Vibrational spectra and structure of biacetyl
Gaseous, liquid and polycrystalline biacetyl vibrational spectra and structure, noting mutual exclusion between IR and Raman radiation
Brown, S. C.↗
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Ultrafast x-ray diffraction of high-pressure phases in dynamically compressed TiO 2
Here, we investigate the high-pressure polymorphism of TiO 2 under laser-shock compression from 54(5) to 137(7) GPa using in situ femtosecond x-ray diffraction. Our results provide experimental evidence of the 𝑃𝑐𝑎2 1 -type distorted fluorite structure formed from polycrystalline TiO 2 dynamically compressed to 54(5) GPa. Upon higher compression, we observe the direct formation of the ninefold coordinated Fe 2 P-type phase at 68(4) and 78(3) GPa in polycrystalline and [001]-oriented TiO 2 , respectively. This represents an unprecedented 100 GPa reduction in the shock synthesis pressure of the Fe 2 P-type structure relative to quasihydrostatic loading conditions. On pressure release, the Fe 2 P-type phase transforms to the α-PbO 2 structure and, at later times, reverts to rutile. Thus, the rutile →Fe 2 P and α-PbO 2 →rutile transformations are both observed to occur on nanosecond timescales. Our results highlight the unique ability of high-strain-rate uniaxial compression to synthesize novel high-pressure phases and also indicate the importance of in situ atomic-level probes in developing pressure-temperature phase diagrams.
Crystal structures↗
Electrical characterization of chemically modified YBa2Cu3O(7-x) surfaces
Results on electrical characterization of YBa2Cu3O(7-x) thin-film surfaces treated with a Br/ethanol chemical etch are presented. Electrical measurements of YBa2Cu3O(7-x)/Au/Nb device structures fabricated using polycrystalline, post-annelaed YBa2Cu3O(7-x) films with Br-etched surfaces, show improvements of approximately one or two orders of magnitude in current densities and resistivities (resistance-area products) relative to unetched devices. The existence of supercurrents in these structures has been confirmed by observation of the ac Josephson effect, and by magnetic field and temperature studies of the critical currents. The Br-etch process has produced 10 x 10 sq micron devices with critical current densities greater than 400 A/sq cm and resistivities as low as 4 x 10 to the -7th ohm/sq cm.
Hunt, B. D.↗
Emerging hierarchical dislocation structures: Insights from scanning electron microscopy-electron backscatter diffraction in situ tensile testing and multifractal analysis
Understanding the evolution of dislocation structures during plastic deformation is critical for predicting the mechanical performance of metallic materials. In this work, we applied in situ scanning electron microscopy/electron backscatter diffraction tensile testing combined with multifractal (MF) analysis to assess deformation-induced dislocation structure evolution in solution-annealed 304 L stainless steel, both in its as-received and neutron-irradiated states (5.4 displacements per atom). The analysis of kernel average misorientation patterns revealed the formation of hierarchical dislocation arrangements that exhibit clear MF scaling behavior. Despite pronounced visual differences between nonirradiated and irradiated specimens—most notably, the appearance of dislocation channels after irradiation—the singularity spectra suggest that both conditions give rise to similar underlying hierarchical structures. MF analysis provides a quantitative measure of the spatial complexity and self-organization of dislocation patterns, highlighting the accelerated emergence and evolution of the dislocation structures in irradiated polycrystalline materials, as well as the limitation of their spatial extent. The findings indicate that irradiation not only modifies microstructure but also alters correlation-driven dislocation organization. More generally, they demonstrate that MF analysis is a powerful tool for probing mesoscale deformation mechanisms.
