A COMPACT, LOW POWER DEVICE USING MIE RESONANCE FOR MULTISPECTRAL POLARIZATION IMAGE DETECTION FINAL REPORT
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47 OTHER INSTRUMENTATION↗
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Picosecond magneto-optic thermometry measurements of nanoscale thermal transport in AlN thin films
The thermal conductivity Λ of wide bandgap semiconductor thin films, such as AlN, affects the performance of high-frequency devices, power devices, and optoelectronics. However, accurate measurements of Λ in thin films with sub-micrometer thicknesses and Λ > 100 W m -1 K -1 is challenging. Widely used pump/probe metrologies, such as time–domain thermoreflectance (TDTR) and frequency–domain thermoreflectance, lack the spatiotemporal resolution necessary to accurately quantify thermal properties of sub-micrometer thin films with high Λ. In this work, we use a combination of magneto-optic thermometry and TiN interfacial layers to significantly enhance the spatiotemporal resolution of pump/probe thermal transport measurements. We use our approach to measure Λ of 100, 400, and 1000 nm AlN thin films. We coat AlN thin films with a ferromagnetic thin-film transducer with the geometry of (1 nm-Pt/0.4 nm-Co) x3 /(2 nm-TiN). This PtCo/TiN transducer has a fast thermal response time of <50 ps, which allows us to differentiate between the thermal response of the transducer, AlN thin film, and substrate. For the 100, 400, and 1000 nm thick AlN films, we determine Λ to be 200 ± 80, 165 ± 35, and 300 ± 70 W m -1 K -1 , respectively. We conclude with an uncertainty analysis that quantifies the errors associated with pump/probe measurements of thermal conductivity, as a function of transducer type, thin-film thermal conductivity, and thin-film thickness. Time resolved magneto-optic Kerr effect experiments can measure films that are three to five times thinner than is possible with standard pump/probe metrologies, such as TDTR. This advance in metrology will enable better characterization of nanoscale heat transfer in high thermal conductivity material systems like wide bandgap semiconductor heterostructures and devices.
36 MATERIALS SCIENCE↗
Power converter circuitry for photovoltaic devices
Power converter circuitry includes a direct current (DC) input comprising a first DC input node and a second DC input node, an alternating current (AC) output comprising a first AC output node coupled to the first DC input node and a second AC output node, a first boost switch coupled between the second DC input node and a boost intermediate node, a second boost switch coupled between the boost intermediate node and a common node, a boost inductor coupled between the boost intermediate node and the first DC input node, a link capacitor coupled between the second DC input node and the common node, a first half-bridge switch coupled between the second DC input node and a half-bridge intermediate node, a second half-bridge switch coupled between the half-bridge intermediate node and the common node, and a half-bridge inductor coupled between the half-bridge intermediate node and the second AC output node.
Ayyanar, Rajapandian↗
Thermal Stress Reduction in Power Switching Devices Using Distributed Loss PWM Concept for Current Source Inverters
A new modulation scheme is proposed for current source inverters (CSIs) that reduces the variation and peak junction temperature in the CSIs' power devices. The distributed loss pulse-width modulation (DLM) concept is introduced and applied to traditional space vector modulation methods to develop modified modulation schemes that reduce the thermal stress on power devices. The device junction temperatures resulting from conventional and DLM schemes are compared. Simulation and experimental results confirm that the proposed DLM concept reduces thermal stress on the devices while maintaining the same high output current waveform quality compared to traditional CSI modulation schemes. The CSI power device lifetime (i.e., the number of cycles to failure) are estimated using the simulation and experimental results. The proposed DLM significantly increases the device lifetime (by 5 to 6 times) by reducing the junction temperature variation compared to the conventional modulations.
42 ENGINEERING↗
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
The development of gallium nitride (GaN) power devices requires a reliable selective-area doping process, which is difficult to achieve because of ongoing challenges associated with the required etch-then-regrow process. The presence of silicon (Si) impurities of unclear physical origin at the GaN regrowth interface has proven to be a major bottleneck. Furthermore, this paper investigates the origin of Si contamination at the epitaxial GaN-on-GaN interface and demonstrates an approach that markedly reduces its impact on device performance. An optimized dry-etching approach combined with UV-ozone and chemical etching is shown to greatly reduce the Si concentration levels at the regrowth interface, and a significant improvement in a reverse leakage current in vertical GaN-based p–n diodes is achieved.
36 MATERIALS SCIENCE↗
Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotr
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Liu, Yafei↗
Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter
Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.
42 ENGINEERING↗
Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions
Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.
