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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

A nonlinear interface integrated lever mechanism for piezoelectric footstep energy harvesting

Harnessing footstep energy allows for a unique method of power generation from a largely untapped resource, with applications such as instantly charging mobile and wearable electronic devices. This letter presents an easily integrated heel charger to efficiently convert kinematic walking energy into electricity. The heel charger uses a multilayered levered piezoelectric (L-Pie) mechanism associated with a nonlinear mechanical-synchronized switching on inductor circuit (M-SSHI) interface. It tactfully switches on when the foot contacts the ground, and switches off when the foot is lifted. This design takes full advantage of the user's weight, and amplifies footstep displacement by utilizing the lever mechanism to gain maximum deformation of multilayer piezoelectric patches. The experimental results show that the fabricated two-level multilayer L-pie has a top performance of 13.60 mW of AC RMS, a mechanical to AC power conversion efficiency of 7.87%, and a DC RMS power of 6.13 mW, an AC to DC power conversion efficiency of 45.07%, under a harmonic excitation of 2.3 Hz (mimicking fast walking speed: 6.2 km/h for men, 5.55 km/h for women). With an optimal load of 210 kΩ, the two-level L-pie using the M-SSHI has an improvement of 206.45% in DC RMS power compared to a standard 4-diode bridge energy harvesting circuit. Finally, the L-pie design works more efficiently under large force excitation, even with small displacement, which makes this technology optimal for footstep energy harvesting.

42 ENGINEERING↗
DOE OSTI2016

Light-trapping and recycling for extraordinary power conversion in ultra-thin gallium-arsenide solar cells

Here, we demonstrate nearly 30% power conversion efficiency in ultra-thin (~200 nm) gallium arsenide photonic crystal solar cells by numerical solution of the coupled electromagnetic Maxwell and semiconductor drift-diffusion equations. Our architecture enables wave-interference-induced solar light trapping in the wavelength range from 300-865 nm, leading to absorption of almost 90% of incoming sunlight. Our optimized design for 200 nm equivalent bulk thickness of GaAs, is a square-lattice, slanted conical-pore photonic crystal (lattice constant 550 nm, pore diameter 600 nm, and pore depth 290 nm), passivated with AlGaAs, deposited on a silver back-reflector, with ITO upper contact and encapsulated with SiO 2 . Our model includes both radiative and non-radiative recombination of photo-generated charge carriers. When all light from radiative recombination is assumed to escape the structure, a maximum achievable photocurrent density (MAPD) of 27.6 mA/cm 2 is obtained from normally incident AM 1.5 sunlight. For a surface non-radiative recombination velocity of 10 3 cm/s, this corresponds to a solar power conversion efficiency of 28.3%. When all light from radiative recombination is trapped and reabsorbed (complete photon recycling) the power conversion efficiency increases to 29%. If the surface recombination velocity is reduced to 10 cm/sec, photon recycling is much more effective and the power conversion efficiency reaches 30.6%.

14 SOLAR ENERGY↗
DOE OSTI2023

The Role of SnO2 Processing on Ionic Distribution in Double-Cation-Double Halide Perovskites

Moving toward a future of efficient, accessible, and less carbon-reliant energy devices has been at the forefront of energy research innovations for the past 30 years. Metal-halide perovskite (MHP) thin films have gained significant attention due to their flexibility of device applications and tunable capabilities for improving power conversion efficiency. Serving as a gateway to optimize device performance, consideration must be given to chemical synthesis processing techniques. Therefore, how does common substrate processing techniques influence the behavior of MHP phenomena such as ion migration and strain? Here, we demonstrate how a hybrid approach of chemical bath deposition (CBD) and nanoparticle SnO2 substrate processing significantly improves the performance of (FAPbI3)0.97(MAPbBr3)0.03 by reducing micro-strain in the SnO2 lattice, allowing distribution of K+ from K-Cl treatment of substrates to passivate defects formed at the interface and produce higher current in light and dark environments. X-ray diffraction reveals differences in lattice strain behavior with respect to SnO2 substrate processing methods. Through use of conductive atomic force microscopy (c-AFM), conductivity is measured spatially with MHP morphology, showing higher generation of current in both light and dark conditions for films with hybrid processing. Additionally, time-of-flight secondary ionization mass spectrometry (ToF-SIMS) observed the distribution of K+ at the perovskite/SnO2 interface, indicating K+ passivation of defects to improve the power conversion efficiency (PCE) and device stability. We show how understanding the role of ion distribution at the SnO2 and perovskite interface can help reduce the creating of defects and promote a more efficient MHP device.

