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We have demonstrated the first monolithic spatially separated four-band 640x512 pixel QWIP focal plane array.
We discuss the objectives of this demonstration opportunity, and the development and test steps required to deliver the QWIP Experiment to space.
In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE(delta)T, uniformity, and operability.
Long wavelength infrared (LWIR) detectors, 8 (micro)m to 12 (micro)m, are of great interest for a variety of ground-based and space-borne applications. These applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness, and low power dissipation. I will discuss the development and progress of GaAs based long-wavelength quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 9 (micro)m cutoff 640x480 QUIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 25 mK at 300 K background and the operating temperature is 70 K.
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEAT, uniformity, and operability.
In this paper, we discuss and compare the dependence of absorption, responsivity, dark current, and detectivity of QWIPs with the position of first excited state in the quantum well.
An optimized long-wavelength two-color Quantum Well Infrared Phototdetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NET, MRDT, uniformity, and operability.
In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.
A 640x512 pixel, long-wavelenghth multi-band and a broad-band quantum well infrared photo-detector (QWIP) focal plane array having a 15.4 um cutoff have been demonstrated.
In this paper, we will discuss the performance in terms of quantum efficiency, NEAT, uniformity, operability, and modulation transfer functions of the 1024x1024 pixel arrays and the progress of dualband QWIP focal plane array development work.
A mid-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) 1024x1024 pixel quantum well infrared photodetector (QWIP) focal plane array has been demonstrated with excellent imagery. MWIR focal plane has given noise equivalent differential temperature (NETD) of 19 mK at 95K operating temperature with f/2.5 optics at 300K background and LWIR focal plane has given NEDT of 13 mK at 70K operating temperature with same optical and background conditions as MWIR array. Both of these focal plane arrays have shown background limited performance (BLIP) at 90K and 70K operating temperatures with the same optics and background conditions. In this paper, we will discuss their performance in quantum efficiency, NETD, uniformity, and operability.
In this paper, we discuss the development of highly uniform longwavelength QWIPs for astronomical applications.
This paper describes the first demonstation of broadband QWIP focal plane array.
We discuss the results of a 10-16 um large format broadband QWIP focal plane arrary.
We discuss the development and the performance of a very long wavelength (13.5 - 15 128x128 AlGaAs/GaAs multiquantum well infrared imaging system. Highly uniform, high-yield QWIP focal plane array was hybridized to a CMOS multiplexer operating in a direct injection mode. For efficient light coupling an integral random scattering reflector (Random Grating) was incorporated. Due to the high uniformity, excellent imagery, low noise as well as a noise equivalent temperature difference (NE T) of less than 30 mK were obtained when operating around 45 K. Therefore, high image contrast signal to noise ratio has been achieved.
An optimized long-wavelength/very long-wavelength two-color Quantum Well Infrared Photodetector (QWIP) device structure has been designed. This device structure was grown on a three-inch semi-insulating GaAs substrate by molecular beam epitaxy (MBE).
Arguably one of the simplest device realizations of the classic - particle-in-a-box - problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP).