

This paper evaluates the ruggedness testing of the newly released ASTM International E3097 Standard Test Method for Mechanical Uniaxial Constant Force Thermal Cycling of Shape Memory Alloys. The ruggedness experiment was designed with eight runs in two replicates, consisting of seven factors of strain rate (ė), heating and cooling rates (Ṫ(heat) and Ṫ(cool), respectively), upper and lower cycle temperatures (UCT and LCT, respectively), hold time (thold), and minimum load (Fmin) imparted on the samples. The results indicate that the hold time factor had no effect on any result variable. The minimum load factor, alternatively, had the greatest effect on several result variables, with the greatest influence on the strains at martensite start and finish (strain variation ~0.1 percent), and the strains at the upper and lower cycle temperatures (strain variation of 0.14 percent). The UCT was found to have a large effect on the austenite and martensite finish tangent line and data intersect, denoted by Af* and Mf*, by ~17 and 4 °C, respectively. The testing methodology, analysis techniques, and resulting conclusions on the ruggedness of the test methods are presented.

shape memory alloy↗
NASA NTRS2023

Ruggedness Evaluation of ASTM International Standard Test Methods for Shape Memory Materials: E3098 Standard Test Method for Mechanical Uniaxial Pre-strain and Thermal Free Recovery of Shape Memory Alloys

This paper evaluates the ruggedness testing of the recently released ASTM International E3098 Standard Test Method for Mechanical Uniaxial Pre-strain and Thermal Free Recovery of Shape Memory Alloys. The ruggedness experiment was designed with eight runs in two replicates, consisting of seven factors: strain rate (ė), heating and cooling rates (Ṫ heat and Ṫ cool , respectively), upper and lower cycle temperatures (UCT and LCT, respectively), hold time (t hold ), and minimum load (F min ) imparted on the samples. The results indicate that the strain rate factor had no effect on any result variable, whereas the minimum load factor had a large effect on several result variables including the austenite start and martensite finish temperatures as well as most of the strain measurements from the thermal cycle. The lower cycle temperature factor had a large effect on the stress at maximum strain during pre-straining (e i ), denoted by S i , at ~7.2 MPa, as well as the A f , at 5.47 °C. Closely following the LCT effect, Ṫ heat was found to have a large effect on the austenite start temperature (A s ), at a value of ~2.72 °C. The testing methodology, analysis techniques, and resulting conclusions on the ruggedness of the test method are presented.

Shape memory alloys↗
DOE OSTI2019

Photo‐/Thermal‐Responsive Field‐Effect Transistor upon Blending Polymeric Semiconductor with Hexaarylbiimidazole toward Photonically Programmable and Thermally Erasable Memory Device

Abstract It is shown that the semiconducting performance of field‐effect transistors (FETs) with PDPP4T (poly(diketopyrrolopyrrole‐quaterthiophene)) can be reversibly tuned by UV light irradiation and thermal heating after blending with the photochromic hexaarylbiimidazole compound ( p ‐NO 2 ‐HABI). A photo‐/thermal‐responsive FET with a blend thin film of PDPP4T and p ‐NO 2 ‐HABI is successfully fabricated. The transfer characteristics are altered significantly with current enhanced up to 10 6 ‐fold at V G = 0 V after UV light irradiation. However, further heating results in the recovery of the transfer curve. This approach can be extended to other semiconducting polymers such as P3HT (poly(3‐hexyl thiophene)), PBTTT (poly(2,5‐bis(3‐tetradecylthiophen‐2‐yl)thieno[3,2‐b] thiophene)) and PDPPDTT (poly(diketopyrrolopyrrole‐dithienothiophene)). It is hypothesized that TPIRs (2,4,5‐triphenylimidazolyl radicals) formed from p ‐NO 2 ‐HABI after UV light irradiation can interact with charge defects at the gate dielectric–semiconductor interface and those in the semiconducting layer to induce more hole carriers in the semiconducting channel. The application of the blend thin film of PDPP4T and p ‐NO 2 ‐HABI is further demonstrated to fabricate the photonically programmable and thermally erasable FET‐based nonvolatile memory devices that are advantageous in terms of i) high ON/OFF current ratio, ii) nondestructive reading at low electrical bias, and iii) reasonably highly stable ON‐state and OFF‐state.

Liu, Yidong↗
DOE OSTI2020

Time-Sequenced Flow Field Prediction in an Optima Spark-Ignition Direct-Injection Engine Using Bidirectional Recurrent Neural Network (bi-RNN) with Long Short-Term Memory

To further improve the energy conversion efficiency of internal combustion engine, the transient and complex air flow movement inside the cylinder needs to be better understood and controlled. Although the in-cylinder flow fields are highly stochastic with strong cycle-to-cycle fluctuations, machine learning can still provide an efficient way to learn and regress the complex flow movement process inside the cylinder. In this work, a bidirectional recurrent neural network (bi-RNN) model with long short-term memory was applied to predict the in-cylinder flow fields at different time steps using training data from mull-cycle particle image velocimetry (PIV) measurements. To evaluate the agreement between the true and predicted flow fields, structure and magnitude comparison indices are calculated both globally and locally. The comparison results show that the bi-RNN model can accurately predict the bulk flow and vortex motions from early intake stroke to compression stroke. This work demonstrates that the machine learning model has the potential to predict the underlying dynamics of the interaction between in-cylinder flows and provides a reliable way to improve temporal resolution in PIV flow data to better reveal transient in-cylinder flow features.

Bi-RNN model↗
NASA NTRS1977

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 1: Development of a high capacity memory element

Several versions of the 100K bit chip, which is configured as a single serial loop, were designed, fabricated and evaluated. Design and process modifications were introduced into each succeeding version to increase device performance and yield. At an intrinsic field rate of 150 KHz the final design operates from -10 C to +60 C with typical bias margins of 12 and 8 percent, respectively, for continuous operation. Asynchronous operation with first bit detection on start-up produces essentially the same margins over the temperature range. Cost projections made from fabrication yield runs on the 100K bit devices indicate that the memory element cost will be less than 10 millicents/bit in volume production.

Besser, P. J.↗