Predictive Reliability for AC Photovoltaic Modules Based on Electro-Thermal Phenomena.
Abstract not provided.
Armijo, Kenneth Miguel↗
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Design of a Marx-Topology Shaped-Pulse Modulator for FNAL
Fermi National Accelerator Laboratory is undergoing an effort to upgrade the 201 MHz Proton Source system. One subset of this upgrade is addressing the triode modulator reliability and performance issues. SLAC National Accelerator Laboratory proposes a Marxtopology modulator to replace the existing system. This paper presents the system design of this modulator, the SLAC F1 Marx.
Kemp, M. A.↗
2017 NREL Photovoltaic Reliability Workshop
NREL's Photovoltaic (PV) Reliability Workshop (PVRW) brings together PV reliability experts to share information, leading to the improvement of PV module reliability. Such improvement reduces the cost of solar electricity and promotes investor confidence in the technology -- both critical goals for moving PV technologies deeper into the electricity marketplace.
14 SOLAR ENERGY↗
Fast External Quantum Efficiency Measurements of Photovoltaic Modules
The external quantum efficiency (EQE) or associated spectral response is widely used to evaluate the performance of photovoltaics, light emitting diodes, photodetectors, photodiodes, semiconductor lasers, laser-induced refrigeration of solids etc. For photovoltaic (PV) devices, The EQE is used to determine the spectral mismatch correction that is used to convert a performance measurement from a non-ideal simulator spectrum to a standard spectrum in PV device calibrations. Moreover, EQE can provide important insight into the physics of a PV device. For instance, the EQE shape can be used to infer mechanisms limiting the performance of the device. However, EQE measurements of full-size PV modules remain a challenge in the PV community due to rare availability of reliable module QE measurement tools worldwide and the size and complexity of module architecture that comprises several cells connected in strings (series or/and parallel). Here, we use a customized nondestructive tool made of high-power light emitting diodes to perform high-throughput EQE measurements on PV modules. Circuit simulations show that the measurement system can safely be used to measure both crystalline silicon and thin film-based PV modules with series connected cells without the risk of damage through reverse bias. In addition, EQE mapping combined with electroluminescence show a strong correlation and provide a way to determine both spatial non-uniformity of the spectral response and defects/degradation effects across the module.
PV module↗
Degradation of Edge-Defined Film-Fed Silicon Glass–Glass Modules on Florida Rooftop After 22 Years
Thin silicon (< 100 μm) adoption can provide significantly lower cost. Kerfless technologies provide thin wafers while preventing material from being wasted. Understanding how this family of processing influences module reliability is important. A set of four edge-defined film-fed growth (EFG) silicon modules from a ten-module system in Florida is measured after 22 years of exposure. Power loss rates of 0.58–0.78% year -1 are measured for three modules, while a rate of 1.32% is measured for a module with severe delamination and corrosion. Short-circuit current degrades between 10.7% and 13.1% for all modules. Further, the losses are primarily optical and recombination based; however, series and shunt resistance effects play a non-negligible role. Pre-existing recombination losses exist but are exacerbated via degradation. Optical losses in short-circuit current are due in part to encapsulant yellowing. Electroluminescence (EL) images display the effects of processing on bulk quality by clearly showing lines of alternating brightness along the wafer length. To the authors’ knowledge, this is the first article displaying suns–V OC data, effective lifetime versus excess carrier density data, and module EL images for EFG silicon-based modules.
36 MATERIALS SCIENCE↗
R&D to Ensure a Scientific Basis for Qualification Tests and Standards (Final Report)
Project return on investment in a photovoltaic (PV) system depends increasingly on maintaining high energy yields, and the system lifetime is a major factor in levelized cost of electricity (LCOE). Thus, the rate of PV deployment and the success of these assets depends upon reliable long-term power generation. The overarching objective of this program is to improve photovoltaic (PV) module reliability via development of tests and standards. Where reliability problems or risk are discovered, we can design tests to ensure that these liabilities don't affect future generations of products. Customers can use these tests to understand which products are susceptible to certain degradation mechanisms, and manufacturers can use the tests to design unwanted characteristics out of their products. The work under this program identifies PV reliability needs, performs characterization that provides scientific understanding of targeted degradation mechanisms, and translates those data into practical and predictive test protocols and standards. Major accomplishments include: A model for polarization-type potential induced degradation (PID-p) was developed and validated against experimental data. NREL is currently leading a new edition of IEC 62804-1 for PID detection. PID-p can cause large losses in current and voltage for some module designs on cloudy days. Finite element modeling (FEM) and experiment was used to determine when cells crack in a module. It was shown that cells in landscape orientation are much more likely to crack than those on portrait orientation. Shortly thereafter, the first products with portrait-oriented cells were introduced. Studies of how to test for light and elevated temperature degradation (LeTID) culminated with the publication of IEC TS 63342. Software to predict the progression of LeTID was developed, validated, and made publicly available. Field validated tests and international standards for durability of PV module coatings abrasion, backsheets, and encapsulants were developed. Examples are IEC 62788-1-1, IEC 62788-2 ED2, IEC TS 62788-7-2, IEC 62788-7-3 ED1, IEC 63209-2. NREL led the development a high-temperature testing technical specification, and published guidelines that enable installers to determine whether higher-temperature testing is needed, simply based on location and mounting configuration. In a number of our case studies, variations in the bills of materials or workmanship have been associated with variations in reliability. These observations emphasize the importance of quality assurance to reliability. A framework for criticality (i.e. Pareto) analysis was developed and published. The framework helps us and other researchers determine what problems should be addressed for reliability research to have the biggest industry impact. NREL continues to participate actively in international standards development and stakeholder engagement activities, including organizing an annual PV Reliability Workshop. These activities are important for ensuring we address issues that are relevant and timely, and that we convey our results to those who may benefit.
