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Miniature capacitors containing multiple alternating thin-film dielectric and metal layers proposed, especially for use in integrated and hybrid electronic circuits. Because capacitance inversely proportional to thickness of dielectric layers, use of thin, high-quality dielectric layers affords capacitance and energy-storage densities much greater than now available. These devices much smaller and more reliable than state-of-art capacitors.
Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.
The computer simulation of thin-film nucleation and growth, which was previously performed for the case of single monolayer, has been extended to the case of multilayer growth. The simulation results show that the kinetics of multilayer growth is nearly identical to that of monolayer growth. The cluster density resulting from the multilayer mode is similar to that resulting from the monolayer mode at low coverage. At high coverage, multilayer growth results in substantially higher cluster density than that resulting from monolayer growth.
This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.
Bonding across the interface for two solids in contact and the subsequent transfer of material from one surface to another is a direct result of the interfacial bonds being stronger than the cohesive bonds in either of the two solids. Surface tools such as LEED, Auger emission spectroscopy, field ion microscopy, and the atom probe are used to examine adhesive contacts and to determine the direction, nature, quantity of material transfer and properties of the solids which effect transfer and wear. The electronic nature, cohesive binding energies, surface structure, lattice disregistry and distribution of species in surface layers are all found to effect adhesion and transfer or transport for clean surfaces in solid state contact. The influence of adsorbed and reacted surface films from fractions of a monolayer to multilayer reactive films are considered. It is shown that even fractions of a monolayer of surface active species such as oxygen and sulfur can markedly inhibit adhesion and transport.
A multi-layer film-stack and method for forming the multilayer film-stack is given where a series of alternating layers of conducting and dielectric materials are deposited such that the conducting layers can be selectively addressed. The use of the method to form integratable high capacitance density capacitors and complete the formation of an integrated power system-on-a-chip device including transistors, conductors, inductors, and capacitors is also given.
A range of thin film sensor technology has been demonstrated enabling measurement of multiple parameters either individually or in sensor arrays including temperature, strain, heat flux, and flow. Multiple techniques exist for refractory thin film fabrication, fabrication and integration on complex surfaces and multilayered thin film insulation. Leveraging expertise in thin films and high temperature materials, investigations for the applications of thin film ceramic sensors has begun. The current challenges of instrumentation technology are to further develop systems packaging and component testing of specialized sensors, further develop instrumentation techniques on complex surfaces, improve sensor durability, and to address needs for extreme temperature applications. The technology research and development ongoing at NASA Glenn for applications to future launch vehicles, space vehicles, and ground systems is outlined.
Large positive and negative Hall coefficients achievable. Family of Hall-effect devices made from multilayer metal films instead of semiconductor materials. Metal films easier to fabricate; formed by deposition on variety of substrates, and leads readily attached to them. Fabricated with larger areas, potentially more reliable, and less affected by impurities. Also used to measure magnetic fields. Devices especially useful at low temperatures.
Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.
The proposal objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and EUV optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance the MSFC's position as a world leader in the design of innovative X-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures is absolutely necessary in order to advance the field of X-ray astronomy by pushing the limit for observing the universe to ever increasing photon energies (i. e. up to 200 keV or higher); well beyond Chandra (approx. 10 keV) and NuStar's (approx. 75 keV) capability. The addition of multilayer technology would significantly enhance the X-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication and design of innovative X-ray instrumentation which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments.To this aim, a magnetron vacum sputter deposition system for the deposition of novel multilayer thin film X-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and X-ray optics for a broad range of applications including medical imaging.
The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.
Up to now designers of X-ray optical instruments such as microscopes and telescopes have been compelled to use mirrors operating at small glancing angles. However, using vapor deposition techniques, it is now possible to build multilayered thin film structures in which the individual layers have thicknesses comparable with a wavelength of X-rays. These devices operate in a manner exactly analogous to multilayer dielectric coatings at visible wavelengths and can be used to increase the X-ray and extreme ultraviolet reflectivity of surfaces at large glancing angles. These X-ray mirrors have numerous potential applications in X-ray optics. Attention is given to X-ray images with a normal incidence mirror, and applications of multilayer optics. Single-mirror telescopes for solar/stellar astronomy are discussed, taking into account solar corona and transition region studies, and X-ray and extreme ultraviolet astronomy. Hybrid X-ray telescopes are also considered.
