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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Fine Structure of the Low-Frequency Raman Phonon Bands of Single-Wall Carbon Nanotubes

The Raman spectra of singled-wall carbon nanotubes (SWNT) produced by laser and are process were studied between 5 and 500 kappa. The line width vs. temperature dependence of the low-frequency Raman bands between 150 and 200/ cm deviates from that expected for phonon decay through phonon-phonon scattering mechanism. The experimental results and their analysis provided convincing evidence that each of the low-frequency Raman lines is a superposition of several narrower Raman lines corresponding to tubes of nearly the same diameter. The application of Raman spectroscopy to probe the distribution of SWNT by both diameter and chirality is discussed.

Iliev, M. N.↗

Microscopic Modeling of Intersubband Resonances in InAs/AlSb Quantum Wells

Linear absorption spectra from intersubband resonance in InAs/AlSb quantum wells are analyzed theoretically using the intersubband semiconductor Bloch equation approach. Our model goes beyond the Hartree-Fock approximation and treats particle-particle correlations under the second Born approximation. Electron-electron and -LO phonon scatterings from such a treatment describe intrinsic line broadening to the intersubband resonance. Electron subbands are determined self-consistently with a spurious-state-free 8-band k.p Hamiltonian under the envelope function approximation. To compare with experimental measurements, we also included line broadening due to electron-interface roughness scattering. Excellent agreement was achieved for temperature-dependent absorption spectra in the mid-infrared frequency range, after taking into careful account the interplay of material parameters, nonparabolicity in bandstructure, and many-body effects.

Li, Jian-Zhong↗

Many-Body Effects and Lineshape of Intersubband Transitions in Semiconductor Quantum Wells

Intersubband Transition (ISBT) infrared (IR) absorption and PL in InAs/AlSb were studied for narrow Quantum Wells (QWs). A large redshift was observed (7-10 meV) as temperature increased. A comprehensive many-body theory was developed for ISBTs including contributions of c-c and c-phonon scatterings. Many-body effects were studied systematically for ISBTs. Redshift and linewidth dependence on temperature, as well as spectral features were well explained by theory.

Ning, Cun-Zheng↗

CoSb(sub 3)-IrSb(sub 3)Solid Solutions: Preparations and Characterization

The binary antimonide compounds of the skutterudite family have a good potential for thermoelectric applications as recent results at JPL have shown. However, the room temperature thermal conductivity of these materials is about 10 Wm(sup -1)K(sup -1) with an 80 % contribution from the lattice. To achieve maximum ZT values, the lattice thermal conductivity needs to be lowered. Because the lattice thermal conductivity of solid solutions can substantially decrease due to the addition of point defect phonon scattering (all state-of-the-art thermoelectric materials are solid solutions), a study of the formation of solid solutions between the antimonide skutterudite compounds is of interest. The preparation and characterization of both p-type and n-type CoSb(sub 3)-IrSb(sub 3) solid solutions by several techniques is reviewed in this paper. Experimental results showed that solid solutions were successfully formed in a wide range of compositions. The changes in the thermoelectric properties indicated the influence of a strong point defect scattering, resulting in large decreases in Hall mobility and thermal conductivity. The potential for high ZT values in CoSb(sub 3)-IrSb(sub 3) solid solutions is discussed.

mobility↗

Dyakonov-Perel Effect on Spin Dephasing in n-Type GaAs

A paper presents a study of the contribution of the Dyakonov-Perel (DP) effect to spin dephasing in electron-donor-doped bulk GaAs in the presence of an applied steady, moderate magnetic field perpendicular to the growth axis of the GaAs crystal. (The DP effect is an electron-wave-vector-dependent spin-state splitting of the conduction band, caused by a spin/orbit interaction in a crystal without an inversion center.) The applicable Bloch equations of kinetics were constructed to include terms accounting for longitudinal optical and acoustic phonon scattering as well as impurity scattering. The contributions of the aforementioned scattering mechanisms to spin-dephasing time in the presence of DP effect were examined by solving the equations numerically. Spin-dephasing time was obtained from the temporal evolution of the incoherently summed spin coherence. Effects of temperature, impurity level, magnetic field, and electron density on spin-dephasing time were investigated. Spin-dephasing time was found to increase with increasing magnetic field. Contrary to predictions of previous simplified treatments of the DP effect, spin-dephasing time was found to increase with temperature in the presence of impurity scattering. These results were found to agree qualitatively with results of recent experiments.

Ning, C. Z.↗

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Park, Yeonjoon↗

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background (CMB) polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 gigahertz focal plane and now describe the fabrication of a 37-element dual-polarization detector module for measurement of the CMB at 90 gigahertz. The 72-TES (Transition Edge Sensor)-based bolometers in each module are coupled to a niobium-based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150 millikelvins and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump-bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 80 millimeters in size comprise two focal planes. These, along with the recently delivered 40 gigahertz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University-led ground-based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Detectors↗

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 GHz focal plane and now describe the fabrication of the detector modules for measurement of the CMB at 90GHz. The 74-TES based bolometers in each module are coupled to a niobium based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150mK and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 90 mm in size comprise two focal planes. These, along with the recently delivered 40GHz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University led ground based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Characterization↗

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗

One-phonon transitions observed in the scattering of He atoms from a LiF/001/ surface.

For the scattering of a nearly monoenergetic beam of thermal-energy He atoms from a cleaved (001)LiF crystal surface, speed distributions of the reflected atoms are measured at suitably spaced scattering angles within the plane of incidence. From the measurements, elastic and one-phonon inelastic scattering processes are identified. Elastically scattered atoms distribute themselves in a set of sharp diffraction peaks. One-phonon inelastically scattered atoms are dispersed about each diffraction peak. The most probable velocities of the inelastically scattered atoms exhibit a characteristic sawtooth variation with scattering angle which, to first approximation, corresponds to conservation of the component of atom momentum tangent to the surface.-

Fisher, S. S.↗

Equilibrium Limit of Boundary Scattering in Carbon Nanostructures: Molecular Dynamics Calculations of Thermal Transport

It is widely known that graphene and many of its derivative nanostructures have exceedingly high reported thermal conductivities (up to 4000 W/mK at 300 K). Such attractive thermal properties beg the use of these structures in practical devices; however, to implement these materials while preserving transport quality, the influence of structure on thermal conductivity should be thoroughly understood. For graphene nanostructures, having average phonon mean free paths on the order of one micron, a primary concern is how size influences the potential for heat conduction. To investigate this, we employ a novel technique to evaluate the lattice thermal conductivity from the Green-Kubo relations and equilibrium molecular dynamics in systems where phonon-boundary scattering dominates heat flow. Specifically, the thermal conductivities of graphene nanoribbons and carbon nanotubes are calculated in sizes up to 3 microns, and the relative influence of boundary scattering on thermal transport is determined to be dominant at sizes less than 1 micron, after which the thermal transport largely depends on the quality of the nanostructure interface. The method is also extended to carbon nanostructures (fullerenes) where phonon confinement, as opposed to boundary scattering, dominates, and general trends related to the influence of curvature on thermal transport in these materials are discussed.

Haskins, Justin↗

Thermoelectric Performance Enhancement by Surrounding Crystalline Semiconductors with Metallic Nanoparticles