14 SOLAR ENERGY↗
Proceedings of the 2019 PV Reliability Workshop, 26-28 February 2019, Lakewood, Colorado
NREL hosts an annual Photovoltaic Reliability Workshop (PVRW) so solar technology experts can share information leading to the improvement of PV module reliability. Such improvement reduces the cost of solar electricity and promotes investor confidence in the technology - both critical goals for moving PV technologies deeper into the electricity marketplace. This document collects the presentations and posters from the 2019 PV Reliability Workshop, which was hosted by NREL from Tuesday, February 26, to Thursday, February 28, 2019.
14 SOLAR ENERGY↗
Proceedings of the 2018 PV Reliability Workshop, 27 February - 1 March 2018, Lakewood, Colorado
NREL hosts an annual Photovoltaic Reliability Workshop (PVRW) so solar technology experts can share information leading to the improvement of PV module reliability. Such improvement reduces the cost of solar electricity and promotes investor confidence in the technology - both critical goals for moving PV technologies deeper into the electricity marketplace. This document collects the presentations and posters from the 2018 PV Reliability Workshop, which was hosted by NREL from Tuesday, February 27, to Thursday, March 1, 2018.
14 SOLAR ENERGY↗
Developments for Novel Module Architecture for Lower CapEx and Improved Recyclability for c-Si PV Modules
Photovoltaic (PV) energy production is currently increasing at a significant rate. A novel module architecture has been demonstrated that has potential for reducing manufacturing cost while improving module reliability and recycling for c-Si PV which utilizes an edge-seal. Referred to as Edge Sealed Module (ESM), this architecture eliminates the vacuum lamination process and cross-linked encapsulants on the interior of the module. Functioning prototypes of c-Si have been fabricated for stress testing in collaboration with National Renewable Energy Laboratories (NREL). These modules are being tested and compared to traditionally manufactured modules. Based on preliminary results, this module architecture is a potentially viable solution for improving the manufacturing cost and recyclability of PV modules while enhancing module performance.
costs↗
Observations of PV Systems Post-Hurricane
NREL's observations of post-hurricane photovoltaic (PV) systems were shared with PV reliability researchers during the Photovoltaic Reliability Workshop held in Lakewood, Colorado the week of February 26, 2018. NREL hosts an annual Photovoltaic Reliability Workshop (PVRW) so that solar technology experts can share information leading to the improvement of PV module reliability. Such improvement reduces the cost of solar electricity and promotes investor confidence in the technology - both critical goals for moving PV technologies deeper into the electricity marketplace. This presentation is intended to share real world examples of PV survivability during and after Hurricanes Irma and Maria in 2017.
29 ENERGY PLANNING, POLICY, AND ECONOMY↗
Room-temperature ferroelectricity of SrTiO{sub 3} films modulated by cation concentration
The room-temperature ferroelectricity of SrTiO{sub 3} is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO{sub 3} films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO{sub 3} films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.
36 MATERIALS SCIENCE↗
PV Module BOM and Test Data
This dataset contains compiled results from annual PV Module Reliability Scorecards published by PV Evolution Labs – also known as PVEL. These scorecards show summary results of PV module testing performed by PVEL and name specific models of PV modules as "Top Performers" in various tests. Full details on testing, Top Performer status and other criteria for inclusion in Scorecards are documented in reports and online documentation available from https://www.modulescorecard.pvel.com. This dataset is not affiliated with PVEL and is intended only to simplify sorting and filtering Scorecard data and finding specific PV module models and Top Performer results. Note that data included in Scorecards has evolved over time, so not all data is available for all years, and testing protocols and Scorecard criteria have been changed over time.
14 SOLAR ENERGY↗
Comprehensive study of performance degradation of field‐mounted photovoltaic modules in India
Abstract The All India Survey of Photovoltaic Module Reliability 2014 is an enhanced version of the survey conducted in the previous year, with detailed characterization of PV modules including current‐voltage, infrared and electroluminescence imaging, visual inspection, insulation resistance test and interconnect breakage test. More than a thousand modules were inspected in the field and the main results of the survey are presented in this paper. The average P max degradation rate for the so‐called ‘good’ modules (Group X) is 1.33%/year which is higher than that commonly projected by manufacturers, and widely employed in financial calculations. Modules falling in the ‘not‐so‐good’ category (Group Y) show even higher degradation rates, and it is at least partly due to higher number of micro‐cracks in the modules, and increased degradation of the packaging materials like encapsulant, backsheet, etc. Modules in ‘Hot’ climates degrade faster than modules in the ‘Non‐Hot’ climates. Degradation in fill factor is the primary cause for performance degradation in the young modules (ages <5 years), whereas short‐circuit current degradation is the main contributor to power degradation in the older modules. Small installations (<100 kW p capacity) show higher degradation than large systems, which may be partly due to lack of proper due diligence by the owner at the time of procurement and installation.