conductive atomic force microscopy↗
DOE OSTI2022

Significant improvement of conversion efficiency by passivation of low-angle grain boundaries in flexible low-cost single-crystal-like GaAs thin-film solar cells directly deposited on metal tape

We develop an easily implementable yet effective process to achieve high power conversion efficiency in newly-developed flexible single-crystal-like GaAs thin-film photovoltaic solar cells on cheap metal tape. We study various techniques on the fabricated devices to passivate the defect states associated with dangling bonds at low-angle grain boundaries (LA-GBs) existing in the single-crystal-like GaAs material. We report that sulfur by trioctylphosphine sulfide (TOP:S) solution treatment can partially but effectively passivate the defect states at the LA-GBs to increase all the solar cell performance parameters of open-circuit voltage VOC (33.2%), short-circuit current JSC (19.5%), and fill factor FF (25.8%), resulting in the improvement of the power conversion efficiency more than double. The material and device characterizations and numerical modeling are performed to propose a mechanism, also suggesting that the power conversion efficiency higher than 20%, which is an important target milestone in emerging solar cell technologies, can be achieved. This work presents the first effective passivation of the bulk defects in GaAs at the device level and can also offer a solution for other photonic and electronic devices using non-single-crystalline GaAs films for flexible electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Theoretical limits of multiple exciton generation and singlet fission tandem devices for solar water splitting

Photoelectrochemical (PEC) water splitting is one of the most important approaches being investigated for solar fuel generation. In this study, we determine the maximum thermodynamic power conversion efficiencies (PCEs) of PEC water splitting two-bandgap tandem devices that produce multiple carriers per photon absorbed via Multiple Exciton Generation (MEG) or Singlet Fission (SF) and in the presence of solar concentration. Here, we employ a detailed balance thermodynamic analysis to determine the effects of top cell thickness, solar concentration, carrier multiplication, electrode overvoltage (VO), and water absorption on PEC power conversion efficiency for water splitting cells. We have found a maximum PEC power conversion efficiency of 62.9% in cells using two ideal tandem MEG absorbers with bandgaps of 0.3 and 1.2 eV at 1000-suns solar concentration and 0 overvoltage; the maximum PCE for two tandem SF absorbers under the same conditions is nearly the same at 59% with the same values for the absorption thresholds. A very interesting and important result was that, upon thinning the top cell, the range of viable bandgaps for both the top and bottom cells is extended by as much as 0.5-1 eV while still maintaining high maximum conversion efficiency (60-63%). The effects of imposing different solar concentrations from 1X to 1000X and having different tandem configurations of SF and MEG layers were also studied.

14 SOLAR ENERGY↗
DOE OSTI2018

Perovskite Quantum Dots. A New Absorber for Perovskite-Perovskite Tandem Solar Cells

The nanoscale properties of CsPbI 3 quantum dots allows for the advantageous manipulation of its phase diagram. We show that these all-inorganic halide perovskite nanocrystals can be used to fabricate colloidal perovskite quantum dot solar cells with low voltage losses. Despite only recently emerging on the photovoltaic scene, CsPbI 3 quantum dot solar cells have already achieved approximately 85% of their Shockley-Quessier limit open-circuit voltage, among the lowest voltage loss achieved for any material with a band gap of 1.7 eV, excepting III-V semiconductors. The low losses in these devices recently led to a world record certified quantum dot solar cell efficiency of 13.4%. While single junction thin film perovskite solar cells have surpassed 22% power conversion efficiency, perovskite-perovskite tandem solar cells offer the potential for power conversion efficiencies exceeding 30%. However, to accomplish this ambitious goal, perovskite solar cells must be designed with low losses and the appropriate band gaps, which differ from the ideal band gap for single junction perovskite solar cells. In this respect, the incredibly low voltage loss and tunable band gap of CsPbI 3 quantum dots make them ideally suited for all-perovskite tandem solar cell applications.

14 SOLAR ENERGY↗
DOE OSTI2018

Perovskite Quantum Dots: A New Absorber for Perovskite-Perovskite Tandem Solar Cells: Preprint

The nanoscale phase stabilization of CsPbI3 quantum dots allows for the advantageous manipulation of its phase diagram. We show that these all inorganic halide perovskite nanocrystals can be used to fabricate colloidal perovskite quantum dot solar cells with incredibly low voltage losses. Despite recently emerging on the photovoltaic scene, CsPbI3 quantum dot solar cells have already achieved approximately 85% of their Shockley-Quessier limit open-circuit voltage, among the lowest voltage loss achieved for any material with a band gap of 1.7 eV, excepting III-V semiconductors. The low losses in these devices recently led to a world record certified quantum dot solar cell efficiency of 13.4%. While single junction thin film perovskite solar cells have surpassed 22% power conversion efficiency, perovskite-perovskite tandem solar cells offer the potential for power conversion efficiencies exceeding 30%. However, to accomplish this ambitious goal, perovskite solar cells must be designed with incredibly low losses and the appropriate band gaps, which differ from the ideal band gap for single junction perovskite solar cells. In this respect, the incredibly low voltage loss and tunable band gap of CsPbI3 quantum dots make them ideally suited for all-perovskite tandem solar cell applications.

14 SOLAR ENERGY↗
DOE OSTI2017

Pyrite Iron Sulfide Solar Cells Made from Solution Final Technical Report

This document summarizes research done under the SunShot Next Generation PV II project entitled, “Pyrite Iron Sulfide Solar Cells Made from Solution,” award number DE-EE0005324, at the University of California, Irvine, from 9/1/11 thru 11/30/16. The project goal was to develop iron pyrite (cubic FeS 2 ) as an absorber layer for solution-processible p-n heterojunction solar cells with a pathway to >20% power conversion efficiency. Project milestones centered around seven main Tasks: (1) make device-quality pyrite thin-films from solar ink; (2) develop an ohmic bottom contact with suitable low resistivity; (3) produce a p-n heterojunction with VOC > 400 mV; (4) make a solar cell with >5% power conversion efficiency; (5) use alloying to increase the pyrite band gap to ~1.2-1.4 eV; (6) produce a p-n heterojunction with VOC > 500 mV; and finally (7) make a solar cell with >10% power conversion efficiency. In response to project findings, the Tasks were amended midway through the project to focus particular effort on passivating the surface of pyrite in order to eliminate excessively-strong surface band bending believed to be responsible for the low VOC of pyrite diodes. Major project achievements include: (1) development and detailed characterization of several new solution syntheses of high-quality thin-film pyrite, including two “molecular ink” routes; (2) demonstration of Mo/MoS 2 bilayers as good ohmic bottom contacts to pyrite films; (3) fabrication of pyrite diodes with a glass/Mo/MoS 2 /pyrite/ZnS/ZnO/AZO layer sequence that show VOC values >400 mV and as high as 610 mV at ~1 sun illumination, although these high VOC values ultimately proved irreproducible; (4) established that ZnS is a promising n-type junction partner for pyrite; (5) used density functional theory to show that the band gap of pyrite can be increased from ~1.0 to a more optimal 1.2-1.3 eV by alloying with oxygen; (6) through extensive measurements of ultrahigh-purity pyrite single crystals, proved the existence of a conductive, hole-rich inversion layer at the surface of n-type pyrite crystals and established that the inversion layer is the likely reason for pyrite’s low VOC; (7) developed several surface passivation treatments to reduce the surface hole density, but not enough to expect a significant increase in VOC; (8) by controlling the single crystal growth conditions, reduced the concentration of near-surface deep donors by a factor of ~1000, which should be sufficient to avoid thermionic field emission (i.e., tunneling) across the pyrite surface and thereby increase pyrite VOC. Recent project results will be described in forthcoming peer-reviewed publications.

14 SOLAR ENERGY↗
DOE OSTI2023

Conversion efficiency improvement of ELO GaAs solar cell, deposited on water soluble sacrificial buffer

