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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Performance of the THS4302 and the Class V Radiation-Tolerant THS4304-SP Silicon Germanium Wideband Amplifiers at Extreme Temperatures

This report discusses the performance of silicon germanium, wideband gain amplifiers under extreme temperatures. The investigated devices include Texas Instruments THS4304-SP and THS4302 amplifiers. Both chips are manufactured using the BiCom3 process based on silicon germanium technology along with silicon-on-insulator (SOI) buried oxide layers. The THS4304-SP device was chosen because it is a Class V radiation-tolerant (150 kRad, TID silicon), voltage-feedback operational amplifier designed for use in high-speed analog signal applications and is very desirable for NASA missions. It operates with a single 5 V power supply [1]. It comes in a 10-pin ceramic flatpack package, and it provides balanced inputs, low offset voltage and offset current, and high common mode rejection ratio. The fixed-gain THS4302 chip, which comes in a 16-pin leadless package, offers high bandwidth, high slew rate, low noise, and low distortion [2]. Such features have made the amplifier useful in a number of applications such as wideband signal processing, wireless transceivers, intermediate frequency (IF) amplifier, analog-to-digital converter (ADC) preamplifier, digital-to-analog converter (DAC) output buffer, measurement instrumentation, and medical and industrial imaging.

Patterson, Richard L.↗
NASA NTRS1987

Neutron radiation tolerance of Au-activated silicon

Double injection devices prepared by the introduction of deep traps, using the Au activation method have been found to tolerate gamma irradiation into the Gigarad (Si) region without significant degradation of operating characteristics. Silicon double injection devices, using deep levels creacted by Au diffusion, can tolerate fast neutron irradiation up to 10 to the 15th n/sq cm. Significant parameter degradation occurs at 10 to the 16th n/sq cm. However, since the actual doping of the basic material begins to change as a result of the transmutation of silicon into phosphorus for neutron fluences greater than 10 to the 17th/sq cm, the radiation tolerance of these devices is approaching the limit possible for any device based on initially doped silicon.

Joyner, W. T.↗
NASA NTRS1987

Modelling and design of high efficiency radiation tolerant indium phosphide space solar cells

Using a fairly comprehensive model, a parametric variation study was performed of the InP shallow homojunction solar cell with a view to determining the maximum realistically achievable efficiency and an optimum design that would yield this efficiency. Calculations show that with good-quality epitaxial material, a beginning-of-life efficiency of about 20.3 precent at 1AM0, 25 C may be possible. The design parameters of the near-optimum cell are given. Also presented are the expected effect on the performance parameters of radiation damage by 1-MeV electrons and a possible explanation of the high radiation tolerance of InP solar cells.

Goradia, Chandra↗
NASA NTRS1985

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Goradia, Chandra↗
NASA NTRS2016

Performance and Radiation Tolerance of InAs/GaSb LWIR Detectors Based on CBIRD Design

We report our recent developments of antimonide based infrared photodetectors utilizing a complementary barrier infrared detector (CBIRD) design. The new generation of devices can operate close to zero bias with the same quantum efficiency as the initial design. 320x256 pixel long-wavelength infrared focal plane arrays utilizing optimized design have been demonstrated with 8.8 µm cutoff wavelength and noise equivalent differential temperature of 26 mK at operating temperature of 80 K for 300 K background and f/2 optics. As CBIRD detectors became valuable candidates for space-based instruments, question of their radiation tolerance became important. Here, we report our investigations of the proton irradiation effects on the photodetector performance.

heterostructure↗
DOE OSTI2024

Probing elemental diffusion and radiation tolerance of perovskite solar cells via non-destructive Rutherford backscattering spectrometry

Mixed organic–inorganic halide perovskite-based solar cells have attracted interest in recent years due to their potential for both terrestrial and space applications. Analysis of interfaces is critical to predicting device behavior and optimizing device architectures. Most advanced tools to study buried interfaces are destructive in nature and can induce further degradation. Ion beam techniques, such as Rutherford backscattering spectrometry (RBS), is a useful non-destructive method to probe an elemental depth profile of multilayered perovskite solar cells (PSCs) as well as to study the inter-diffusion of various elemental species across interfaces. Additionally, PSCs are becoming viable candidates for space photovoltaic applications, and it is critical to investigate their radiation-induced degradation. RBS can be simultaneously utilized to analyze the radiation effects induced by He+ beam on the device, given their presence in space orbits. In the present work, a 2 MeV He+ beam was used to probe the evidence of elemental diffusion across PSC interfaces with architecture glass/ITO/SnO2/Cs0.05(MA0.17FA0.83)0.95Pb(I0.83Br0.17)3/spiro-OMeTAD/MoO3/Au. During the analysis, the device active area was exposed to an irradiation equivalent of up to 1.62 × 1015 He+/cm2, and yet, no measurable evidence (with a depth resolution ∼1 nm) of beam-induced ion migration was observed, implying high radiation tolerance of PSCs. On the other hand, aged PSCs exhibited indications of the movement of diverse elemental species, such as Au, Pb, In, Sn, Br, and I, in the active area of the device, which was quantified with the help of RBS.

14 SOLAR ENERGY↗
DOE OSTI2021

Proton-Radiation Tolerant All-Perovskite Multijunction Solar Cells

Radiation-resistant but cost-efficient, flexible, and ultralight solar sheets with high specific power (W g -1 ) are the "holy grail" of the new space revolution, powering private space exploration, low-cost missions, and future habitats on Moon and Mars. Herein, this study investigates an all-perovskite tandem photovoltaic (PV) technology that uses an ultrathin active layer (1.56 micrometers) but offers high power conversion efficiency, and discusses its potential for high-specific-power applications. This study demonstrates that all-perovskite tandems possess a high tolerance to the harsh radiation environment in space. The tests under 68 MeV proton irradiation show negligible degradation (<6%) at a dose of 10 13 p + cm -2 where even commercially available radiation-hardened space PV degrade >22%. Using high spatial resolution photoluminescence (PL) microscopy, it is revealed that defect clusters in GaAs are responsible for the degradation of current space-PV. By contrast, negligible reduction in PL of the individual perovskite subcells even after the highest dose studied is observed. Studying the intensity-dependent PL of bare low-gap and high-gap perovskite absorbers, it is shown that the V OC , fill factor, and efficiency potentials remain identically high after irradiation. Radiation damage of all-perovskite tandems thus has a fundamentally different origin to traditional space PV.

14 SOLAR ENERGY↗
DOE OSTI2022

Development of a Radiation-Tolerant Front End Digitizer

High-radiation and high-temperature environments represent notoriously detrimental conditions for electronics. Yet sensors and instrumentation are critically important for the safe operation of nuclear reactors and for the validity of the scientific experiments conducted within them. Traditionally, sensors in such extreme environments operate with few active components, resulting in small signals (mV–V, nA–µA range) that must be transmitted through long cable runs before digitization by sensitive data acquisition systems located in clean, less-harsh environments. Long cables are prone to picking up noise through electromagnetic interference and distortion caused by their parasitic impedances, resulting in signal degradation. The Front End Digitizer (FREND) system described and demonstrated herein seeks to address these issues by enabling the placement of a radiation-resistant analog front end within reactor containment, or other high-radiation environments. FREND will enable early signal pre-amplification, digitization, and optical encoding within the high-radiation field to transmit sensor signals over an optical fiber to the non-nuclear environment of an instrument room. Early signal pre-amplification and digitization maintain signal integrity, whereas optical transmission renders the system blind to induced electromagnetic noise over the long cable runs. This report describes the FREND initial prototype, which can multiplex and optically encode data from up to four sensor inputs, though, in principle, this can be extended to any number of sensor inputs. The end result is an extremely flexible, high-fidelity system.

42 ENGINEERING↗
DOE OSTI2026

Radiation Tolerance of Nanoporous Gadolinium Titanate

Defect sinks play a crucial role in reducing radiation-induced damage accumulation, but their effectiveness varies. This study directly compares the efficacy of grain boundaries and pores (free surfaces) in gadolinium titanate (Gd 2 Ti 2 O 7 ) using in situ ion irradiation transmission electron microscopy (TEM). A unique sample configuration is developed, where each of the three distinct regions, each containing only one primary sink of interest, is in the same TEM lamella for simultaneous irradiation. Regular assessments of crystallinity in each region via nanobeam electron diffraction show that, at both room temperature and 600°C, free surface (pore) defect sinks are more effective than grain boundaries in capturing radiation-induced defects and delaying the onset of amorphization. These findings have significant implications for further microstructural engineering and the design of radiation-resistant microstructures.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Attia, John Okyere↗
DOE OSTI2020

A study of radiation tolerance in optical cements

We study the effect ionizing radiation has on light transmission in the wavelength range 190–1100 nm for a number of optically clear epoxies. We find that the transmittance of traditional, commercially available, optical epoxies show significant degradation for exposures of 1×10 12 MIPs/cm 2 . Degradation of light transmission progresses from the shortest wavelengths at low doses to longer wavelengths as the dose increases. In epoxy joints that are 0.1 mm thick, we observe that more than 5% of the light is lost for wavelengths less than 400 nm for traditional optical epoxies. Our studies have identified an optically clear epoxy that shows little degradation for radiation exposures up to 5.9× 10 14 MIPs/cm 2 (≈ 220 kGy).

Radiation-hard detectors↗
NASA NTRS2017

Options for Radiation Tolerant High-Performance Memory

Memory technologies were reviewed for radiation effects performance in order to determine the most cost-efficient target for a possible memory investment targeted at creating a memory component of general applicability for space use. TID and SEL trends that had indicated improvement in intrinsic performance based on scaling cannot be trusted. SEE hardening of memory arrays is prohibitive in terms of cell-level power and area requirements. Radiation-hardened cells and custom controllers are recommended for future memory developments.

Some, Raphael↗
NASA NTRS1990

Fault tolerant, radiation hard, high performance digital signal processor

An architecture has been developed for a high-performance VLSI digital signal processor that is highly reliable, fault-tolerant, and radiation-hard. The signal processor, part of a spacecraft receiver designed to support uplink radio science experiments at the outer planets, organizes the connections between redundant arithmetic resources, register files, and memory through a shuffle exchange communication network. The configuration of the network and the state of the processor resources are all under microprogram control, which both maps the resources according to algorithmic needs and reconfigures the processing should a failure occur. In addition, the microprogram is reloadable through the uplink to accommodate changes in the science objectives throughout the course of the mission. The processor will be implemented with silicon compiler tools, and its design will be verified through silicon compilation simulation at all levels from the resources to full functionality. By blending reconfiguration with redundancy the processor implementation is fault-tolerant and reliable, and possesses the long expected lifetime needed for a spacecraft mission to the outer planets.

Holmann, Edgar↗
DOE OSTI2020

Radiation tolerance of the PNI RM3100 magnetometer for a Europa lander mission

The results of two radiation test campaigns on a low-cost commercial off-the-shelf magnetometer are presented. The test setup and the total ionization dose (TID) levels studied were designed to meet the requirements of a mission to land on Europa. Based on the Europa Lander Science Definition Team report, instruments inside an aluminum vault at the surface of Europa would need to withstand TID of up to 300 krad(SI). In order to evaluate the performance of the PNI RM3100 magnetometer, nine separate sensors were irradiated at two different facilities during two separate campaigns and under different configurations, including passive and active tests. Of the nine sensors, seven survived the TID of 300 krad(SI) while the other two sensors started presenting failures after reaching 150 krad(SI). Post-irradiation tests showed that eight of the nine sensors continued to work without appreciable degradation after stopping exposure, while one sensor stopped working altogether.

58 GEOSCIENCES↗
NASA NTRS2003

Radiation tolerant back biased CMOS VLSI

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power.

Maki, Gary K.↗