Search NASA⌕ Search

SEARCH · Search NASA

Results for “Photocurrent”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Progressive evolutions of non-fused ring electron acceptors toward efficient organic solar cells with improved photocurrent and reduced energy loss

Resolving competitive counterbalance between high external quantum efficiency (EQE) response and low energy loss is critical for achieving efficient organic solar cells (OSCs), including those based on low-cost non-fused-ring electron acceptor (NFREA). In this work, we performed a comparable study by utilizing four NFREAs with progressive evolutions in molecular structures, energetic levels, spectral coverages, crystallinity, etc, to pair with polymer donor J52. By regulating the terminal and side chains of NFREAs, the enhanced intramolecular charge transfer (ICT) effect allows O-PC-EH possessing the broader spectral coverage for higher photocurrent, the reduced energetic offset enables O-PC-EH-based device owning higher luminescence property for lower energy loss, the strengthened crystallinity endows O-PC-EH-based blend better charge transport property for less charge recombination. With those comprehensive managements from molecule to blend properties, the J52:O-PC-EH-based OSCs achieved the best efficiency of 14.4% (certified: 14.1%) with benefits in all the three device parameters. Here, this work reveals the importance of fine-tuning molecular structures of NFREAs according to paired polymer donor for maximizing the device performances.

14 SOLAR ENERGY↗
DOE OSTI2021

A light-induced phononic symmetry switch and giant dissipationless topological photocurrent in ZrTe 5

Dissipationless currents from topologically protected states are promising for disorder-tolerant electronics and quantum computation. In this work, we photogenerate giant anisotropic terahertz nonlinear currents with vanishing scattering, driven by laser-induced coherent phonons of broken inversion symmetry in a centrosymmetric Dirac material ZrTe 5 . Our work suggests that this phononic terahertz symmetry switching leads to formation of Weyl points, whose chirality manifests in a transverse, helicity-dependent current, orthogonal to the dynamical inversion symmetry breaking axis, via circular photogalvanic effect. The temperature-dependent topological photocurrent exhibits several distinct features: Berry curvature dominance, particle–hole reversal near conical points and chirality protection that is responsible for an exceptional ballistic transport length of ~10 μm. These results, together with first-principles modelling, indicate two pairs of Weyl points dynamically created by B 1u phonons of broken inversion symmetry. Such phononic terahertz control breaks ground for coherent manipulation of Weyl nodes and robust quantum transport without application of static electric or magnetic fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

A new platform for development of photosystem I based thin films with superior photocurrent: TCNQ charge transfer salts derived from ZIF-8

The transmembrane photosynthetic protein complex Photosystem I (PSI) is highly sought after for incorporation into biohybrid photovoltaic devices due to its remarkable photoactive electrochemical properties, chiefly driving charge separation with ~1 V potential and ~100% quantum efficiency. In pursuit of these integrated technologies, three factors must be simultaneously tuned, namely, direct redox transfer steps, three-dimensional coordination and stabilization of PSI aggregates, and interfacial connectivity with conductive pathways. Building on our recent successful encapsulation of PSI in the metal–organic framework ZIF-8, herein we use the zinc and imidazole cations from this precursor to form charge transfer complexes with an extremely strong organic electron acceptor, TCNQ. Specifically, the PSI-Zn-H 2 mim-TCNQ charge transfer salt complex was drop cast on ITO to form dense films. Subsequent voltammetric cycling induced cation exchange and electrochemical annealing of the film was used to enhance electron conductivity giving rise to a photocurrent in the order of 15 μA cm -2 . This study paves the way for a myriad of future opportunities for successful integration of this unique class of charge transfer salt complexes with biological catalysts and light harvesters.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Properties of photocurrent and metal contacts of highly resistive ultrawide bandgap semiconductors

Ultrawide bandgap (UWBG) semiconductors inherently exhibit very high electrical resistivities. This property presents not only challenges in probing their electrical transport properties but also difficulties to fabricate, understand, and characterize the electrical properties of metal contacts on these materials. Here, we report the measurements and analysis of the applied electric field dependence of photocurrent to reveal the effect of metal contacts on the transport properties of highly resistive h-BN. Our results indicate that even for h-BN with a room temperature resistivity as high as 1014 Ω cm, the as-deposited metal contact is not a completely blocking type as commonly assumed in previous analyses for other large bandgap insulating materials. By modifying the boundary condition between the metal/semiconductor interface, a quantitative description has been obtained, which can be used to determine if the metal contact is Ohmic or blocking type. This quantitative description should be applicable to all UWBG semiconductors with extremely high electrical resistivities. The work also provides a better understanding of how the metal contact type affects the transport properties of UWBG semiconductors in general.

Physics↗
DOE OSTI2021

Magnetic photocurrents in multifold Weyl fermions

Here, we examine the magneto-optical response of chiral multifold fermions. Specifically, we show that they are ideal candidates for observing the helical magnetic effect (HME) previously predicted for simple Weyl fermions. Unlike Weyl fermions, the HME is present in multifold fermions even in the simplest case where the low-energy dispersion is linear and spherically symmetric. In this ideal case, we derive an analytical expression for the HME and find it is proportional to the circular photogalvanic effect; for realistic parameters and accounting for the geometry of the setup, the HME photocurrent could be roughly the same order of magnitude as the circular photogalvanic effect observed in multifold fermions. Additional nonlinear and symmetry-breaking terms will ruin the quantization but not hurt the observation of the HME.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ballistic photocurrent driven by optical phonon modes in a polaronic ferroelectric

In this study, we investigate the effect of local electron-phonon coupling on nonlinear optical conductivity in an interacting ferroelectric system. Using real-time simulations, we show an enhancement in nonlinear conductivity under linearly polarized light due to generation of the phonon-assisted ballistic current in addition to the injection current generated by electron-hole pairs. The optically excited phonon modes generate an asymmetric carrier distribution that causes a strong directional ballistic current. The ballistic current enhances the photocurrent several times at above band-gap excitation frequencies and is sublinearly dependent on the excitation intensity. This strong phonon-assisted zero-frequency directional ballistic current demonstrates an alternative way to boost the bulk photovoltaic effect (BPVE) in electronic ferroelectric materials with strong local electron-phonon coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Unconventional Photocurrents from Surface Fermi Arcs in Topological Chiral Semimetals

The nonlinear optical responses from topological semimetals are crucial in both understanding the fundamental properties of quantum materials and designing next-generation light sensors or solar cells. However, previous work focused on the optical effects from bulk states only, disregarding the responses from topological surface states. Here, we propose a new surface-only photocurrent response from chiral Fermi arcs. Using the ideal topological chiral semimetal RhSi as a representative, we quantitatively compute the photogalvanic currents from Fermi arcs on different surfaces. By rigorous crystal symmetry analysis, we demonstrate that Fermi arc photogalvanic currents can be perpendicular to the bulk injection currents regardless of the choice of materials surface. We then generalize this finding to other cubic chiral space groups and predict material candidates. Our theory reveals a powerful notion where common crystalline symmetry can be used to completely disentangle bulk and surface optical responses in many conducting material families.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Photocurrent Nanoscopy of Quantum Hall Bulk

Understanding nanoscale electronic and thermal transport of two-dimensional (2D) electron systems in the quantum Hall regime, particularly in the bulk insulating state, poses considerable challenges. One of the primary difficulties arises from the presence of chiral edge channels, whose transport behavior obscures the investigation of the insulating bulk. Using near-field optical and photocurrent nanoscopy, we probe real-space variations of the optical and thermal dynamics of graphene in the quantum Hall regime without relying on complex sample or electrode geometries. Near the charge-neutrality point, we detect strong optical and photothermal signals from resonant inter-Landau-level (LL) magnetoexciton excitations between the zeroth and ± 1 st LLs, which gradually weaken with increasing doping due to Pauli blocking. Interestingly, at higher doping levels and full-integer LL fillings, photothermal signals reappear across the entire sample over an approximately 10 − μ m scale, indicating unexpectedly long cooling lengths and nonlocal photothermal heating through the insulating bulk. This observation suggests that thermal conductivity persists for the localized states even as electronic transport is suppressed—a clear violation of the Wiedemann-Franz law. Our experiments provide novel insights into nanoscale thermal and electronic transport in incompressible 2D gases, highlighting the roles of magnetoexcitons and chiral edge states in the thermo-optoelectric dynamics of the Dirac quantum Hall state. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗
DOE OSTI2020

Helicity-dependent photocurrents in the chiral Weyl semimetal RhSi

Weyl semimetals are crystals in which electron bands cross at isolated points in momentum space. Associated with each crossing point (or Weyl node) is a topological invariant known as the Berry monopole charge. The circular photogalvanic effect (CPGE), whereby circular polarized light generates a helicity-dependent photocurrent, is a notable example of a macroscopic property that emerges directly from the topology of the Weyl semimetal band structure. Recently, it was predicted that the amplitude of the CPGE associated with optical transitions near a Weyl node is proportional to its monopole charge. In chiral Weyl systems, nodes of opposite charge are nondegenerate, opening a window of wavelengths where the CPGE resulting from uncompensated Berry charge can emerge. Here, we report measurements of CPGE in the chiral Weyl semimetal RhSi, revealing a CPGE response in an energy window that closes at 0.65 eV, in agreement with the predictions of density functional theory.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of unique band structure of h -BN probed by photocurrent excitation spectroscopy

