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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Chemistry of MOS-LSI radiation hardening

The objective of this task was to obtain chemical information on MOS test samples. Toward this end, high resolution X-ray photoemission spectroscopy (XPS) has been the primary techniques used to characterize the chemistry and structure of the SiO2/Si interface for a variety of MOS structures with differing degrees of susceptibility to damage by ionizing radiation. The major accomplishments of this program are: (1) the identification of a structurally distinct region of SiO2 in the near-interfacial region of thermal SiO2 on Si; (2) the identification in the near-interfacial region of SiO2 structural differences between radiation hard and soft gate oxides; (3) the direct observation of radiation-induced damage sites in thermal SiO2 with XPS using in situ electron stress; (4) the correlation of suboxide state distributions at the SiO2/Si interface with processing parameters and radiation susceptibility; (5) the development of a chemical mechanism for radiation-induced interface state generation in SiO2/Si structures; and (6) the development benign chemical profiling techniques which permit the investigation of oxide/semiconductor structures using surface sensitive electron spectroscopic techniques.

Grunthaner, P.↗
NASA NTRS2006

VOIP over Space Networks

This viewgraph presentation reviews Voice over Internet Protocol (VOIP) over a space networking environment. The topics include: 1) Drivers for VOIP in Space; 2) Challenges in the Space Networking Environment: Long Latencies, Path errors, Simplex paths, Asymmetric paths, QoS requirements, Team-based operations, and Overhead concerns; 3) Possible VOIPOSN approaches; 4) Study of BER, code type and voice frame length on PESQ-MOS; 5) Codec Latency Trade Space; and 6) Testbed.

Internet Protocol (IP)↗
NASA NTRS1985

Studies on Physical Properties of Snow Based on Multi Channel Microwave Radiometer

The analysis of the data observed over a snow field with a breadboard model of MSR (microwave scanning radiometer) to be installed in MOS-1 (Marine Observation Satellite-1) indicates that: (1) the influence of incident angle on brightness temperature is larger in horizontal polarization component than in vertical polarization component. The effect of incident angle depends upon the property of snow with larger value for dry snow; (2) the difference of snow surface configuration consisting of artifically made parallel ditches of 5 cm depth and 5 cm width with spacing of 10 and 30 cm respectively which are oriented normal to electrical axis do not affect brightness temperature significantly; and (3) there is high negative correlation between brightness temperature and snow depth up to the depth of 70 cm which suggests that the snow depth can be measured with a two channel microwave radiometer up to this depth.

Tsuchiya, K.↗
NASA NTRS1976

Experimental investigation of a double-diffused MOS structure

Self-aligned polysilicon gate technology was applied to double-diffused MOS (DMOS) construction in a manner that retains processing simplicity and effectively eliminates parasitic overlap capacitance because of the self-aligning feature. Depletion mode load devices with the same dimensions as the DMOS transistors were integrated. The ratioless feature results in smaller dimension load devices, allowing for higher density integration with no increase in the processing complexity of standard MOS technology. A number of inverters connected as ring oscillators were used as a vehicle to test the performance and to verify the anticipated benefits. The propagation time-power dissipation product and process related parameters were measured and evaluated. This report includes (1) details of the process; (2) test data and design details for the DMOS transistor, the load device, the inverter, the ring oscillator, and a shift register with a novel tapered geometry for the output stages; and (3) an analytical treatment of the effect of the distributed silicon gate resistance and capacitance on the speed of DMOS transistors.

Lin, H. C.↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS1976

Prediction and measurement of radiation damage to CMOS devices on board spacecraft

The CMOS Radiation Effects Measurement (CREM) experiment is presently being flown on the Explorer-55. The purpose of the experiment is to evaluate device performance in the actual space radiation environment and to correlate the respective measurements to on-the-ground laboratory irradiation results. The experiment contains an assembly of C-MOS and P-MOS devices shielded in front by flat slabs of aluminum and by a practically infinite shield in the back. Predictions of radiation damage to C-MOS devices are based on standard environment models and computational techniques. A comparison of the shifts in CMOS threshold potentials, that is, those measured in space to those obtained from the on-the-ground simulation experiment with Co-60, indicates that the measured space damage is smaller than predicted by about a factor of 2-3 for thin shields, but agrees well with predictions for thicker shields.

