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51 records · Page 3

Record Low NEP in the Hot-Electron Titanium Nanobolometers

We are developing hot-electron superconducting transition-edge sensors (TES) capable of counting THz photons and operating at T = 0.3K. We fabricated superconducting Ti nanosensors with Nb contacts with a volume of approx. 3x10(exp -3) cu microns on planar Si substrate and have measured the thermal conductance due to the weak electron-phonon coupling in the material G = 4x10(exp -14) W/K at 0.3 K. The corresponding phonon-noise NEP = 3x10(exp -19) W/Hz(sup 1/2). Detection of single optical photons (1550nm and 670nm wavelength) has been demonstrated for larger devices and yielded the thermal time constants of 30 microsec at 145 mK and of 25 microsec at 190 mK. This Hot-Electron Direct Detector (HEDD) is expected to have a sufficient energy resolution for detecting individual photons with (nu) > 1 THz where NEP approx. 3x10(exp -20) W/Hz(sup 1/2) is needed for spectroscopy in space.

transition edge sensors↗

Monolayer Graphene Bolometer as a Sensitive Far-IR Detector

In this paper we give a detailed analysis of the expected sensitivity and operating conditions in the power detection mode of a hot-electron bolometer (HEB) made from a few micro m(sup 2) of monolayer graphene (MLG) flake which can be embedded into either a planar antenna or waveguide circuit via NbN (or NbTiN) superconducting contacts with critical temperature approx. 14 K. Recent data on the strength of the electron-phonon coupling are used in the present analysis and the contribution of the readout noise to the Noise Equivalent Power (NEP) is explicitly computed. The readout scheme utilizes Johnson Noise Thermometry (JNT) allowing for Frequency-Domain Multiplexing (FDM) using narrowband filter coupling of the HEBs. In general, the filter bandwidth and the summing amplifier noise have a significant effect on the overall system sensitivity.

noise thermometry↗

Ultrasonic coupling to optically generated charge carriers in CdS: Physical phenomena and applications

Phonon-charge carrier interactions are studied as well as ultrasonic resonators. Sensitivity enhancement factors predicted by one dimensional resonator theory are verified and several sensitive ultrasonic experimental techniques are developed. Measurements are reported of an anomalous sign reversal of the acoustoelectric voltage in a CdS resonator. Applications of CdS as an ultrasonic power detector are described.

Heyman, J. S.↗

A Hot-electron Direct Detector for Radioastronomy

A new approach is proposed to improve the sensitivity of direct-detection bolometers. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or superconductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as 7(exp 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10 - 100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant approx. 10(exp -3) to 10(exp -5) S at T approx. = 0.1 - 0.3 K will exhibit photon-noise limited performance in millimeter and subn-millimeter range. The bolometer will have a figure-of-merit NEk square root of tau approx. = 10(exp -22) 10(exp -21) W/Hz at 100 mK which is 10(exp 3) times smaller than that of a state-of-the-art bolometer. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity This research was performed by the Center for Space Microelectronics Technology, JPL, California Institute of Technology, under the contract for NASA.

Karasik, B. S.↗

Small Pitch Transition-Edge Sensors with Broadband High Spectral Resolution for Solar Physics

We are developing small pitch transition-edge sensor (TES) X-ray detectors optimized for solar astronomy. These devices are fabricated on thick Si substrates with embedded Cu heat-sink layer. We use 35 x 35 square micrometers Mo/Au TESs with 4.5 micrometer thick Au absorbers. We have tested devices with different geometric absorber stem contact areas with the TES and surrounding substrate area. This allows us to investigate the loss of athermal phonons to the substrate. Results show a correlation between thc stem contact area and a broadening in the spectral line shape indicative of athermal phonon loss. When the contact area is minimized we have obtained exceptional broadband spectral resolution of 1.28 plus or minus 0.03 eV at an energy of 1.5 keV, 1.58 plus or minus 0.07 eV at 5.9 keV and 1.96 plus or minus 0.08 eV at 8 keV. The linearity in the measured gain scale is understood in the context of the longitudinal proximity effect from the electrical bias leads resulting in transition characteristics that are strongly dependent upon TES size.