Here, we demonstrate the improvement of power conversion efficiency of an epitaxially-lifted-off single junction GaAs solar cell deposited on a water-soluble sacrificial buffer architecture by introducing an additional germanium (Ge) interlayer between GaAs and the fluoride buffer. The epitaxial lift-off (ELO) technique has been extensively used to separate III-V device layers from their single crystal GaAs substrates. However, conventional ELO requires the use of concentrated hydrofluoric acid (HF) for extended times to etch out the sacrificial layer, subsequently degrading the surface roughness of the parent wafer. As a result, the wafer has to undergo expensive and intensive chemical mechanical polishing (CMP) processes, costing about 25% of a pristine 6-inch GaAs substrate. In our previous work, we demonstrated a method to eliminating the need for CMP post-processing by using water-assisted ELO (H 2 O-ELO). A water-soluble, 3-layer buffer architecture was developed using alkaline earth compounds. However, devices suffered low performance due to a high defect density in the GaAs active layers. A Ge interlayer was introduced to provide a more favorable surface energy for GaAs growth, which leads to an improvement of GaAs crystal quality. The Ge deposition conditions were optimized to achieve a high-quality Ge layer on triple-layer fluoride buffer. Single junction GaAs devices fabricated on Ge/(Ca,Sr)F 2 /BaF 2 /(Ca,Sr)F 2 showed improvement of solar cell performance parameters featuring increases in V oc by 23.7%, and fill factor (F.F.) by 4.9%, which results in an overall improvement of power conversion efficiency from 10.3% to 12.69%.

14 SOLAR ENERGY↗
DOE OSTI2022

Intermediate-phase engineering via dimethylammonium cation additive for stable perovskite solar cells

Achieving the long-term stability of perovskite solar cells is arguably the most important challenge required to enable widespread commercialization. Understanding the perovskite crystallization process and its direct impact on device stability is critical to achieving this goal. The commonly employed dimethyl-formamide/dimethyl-sulfoxide solvent preparation method results in a poor crystal quality and microstructure of the polycrystalline perovskite films. In this work, we introduce a high-temperature dimethyl-sulfoxide-free processing method that utilizes dimethylammonium chloride as an additive to control the perovskite intermediate precursor phases. By controlling the crystallization sequence, we tune the grain size, texturing, orientation (corner-up versus face-up) and crystallinity of the formamidinium (FA)/caesium (FA) y Cs 1-y Pb(I x Br 1-x )3 perovskite system. A population of encapsulated devices showed improved operational stability, with a median T80 lifetime (the time over which the device power conversion efficiency decreases to 80% of its initial value) for the steady-state power conversion efficiency of 1,190 hours, and a champion device showed a T80 of 1,410 hours, under simulated sunlight at 65 degrees C in air, under open-circuit conditions. In conclusion, this work highlights the importance of material quality in achieving the long-term operational stability of perovskite optoelectronic devices.

14 SOLAR ENERGY↗
DOE OSTI2018

Beyond Fullerenes: Indacenodithiophene-Based Organic Charge-Transport Layer toward Upscaling of Low-Cost Perovskite Solar Cells

Phenyl-C 61 -butyric acid methyl ester (PCBM) is universally used as the electron-transport layer (ETL) in the low-cost inverted planar structure of perovskite solar cells (PeSCs). PCBM brings tremendous challenges in upscaling of PeSCs using industry-relevant methods due to its aggregation behavior, which undermines the power conversion efficiency and stability. Herein, we highlight these, seldom reported, challenges with PCBM. Moreoever, we investigate the potential of nonfullerene indacenodithiophene (IDT)-based molecules by employing a commercially available variant, 3,9- bis(2-methylene-(3-(1,1-dicyanomethylene)-indanone))- 5,5,11,11-tetrakis(4-hexylphenyl)-dithieno[2,3-d:2',3'-d']-s-indaceno[1,2-b:5,6-b'] dithiophene (ITIC), as a PCBM replacement in ambient-processed PeSCs. Films fabrication by laboratory-based spin-coating and industry-relevant slot-die coating methods are compared. While similar power-conversion efficiencies are achieved with both types of ETL in a simple device structure fabricated by spin-coating, the nanofibriller morphology of ITIC compared to the aggregated morphology of PCBM films enables improved mechanical integrity and stability of ITIC devices. Upon slot-die coating, the aggregation of PCBM is exacerbated, leading to significantly lower power-conversion efficiency of devices than spin-coated PCBM as well as slot-diecoated ITIC devices. Our findings clearly suggest that IDT-based molecules have great potential as an ETL in PeSCs, offering superior properties and upscaling compatibility than PCBM. Thus, we present a short summary of recently emerged nonfullerene IDT-based molecules from the field of organic solar cells and discuss their scope in PeSCs as electron or holetransport layer.

42 ENGINEERING↗
DOE OSTI2022

Carbazole-Based Hole Transport Polymer for Methylammonium-Free Tin-Lead Perovskite Solar Cells with Enhanced Efficiency and Stability

As the most commonly used hole transport material (HTM) in tin-lead (Sn-Pb) perovskite solar cells (PSCs), poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) limits the power conversion efficiency (PCE) and stability of the PSCs due to its acidic characteristics. Herein, an easily synthesized polymer HTM poly[(phenyl)imino[9-(2-ethylhexyl)carbazole]-2,7-diyl] (CzAn) with a shallow highest occupied molecular orbital (HOMO) level of -4.95 eV is used in a p-i-n structure, methylammonium-free, Sn-Pb PSC to replace PEDOT:PSS. Upon optimization using doping and surface engineering, high quality Sn-Pb PSCs could be successfully fabricated, boosting the PCE to 22.6% (stabilized PCE of 21.3%) compared with 21.2% for PEDOT:PSS. The perovskite films prepared on the modified CzAn HTM possess improved crystallinity, reduced trap-state density, and larger carrier mobility resulting in PSCs with greatly improved stability.

carrier mobility↗
DOE OSTI2021

Perovskite on Silicon Tandem Solar Cells

Since installing solar panels costs more than the panels themselves, it is critically important to improve the efficiency of the panels so that fewer panels need to be installed. More than 90% of all panels being manufactured are made with silicon solar cells. The most promising approach to reach 27% is to upgrade the panels by adding a second set of cells with a larger band gap that can harvest the higher energy photons in the visible spectrum and generate a higher voltage than silicon is capable of generating. Perovskite semiconductors are very promising for low-cost tandems because they have high band gaps, can be rapidly printed from solutions and have been used to make 25% efficient cells by themselves. If we show that it is possible to make stable tandems with 30% efficiency using materials that could be deposited at low cost and that the energy yield will not be compromised, then private companies would be able to raise the capital needed to manufacture this technology. The main metrics for this project are the power conversion efficiency of a lab-scale perovskite/silicon tandem and the ability to maintain a high power conversion efficiency in perovskite solar cells after accelerated operational stability testing under maximum power point at elevated temperature and 1 sun illumination. In short, this project demonstrates improvements to the perovskite absorber layer, contacts for the perovskite solar cell, and transparent oxide layers for window electrodes to achieve tandem efficiencies of 25% after one year and 27% after two years. By the end of the project, we identify strategies to further improve light management in the tandem devices and outline a pathway to reach 30%.In parallel, stability testing is conducted to evaluate said absorber and contact layers in the perovskite top cell, demonstrating 1000 hours of operation with less than 10% degradation at 1 sun. Our work on this project has made a leading impact on the development of perovskite/silicon tandems. The triple halide perovskite that we developed using iodide, bromide, and chloride and published in Science in March 2020 has received significant interest from other experts in the field at conferences. We took a silicon bottom cell with 21% efficiency, a technology that is responsible for a $30 billion market, and improved it by 30% relative. In addition, we have demonstrated impressive stability of our perovskite semitransparent top cells used in the tandems, showing for the first time packaged devices that pass a variety of IEC stability tests including damp heat, temperature cycling, and UV exposure tests.

14 SOLAR ENERGY↗
DOE OSTI2019

Chapter 3: Thin-Film Colloidal Quantum Dot Solar Cells

In under a decade, progress in quantum dot (QD) solar cell design and fabrication have increased PbS QD solar cell efficiencies from 3% to 11.3%. Such solar cells based on colloidal quantum dots offer the potential for a higher limiting power conversion efficiency through the enhancement of multiple exciton generation (MEG). In the MEG process, one photon produces two or more excitons that can contribute to power generation when the photon energy exceeds the semiconductor bandgap. The efficiency of the MEG process has also increased through the design and fabrication of new nanostructures. The fast pace at which QD devices are improving and the potential for a higher limiting efficiency - as MEG can increase the limiting power conversion efficiency (PCE) for a single-junction solar cell from 33% to ~ 45% - demonstrate the large potential of these systems.

14 SOLAR ENERGY↗
DOE OSTI2016

Quantum dot cosensitized solar cell based on PMOT@CdSe@ZnO core shell nanostructures with dual emission