Cliff, R. A.↗
NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗
NASA NTRS2009

X-Ray Shadowing Experiments Toward Infrared Dark Clouds

We searched for X-ray shadowing toward two infrared dark clouds (IRDCs) using the MOS detectors on XMM-Newton to learn about the Galactic distribution of X-ray emitting plasma. IRDCs make ideal X-ray shadowing targets of 3/4 keY photons due to their high column densities, relatively large angular sizes, and known kinematic distances. Here we focus on two clouds near 30 deg Galactic longitude at distances of 2 and 5 kpc from the Sun. We derive the foreground and background column densities of molecular and atomic gas in the direction of the clouds. We find that the 3/4 ke V emission must be distributed throughout the Galactic disk. It is therefore linked to the structure of the cooler material of the ISM, and to the birth of stars.

Anderson, L. E.↗
NASA NTRS2006

Four-Quadrant Analog Multipliers Using G4-FETs

Theoretical analysis and some experiments have shown that the silicon-on-insulator (SOI) 4-gate transistors known as G4-FETs can be used as building blocks of four-quadrant analog voltage multiplier circuits. Whereas a typical prior analog voltage multiplier contains between six and 10 transistors, it is possible to construct a superior voltage multiplier using only four G4-FETs. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET). It can be regarded as a single transistor having four gates, which are parts of a structure that affords high functionality by enabling the utilization of independently biased multiple inputs. The structure of a G4-FET of the type of interest here (see Figure 1) is that of a partially-depleted SOI MOSFET with two independent body contacts, one on each side of the channel. The drain current comprises of majority charge carriers flowing from one body contact to the other that is, what would otherwise be the side body contacts of the SOI MOSFET are used here as the end contacts [the drain (D) and the source (S)] of the G4-FET. What would otherwise be the source and drain of the SOI MOSFET serve, in the G4-FET, as two junction-based extra gates (JG1 and JG2), which are used to squeeze the channel via reverse-biased junctions as in a JFET. The G4-FET also includes a polysilicon top gate (G1), which plays the same role as does the gate in an accumulation-mode MOSFET. The substrate emulates a fourth MOS gate (G2). By making proper choices of G4-FET device parameters in conjunction with bias voltages and currents, one can design a circuit in which two input gate voltages (Vin1,Vin2) control the conduction characteristics of G4-FETs such that the output voltage (Vout) closely approximates a value proportional to the product of the input voltages. Figure 2 depicts two such analog multiplier circuits. In each circuit, there is the following: The input and output voltages are differential, The multiplier core consists of four G4- FETs (M1 through M4) biased by a constant current sink (Ibias), and The G4-FETs in two pairs are loaded by two identical resistors (RL), which convert a differential output current to a differential output voltage. The difference between the two circuits stems from their input and bias configurations. In each case, provided that the input voltages remain within their design ranges as determined by considerations of bias, saturation, and cutoff, then the output voltage is nominally given by Vout = kVin1Vin2, where k is a constant gain factor that depends on the design parameters and is different for the two circuits. In experimental versions of these circuits constructed using discrete G4- FETs and resistors, multiplication of voltages in all four quadrants (that is, in all four combinations of input polarities) was demonstrated, and deviations of the output voltages from linear dependence on the input voltages were found to amount to no more than a few percent. It is anticipated that in fully integrated versions of these circuits, the deviations from linearity will be made considerably smaller through better matching of devices.

Mojarradi, Mohammad↗
NASA NTRS1982

The damage equivalence of electrons, protons, and gamma rays in MOS devices

The results of laboratory tests to determine the radiation damage effects induced on MOS devices from Co-60, electron, and proton radiation are reported. The tests are performed to establish the relationship between the Co-60 gamma rays and the level of damage to the MOS devices in regards to different damages which can be expected with the electron and particle bombardments experienced in space applications. CMOS devices were exposed to the Co-60 gamma rays, 1 MeV electrons, and 1 MeV protons while operating at 3, 10, and 15 V. The test data indicated that the Co-60 source was reliable for an initial evaluation of the electron damages up to 2 MeV charge. A correction factor was devised for transferring the Co-60 measurements to proton damages, independent of bias and transistor types, for any orbit or environment.