Objectives of this research are: (1) to measure the hysteresis loop, Kerr rotation angle, anisotropy energy profile, Hall voltage, and magnetoresistance of thin-film magneto-optic media using our loop-tracer; (2) measure the wavelength-dependence of the Kerr rotation angle, Theta(sub k), and ellipticity, epsilon(sub k), for thin-film media using our magneto-optic Kerr spectrometer (MOKS); (3) measure the dielectric tensor of thin-film and multilayer samples using our variable-angle magneto-optic ellipsometer (VAMOE); (4) measure the hysteresis loop, coercivity, remanent magnetization, saturation magnetization, and anisotropy energy constant for thin film magnetic media using vibrating sample magnetometry; (5) observe small magnetic domains and investigate their interaction with defects using magnetic force microscopy; (6) perform static read/write/erase experiments on thin-film magneto-optic media using our static test station; (7) integrate the existing models of magnetization, magneto-optic effects, coercivity, and anisotropy in an interactive and user-friendly environment, and analyze the characterization data obtained in the various experiments, using this modeling package; (8) measure focusing- and tracking-error signals on a static testbed, determine the 'feedthrough' for various focusing schemes, investigate the effects of polarization and birefringence, and compare the results with diffraction-based calculations; and (9) measure the birefringence of optical disk substrates using two variable angle ellipsometers.
Photocurrent responses of amorphous thin film silicon solar modules at room temperature were studied at different excitation intensities using various monochromatic light sources. Photocurrent imaging techniques have been effectively used to locate rapidly, and non-destructively, failure and defect sites in the multilayer thin film device. Differences observed in the photocurrent response characteristics for two different cells in the same amorphous thin film silicon solar module suggest the possibility of the formation of dissimilarly active devices, even though the module is processed in the same fabrication process. Possible mechanisms are discussed.
Over the last decade significant advances in technology have made possible development of instruments with substantially improved efficiency in the UV spectral region. In the area of optical coatings and materials, the importance of recent developments in chemical vapor deposited (CVD) silicon carbide (SiC) mirrors, SiC films, and multilayer coatings in the context of ultraviolet instrumentation design are discussed. For example, the development of chemically vapor deposited (CVD) silicon carbide (SiC) mirrors, with high ultraviolet (UV) reflectance and low scatter surfaces, provides the opportunity to extend higher spectral/spatial resolution capability into the 50-nm region. Optical coatings for normal incidence diffraction gratings are particularly important for the evolution of efficient extreme ultraviolet (EUV) spectrographs. SiC films are important for optimizing the spectrograph performance in the 90 nm spectral region. The performance evaluation of the flight optical components for the Solar Ultraviolet Measurements of Emitted Radiation (SUMER) instrument, a spectroscopic instrument to fly aboard the Solar and Heliospheric Observatory (SOHO) mission, designed to study dynamic processes, temperatures, and densities in the plasma of the upper atmosphere of the Sun in the wavelength range from 50 nm to 160 nm, is discussed. The optical components were evaluated for imaging and scatter in the UV. The performance evaluation of SOHO/CDS (Coronal Diagnostic Spectrometer) flight gratings tested for spectral resolution and scatter in the DGEF is reviewed and preliminary results on resolution and scatter testing of Space Telescope Imaging Spectrograph (STIS) technology development diffraction gratings are presented.
Multilayer, dielectric, thin film optical filter evaluation using cathode ray tube display device
Calculations on multilayer metal film polarizers for extreme ultraviolet radiation
Polarization characteristics of materials in XUV AND development of transmitting and reflecting polarizers, using multilayer metal films