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43 records · Page 3

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NASA NTRS2007

Measurement and Simulation of the Variation in Proton-Induced Energy Deposition in Large Silicon Diode Arrays

The proton induced charge deposition in a well characterized silicon P-i-N focal plane array is analyzed with Monte Carlo based simulations. These simulations include all physical processes, together with pile up, to accurately describe the experimental data. Simulation results reveal important high energy events not easily detected through experiment due to low statistics. The effects of each physical mechanism on the device response is shown for a single proton energy as well as a full proton space flux.

Howe, Christina L.↗

DOE OSTI2021

Current generation from radiation with diamond diode-based devices for detection or power generation

Diamond diode-based devices are configured to convert radiation energy into electrical current, useable for sensing (i.e., detection) or delivery to a load (i.e., energy harvesting). A diode-based detector includes an intrinsic diamond layer arranged between p-type diamond and n-type diamond layers, with the detector further including at least one of (i) a boron containing layer arranged proximate to the n-type and/or the intrinsic diamond layers, or (ii) an intrinsic diamond layer thickness in a range of 10 nm to 300 microns. A diode-based detector may be operated in a non-forward biased state, with a circuit used to transmit a current pulse in a forward bias direction to reset a detection state of the detector. An energy harvesting device may include at least one p-i-n stack (including an intrinsic diamond layer between p-type diamond and n-type diamond layers), with a radioisotope source arranged proximate to the at least one p-i-n stack.

Holmes, Jason M.↗

NASA NTRS2005

Development of Ultra-High Sensivity Silicon Carbide Detectors

A variety of silicon carbide (SiC) detectors have been developed to study the sensitivity of SiC ultraviolet (UV) detectors, including Schottky photodiodes, p-i-n photodiodes, avalanche photodiodes (APDs), and single photon-counting APDs. Due to the very wide bandgap and thus extremely low leakage current, Sic photo-detectors showed excellent sensitivity. The specific detectivity, D*, of SiC photodiodes are orders of magnitude higher than that of their competitors, such as Si photodiodes, and comparable to the D* of photomultiplier tubes (PMTs). To pursue the ultimate detection sensitivity, SiC APDs and single photon-counting avalanche diodes (SPADs) have also been fabricated. By operating the SiC APDs at a linear mode gain over 10(exp 6), SPADs in UV have been demonstrated. SiC UV detectors have great potential for use in solar blind UV detection and biosensing. Moreover, SiC detectors have excellent radiation hardness and high temperature tolerance which makes them ideal for extreme environment applications such as in space or on the surface of the Moon or Mars.

Yan, Feng↗

NASA NTRS1993

Radiation effects in Ga(0.47)In(0.53)As solar cells

The effects of irradiating Ga(0.47)In(0.53)As p-i-n junctions with 1 MeV electrons were measured using Deep Level Transient Spectroscopy (DLTS) and both dark and illuminated (1 sun, air mass zero (AM0)) current-voltage (I-V) measurements. The I-V measurements were made over the range 100K less than T less than 350K. Temperature coefficients of the Ga(0.47)In(0.53)As photovoltaic parameters are presented which follow the same general behavior as other solar cell materials (e.g. Si and GaAs). Fits of the dark I-V data to the two term diode equation before irradiation were satisfactory, yielding an estimated band-gap energy of 0.79 eV. The recombination component of the dark current was found to increase linearly with fluence. DLTS detected two radiation-induced defect levels one shallow (E(sub c)-0.10 eV) and one near mid-gap (E(sub c)-0.29 eV), and it is the near mid-gap level which is expected to be the cause of the dark current increase. The radiation-induced degradation of the open circuit voltage is shown to be accurately predicted from the dark I-V measurements. The degradation of the open circuit voltage dominated the radiation response of the photovoltaic parameters while the short circuit current was only moderately degraded. This behavior is qualitatively explained in terms of the base thickness and dopant level. Appropriate changes in the device structure are suggested which should increase the radiation resistance. Isochronal thermal annealing induced recovery in the photovoltaic parameters at approximately 400K, coinciding with an annealing stage of the near mid-gap defect level.

Walters, R. J.↗

DOE OSTI2021

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Breakdown characteristics of deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiodes

A top-illuminated deep-ultraviolet Al 0.6 Ga 0.4 N p-i-n avalanche photodiode (APD) structure was designed and grown by metalorganic chemical vapor deposition on an AlN bulk substrate and on two different quality AlN/sapphire templates, and APDs were fabricated and tested. The APD devices with a circular diameter of 20 μm have demonstrated a distinctive reverse-bias breakdown behavior. The reverse breakdown voltage of the APDs is approximately -140 V, which corresponds to a breakdown electric field of 6–6.2 MV/cm for the Al 0.6 Ga 0.4 N material as estimated by Silvaco TCAD simulation. The APDs grown on the AlN bulk substrate show the lowest leakage current density of < 1 × 10 -8 A/cm 2 (at low reverse bias) compared to that of the devices grown on the AlN templates. From the photocurrent measurement, a maximum gain (current limited) of 1.2 × 10 4 is calculated. The average temperature coefficients of the breakdown voltage are negative for APD devices fabricated from both the AlN bulk substrate and the AlN templates, but these data show that the coefficient is the least negative for the APD devices grown on the low-dislocation-density AlN bulk substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1987

Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

Bratt, Peter R.↗