24 POWER TRANSMISSION AND DISTRIBUTION↗
Open-Source Architecture for Multi-Party Update Verification for Data Acquisition Devices
Power grids are integral parts of modern daily life and are increasingly under cyberattack. Common software update processes for grid control devices rely on only one organization to provide verification. This paper roposes a multi-signature software update process to help better secure data acquisition devices from malicious actions by using standard cryptosystems such as TLS. A prototype system build on Linux and off-the-shelf hardware has shown successful update and attack prevention with our customized multi-party update software.
Newberg, Benjamin↗
Characterization of Highly Thermally Conductive Organic Substrates for a Double-Sided Cooled Power Module
Abstract Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This study proposes a cost-effective double-sided cooled (DSC) 1.2 kV SiC half-bridge power module using organic epoxy-resin composite dielectric (ERCD) substrates. The high mechanical and thermal performance of the power module is achieved by the low-modulus, moderate thermal conductivity, and relatively thin (120 μm) layer of ERCD material compared with traditional metal-clad ceramic approaches. This novel organic dielectric can withstand high voltage (5 kV @ 120 μm) and operate up to 250°C continuously, which is indispensable for high power applications. The thermal modeling results show that the equivalent thermal resistance junction-to-case (Rjc_eq) of the DSC power module using dual direct bonded copper (DBC) is 17% higher than the dual ERCD configuration. Furthermore, a non-insulated DSC power module concept is proposed for maximizing thermal performance by considering thermal vias in the ERCD substrate and direct-soldered heat sink. A thought process for optimization of thermal via design is demonstrated and it shows up to 24% of improvement on thermal performance compared with the insulated DSC power module.
Double-sided cooling, epoxy-resin composite dielec↗
Real-time Condition Monitoring of Power Modules in Grid-tied Power Converter
This paper proposes and demonstrates a real-time condition monitoring method using gate driver integrated sensing circuits and sensor fusion algorithms. Power device on-state voltage (VDSon) measurement and junction temperature (Tj) sensing circuits with high noise immunity are built and integrated into an adaptive gate driver circuit for power modules. Considering the inherently noisy measurement environment of power converters, VDSon together with several other measurements are fused together to provide accurate descriptions of the stress and degradation of each power device. Furthermore, the gate driver circuit can actively control the turn-on gate voltage (VGSon) for each device based on the stress and degradation state. The proposed sensing circuits and power device condition assessment algorithms are implemented in a 75 KVA grid-tied power converter. This paper focuses on the sensing circuits hardware designs and testing in grid-tied power converter prototype and device stress index generation. More comprehensive results on the device state of health index generation will be presented in future work.
Fan, Junchong↗
Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules
The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.
42 ENGINEERING↗
Equipment Assessment Guide: A Technical Inspection and Hardening Guide for Devices in Power Grid Operations
This Equipment Assessment Guide, developed by Idaho National Laboratory (INL), provides a comprehensive framework designed to enhance the security of operational technology (OT) devices within power grid operations. The guide outlines essential steps for asset owners to conduct technical inspections and harden vulnerable hardware and firmware components commonly found in embedded systems. It focuses on components frequently targeted by cyber threats, offering valuable identification techniques for locating and recognizing critical components on devices. Additionally, the guide presents recommended secure configurations aimed at minimizing exposure and reinforcing defenses, along with impact analysis that highlights the potential consequences for grid operations if components are compromised. By implementing the recommendations outlined in this guide, asset owners can significantly enhance their cybersecurity posture, reduce the attack surface of field-deployed devices, and improve the resilience of grid services against emerging cyber threats.
42 - ENGINEERING↗
Electrothermal Modeling and Analysis of Gallium Oxide Power Switching Devices: Preprint
Gallium oxide is an emerging wide band-gap material that has the potential to penetrate the power electronics market in the near future. In this paper, a finite-element gallium oxide semiconductor model is presented that can predict the electrical and thermal characteristics of the device. The finite element model of the two-dimensional device architecture is developed inside the Sentaurus environment. A vertical FinFET device architecture is employed to assess the device's behavior and its static and dynamic behavior. Enhancement-mode device operation is realized with this type of device architecture without the need for any selective area doping. The dynamic thermal behavior of the device is characterized through its short-circuit behavior. Based on the device static and dynamic behavior, it is envisioned that reliable vertical transistors can be fabricated for the power electronics applications.