Dubey, Rajiv↗
Impact of undoped substrates on high performance silicon solar cells
Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.
14 SOLAR ENERGY↗
First principles modeling of polymer encapsulant degradation in Si photovoltaic modules
An outstanding issue in the longevity of photovoltaic (PV) modules is the accelerated degradation caused by the presence of moisture. Moisture leads to interfacial instability, de-adhesion, encapsulant decomposition, and contact corrosion. However, experimental characterization of moisture in PV modules is not trivial and its impacts can take years or decades to establish in the field, presenting a major obstacle to designing high-reliability modules. First principles calculations provide an alternative way to study the ingress of water and its detrimental effect on the structure and decomposition of the polymer encapsulant and interfaces between the encapsulant and the semiconductor, the metal contacts, or the dielectric layer. Here, we use density functional theory (DFT) computations to model single chain, crystalline and cross-linked structures, infrared (IR) signatures, and degradation mechanisms of ethylene vinyl acetate (EVA), the most common polymer encapsulant used in Si PV modules. IR-active modes computed for low energy EVA structures and possible decomposition products match well with reported experiments. The EVA decomposition energy barriers computed using the Nudged Elastic Band (NEB) method show a preference for acetic acid formation as compared to acetaldehyde, are lowered in the presence of a water solvent or hydroxyl ion catalyst, and match well with reported experimental activation energies. This systematic study leads to a clear picture of the hydrolysis-driven decomposition of EVA in terms of energetically favorable mechanisms, possible intermediate structures, and IR signatures of reactants and products.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Reducing module soiling with scalable and robust photocatalytic coatings
The air-glass interface at the front of a photovoltaic (PV) module reflects approximately 4% of incident light, decreasing the potential power output of the module by the same amount. Today’s modules reduce this loss by adding a low-refractive-index (1.25-1.30) SiO2 coating to the sunward side of the module glass; this antireflection coating recovers approximately 3% of the 4% light that would otherwise be lost. While such antireflection coatings work very well on clean, new modules, they do not inhibit soiling—the accumulation of soilants such as dust, pollen, soot, or other foreign material—on the module glass, and soilants reflect and scatter incident light. An improved coating would serve provide not only an antireflection effect, but also an anti-soiling effect. The goal of this project was to develop such a coating and provide a path for it to be manufactured in the U.S. The project successfully designed and fabricated coatings that provided >3% transmittance gain compared to bare glass (matching the performance of commercial antireflection coatings) and displayed anti-soiling behavior in standard laboratory soiling effects. This was achieved by using a Swift Coat proprietary coating deposition technique, aerosol impact-driven assembly (AIDA), to control the porosity and thus refractive index of coatings of photocatalytic materials—such as TiO2—that would otherwise increase (instead of decrease) reflection. These combined antireflection/anti-soiling coatings passed PV industry standard module reliability tests as well as coating-specific abrasion tests, showing that they have the durability needed for decades in the field. Swift Coat scaled the AIDA hardware and deposition process to make mini-modules that were monitored for nearly two years during field tests administered by a third party, as well as demonstrated scaling to the widths of full-sized modules. The fielded mini-modules outperformed reference modules (with commercial antireflection coatings) in two locations, providing a 1% absolute average performance boost and larger increases during periods of heavier soiling. Swift Coat’s cost analysis indicated a coating manufacturing cost below the sales price of today’s antireflection coatings. More than five module manufacturers sampled and assessed the coatings, and three provided letters of support. The coating developed in this project increases the energy output of PV modules, thereby decreasing the cost per kilowatt-hour of solar energy generated. Cheaper solar electricity benefits the public by accelerating the transition to a stable, affordable, carbon-free energy economy. In addition, for select applications in which PV modules are highly visible—such as on residential rooftops—the coating provides an aesthetic benefit because it stays cleaner than today’s modules. Finally, Swift Coat and its prospective customers are U.S. companies, and successful commercialization of this technology will provide U.S. jobs and a secure solar supply chain.
14 SOLAR ENERGY↗
Silicon nitride stress-optic microresonator modulator for optical control applications
Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.
Wang, Jiawei (ORCID:0000000257965220)↗
Performance Modelling and Yearlong Outdoor Degradation Analysis of a GaAs//Si Tandem Module
Silicon-based tandem photovoltaic cells and modules are forecasted to enter mass production around the year 2026. Previous research efforts on tandem photovoltaic technology have focused heavily on increasing cell efficiencies. However, for successful large-scale deployment of tandem modules, reliability and long-term durability will be equally important. Outdoor performance data beyond the one-year mark enable sophisticated degradation analysis and help build confidence in the reliability and durability of this new technology.
degradation rate↗