Quantum dot sensitized solar cell based on poly(3-methoxythiophene) (PMOT)@CdSe@ZnO core shell nanostructure were synthesized where PMOT serves as hole transport material, CdSe acts as a photosensitizer which enhances visible range absorption and also helps in injection of electrons from PMOT to ZnO where ZnO provides channel for efficient electron transport. The properties of the device were assessed with and without CdSe quantum dots and effect of annealing was also observed on the device. After the addition of CdSe QDs, the visible light absorption of PMOT@ZnO was enhanced due to increase in surface area. PMOT@CdSe@ZnO exhibited dual emission, where CdSe and ZnO exhibited visible and UV emission respectively. The interface formed between PMOT and CdSe improves the charge separation. The better photovoltaic measurement of PMOT@CdSe@ZnO over CdSe@ZnO indicates that PMOT efficiently dissociate excitons at interface and suppress the interfacial charge recombination. A power conversion efficiency of 0.989% was attained for the device PMOT@CdSe@ZnO with V{sub oc}=0.56 V and J{sub sc}=2.5 mA/cm{sup 2}. Upon annealing, the efficiency of the device was enhanced to 1.1609% with V{sub oc}=0.58, J{sub sc}=3.2 mA/cm{sup 2}. - Highlights: • Synthesized PMOT@CdSe@ZnO is biluminescent in nature. • A power conversion efficiency of 0.989% was achieved with PMOT@CdSe@ZnO device which is superior to CdSe@ZnO and PMOT@ZnO. • Upon annealing, an efficiency of 1.1609% was achieved for device PMOT@CdSe@ZnO.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Tin–Lead Alloying for Efficient and Stable All-Inorganic Perovskite Solar Cells

Cesium containing all-inorganic perovskites have received considerable interest in photovoltaics research because of their potential for improved stability compared to their organic-inorganic hybrid counterparts. However, the inorganic perovskites studied thus far still suffer from lower power conversion efficiency and long-term instability, due to an unfavorable bandgap and either phase instability or air-sensitivity. Herein, A strategy to mitigate these concerns is investigated by alloying tin and lead on the B site to form tin-lead alloyed low-bandgap (~1.34 eV) inorganic CsSn 0.3 Pb 0.7 I 3 perovskites. Solar cells made using this material in an inverted full-structured architecture with a PEDOT:PSS hole transport materials (HTM) attain power conversion efficiency (PCE) up to 9.41% (stabilized PCE 7.23%). Furthermore, a simple HTM-free device without PEDOT:PSS layer is demonstrated more stable than the full-structured device and exhibits a PCE of 7.60% (stabilized PCE 7.31%) – the highest efficiency to date for an inorganic perovskite with a bandgap below 1.40 eV. This simplified device structure shows good reproducibility and stability. Finally, this work provides a possible route for fabricating low-cost, high stability devices with competitive efficiencies.

14 SOLAR ENERGY↗
DOE OSTI2024

Equally high efficiencies of organic solar cells processed from different solvents reveal key factors for morphology control

The power conversion efficiency of organic solar cells (OSCs) is exceeding 20%, an advance in which morphology optimization has played a significant role. It is generally accepted that the processing solvent (or solvent mixture) can help optimize morphology, impacting the OSC efficiency. Here we develop OSCs that show strong tolerance to a range of processing solvents, with all devices delivering high power conversion efficiencies around 19%. By investigating the solution states, the film formation dynamics and the characteristics of the processed films both experimentally and computationally, we identify the key factors that control morphology, that is, the interactions between the side chains of the acceptor materials and the solvent as well as the interactions between the donor and acceptor materials. Our work provides new understanding on the long-standing question of morphology control and effective guides to design OSC materials towards practical applications, where green solvents are required for large-scale processing.

14 SOLAR ENERGY↗
DOE OSTI2019

Beyond 30% Conversion Efficiency in Silicon Solar Cells: A Numerical Demonstration

We demonstrate through precise numerical simulations the possibility of flexible, thin-film solar cells, consisting of crystalline silicon, to achieve power conversion efficiency of 31%. Our optimized photonic crystal architecture consists of a 15 μm thick cell patterned with inverted micro-pyramids with lattice spacing comparable to the wavelength of near-infrared light, enabling strong wave-interference based light trapping and absorption. Unlike previous photonic crystal designs, photogenerated charge carrier flow is guided to a grid of interdigitated back contacts with optimized geometry to minimize Auger recombination losses due to lateral current flow. Front and back surface fields provided by optimized Gaussian doping profiles are shown to play a vital role in enhancing surface passivation. We carefully delineate the drop in power conversion efficiency when surface recombination velocities exceed 100 cm/s and the doping profiles deviate from prescribed values. These results are obtained by exact numerical simulation of Maxwell’s wave equations for light propagation throughout the cell architecture and a state-of-the-art model for charge carrier transport and Auger recombination.

14 SOLAR ENERGY↗