Brucker, G. J.↗
NASA NTRS1991

VLSI architectures for geometrical mapping problems in high-definition image processing

This paper explores a VLSI architecture for geometrical mapping address computation. The geometric transformation is discussed in the context of plane projective geometry, which invokes a set of basic transformations to be implemented for the general image processing. The homogeneous and 2-dimensional cartesian coordinates are employed to represent the transformations, each of which is implemented via an augmented CORDIC as a processing element. A specific scheme for a processor, which utilizes full-pipelining at the macro-level and parallel constant-factor-redundant arithmetic and full-pipelining at the micro-level, is assessed to produce a single VLSI chip for HDTV applications using state-of-art MOS technology.

Kim, K.↗
NASA NTRS2010

The History of the Animal Care Program at NASA Johnson Space Center

This slide presentation reviews the work of the Animal Care Program (ACP). Animals have been used early in space exploration to ascertain if it were possible to launch a manned spacecraft. The program is currently involved in many studies that assist in enhancing the scientific knowledge of the effect of space travel. The responsibilities of the ACP are: (1) Organize and supervise animal care operations & activities (research, testing & demonstration). (2) Maintain full accreditation by the International Association for the Assessment and Accreditation of Laboratory Animal Care (AAALAC) (3) Ensure protocol compliance with IACUC recommendations (4) Training astronauts for in-flight animal experiments (5) Maintain accurate & timely records for all animal research testing approved by JSC IACUC (6) Organize IACUC meetings and assist IACUC members (7) Coordinate IACUC review of the Institutional Program for Humane Care and Use of Animals (every 6 mos)

Khan-Mayberry, Noreen↗
NASA NTRS1993

Total Ionizing Dose Effects in 12-Bit Successive-Approximation Analog-To-Digital Converters

Analog-to-digital (A/D) converters are critical components in many space and military systems, and there have been numerous advances in A/D converter technology that have increased the resolution and conversion time. The increased performance is due to two factors: (1) advances in circuit design and complexity, which have increased the number of components and the integration density; and (2) new process technologies, such as BiCMOS, which provide better performance, cost, and smaller size in mixed-signal circuits. High-speed A/D converters, with conversion rates above 1 MHz, present a challenge to circuit designers and test engineers. Their complex architectures and high-performance specifications result in numerous possible failure modes when they are subjected to ionizing radiation. The dominant failure mode may depend on the specific application because the fundamental effects on MOS and bipolar transistors are strongly affected by bias conditions.

Lee, C. I.↗
NASA NTRS1998

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

We describe an electronic transport model and an implementation approach that respond to the challenges of device modeling for gigascale integration. We use the density-gradient (DG) transport model, which adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We present the current implementation of the DG model in PROPHET, a partial differential equation solver developed by Lucent Technologies. This implementation approach permits rapid development and enhancement of models, as well as run-time modifications and model switching. We show that even in typical bulk transport devices such as P-N diodes and BJTs, DG quantum effects can significantly modify the I-V characteristics. Quantum effects are shown to be even more significant in small, surface transport devices, such as sub-0.1 micron MOSFETs. In thin-oxide MOS capacitors, we find that quantum effects may reduce gate capacitance by 25% or more. The inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements. Significant quantum corrections also occur in the I-V characteristics of short-channel MOSFETs due to the gate capacitance correction.

Biegel, Bryan A.↗
NASA NTRS1999

Multi-Dimensional Quantum Tunneling and Transport Using the Density-Gradient Model

We show that quantum effects are likely to significantly degrade the performance of MOSFETs (metal oxide semiconductor field effect transistor) as these devices are scaled below 100 nm channel length and 2 nm oxide thickness over the next decade. A general and computationally efficient electronic device model including quantum effects would allow us to monitor and mitigate these effects. Full quantum models are too expensive in multi-dimensions. Using a general but efficient PDE solver called PROPHET, we implemented the density-gradient (DG) quantum correction to the industry-dominant classical drift-diffusion (DD) model. The DG model efficiently includes quantum carrier profile smoothing and tunneling in multi-dimensions and for any electronic device structure. We show that the DG model reduces DD model error from as much as 50% down to a few percent in comparison to thin oxide MOS capacitance measurements. We also show the first DG simulations of gate oxide tunneling and transverse current flow in ultra-scaled MOSFETs. The advantages of rapid model implementation using the PDE solver approach will be demonstrated, as well as the applicability of the DG model to any electronic device structure.

Biegel, Bryan A.↗
NASA NTRS1995

Long term microparticle impact fluxes on LDEF determined from optical survey of Interplanetary Dust Experiment (IDE) sensors

Many of the IDE metal-oxide-silicon (MOS) capacitor-discharge impact sensors remained active during the entire Long Duration Exposure Facility (LDEF) mission. An optical survey of impact sites on the active surfaces of these sensors has been extended to include all sensors from the low-flux sides of LDEF (i.e. the west or trailing side, the earth end, and the space end) and 5-7 active sensors from each LDEF's high-flux sides (i.e. the east or leading side, the south side, and the north side). This survey was facilitated by the presence of a relatively large (greater than 50 micron diameter) optical signature associated with each impact site on the active sensor surfaces. Of the approximately 4700 impacts in the optical survey data set, 84% were from particles in the 0.5 to 3 micron size range. An estimate of the total number of hypervelocity impacts on LDEF from particles greater than 0.5 micron diameter yields a value of approximately 7 x 10(exp 6). Impact feature dimensions for several dozen large craters on MOS sensors and germanium witness plates are also presented. Impact fluxes calculated from the IDE survey data closely matched surveys of similar size impacts (greater than or equal to 3 micron diameter craters in Al, or marginal penetrations of a 2.4 micron thick Al foil) by other LDEF investigators. Since the first year IDE data were electronically recorded, the flux data could be divided into three long term time periods: the first year, the entire 5.8 year mission, and the intervening 4.8 years (by difference). The IDE data show that there was an order of magnitude decrease in the long term microparticle impact flux on the trailing side of LDEF, from 1.01 to 0.098 x 10(exp -4) m(exp 2)/s, from the first year in orbit compared to years 2-6. The long term flux on the leading edge showed an increase from 8.6 to 11.2 x 10(exp -4) m(exp -2)/s over this same time period. (Short term flux increases up to 10,000 times the background rate were recorded on the leading side during LDEF's first year in orbit.) The overall east/west ratio was 44, but during LDEF's first year in orbit the ratio was 8.5, and during years 2-6 the ratio was 114. Long term microparticle impact fluxes on the space end decreased from 1.12 to 0.55 x 10(exp -4) m(exp -2)/s from the first year in orbit compared to years 2-6. The earth end showed the opposite trend with an increase from 0.16 to 0.38 x 10(exp -4) m(exp -2)/s. Fluxes on rows 6 and 12 decreased from 6.1 to 3.4 and 6.7 to 3.7 x 10(exp -4) m(exp -2)/s, respectively, over the same time periods. This resulted in space/earth microparticle impact flux ratios of 7.1 during the first year and 1.5 during years 2-6, while the south/north, space/north and space/south ratios remained constant at 1.1, 0.16 and 0.17, respectively, during the entire mission. This information indicates the possible identification of long term changes in discrete microparticle orbital debris component contributions to the total impact flux experienced by LDEF. A dramatic decrease in the debris population capable of striking the trailing side was detected that could possibly be attributed to the hiatus of western launch activity experienced from 1986-1989. A significant increase in the debris population that preferentially struck the leading side was also observed and could possibly be attributed to a single breakup event that occurred in September of 1986. A substantial increase in the microparticle debris population that struck the earth end of LDEF, but not the space end, was also detected and could possibly be the result of a single breakup event at low altitude. These results point to the importance of including discrete orbital debris component contribution changes in flux models in order to achieve accurate predictions of the microparticle environment that a particular spacecraft will experience in earth orbit. The only reliable, verified empirical measurements of these changes are reported in this paper. Further time-resolved in-situ measurements of these debris populations are needed to accurately assess model predictions and mitigation practices.