Here, by employing a photocurrent excitation spectroscopy measurement, a direct bandgap of ~6.46 eV has been resolved for the first time in thick B-10 enriched h-BN films. Together with previous band calculations, an unconventional energy diagram has been constructed to capture the unique features of h-BN: h-BN has a minimum direct bandgap of ~6.5 eV and a bandgap of ~6.1 eV which is indirect with the conduction band minimum (CBM) at M-point and valence band maximum (VBM) at K-point in the Brillouin zone, and the energy levels of the donor and acceptor impurities are measured relative to CBM and VBM, respectively.

42 ENGINEERING↗
NASA NTRS1995

A theoretical analysis of steady-state photocurrents in simple silicon diodes

A theoretical analysis solves for the steady-state photocurrents produced by a given photo-generation rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called 'substrate' below) adjacent to a p-n junction depletion region (DR). Special attention is given to conditions that produce 'funneling' (a term used by the single-eventeffects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage, plus built-in potential normally across the DR, is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. First, it was found that funneling can be induced from a distance, i.e., from carriers generated at locations outside of the DR. Secondly, it was found that the substrate can divide into two subregions, with one controlling substrate resistance and the other characterized by ambipolar diffusion. Finally, funneling was found to be more difficult to induce in the p(sup +)/n diode than in the n(sup +)/p diode. The carrier density exceeding the doping density in the substrate and at the DR boundary is not a sufficient condition to collapse a DR.

Edmonds, L.↗
NASA NTRS1995

A theoretical analysis of steady-state photocurrents in simple silicon diodes.

A theoretical analysis solves for the steady-state photocurrents produced by a given photogeneration rate function with negligible recombination in simple silicon diodes, consisting of a uniformly doped quasi-neutral region (called "substrate" below) between a p-n junction depletion region (DR) and an ohmic contact (electrode). Special attention is given to conditions that produce "funneling" (a term used by the single-event-effects community) under steady-state conditions. Funneling occurs when carriers are generated so fast that the DR becomes flooded and partially or completely collapses. Some or nearly all of the applied voltage plus built-in potential normally across the DR is now across the substrate. This substrate voltage drop affects substrate currents. The steady-state problem can provide some qualitative insights into the more difficult transient problem. Chapter 6 discusses some similarities between the steady-state and transient problems...

Edmonds, Larry↗
DOE OSTI2022

Electrical edge effect induced photocurrent overestimation in low-light organic photovoltaics

In many literatures, the short-circuit current (J SC ) of indoor organic photovoltaics is overestimated, leading to severely wrong device performance evaluation and analysis. In this work, based on the equivalent circuit model, we demonstrate that electrical edge effect is sensitive to both transverse surface resistance and light intensity. At low light intensity, the electrical edge effect could lead to J SC being significantly overestimated, i.e., by 100% and even more. We show that for a PM6:Y6 device capped with a MoOX layer, when measured under 0.01 sun, the usually overlooked interface doping mechanism would lead to J SC and PCE overestimation by 51% and 15%, respectively. Besides, we show that the magnitude of J SC overestimation drastically increases with high photoactive-layer surface roughness. This work emphasized the significant electrical edge effect on J SC evaluations for low-light solar cells and is conducive to understanding the intrinsic mechanism of edge effect, promoting a healthier development of organic photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2024

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Wood, Alexander A.↗
DOE OSTI2021

Photocurrent in carbon nanotube bundle: Graded Seebeck coefficient phenomenon

Here, polarized photovoltage of a suspended aligned carbon nanotube (CNT) bundle under uniform optical irradiation is discovered without additional structural modification or bias voltage. Such a phenomenon is very surprising considering the metallic behavior of the overall bundle and zero temperature difference between ends. The photovoltage characteristic time is found similar to the thermal response time under step Joule heating and implies a relation to the thermal behavior of the CNT bundle. A similar thermoelectric voltage is also observed during step Joule heating. Localized laser heating and scanning along the axial direction of the bundle uncovers a linear spatial variation of the local Seebeck coefficient. The Seebeck coefficient linearly decreases from root to tip of the CNT bundle with a rate of a few - µV∙K –1 ·mm –1 . Deep investigation in both the microscopic and macroscopic structures of the CNT bundle reveals that the local alignment of CNT assemblies rather than the minor defects in individual CNTs brings about this linear distribution of Seebeck coefficient in space. The finding presents a new way for direct photon-to-electric energy conversion via Seebeck coefficient grading in CNT structures.

42 ENGINEERING↗