Results for “ON/OFF ratio” — Page 3

DOE OSTI2020

Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape

In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.

42 ENGINEERING↗

DOE OSTI2021

Negative Capacitance MgZnO-Channel Thin-Film Transistor With Ferroelectric NiMgZnO in the Gate Stack

We demonstrate the negative capacitance thin-film transistor (NC-TFT) on glass substrate using the multifunctional MgZnO (MZO). The Mg 0.03 Zn 0.97 O semiconductor layer acts as the TFT channel for stable operation while the Ni-doped MZO, i.e. Ni 0.02 Mg 0.15 Zn 0.83 O (NMZO) serves as the ferroelectric layer in the NMZO/SiO 2 stacking gate dielectric structure. The subthreshold swing (SS) value is significantly reduced over the reference TFT without ferroelectric layer. The minimum SS value of the NC-TFT reaches 52 mV/dec while the on/off ratio of drain current ID reaches 10 9 .

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2024

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Laterally configured diamond photoconductive semiconductor switches (PCSS) with a buried, metallic p+ current channel are reported. Above bandgap ( λ ≤ 226 nm) optical triggering enables responsivity of over 130 mA/W. The use of low-impurity semi-insulating diamond as an active absorption layer enables fast rise and fall times (~2 ns) and on/off ratios greater than 10 11 . The PCSS excited with a laser energy of 20 nJ per pulse passes a high current density (44 A/cm) under a DC bias of 60 V, thanks to the buried metallic p+ current channel. The reported devices promise high current carrying capacity without the need for filamenting while leveraging the excellent optical, electronic, and thermal properties of diamond.

42 ENGINEERING↗

DOE OSTI2022

An Accurate, Error-Tolerant, and Energy-Efficient Neural Network Inference Engine Based on SONOS Analog Memory

In this work, we demonstrate SONOS (silicon-oxide-nitrideoxide- silicon) analog memory arrays that are optimized for neural network inference. The devices are fabricated in a 40nm process and operated in the subthreshold regime for in-memory matrix multiplication. Subthreshold operation enables low conductances to be implemented with low error, which matches the typical weight distribution of neural networks, which is heavily skewed toward near-zero values. This leads to high accuracy in the presence of programming errors and process variations. We simulate the end-to-end neural network inference accuracy, accounting for the measured programming error, read noise, and retention loss in a fabricated SONOS array. Evaluated on the ImageNet dataset using ResNet50, the accuracy using a SONOS system is within 2.16% of floating-point accuracy without any retraining. The unique error properties and high On/Off ratio of the SONOS device allow scaling to large arrays without bit slicing, and enable an inference architecture that achieves 20 TOPS/W on ResNet50, a >10× gain in energy efficiency over state-of-the-art digital and analog inference accelerators.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2023

Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

Materials Science↗

DOE OSTI2024

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

Physics↗

NASA NTRS1986

Dynamic design of gas sorption J-T refrigerator

A long-life Joule-Thomson refrigerator which is heat powered, involves no sealing, and has few mechanical parts is desirable for long-term sensor cooling in space. In the gas-sorption J-T refrigerator, cooling is achieved by gas sorption (either adsorption or absorption) processes. Currently, a modular, single-stage refrigerator is being designed and built to be operated at 20 K. The design was analyzed using a dynamic model, which is described here. The model includes the kinetics of the compressors and the heat switches, the heat transfer of the pre-coolers and the heat exchangers, the on/off ratio of the check valves, and the impedance of the J-T valve. The cooling power, the cycle time, and the operating conditions were obtained in terms of the power input, the heat sink temperature, and the J-T impedance.

Chan, C. K.↗

NASA NTRS1991

High-contrast, large optical bandwidth field-induced guide/antiguide modulator

An electric field induced-guide/antiguide optical intensity modulator which has a very wide optical bandwidth from 1 to 1.55/micron which is the largest ever reported before for an intensity modulator. A TE mode ON/OFF ratio larger than 21 dB at 1.15 micron, and a propagation loss about 1 dB at 1.3 micron has been measured. The electrooptic effects, along with carrier effects have been exploited to increase the refractive index under the guide and adjacent antiguide electrodes by applying reverse biases to them.