Smith, S. J.↗

A Hot-Electron Far-Infrared Direct Detector

A new approach is proposed to improve the sensitivity of direct-detection bolometers at millimeter, submillimeter and far-infrared wavelengths. The idea is to adjust a speed of the thermal relaxation of hot-electrons in a nanometer size normal metal or super-conductive transition edge bolometer by controlling the elastic electron mean free path. If the bolometer contacts are made of a superconductor with high critical temperature (Nb, Pb etc.) then the thermal diffusion into the contacts is absent because of the Andreev's reflection and the electron-phonon relaxation is the only mechanism for heat removal. The relaxation rate should behave as T(sup 4)l at subkelvin temperatures (l is the electron elastic mean free path) and can be reduced by factor of 10-100 by decreasing l. Then an antenna- or waveguide-coupled bolometer with a time constant about 10(exp -3) to 10(exp -5) s at T approximately equals 0.1-0.3 K will exhibit photon-noise limited performance in millimeter and submillimeter range. The choice of the bolometer material is a tradeoff between a low electron heat capacity and fabrication. A state-of-the-art bolometer currently offers NEP = 10(exp -17) W(Square root of (Hz)) at 100 mK along with a approximately equals 2 msec time constant. The bolometer we propose will have a figure-of-merit, NEP(square root (r)), which is 10(exp 3) times smaller. This will allow for a tremendous increase in speed which will have a significant impact for observational mapping applications. Alternatively, the bolometer could operate at higher temperature with still superior sensitivity. This device can significantly increase a science return and reduce the cost for future observational missions. This research was performed by the Center for Space Microelectronics Technology, Jet Propulsion Laboratory, California Institute of Technology, and was sponsored by NASA, Office of Space Science.

Karasik, B. S.↗

Optical detector having a plurality of matrix layers with cobalt disilicide particles embedded therein

Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers of phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.

Fathauer, Robert W.↗

High Broadband Spectral Resolving Transition-Edge Sensors for High Count-Rate Astrophysical Applications

We are developing arrays of transition-edge sensor (TES) X-ray detectors optimized for high count-rate solar astronomy applications where characterizing the high velocity motions of X-ray jets in solar flares is of particular interest. These devices are fabricated on thick Si substrates and consist of 35x35micron^2 TESs with 4.5micron thick, 60micron pitch, electroplated absorbers. We have tested devices fabricated with different geometric stem contact areas with the TES and surrounding substrate area, which allows us to investigate the loss of athermal phonons to the substrate. Results show a correlation between the stem contact area and a non-Gaussian broadening in the spectral line shape consistent with athermal phonon loss. When the contact area is minimized we have obtained remarkable board-band spectral resolving capabilities of 1.3 plus or minus 0.leV at an energy of 1.5 keV, 1.6 plus or minus 0.1 eV at 5.9 keV and 2.0 plus or minus 0.1 eV at 8 keV. This, coupled with a capability of accommodating 100's of counts per second per pixel makes these devices an exciting prospect of future x-ray astronomy applications.

Smith, Stephen↗

Temperature-dependent optical properties of Cd(1-x),Zn(x),Te substitute material

In this study, we report cryogenic optical properties of Cd(l-x), Zn(x), Te wafers that are used as substrate seed layers in the manufacturing of HgCdTe focal-plane array detectors. These studies are motivated by the fact that the substrate optical properties influence the overall detector performance. The studies consist of measuring the substrate frequency dependent transmittance T(W) and reflectance R(W) above and below the optical band-gap in the UV/Visible and infrared frequency ranges, and with temperature variation of the sample from 5 to 300 K. Determination of the optical absorption from these measurements show that the optical absorption energy gap near 1.6 eV shows a substantial increase as the temperature is reduced from 300 to 5 K. Furthermore, we observe the presence of infrared-active optical phonons whose peak frequency shifts as the temperature of the sample is varied over the measured temperature range. The theoretical frequency dependent optical conductivity, with allowance for redistribution of spectral weight among the interband transition charge carriers, will be discussed.

Quijada, Manuel A.↗

Performing spectroscopic and specific heat studies of improper ferroelectrics

The results of infrared measurements on Ni-Br, Cu-Cl, and Fe-I boracite improper ferroelectrics and far infrared measurements of Ni-Br boracite are presented. The boracites have the general formula X3B7O3Y, where X = divalent metal and Y = halogen. They undergo a first order phase transition from a high temperature paraelectric phase with cubic symmetry to a ferroelectric phase with orthorhombic symmetry. The boracites are "improper ferroelectrics" since the spontaneous polarization is not the primary order parameter in the cubic-orthorhombic phase transition. Current understanding of these materials is that the primary order parameter is associated with a doubly degenerate zone-boundary phonon in the cubic phase. The degenerate critical modes become homogeneous and split into the A sub 1 and A sub 2 modes in the orthorhombic phase, doubling the volume of the primitive cell. An harmonic coupling between the softing A sub 1 and a low frequency A sub 1 optic mode induces a spontaneous polarization as a secondary effect in the ferroelectric phase. This secondary non-critical nature of the ferroelectric mode earns these materials the "improper" title and is responsible for their unique properties and high figure of merit in detector use.