33 ADVANCED PROPULSION SYSTEMS↗
Impact assessment of geomagnetic induced current neutral blocking devices with power electronics sources on distance relay for 230 kV transmission lines
Electrical grids increased the integration of power electronics sources onto transmission lines. In addition, recent reports show a significant rise in geomagnetic storms occurring in 2024. These geomagnetic storms can affect transmission lines by inducing electrical currents within them, potentially causing power outages due to overloaded power transformers. Geomagnetic induced current neutral blocking devices (GIC-NBDs) are capacitors on the ground of wye power transformers, to avoid damage caused by geomagnetic storms. The integration of distance relays and transmission lines with power electronics sources and GIC-NBDs needs to be studied to observe if GIC-NBDs and power electronics sources could adversely affect operation of the electrical grid. In this analysis, the effect of 2 MW power electronics sources and GIC-NBDs on distance relays is assessed for different 230 kV transmission line lengths in radial and nonradial power systems. The simulations measured the apparent impedances, with different electrical faults. Results for a typical 2,650 μF GIC-NBD application were presented on impedance plots, and the distance relay model operations were assessed. In conclusion, the tests for radial and nonradial power systems showed the behavior of the distance elements and source impedance ratios, assessing the effect of power electronics sources and GIC-NBDs on 230 kV transmission lines.
Distance relays↗
A Power Takeoff Device for a Small Marine Hydrokinetic Turbine Deployed from an Unmanned Floating Platform
The design, development, and field-testing of a power takeoff (PTO) device equipped with a ball-type continuously-variable transmission (B-CVT) for a small marine hydrokinetic (MHK) turbine deployed from a floating unmanned autonomous mobile catamaran platform is described. The turbine is a partially-submerged multi-blade undershot waterwheel (USWW). The objective is to develop a PTO for the optimal conversion of the MHK energy harnessed by the turbine to electric power, which is stored in battery banks onboard the MHK platform. Modeling, simulation, and bench testing of the USWW and PTO show the feasibility of utilizing the B-CVT's variable gear ratio to decouple the USWW and generator speeds, maintaining the waterwheel within its optimal tip speed ratio (TSR) while varying the generator speed, thereby increasing the efficiency of the PTO. Results of bench and field testing in support of characterizing the power conversion capabilities of the PTO are described. The system being developed is in support of potential self-powered autonomous mobile recharge stations for unmanned aerial vehicles (U A V s) operating in coastal zones. Field tests of the complete MHK platform with 9 blades on the waterwheel and wheel sub mergences of 10 and 12 inches (full blade submergence) were performed. The overall proof-of-concept was successfully demonstrated, with the system satisfactorily capturing and converting water flow energy into electricity. The feasibility of utilizing the B-CVT as a means of increasing the PTO power capture capabilities and efficiency is analyzed.
Pimentel, Hugo↗
Chemical manipulation of hydrogen induced high p-type and n-type conductivity in Ga 2 O 3
Advancement of optoelectronic and high-power devices is tied to the development of wide band gap materials with excellent transport properties. However, bipolar doping (n-type and p-type doping) and realizing high carrier density while maintaining good mobility have been big challenges in wide band gap materials. Here P-type and n-type conductivity was introduced in β-Ga 2 O 3 , an ultra-wide band gap oxide, by controlling hydrogen incorporation in the lattice without further doping. Hydrogen induced a 9-order of magnitude increase of n-type conductivity with donor ionization energy of 20 meV and resistivity of 10 -4 Ω.cm. The conductivity was switched to p-type with acceptor ionization energy of 42 meV by altering hydrogen incorporation in the lattice. Density functional theory calculations were used to examine hydrogen location in the Ga 2 O 3 lattice and identified a new donor type as the source of this remarkable n-type conductivity. Positron annihilation spectroscopy measurements confirm this finding and the interpretation of the experimental results. This work illustrates a new approach that allows a tunable and reversible way of modifying the conductivity of semiconductors and it is expected to have profound implications on semiconductor field. At the same time, it demonstrates for the first time p-type and remarkable n-type conductivity in Ga 2 O 3 which should usher in the development of Ga 2 O 3 devices and advance optoelectronics and high-power devices.
36 MATERIALS SCIENCE↗
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys
Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting numerous structural phases with unique optoelectronic properties that make them attractive candidates as ultra-wide bandgap (UWBG) semiconductors for next-generation power devices. Here we review the properties of AGO, focusing on theoretical results on the thermodynamics of Al incorporation and its consequences on the electronic structure. We review predictions and progress in experimentally realizing these alloys, as well as how composition influences important optoelectronic variables such as the band gap, band offsets, transport properties, and n-type dopability. A number of these parameters, such as the breakdown field (related to the band gap) and electron mobility, are discussed in assessing AGO in terms of relevant power device figures of merit. Altogether, the rapid progress and predicted properties highlight the promise of AGO as a model UWBG semiconductor platform with the potential to revolutionize power devices.
36 MATERIALS SCIENCE↗