Huang, T. C.↗

NASA NTRS1992

Design of a spaceworthy adiabatic demagnetization refrigerator

A spaceworthy adiabatic demagnetization refrigerator (ADR) under development at NASA-Goddard is presented. A baseline model heat switch was tested extensively with an on/off ratio of about 10,000 and a parasitic heat leak of 10 micro-W. Data obtained from the breadboard models were used to design an ADR with improved structural integrity. The core of the ADR is the salt pill which consists of the paramagnetic salt crystal and the thermal bus. When a magnetic field is applied to the salt it forces the alignment of the magnetic moments, thereby decreasing the entropy of the salt. Preliminary tests results showed a net crystal mass of 680 g instead of the expected 740 g, which indicate that there are gaps in the salt pill. A partial fix was accomplished by sealing helium gas in the salt pill at a pressure of 2 bar, which improved the thermal contact during salt magnetization, at about 2 K.

Serlemitsos, A. T.↗

NASA NTRS2008

Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Miranda, F. A.↗

NASA NTRSDate not supplied

Use of Mechanical Heat Switch to Speed up TVAC Transitions on Flight Hardware Below 200K

Spaceflight hardware that operates at temperatures well below room temperature usually require being well isolated from their warmer environment in order to manage thermal parasitics adequately. This is especially true for spaceflight systems that rely on passive cooling such as a radiator. During ground testing, this design configuration can be problematic for TVAC cycling between operational temperature extremes, since the hardware temperatures may move extremely slowly and lengthen the duration of an already expensive and heavily staffed system-level TVAC campaign. One of the challenges of using an external means of speeding up temperature transitions is that a TVAC campaign usually also requires the simulation of flight-like environments to validate the design, and introducing a test feature to speed up transitions can disrupt the system such that flight-like environments are not achievable. Such an approach was used for the L’Ralph instrument level TVAC test. L’Ralph is a passively cooled instrument on the Lucy mission with planned flyby’s of the Trojan asteroids around 5.5 AU. The optics and visible detector are cooled below 190K, and the IR detector is cooled below 110K. During instrument TVAC qualification testing, a mechanical motor-controlled heat switch uses clamping pressure via a vise-grip mechanism to achieve faster temperature transitions by increasing the conduction to a cold sink. The heat switch system then disengages and employs zero-Q controls to achieve flight-like thermal environments for thermal balance plateaus. Results from stand-alone testing of the heat switch are discussed, including correlated on/off ratios and the expected conductance across its operational temperature range. Test data from an instrument level TVAC that successfully utilized the heat switch are also shown.

Daniel G Bae↗

NASA NTRS2020

High Performance Thermal Switch for Lunar and Planetary Surface Extreme Environments

This paper describes a high performance thermal switch for lunar/planetary extreme environments. This device has been given the name Reverse-Operation DTE Thermal Switch (or ROD-TSW). Two different prototypes were designed, built, and tested. Their basis of operation is the mating/de-mating of parallel flat metal surfaces driven by the differential thermal expansion (DTE) between mid-to-high CTE metal/polymer or metal-only end-pieces and a low CTE, low thermal conductivity (k) metal/polymer support rod. The requirements were to be fully ON above 300 K and fully OFF below 260 K. A series of four tests were carried out to verify/qualify the prototypes. In the first (non-vacuum) test, the thermal switches were cooled with freeze-spray and the non-conductive rod in the OFF thermal path allowed electrical resistance to confirm the 273 K as-designed ON/OFF actuation temperature. In the second (vacuum) test, a calibrated Q-meter was used, which indicated 5 W/K ON, 0.002 W/K OFF conductance (2500:1 ON/OFF ratio). To increase readiness to TRL6, a vibration test with pre/post thermal cycling followed by a 36-day test in a relevant environment were also carried out. This paper describes the development program and on-going related work at JPL.