Coleman, L. B.↗

Integrated Electron-tunneling Refrigerator and TES Bolometer for Millimeter Wave Astronomy

We describe progress in the development of a close-packed array of bolometers intended for use in photometric applications at millimeter wavelengths from ground- based telescopes. Each bolometer in the may uses a proximity-effect Transition Edge Sensor (TES) sensing element and each will have integrated Normal-Insulator-Superconductor (NIS) refrigerators to cool the bolometer below the ambient bath temperature. The NIS refrigerators and acoustic-phonon-mode-isolated bolometers are fabricated on silicon. The radiation-absorbing element is mechanically suspended by four legs, whose dimensions are used to control and optimize the thermal conductance of the bolometer. Using the technology developed at NIST, we fabricate NIS refrigerators at the base of each of the suspension legs. The NIS refrigerators remove hot electrons by quantum-mechanical tunneling and are expected to cool the biased (approx.10 pW) bolometers to <170 mK while the bolometers are inside a pumped 3He-cooled cryostat operating at approx.280 mK. This significantly lower temperature at the bolometer allows the detectors to approach background-limited performance despite the simple cryogenic system.

Silverberg, R. F.↗

Development of the Nano-HEB Array for Low-Background Far-IR Applications

We present an overview of the recent progress made in the development of a far-IR array of ultrasensitive hot-electronnanobolometers (nano-HEB) made from thin titanium (Ti) films. We studied electrical noise, signal and noisebandwidth, single-photon detection, optical noise equivalent power (NEP), and a microwave SQUID (MSQUID) basedfrequency domain multiplexing (FDM) scheme. The obtained results demonstrate the very low electrical NEP down to1.5x10-(sup 2)? W/Hz(sup 1)/(sup 2) at 50 mK determined by the dominating phonon noise. The NEP increases with temperature as ~ T(sup 3)reaching ~ 10-(sup 1)? W/Hz(sup 1)/(sup 2) at the device critical temperature TC = 330-360 mK. Optical NEP = 8.6x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 357mK and 1.4x10-(sup 1)? W/Hz(sup 1)/(sup 2) at 100 mK respectively, agree with thermal and electrical data. The optical couplingefficiency provided by a planar antenna was greater than 50%. Single 8-?m photons have been detected for the first timeusing a nano-HEB operating at 50-200 mK thus demonstrating a potential of these detectors for future photon-countingapplications in mid-IR and far-IR. In order to accommodate the relatively high detector speed (~ ?s at 300 mK, ~ 100 ?sat 100 mK), an MSQUID based FDM multiplexed readout with GHz carrier frequencies has been built. Both the readoutnoise ~ 2 pA/Hz(sup 1)/(sup 2) and the bandwidth > 150 kHz are suitable for nano-HEB detectors.

single-photon↗

Evaluation of composite bolometers at 0.4 Kelvin

Composite bolometer structures have provided the most sensitive IR detectors for operation at helium-4 temperatures of 1.5K. Below 1.5K the electrical and thermal properties change significantly and the performance characteristics cannot be accurately extrapolated for composite bolometers at helium-3 temperatures of 0.4K. The paper deals with experimentally assessed performance of composite bolometers at 0.4K. It is found that sensitivity estimates derived from electrical or load curve properties can overestimate the responsivity to radiation by several orders of magnitude depending upon a particular material behavior. For many near-millimeter applications background power levels are several nanowatts and the associated photon noise plus Johnson and phonon noise components impose a fundamental detection limit of about 5 x 10 to the -15thW/Hz to the -1/2. We have successfully fabricated composite bolometers which at 0.4 K and millimeter wavelengths achieve a noise equivalent power of 7 x 10 to the -15thW/Hz to the -1/2 coupled with a large absorbing area (0.3 sq cm) and a fast response time (2 msec.).

El-Ataway, S.↗

Physics and design of advanced IR bolometers and photoconductors

The state-of-the-art in photoconductors and bolometers is reviewed, centering on the materials development and concepts of extrinsic Si and Ge devices. It is suggested that in the field of 2-D detector arrays the hybrid circuits containing a photoconductor or a photodiode array, bonded with In solder to a switched MOS readout device with up to 60 x 60 elements, will produce superior performance. Other systems discussed include charge-coupled devices, developed for visible-light imaging and adapted to IR imaging, and charge-injection devices, a monolithic combination of a standard photoconductor and a metal-insulator-semiconductor capacitor. Finally, it is pointed out that a nonequilibrium theory of bolometer noise demonstrates the possibility of reducing the traditionally accepted noise limits by 60 percent for Johnson noise and 30 percent for the noise from phonons in the thermal link of the bolometer.

Haller, E. E.↗