Dislocation structures↗
Effect of composition and grain size on slow plastic flow properties of NiAl between 1200 and 1400 K
A series of about 15-micron diameter polycrystalline B2 crystal structure NiAl alloys ranging in composition from 43.9 to 52.7 Al (at. pct) have been compression tested at constant velocities in air between 1200 and 1400 K. All materials were fabricated via powder metallurgy techniques with hot extrusion as the densification process. Seven intermediate compositions were produced by blending various amounts of two master heats of prealloyed powder; in addition, a tenth alloy of identical composition, 48.25 Al, as one of the blended materials, was produced from a third master heat. Comparison of the flow stress-strain rate behavior for the two 48.25 Al alloys revealed that their properties were identical. The creep strength of materials for Al/Ni not above 1.03 was essentially equal, and deformation could be described by a single stress exponent and activation energy. Creep at low temperatures and faster strain rates is independent of grain sizes and appears to be controlled by a subgrain mechanism. However, at higher temperatures and slower strain rates, diffusional creep seems to contribute to the overall deformation rate.
Whittenberger, J. Daniel↗
Burning rate and flame structure of cocrystals of CL-20 and a polycrystalline composite crystal of HMX/AP
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Morgan D. Ruesch↗
Microstructural, Chemical and Mechanical Characterization of Polymer-Derived Hi-Nicalon Fibers with Surface Coatings
Room temperature tensile strengths of as-received Hi-Nicalon fibers and those having BN/SiC, p-BN/SiC, and p-B(Si)N/SiC surface coatings, deposited by chemical vapor deposition, were measured using an average fiber diameter of 13.5 microns. The Weibull statistical parameters were determined for each fiber. The average tensile strength of uncoated Hi-Nicalon on was 3.19 +/- 0.73 GPa with a Weibull modulus of 5.41. Strength of fibers coated with BN/SiC did not change. However, coat with p-BN/SiC and p-B(Si)N/SiC surface layers showed strength loss of approx. 10 and 35 percent, respectively, compared with as-received fibers. The elemental compositions of the fibers and the coatings were analyzed using scanning Auger microprobe and energy dispersive x-ray spectroscopy. The BN coating was contaminated with a large concentration of carbon and some oxygen. In contrast, p-BN, p-B(Si)N, and SiC coatings did not show any contamination. Microstructural analyses of the fibers and the coatings were done by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and selected area electron diffraction. Hi-Nicalon fiber consists of the P-SIC nanocrystals ranging in size from 1 to 30 nm embedded in an amorphous matrix. TEM analysis of the BN coating revealed four distinct layers with turbostatic structure. The p-BN layer was turbostratic and showed considerable preferred orientation. The p-B(Si)N was glassy and the silicon and boron were uniformly distributed. The silicon carbide coating was polycrystalline with a columnar structure along the growth direction. The p-B(Si)N/SiC coatings were more uniform, less defective and of better quality than the BN/SiC or the p-BN/SiC coatings.
Bansal, Narottam P.↗
Frustration-driven magnetic correlations in the spin-$\frac{5}{2}$ triangular lattice antiferromagnet RbFe(HPO 3 ) 2
Here, a detailed study of the structural and magnetic properties of a spin-5/2 triangular lattice antiferromagnet RbFe(HPO 3 ) 2 is presented using x-ray diffraction, magnetization, heat capacity, and 31 P nuclear magnetic resonance (NMR) experiments on a polycrystalline sample. The crystal structure features an equilateral triangular lattice of Fe 3+ ions. The thermodynamic measurements reveal the onset of a magnetic long-range order at 𝑇 N1 ≃7.8K in zero field, followed by another low-temperature field-induced ordering at 𝑇 N2 in higher fields. The transition at 𝑇 N1 is further confirmed from the NMR spin lattice relaxation measurements. The value of the frustration ratio (𝑓≃7) implies moderate spin frustration in the compound. The 31 P NMR spectra exhibit two distinct spectral lines corresponding to two inequivalent phosphorus sites (P1 and P2), consistent with the crystal structure. The P1 site is strongly coupled with an isotropic hyperfine coupling of 𝐴$^{iso}_{hf}$ = 0.55(2) T/𝜇 B while the P2 site is weakly coupled with 𝐴$^{iso}_{hf}$ = 0.25(3) T/𝜇 B with the Fe 3+ ions. The magnetic susceptibility and NMR shift data are described well assuming a spin-5/2 isotropic triangular lattice antiferromagnetic model with an average exchange coupling of 𝐽/𝑘 B = 2.8(2)K. Below 𝑇 N1 , the spectra evolve into a nearly rectangular powder pattern, indicating a commensurate antiferromagnetic type order. The 31 P spin-lattice relaxation rate well below 𝑇N1 follows a 𝑇 3 temperature dependence, implying a two-magnon Raman scattering mechanism in the ordered state. Three well-defined phase regimes are clearly ascertained in the 𝐻−𝑇 phase diagram, reflecting a weak magnetic anisotropy in the compound.