Simon, C. G.↗
NASA NTRS2016

A Structured, Model-Based Systems Engineering Methodology for Operations System Design

Two widely accepted techniques for lowering the cost and risk of developing systems are (1) the use of a defined systems engineering (SE) process or methodology and (2) the reuse of existing (previously built) system components. The first technique is represented, for example, in materials published by NASA (e.g., NASA Systems Engineering Handbook) or by professional societies such as INCOSE (International Council on Systems Engineering). Well-formed SE techniques provide value by establishing the proper scope of the system (e.g., requirements), and by identifying and resolving problems relatively early in project lifecycles, when fixes are less expensive. The second technique (reuse) is applied most commonly to hardware and software; it seeks to avoid replicating design and implementation costs while also reducing risk by placing proven capabilities into operational use. In this paper, we outline a methodology combining these two techniques and extending reuse beyond hardware and software to foundational aspects of a Mission Operation System’s (MOS) design. We describe the system design artifacts that result (e.g., requirements, design documentation), as well as the reusable patterns and elements of the design, and their interrelationships. This approach is enabled by model-based systems engineering (MBSE) techniques and tools and is currently available in SysML form as a plug-in to MagicDraw. Additionally, usage of a rigorous MBSE approach allows for training materials and tutorials to be packaged within the overall model itself. The results of such an approach include decreased cost and risk during the design phase, improved ability of the MOS development team to investigate trade spaces and identify impacts to important flight-ground trade studies. Such results extend into decreased costs and risk in later phases due to improved design, decreased need for late fixes or development of "glue-ware" or scripts to fill unanticipated gaps in functionality, and improved ability to identify and plan testing and other validation activities. Finally, lower operational costs can be expected, both due to improved quality of the MOS, increased ease of maintaining updated knowledge of system configuration, and the fact that training and procedural materials are also updated at the same time as accepted system changes.

Bindschadler, Duane L.↗
NASA NTRS2003

The X-ray Spectrum of the North Polar Spur

An analysis is presented of the soft X-ray background spectrum measured by the EPIC MOS cameras on XMM-Newton in three observations targeted on the North Polar Spur (NPS). Three distinct Galactic plasma components are identified, a cool Local Hot Bubble (LHB) component, T(sub lo) approx. 0.1 keV, a cool Galactic Halo component at a similar temperature and a hotter component, T(sub hi) approx. 0.26 keV, associated with the NPS itself. Using the new data in combination with the Rosat All-Sky Survey count rates measured in the 0.1-0.4 keV band, we estimate the emission measure of the LHB material to be 0.0040-0.0052 cm(exp -6) pc, which implies an electron density of 0.008-0.011 cm(exp -3) and pressure of approx. 22000 cm(exp -3) K. The halo and NPS components lie behind at least 50% of the line-of-sight cold gas for which the total Galactic column density is in the range (2 - 8) x 10(exp 20) cm(exp -2). Modelling the X-ray emitting superbubble as a sphere at distance 210 pc, radius 140 pc and center l(sub II) = 352 deg, b(sub II) = 15 deg, the implied electron density in the NPS is approx. 0.03 cm(exp -3) with pressure approx. 150000 cm(exp -3) K. The observed spectral line complexes from OVII, OVIII, FeXVII, NeIX, NeX and MgXI provide constraints on the composition of the plasma. The hot component in the NPS is depleted in oxygen, neon and, to some extent, magnesium and iron. Assuming the effective line of sight across the halo emission is 1 kpc, the electron density in the halo is 0.007-0.011 cm(exp -3) and the pressure is approx. 16500 cm(exp -3) K, conditions very similar to those in the LHB.

Willingale, Richard↗