Bugby, David C↗

NASA NTRS2020

High Performance Thermal Switch for Lunar and Planetary Surface Extreme Environments

This paper describes a high performance thermal switch for lunar/planetary extreme environments. This device has been given the name Reverse-Operation DTE Thermal Switch (or ROD-TSW). Two different prototypes were designed, built, and tested. Their basis of operation is the mating/de-mating of parallel flat metal surfaces driven by the differential thermal expansion (DTE) between mid-to-high CTE metal/polymer or metal-only end-pieces and a low CTE, low thermal conductivity (k) metal/polymer support rod. The requirements were to be fully ON above 300 K and fully OFF below 260 K. A series of four tests were carried out to verify/qualify the prototypes. In the first (non-vacuum) test, the thermal switches were cooled with freeze-spray and the non-conductive rod in the OFF thermal path allowed electrical resistance to confirm the 273 K as-designed ON/OFF actuation temperature. In the second (vacuum) test, a calibrated Q-meter was used, which indicated 5 W/K ON, 0.002 W/K OFF conductance (2500:1 ON/OFF ratio). To increase readiness to TRL6, a vibration test with pre/post thermal cycling followed by a 36-day test in a relevant environment were also carried out. This paper describes the development program and on-going related work at JPL.

Bugby, David C.↗

NASA NTRS2021

Extended Stroke and Miniaturized Reverse-Operation DTE Thermal Switches

This paper describes two advanced thermal switches under development that are offshoots of the recently flight-qualified 2500:1 reverse-operation differential thermal expansion (DTE) thermal switch (ROD-TSW). The first is the extended stroke ROD-TSW (ES-ROD-TSW) while the second is the miniaturized ROD-TSW (mini-ROD-TSW). Each employs multiple diametrically nested DTE stages in contrast to the single-stage ROD-TSW. The ES-ROD-TSW employs two stages and a negative CTE material known as Allvar and its main purpose is to extend its stroke for use in non-vacuum planetary environments. The mini-ROD-TSW employs four stages to miniaturize its size for use in compact lunar instruments and rovers. The ES-ROD-TSW was TVAC tested at JPL and its ON/OFF ratio is 13000:1 based on a measured ON conductance of 6.89 W/K and a calculated OFF conductance of 0.00053 W/K. The mini-ROD-TSW is targeted to have an ON conductance of 1.5 W/K and an OFF conductance of 0.0015 W/K, both verified by analysis. Test verification of the mini-ROD-TSW remains to be carried out. The paper will provide design/performance details of each device.

Farmer, Jeffery T.↗

DOE OSTI2024

Small‐Molecule Mixed Ionic‐Electronic Conductors for Efficient N‐Type Electrochemical Transistors: Structure‐Function Correlations

Abstract The fundamental challenge in electron‐transporting organic mixed ionic‐electronic conductors (OMIECs) is simultaneous optimization of electron and ion transport. Beginning from Y6‐type/U‐shaped non‐fullerene solar cell acceptors, we systematically synthesize and characterize molecular structures that address the aforementioned challenge, progressively introducing increasing numbers of oligoethyleneglycol (OEG; g) sidechains from 1 g to 3 g, affording OMIECs 1gY, 2gY, and 3gY, respectively. The crystal structure of 1gY preserves key structural features of the Y n series: a U‐shaped/planar core, close π–π molecular stacking, and interlocked acceptor groups. Versus inactive Y6 and Y11, all of the new glycolated compounds exhibit mixed ion‐electron transport in both conventional organic electrochemical transistor (cOECT) and vertical OECT (vOECT) architectures. Notably, 3gY with the highest OEG density achieves a high transconductance of 16.5 mS, an on/off current ratio of ~10 6 , and a turn‐on/off response time of 94.7/5.7 ms in vOECTs. Systematic optoelectronic, electrochemical, architectural, and crystallographic analysis explains the superior 3gY‐based OECT performance in terms of denser n gY OEG content, increased crystallite dimensions with decreased long‐range crystalline order, and enhanced film hydrophilicity which facilitates ion transport and efficient redox processes. Finally, we demonstrate an efficient small‐molecule‐based complementary inverter using 3gY vOECTs, showcasing the bioelectronic applicability of these new small‐molecule OMIECs.

Cho, Yongjoon↗

DOE OSTI2024

Small‐Molecule Mixed Ionic‐Electronic Conductors for Efficient N‐Type Electrochemical Transistors: Structure‐Function Correlations

Abstract The fundamental challenge in electron‐transporting organic mixed ionic‐electronic conductors (OMIECs) is simultaneous optimization of electron and ion transport. Beginning from Y6‐type/U‐shaped non‐fullerene solar cell acceptors, we systematically synthesize and characterize molecular structures that address the aforementioned challenge, progressively introducing increasing numbers of oligoethyleneglycol (OEG; g) sidechains from 1 g to 3 g, affording OMIECs 1gY, 2gY, and 3gY, respectively. The crystal structure of 1gY preserves key structural features of the Y n series: a U‐shaped/planar core, close π–π molecular stacking, and interlocked acceptor groups. Versus inactive Y6 and Y11, all of the new glycolated compounds exhibit mixed ion‐electron transport in both conventional organic electrochemical transistor (cOECT) and vertical OECT (vOECT) architectures. Notably, 3gY with the highest OEG density achieves a high transconductance of 16.5 mS, an on/off current ratio of ~10 6 , and a turn‐on/off response time of 94.7/5.7 ms in vOECTs. Systematic optoelectronic, electrochemical, architectural, and crystallographic analysis explains the superior 3gY‐based OECT performance in terms of denser n gY OEG content, increased crystallite dimensions with decreased long‐range crystalline order, and enhanced film hydrophilicity which facilitates ion transport and efficient redox processes. Finally, we demonstrate an efficient small‐molecule‐based complementary inverter using 3gY vOECTs, showcasing the bioelectronic applicability of these new small‐molecule OMIECs.

Cho, Yongjoon↗

DOE OSTI2024

Design Principles of Diketopyrrolopyrrole‐Thienopyrrolodione Acceptor 1 –Acceptor 2 Copolymers

Abstract The design principles of acceptor 1 –acceptor 2 copolymers featuring alternating diketopyrrolopyrrole (DPP) and thienopyrrolodione (TPD) moieties are investigated. The investigated series of polymers is obtained by varying the aromatic linker between the two acceptor motifs between thiophene, thiazole, pyridine, and benzene. High electron affinities between 3.96 and 4.42 eV, facilitated by the synergy of the acceptor motifs are determined with optical gaps between 1.37 and 2.02 eV. Grazing incidence wide‐angle X‐ray scattering studies reveal a range of film morphologies after thermal annealing, including face‐on, end‐on and superstructure edge‐on‐like crystallites. Conversely, all materials form thin edge‐on layers on the polymer–air interface, as demonstrated by multi‐elemental near‐edge X‐ray absorption fine‐structure spectroscopy. The benefit of the electron‐deficient linkers thiazole and pyridine is evident: In organic field effect transistors, electron mobilities of up to 4.6 × 10 −2 cm 2 V −1 s −1 are obtained with outstanding on/off current ratios of 5 × 10 5 , facilitated by the absence of detectable hole transport in these materials. Viability for all‐polymer solar cells is assessed in active layer blends with the donor polymer PM6, yielding a maximum average power conversion efficiency of 4.8% and an open circuit voltage above 1 V.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing

Abstract Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS 2 nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10 3 . The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS 2 channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS 2 as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb 2+ in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.

36 MATERIALS SCIENCE↗