Nagpal, V. [Indian Institute of Science Education ↗
Magnetic properties of (Mo 2/3 Dy 1/3 ) 2 AlC arc melted polycrystalline samples
Here, this study investigates the structural and magnetic properties of arc-melted (Mo 2/3 Dy 1/3 ) 2 AlC polycrystalline samples, a member of the i-MAX phase family. Temperature-dependent magnetization and specific heat measurements confirm the low-temperature antiferromagnetic transitions around 14 K and 17 K. Neutron diffraction data collected at 4 K reveal the emergence of magnetic Bragg peaks that are not allowed in the paramagnetic space group C2/c, further confirming the presence of antiferromagnetic ordering. The detection of a secondary phase, DyAl 2 , is complicated by overlapping Bragg peaks with the monoclinic phase of (Mo 2/3 Dy 1/3 ) 2 AlC in powder XRD patterns. However, magnetization and neutron diffraction data suggest the presence of DyAl 2 , evidenced by a ferromagnetic phase transition around 62 K.
36 MATERIALS SCIENCE↗
Recombination-active defects in silicon ribbon and polycrystalline solar cells
This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.
Cheng, L. J.↗
Test Structures For Bumpy Integrated Circuits
Cross-bridge resistors added to comb and serpentine patterns. Improved combination of test structures built into integrated circuit used to evaluate design rules, fabrication processes, and quality of interconnections. Consist of meshing serpentines and combs, and cross bridge. Structures used to make electrical measurements revealing defects in design or fabrication. Combination of test structures includes three comb arrays, two serpentine arrays, and cross bridge. Made of aluminum or polycrystalline silicon, depending on material in integrated-circuit layers evaluated. Aluminum combs and serpentine arrays deposited over steps made by polycrystalline silicon and diffusion layers, while polycrystalline silicon versions of these structures used to cross over steps made by thick oxide layer.
Buehler, Martin G.↗
Ba 4 RuMn 2 O 10 : A Noncentrosymmetric Polar Crystal Structure with Disordered Trimers
Phase-pure polycrystalline Ba 4 RuMn 2 O 10 was prepared and determined to adopt the noncentrosymmetric polar crystal structure (space group Cmc2 1 ) based on results of second harmonic generation, convergent beam electron diffraction, and Rietveld refinements using powder neutron diffraction data. The crystal structure features zigzag chains of corner-shared trimers, which contain three distorted face-sharing octahedra. The three metal sites in the trimers are occupied by disordered Ru/Mn with three different ratios: Ru1:Mn1 = 0.202(8):0.798(8), Ru2:Mn2 = 0.27(1):0.73(1), and Ru3:Mn3 = 0.40(1):0.60(1), successfully lowering the symmetry and inducing the polar crystal structure from the centrosymmetric parent compounds Ba 4 T 3 O 10 (T = Mn, Ru; space group Cmca). The valence state of Ru/Mn is confirmed to be +4 according to X-ray absorption near-edge spectroscopy. Ba 4 RuMn 2 O 10 is a narrow bandgap (~0.6 eV) semiconductor exhibiting spin-glass behavior with strong magnetic frustration and antiferromagnetic interactions.
36 MATERIALS SCIENCE↗
Sn-InAs Nanowire Shadow-Defined Josephson Junctions
Hybrid superconductor–semiconductor platforms are foundational to advancing quantum information technologies, motivating the integration of materials with clean interfaces, robust superconductivity, and scalable architectures. Here, in this work, we report the synthesis and analysis of inclined InAs nanowires, conformally coated with β-Sn shells. These nanowires extend in opposite in-plane directions, forming a self-aligned, criss-cross network. This enables the deterministic formation of nanowire-shadow Josephson junctions through angle-controlled, low-temperature Sn deposition. Structural characterization shows uniform polycrystalline β-Sn shells forming a sharp, diffusion-free interface with InAs. Low-temperature transport measurements reveal a hard induced superconducting gap ≈ 600 μeV, switching currents up to ≈ 500 nA, and parallel magnetic field resilience beyond 1T. These results establish β-Sn/InAs nanowire networks as a promising platform for superconducting qubits, low-noise microwave devices, and the exploration of exotic superconducting phases including triplet pairing and topological superconductivity.
B-Sn↗
Research on low density thermal insulation materials for use above 3000 deg f fourth quarterly status report, oct. 1 - dec. 31, 1964
Zirconium oxide polycrystalline fibers for improving structural rigidity and thermal insulation of zirconium oxide foam
ZIRCONIUM OXIDE↗
GBOpt: Grain boundary structure optimization using Monte Carlo and evolutionary algorithms
Polycrystalline materials are made of many small crystals separated by grain boundaries (GBs), whose atomic structure strongly influences material properties. Because the structure of a GB determines its properties, the optimal structure must be known in order to determine those impacts. There are many ways of placing atoms in the GB region, but the optimal structure is defined as the one that gives the lowest value of a target property (typically energy). GB structure optimization has been successfully demonstrated using stochastic and evolutionary methods, but no reusable, community-maintained open-source workflow has been developed. GBOpt (Grain Boundary Optimization) is an open-source Python package that creates that workflow, where we have presently implemented two approaches: Markov Chain Monte Carlo, and genetic algorithm based on elite selection. We demonstrate this capability by successfully reproducing the known optimal structures of a specific GB in two materials, and point interested readers to the GitHub repository for additional examples, including optimization for different properties. Both of the implemented approaches recovered the known structures, with the genetic algorithm approach finding the optimal structure faster on average.
99 - GENERAL AND MISCELLANEOUS↗
Effect of copper impurity on polycrystalline silicon solar cells
The presence of copper impurity, up to 10 to the 15th atoms/cc, in single crystal silicon has been shown to have no deleterious effect on the p-n junction solar cell performance. However, in polycrystalline silicon, copper atoms tend to migrate to the defect sites because of the structural sensitive properties of copper. This study was undertaken to investigate the influence of this behavior of copper impurity on the performance of p-n junction solar cells fabricated from structurally imperfect silicon. Two sets of polycrystalline silicon substrates containing copper were examined. In one set of samples, copper was incorporated during growth, whereas in the other, copper was diffused. Solar cells were fabricated on both the sets of substrates by a standard process. Dark and light I-V and spectral response characteristics of the cells were measured and compared with copper-free polycrystalline silicon solar cells. The results and the model are discussed.
Daud, T.↗
MEMS Reliability Assurance Activities at JPL
An overview of Microelectromechanical Systems (MEMS) reliability assurance and qualification activities at JPL is presented along with the a discussion of characterization of MEMS structures implemented on single crystal silicon, polycrystalline silicon, CMOS, and LIGA processes. Additionally, common failure modes and mechanisms affecting MEMS structures, including radiation effects, are discussed. Common reliability and qualification practices contained in the MEMS Reliability Assurance Guideline are also presented.
Kayali, S.↗
The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers
A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.
Buehler, M. G.↗