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Results for “Photocurrent”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Unconventional Photocurrents from Surface Fermi Arcs in Topological Chiral Semimetals

The nonlinear optical responses from topological semimetals are crucial in both understanding the fundamental properties of quantum materials and designing next-generation light sensors or solar cells. However, previous work focused on the optical effects from bulk states only, disregarding the responses from topological surface states. Here, we propose a new surface-only photocurrent response from chiral Fermi arcs. Using the ideal topological chiral semimetal RhSi as a representative, we quantitatively compute the photogalvanic currents from Fermi arcs on different surfaces. By rigorous crystal symmetry analysis, we demonstrate that Fermi arc photogalvanic currents can be perpendicular to the bulk injection currents regardless of the choice of materials surface. We then generalize this finding to other cubic chiral space groups and predict material candidates. Our theory reveals a powerful notion where common crystalline symmetry can be used to completely disentangle bulk and surface optical responses in many conducting material families.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Photocurrent Nanoscopy of Quantum Hall Bulk

Understanding nanoscale electronic and thermal transport of two-dimensional (2D) electron systems in the quantum Hall regime, particularly in the bulk insulating state, poses considerable challenges. One of the primary difficulties arises from the presence of chiral edge channels, whose transport behavior obscures the investigation of the insulating bulk. Using near-field optical and photocurrent nanoscopy, we probe real-space variations of the optical and thermal dynamics of graphene in the quantum Hall regime without relying on complex sample or electrode geometries. Near the charge-neutrality point, we detect strong optical and photothermal signals from resonant inter-Landau-level (LL) magnetoexciton excitations between the zeroth and ± 1 st LLs, which gradually weaken with increasing doping due to Pauli blocking. Interestingly, at higher doping levels and full-integer LL fillings, photothermal signals reappear across the entire sample over an approximately 10 − μ m scale, indicating unexpectedly long cooling lengths and nonlocal photothermal heating through the insulating bulk. This observation suggests that thermal conductivity persists for the localized states even as electronic transport is suppressed—a clear violation of the Wiedemann-Franz law. Our experiments provide novel insights into nanoscale thermal and electronic transport in incompressible 2D gases, highlighting the roles of magnetoexcitons and chiral edge states in the thermo-optoelectric dynamics of the Dirac quantum Hall state. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗
DOE OSTI2020

Helicity-dependent photocurrents in the chiral Weyl semimetal RhSi

Weyl semimetals are crystals in which electron bands cross at isolated points in momentum space. Associated with each crossing point (or Weyl node) is a topological invariant known as the Berry monopole charge. The circular photogalvanic effect (CPGE), whereby circular polarized light generates a helicity-dependent photocurrent, is a notable example of a macroscopic property that emerges directly from the topology of the Weyl semimetal band structure. Recently, it was predicted that the amplitude of the CPGE associated with optical transitions near a Weyl node is proportional to its monopole charge. In chiral Weyl systems, nodes of opposite charge are nondegenerate, opening a window of wavelengths where the CPGE resulting from uncompensated Berry charge can emerge. Here, we report measurements of CPGE in the chiral Weyl semimetal RhSi, revealing a CPGE response in an energy window that closes at 0.65 eV, in agreement with the predictions of density functional theory.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of unique band structure of h -BN probed by photocurrent excitation spectroscopy

Here, by employing a photocurrent excitation spectroscopy measurement, a direct bandgap of ~6.46 eV has been resolved for the first time in thick B-10 enriched h-BN films. Together with previous band calculations, an unconventional energy diagram has been constructed to capture the unique features of h-BN: h-BN has a minimum direct bandgap of ~6.5 eV and a bandgap of ~6.1 eV which is indirect with the conduction band minimum (CBM) at M-point and valence band maximum (VBM) at K-point in the Brillouin zone, and the energy levels of the donor and acceptor impurities are measured relative to CBM and VBM, respectively.

42 ENGINEERING↗
DOE OSTI2022

Electrical edge effect induced photocurrent overestimation in low-light organic photovoltaics

In many literatures, the short-circuit current (J SC ) of indoor organic photovoltaics is overestimated, leading to severely wrong device performance evaluation and analysis. In this work, based on the equivalent circuit model, we demonstrate that electrical edge effect is sensitive to both transverse surface resistance and light intensity. At low light intensity, the electrical edge effect could lead to J SC being significantly overestimated, i.e., by 100% and even more. We show that for a PM6:Y6 device capped with a MoOX layer, when measured under 0.01 sun, the usually overlooked interface doping mechanism would lead to J SC and PCE overestimation by 51% and 15%, respectively. Besides, we show that the magnitude of J SC overestimation drastically increases with high photoactive-layer surface roughness. This work emphasized the significant electrical edge effect on J SC evaluations for low-light solar cells and is conducive to understanding the intrinsic mechanism of edge effect, promoting a healthier development of organic photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2024

3D‐Mapping and Manipulation of Photocurrent in an Optoelectronic Diamond Device

Abstract Establishing connections between material impurities and charge transport properties in emerging electronic and quantum materials, such as wide‐bandgap semiconductors, demands new diagnostic methods tailored to these unique systems. Many such materials host optically‐active defect centers which offer a powerful in situ characterization system, but one that typically relies on the weak spin‐electric field coupling to measure electronic phenomena. In this work, charge‐state sensitive optical microscopy is combined with photoelectric detection of an array of nitrogen‐vacancy (NV) centers to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. Optical control is used to change the charge state of background impurities inside the diamond on‐demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. Conducting channels that control carrier flow, key steps toward optically reconfigurable, wide‐bandgap optoelectronics are then engineered using light. This work might be extended to probe other wide‐bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic and quantum technologies.

Wood, Alexander A.↗
DOE OSTI2021

Photocurrent in carbon nanotube bundle: Graded Seebeck coefficient phenomenon

Here, polarized photovoltage of a suspended aligned carbon nanotube (CNT) bundle under uniform optical irradiation is discovered without additional structural modification or bias voltage. Such a phenomenon is very surprising considering the metallic behavior of the overall bundle and zero temperature difference between ends. The photovoltage characteristic time is found similar to the thermal response time under step Joule heating and implies a relation to the thermal behavior of the CNT bundle. A similar thermoelectric voltage is also observed during step Joule heating. Localized laser heating and scanning along the axial direction of the bundle uncovers a linear spatial variation of the local Seebeck coefficient. The Seebeck coefficient linearly decreases from root to tip of the CNT bundle with a rate of a few - µV∙K –1 ·mm –1 . Deep investigation in both the microscopic and macroscopic structures of the CNT bundle reveals that the local alignment of CNT assemblies rather than the minor defects in individual CNTs brings about this linear distribution of Seebeck coefficient in space. The finding presents a new way for direct photon-to-electric energy conversion via Seebeck coefficient grading in CNT structures.

42 ENGINEERING↗
DOE OSTI2020

Shift photovoltaic current and magnetically induced bulk photocurrent in piezoelectric sillenite crystals

Recently, it has been shown how shift and ballistic currents in piezoelectric sillenite crystals Bi 12 GeO 20 and Bi 12 SiO 20 can be separated experimentally under the assumption that the shift component of the circular current is small. However, it has been claimed that the shift and ballistic currents cannot be quantified by this method, due to the magnetophotovoltaic effect caused either by the change of the crystal's spatial symmetry in the magnetic field or by the breaking of time-reversal symmetry. Presently, we report observations of photovoltaic currents in Bi 12 SiO 20 , excited by linearly and circularly polarized light under weak external magnetic field, as well as measurements of the corresponding photo-Hall signals. Further, we demonstrate that the magnetophotovoltaic current constitutes a significant fraction of the measured current in the Hall direction for Bi 12 SiO 20 under specific experimental conditions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