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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Influence of aluminum oxide film on thermocompression bonding of gold wire to evaporated aluminum film

The influence of Al surface condition on the thermocompression bonding of Au wires to Al electrodes for integrated electric circuits was studied. Au wires were connected to Al electrodes by nail-head bonding after various Al surface treatments. Bonding was evaluated by measuring the wire pull strength and fraction of the number of failures at Au-Al bonds to the total number of failures. Dependence of the fraction on applied load was derived theoretically with a parameter named critical load to take into consideration the differences in Al surface condition. The relation also held explicately for various surface treatments. Characterization of the Al surface was carried out by electron microscopy for chemical analysis.

Iwata, S.↗
NASA NTRS1997

Investigation of Field Emitter Array Vacuum Microtriodes for Space Electronics Applications

Research into processing techniques for fabrication of vacuum microelectronic devices has been carried out, with special emphasis being given to the growth of silicon dioxide thin films. Oxide films ranging from 30 nm to approximately 2 micrometers have been grown on single crystal silicon wafers. Metal-oxide-semiconductor capacitor test structures have been made from some of these oxide films, and current-versus-voltage plots for these structures have been measured. It has been observed that the rate of applied voltage across the oxide films produces marked differences in measured leakage current. Breakdown fields across two of the thinnest oxide films have been measured and are comparable with highest values reported in literature. Several silicon wafers were processed to make field- emitter array diodes, and were delivered to collaborators at NASA-Lewis Research Center for final fabrication steps and testing.

Smith, Mark A.↗
NASA NTRS1966

Titanium oxide thin films

Titanium oxide thin film capacitor with large temperature dependence for detecting infrared radiation

THIN FILM↗
NASA NTRS1976

The nature of surfaces and their influence in wear mechanisms

The wear of materials is strongly dependent upon the nature of the solid surfaces in contact, their properties and the nature of their films. Oxide films, orientation, crystal transformations, adhesive binding, crystal structure, hardness, and the presence of alloying agents are all shown to affect one or more of the forms of wear. The three most common forms of wear, adhesive, abrasive, and corrosive, are discussed in terms of the way each is affected by various material properties. Results presented indicate how wear can be optimized by concern for properties of materials.

Buckley, D. H.↗
NASA NTRS1984

Epitaxial thinning process

A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

Siegel, C. M.↗
NASA NTRS1983

Cleaning chemistry of InSb(100) molecular beam epitaxy substrates

InSb has been used as a substrate for molecular beam epitaxy. For good epitaxial growth, a substrate surface which is smooth and clean on an atomic scale is required. Chemical cleaning procedures provide an oxide film to passivate the surface. This film is then desorbed by in situ heating. The material forming the film should, therefore, have a high vapor pressure at some temperature less than the substrate melting temperature. A chloride film appears to satisfy the latter requirement. The present investigation is, therefore, concerned with the formation of a chloride film rather than an oxide film. Carbon contamination has been found to cause problems in chemical cleaning procedures. The level of carbon contamination found in the case of chloride film formation, is therefore compared with the corresponding level observed in procedures using oxide films. It appears that a chloride film grown in connection with a short exposure time to a Cl2 plasma is preferable to other passivation films studied.

Vasquez, R. P.↗
NASA NTRS1995

Reactively Deposited Aluminum Oxide and Fluoropolymer Filled Aluminum Oxide Protective Coatings for Polymers

Reactive ion beam sputter deposition of aluminum simultaneous with low energy arrival of oxygen ions at the deposition surface enables the formation of highly transparent aluminum oxide films. Thick (12 200 A), adherent, low stress, reactively deposited aluminum oxide films were found to provide some abrasion resistance to polycarbonate substrates. The reactively deposited aluminum oxide films are also slightly more hydrophobic and more transmitting in the UV than aluminum oxide deposited from an aluminum oxide target. Simultaneous reactive sputter deposition of aluminum along with polytetrafluoroethylene (PTFE Teflon) produces fluoropolymer-filled aluminum oxide films which are lower in stress, about the same in transmittance, but more wetting than reactively deposited aluminum oxide films. Deposition properties, processes and potential applications for these coatings will be discussed.

Rutledge, Sharon K.↗
NASA NTRS2009

Thin-Film Solid Oxide Fuel Cells

The development of thin-film solid oxide fuel cells (TFSOFCs) and a method of fabricating them have progressed to the prototype stage. This can result in the reduction of mass, volume, and the cost of materials for a given power level.

