Conical radiation detectors
Thin copper shell and wire-wound conical radiation detectors for measuring radiant flux
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Thin copper shell and wire-wound conical radiation detectors for measuring radiant flux
Silicon radiation detectors are an integral component of current and planned collider experiments in high energy physics. Simulations of these detectors are essential for deciding operational configurations, for performing precise data analysis, and for developing future detectors. In this white paper, we briefly review the existing tools and discuss challenges for the future that will require research and development to be able to cope with the foreseen extreme radiation environments of the High Luminosity runs of the Large Hadron Collider and future hadron colliders like FCC-hh and SPPC.
Trapped radiation detector for Mariner C program
CdZnTeSe (CZTS) is a next gen replacement room temperature radiation detector that solves common issues with modern CZT detectors. • Surface states can trap radiation induced carriers and can act as leakage current pathways requiring detectors to passivated for optimal performance. • In this work, we seek to identify the best passivation technique for CZTS detectors.
Silicon detector for beta radiation measurement - fabrication of surface barrier silicon detector, and Fortran program for analysis of beta ray measurements
Cesium lead bromide (CsPbBr 3 ) is an upcoming semiconductor radiation detector that has the potential to match the detection properties of cadmium zinc telluride (CZT) and thallium bromide (TlBr). In this paper, we report on CsPbBr 3 gamma detectors with an uncorrected energy resolution of 2% at 662 keV with photopeak-to-Compton ratios as high as 14.3 and hole mobility-lifetime products (μτ h ) as high as 1.7 × 10 –2 cm 2 V –1 . Furthermore, we demonstrate that the processes employed for material purification and crystal growth of high-performing devices are scalable, and large (up to 65 mm in diameter) ultrahigh purity CsPbBr 3 crystals have been successfully grown. Furthermore by using optimized growth conditions and detector fabrication processes, we were able to mitigate the polarization problem where it was revealed that the polarization process is highly dependent on the crystal quality and the electric field direction with respect to the orientation of the crystal.
Charge-sensitive amplifier for use with solid state radiation detectors in spacecraft instrumentation system
Research on large volume lithium drifted silicon and germanium radiation detectors
Real‐time awareness of space radiation is critical for missions beyond LEO. Missions to the Moon, Mars, Near‐Earth‐Objects (NEOs), inner and outer planets, as well as other destinations in space, will require embedded instrumentation to provide feedback for “smart”, adaptive control systems. Precision instrumentation will also be needed to provide improved data for space radiation modeling and space weather forecasting and awareness. Compact instrumentation on small platforms such as CubeSats and other small space‐faring vehicles will provide a better understanding of the space radiation environment by supplying data from multiple locations in space where information is yet unknown. Compact integrable solid‐state detectors with low noise and high tolerance of operation in a radiation environment are enabled by the application of Wide Band Gap semiconductors as radiation detectors. NASA Glenn Research Center (GRC) is applying its expertise and facilities in harsh environment instrumentation to develop supporting technologies that enable improved instruments for space science missions. A variety of radiation detectors are under development, such as silicon carbide semiconductor detectors, for applications to space science, lunar prospecting, and fission power systems.
Recent advances in image data proccesing through deep learning allow for new optimization and performance-enhancement schemes for radiation detectors and imaging hardware. This enables radiation experiments, which includes photon sciences in synchrotron and X-ray free electron lasers as a subclass, through data-endowed artificial intelligence. We give an overview of data generation at photon sources, deep learning-based methods for image processing tasks, and hardware solutions for deep learning acceleration. Most existing deep learning approaches are trained offline, typically using large amounts of computational resources. However, once trained, DNNs can achieve fast inference speeds and can be deployed to edge devices. A new trend is edge computing with less energy consumption (hundreds of watts or less) and real-time analysis potential. While popularly used for edge computing, electronic-based hardware accelerators ranging from general purpose processors such as central processing units (CPUs) to application-specific integrated circuits (ASICs) are constantly reaching performance limits in latency, energy consumption, and other physical constraints. These limits give rise to next-generation analog neuromorhpic hardware platforms, such as optical neural networks (ONNs), for high parallel, low latency, and low energy computing to boost deep learning acceleration (LA-UR-23-32395).
The small dimensions of superconducting tunnel junction (STJ) radiation detectors have motivated the development of STJ arrays to increase detection efficiency and statistical accuracy. We have used a pulsed UV laser and X-rays to characterize and understand non-uniformities in the response of different pixels in Ta-based STJ arrays. To separate the contributions of the detector and the readout electronics, we have also injected the pulses from an arbitrary waveform generator into the array’s amplifier chain. We discuss the magnitude and the sources of the non-uniformity and approaches to reduce it.
Mosaic semiconductor radiation detector and position indicator systems engineering for low energy particles
The flight models of the active radiation detector (ARD) for the ENV-01 environmental monitor were calibrated using gamma radiation. Measured sensitivities of the ion chambers were 6.1 + or - 0.3 micron rad per count for ARD S/N1, and 10.4 + or - 0.5 micron rad per count for ARD S/N2. Both were linear over the measured range 0.10 to 500 m/rad hour. The particle counters (proportional counters) were set to respond to approximately 85% of minimum ionizing particles of unit charge passing through them. These counters were also calibrated in the gamma field.
Design, fabrication and performance testing of gamma radiation detector capable of operating in vicinity of nuclear powered rocket engines
Processing circuitry is provided for a high voltage operated radiation detector. An event detector utilizes a comparator configured to produce an event signal based on a leading edge threshold value. A preferred event detector does not produce another event signal until a trailing edge threshold value is satisfied. The event signal can be utilized for counting the number of particle hits and also for controlling data collection operation for a peak detect circuit and timer. The leading edge threshold value is programmable such that it can be reprogrammed by a remote computer. A digital high voltage control is preferably operable to monitor and adjust high voltage for the detector.
A simplified radiation detector was designed which employs an activated continuous front surface consisting of either the diffused or barrier type of semiconducting material with a grid structure on the nonactivated side of the detector. Its form may be either a rectangular coordinate or a polar coordinate system.
This work will focus on the development of perovskite radiation detectors fabricated with nanocrystal, thick polycrystalline films, or single crystal materials. This will harness NREL’s instrumentation and expertise in a variety of research areas including but not limited to metal halide perovskites, device characterization, device packaging, accelerated lifetime testing, and ink chemistry development.
Apparatus for detecting radiation includes a sensor medium disposed within a cavity in a silicon-based substrate. An electrode arrangement is provided for collecting charge generated within the sensor medium by interactions with impinging radiation and drifted through the sensor medium. The electrode arrangement is constituted, in part, by a silicon portion of the substrate that is doped to increase its electrical conductivity and that defines part of the cavity wall.