Direct conversion of thermal energy to electricity by thermoelectric (TE) devices may play a key role in future energy production and utilization. However, relatively poor performance of current TE materials has slowed development of new energy conversion applications. Recent reports have shown that the dimensionless Figure of Merit, ZT, for TE devices can be increased beyond the state-of-the-art level by nanoscale structuring of materials to reduce their thermal conductivity. New morphologically designed TE materials have been fabricated at the NASA Langley Research Center, and their characterization is underway. These newly designed materials are based on semiconductor crystal grains whose surfaces are surrounded by metallic nanoparticles. The nanoscale particles are used to tailor the thermal and electrical conduction properties for TE applications by altering the phonon and electron transport pathways. A sample of bismuth telluride decorated with metallic nanoparticles showed less thermal conductivity and twice the electrical conductivity at room temperature as compared to pure Bi2Te3. Apparently, electrons cross easily between semiconductor crystal grains via the intervening metallic nanoparticle bridges, but phonons are scattered at the interfacing gaps. Hence, if the interfacing gap is larger than the mean free path of the phonon, thermal energy transmission from one grain to others is reduced. Here we describe the design and analysis of these new materials that offer substantial improvements in thermoelectric performance.

Kim, Hyun-Jung↗

Correlation between stimulated scattering processes and laser-induced damage in crystalline quartz

The results of a systematic series of experiments to uncover possible correlation between laser-induced stimulated-Brillouin-scattering (SBS) phonons and damage in quartz are presented. Such correlation is confirmed and the various thresholds are established. The anomalous transmission factor under phonon generation is found to decay exponentially as predicted with increasing incident laser power. The LF SBS phonon is also demonstrated to be a sensitive probe for precatastrophic damage.

Yu, C.↗

Raman spectroscopic investigations of Hg-Cd-Te melts

Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.

Morrobel-Sosa, Anny↗

Improved electrical properties of n-type SiGe alloys

The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 microV/cm-K-squared can be achieved with carrier concentrations of 2.0 - 2.5 x 10 exp 20/cu cm and mobilities of 38-40 sq cm/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented. Initial results are presented on fabrication of n-type samples from ultrafine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter midfrequency phonons.

Scoville, A. N.↗

Method Developed for Improving the Thermomechanical Properties of Silicon Carbide Matrix Composites

Today, a major thrust for achieving engine components with improved thermal capability is the development of fiber-reinforced silicon-carbide (SiC) matrix composites. These materials are not only lighter and capable of higher use temperatures than state-of-the-art metallic alloys and oxide matrix composites (approx. 1100 C), but they can provide significantly better static and dynamic toughness than unreinforced silicon-based monolithic ceramics. However, for successful application in advanced engine systems, the SiC matrix composites should be able to withstand component service stresses and temperatures for the desired component lifetime. Since the high-temperature structural life of ceramic materials is typically controlled by creep-induced flaw growth, a key composite property requirement is the ability to display high creep resistance under these conditions. Also, because of the possibility of severe thermal gradients in the components, the composites should provide maximum thermal conductivity to minimize the development of thermal stresses. State-of-the-art SiC matrix composites are typically fabricated via a three-step process: (1) fabrication of a component-shaped architectural preform reinforced by high-performance fibers, (2) chemical vapor infiltration of a fiber coating material such as boron nitride (BN) into the preform, and (3) infiltration of a SiC matrix into the remaining porous areas in the preform. Generally, the highest performing composites have matrices fabricated by the CVI process, which produces a SiC matrix typically more thermally stable and denser than matrices formed by other approaches. As such, the CVI SiC matrix is able to provide better environmental protection to the coated fibers, plus provide the composite with better resistance to crack propagation. Also, the denser CVI SiC matrix should provide optimal creep resistance and thermal conductivity to the composite. However, for adequate preform infiltration, the CVI SiC matrix process typically has to be conducted at temperatures below 1100 C, which results in a SiC matrix that is fairly dense, but contains metastable atomic defects and is nonstoichiometric because of a small amount of excess silicon. Because these defects typically exist at the matrix grain boundaries, they can scatter thermal phonons and degrade matrix creep resistance by enhancing grain-boundary sliding. To eliminate these defects and improve the thermomechanical properties of ceramic composites with CVI SiC matrices, researchers at the NASA Glenn Research Center developed a high-temperature treatment process that can be used after the CVI SiC matrix is deposited into the fiber preform.

Bhatt, Ramakrishna T.↗