Chen, Xin↗
NASA NTRS1993

Mechanism of incipient oxidation of bulk chemical vapor deposited Si3N4

X-ray photoelectron spectroscopy was employed, in conjunction with ion bombardment, to analyze the chemical composition profile across thin (less than 50 nm) oxide films on chemically vapor deposited Si3N4. The thermal oxides were grown in dry oxygen at 1100 C on samples with or without native oxide film (formed in room air). The results show that the thermal oxidation product was silicon oxynitride of graded N:O ratio, and that the presence of a native oxide film promotes the formation of a SiO2 crust over the oxynitride. It is proposed that the fundamental mechanism of Si3N4 oxidation is progressive O-for-N substitution in the silicon oxynitride unit tetrahedron, which is best designated SiN(2-x)O(2+x), where x is also an index of depth. The corresponding equation for nonstoichiometric oxidation of Si3N4 describes a bulk (rather than an interface) reaction process, with significant implications for O2 and N2 fluxes and diffusivities.

Ogbuji, L. U. T.↗
NASA NTRS1994

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

Kim, Jongmin↗
NASA NTRS1989

A study of native oxides of beta-SiC using Auger electron spectroscopy

Thermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.

Chaudhry, M. Iqbal↗
NASA NTRS1983

NASA interdisciplinary collaboration in tribology. A review of oxidational wear

An in-depth review of oxidational wear of metals is presented. Special emphasis is given to a description of the concept of oxidational wear and the formulation of an Oxidational Wear Theory. The parallelism between the formation of an oxide film for dry contact conditions and the formation of other surface films for a lubricated contact is discussed. The description of oxidational wear is prefaced with a unification of wear modes into two major classes of mild and severe wear including both lubricated and dry contacts. Oxidational wear of metals is a class of mild wear where protective oxide films are formed at real areas of contact and during the time of contact at temperataure T sub c. When the oxide reaches a critical thickness, frequently in the range of 1 to 3 microns, the oxide breaks up and eventually appears as a wear particle. These oxides are preferentially formed on plateaux which alternately carry the load as they reach their critical thickness and are removed. If the system is operated at elevated temperatures, thick oxides can form both out of contact and between the plateaux. Temperature is important in determining the structure of the oxide film present. Spinel oxide (Fe3O4) which forms above 300 C is more protective than the lower temperature rhomobohedral (alpha-Fe2O3) oxide which is abrasive. An Oxidational Wear Theory is derived using a modified Archard wear law expressed in terms of activation energy (Qp) and Arrhenius constant (Ap).

Quinn, T. F. J.↗
NASA NTRS2004

Oxide Ceramic Films Grown on 55Ni-45Ti for NASA and Department of Defense Applications: Unidirectional Sliding Friction and Wear Evaluation

An investigation was conducted to examine the friction and wear behavior of the two types of oxide ceramic films furnished by the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) under Space Act Agreement SAA3 567. These two types of oxide ceramics were grown on 55Ni-45Ti (60 wt% Ni and 40 wt% Ti) substrates: one was a TiO2 with no other species (designated the B film) and the other was a TiO2 with additional species (designated the G film). Unidirectional ball-on-disk sliding friction experiments were conducted with the oxide films in contact with sapphire at 296 K (23 C) in approx. 50-percent relative humidity laboratory air in this investigation. All material characterization and sliding friction experiments were conducted at the NASA Glenn Research Center. The results indicate that both films greatly improve the surface characteristics of 55Ni-45Ti, enhancing its tribological characteristics. Both films decreased the coefficient of friction by a factor of 4 and increased wear resistance by a two-figure factor, though the B film was superior to the G film in wear resistance and endurance life. The levels of coefficient of friction and wear resistance of both films in sliding contact with sapphire were acceptable for NASA and Department of Defense tribological applications. The decrease in friction and increase in wear resistance will contribute to longer wear life for parts, lower energy consumption, reduced related breakdowns, decreased maintenance costs, and increased reliability.

Miyoshi, Kazuhisa↗
NASA NTRS2005

Oxide Ceramic Films Grown on 60 Nitinol for NASA and Department of Defense Applications

Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

Miyoshi, Kazuhisa↗
NASA NTRS1988

Producing CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗
NASA NTRS1991

CCD imaging sensor with flashed backside metal film

A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000.ANG.) by so overthinning the backside as to place the depletion edge at the surface and depositing a thin transparent metal film of about 10.ANG. on a native-quality oxide film of less than about 30.ANG. grown on the thinned backside. The metal is selected to have a higher work function than that of the semiconductor to so bend the energy bands (at the interface of the semiconductor material and the oxide film) as to eliminate wells that would otherwise trap minority carriers. A bias voltage may be applied to extend the frontside depletion edge to the interface of the semiconductor material with the oxide film in the event there is not sufficient thinning. This metal film (flash gate), which improves and stabilizes the quantum efficiency of a CCD imaging sensor, will also improve the QE of any p-n junction photodetector.

Janesick, James R.↗