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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Modified silicon-germanium alloys with improved performance

This paper discusses the results of a program on the modification of silicon-germanium alloys by means of small extraneous material additions in order to improve their figures-of-merit. A review of the properties that constitute the figure-of-merit indicates that it is the relatively high thermal conductivity of silicon-germanium alloys that is responsible for their low values of figure-of-merit. The intent of the effort discussed in this paper is therefore the reduction of the thermal conductivity of silicon-germanium alloys by minor alloy additions and/or changes in the basic structure of the material. Because Group III and V elements are compatible with silicon and germanium, the present effort in modifying silicon-germanium alloys has concentrated on additions of gallium phosphide. A significant reduction in thermal conductivity, approximately 40 to 50 percent, has been demonstrated while the electrical properties are only slightly affected as a result. The figure-of-merit of the resultant material is enhanced over that of silicon-germanium alloys and when fully optimized is potentially better than that of any other presently available thermoelectric material.

Pisharody, R. K.↗
NASA NTRS1994

Reactive Melt Infiltration of Silicon-Niobium Alloys in Microporous Carbons

Studies of the reactive melt infiltration of silicon-niobium alloys in microporous carbon preforms prepared by the pyrolysis of a polymer precursor have been carried out using modeling, Differential Thermal Analysis (DTA), and melt infiltration. Mercury porosimetry results indicate a very narrow pore size distribution with virtually all the porosity within the carbon preforms open to infiltrants. The morphology and amount of the residual phases (niobium disilicide and silicon) in the infiltrated material can be tailored according to requirements by careful control of the properties (pore size and pore volume) of the porous carbon preforms and alloy composition. The average room temperature four-point flexural strength of a reaction-formed silicon carbide material (made by the infiltration of medium pore size carbon preform with Si - 5 at. % Nb alloy) is 290 +/- 40 MPa (42 +/- 6 ksi) and the fracture toughness is 3.7 +/- 0.3 MPa square root of m. The flexural strength decreases at high temperatures due to relaxation of residual thermal stresses and the presence of free silicon in the material.

Singh, M.↗
NASA NTRS1972

Dopant precipitation in silicon-germanium alloys.

The model commonly used to describe dopant precipitation in silicon-germanium alloys is discussed. The results of an experimental program are fit to the model in order to determine the long-term behavior of the thermoelectric properties of the n-type 80 at. % Si/20 at. % Ge alloy. Thermoelectric property projections to twelve years of operating time are given.

Raag, V.↗
NASA NTRS1981

Present growth technology of silicon germanium alloys and possible advantages of microgravity growth

The growth technology of Silicon-germanium (Si-Ge) alloys and the possible advantages of growth in microgravity is reviewed. The Si-Ge alloys have a continuous variation of bandgap energy from the germanium bandgap to the silicon bandgap. The unusual two slope behavior of Eg versus composition is due to the differences in the conduction band structure between Si and Ge. Below 17% (atomic), the germanium band structure dominates; and above it, the bands are "silicon like". It is found that the growth of Si-Ge alloys in microgravity is very attractive. In particular, the float zone method, in which a liquid zone of controlled starting composition, used to grow a large amount of useful alloy crystal. Large temperature gradients and relatively flat growth interfaces are necessary to obtain homogeneous crystal growth.

Stafsudd, O. M.↗
NASA NTRS1995

Reactive melt infiltration of silicon-molybdenum alloys into microporous carbon preforms

Investigations on the reactive melt infiltration of silicon-1.7 and 3.2 at.% molybdenum alloys into microporous carbon preforms have been carried out by modeling, differential thermal analysis (DTA), and melt infiltration experiments. These results indicate that the pore volume fraction of the carbon preform is a very important parameter in determining the final composition of the reaction-formed silicon carbide and the secondary phases. Various undesirable melt infiltration results, e.g. choking-off, specimen cracking, silicon veins, and lake formation, and their correlation with inadequate preform properties are presented. The liquid silicon-carbon reaction exotherm temperatures are influenced by the pore and carbon particle size of the preform and the compositions of infiltrants. Room temperature flexural strength and fracture toughness of materials made by the silicon-3.2 at.% molybdenum alloy infiltration of medium pore size preforms are also discussed.

Singh, M.↗
NASA NTRS1991

A model for the high-temperature transport properties of heavily doped n-type silicon-germanium alloys

A model is presented for the high-temperature transport properties of large-grain-size, heavily doped n-type silicon-germanium alloys. Electron and phonon transport coefficients are calculated using standard Boltzmann equation expressions in the relaxation time approximation. Good agreement with experiment is found by considering acoustic phonon and ionized impurity scattering for electrons, and phonon-phonon, point defect, and electron-phonon scattering for phonons. The parameters describing electron transport in heavily doped and lightly doped materials are significantly different and suggest that most carriers in heavily doped materials are in a band formed largely from impurity states. The maximum dimensionless thermoelectric figure of merit for single-crystal, n-type Si(0.8)Ge(0.2) at 1300 K is estimated at ZT about 1.13 with an optimum carrier concentration of n about 2.9 x 10 to the 20th/cu cm.

Vining, Cronin B.↗
NASA NTRS1975

The solidification under zero gravity conditions of binary alloys exhibiting solid state immiscibility

The solidification behavior of gold-silicon alloys containing up to 25 at. % silicon was studied, and a mathematical model of gravity segregation during solidification was developed. A background of knowledge is provided which can be used in the design of zero gravity solidification experiments to be carried out in the 300-ft drop tower, in Aerobee rockets and in future space missions. Such experiments are needed to develop the basic scientific knowledge required for the design of economically viable space manufacturing processes. Some preliminary zero gravity experiments were carried out on a gold-25 at. % silicon alloy using the drop tower facility.

Johnson, A. A.↗
NASA NTRS1992

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Singh, M.↗
NASA NTRS1991

Radiation resistance of thin-film solar cells for space photovoltaic power

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Woodyard, James R.↗
NASA NTRS1990

Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmas

Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.

Shing, Y. H.↗
NASA NTRS1989

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Vandersande, Jan W.↗
NASA NTRS2015

Thermal Pyrolytic Graphite Enhanced Components

A thermally conductive composite material, a thermal transfer device made of the material, and a method for making the material are disclosed. Apertures or depressions are formed in aluminum or aluminum alloy. Plugs are formed of thermal pyrolytic graphite. An amount of silicon sufficient for liquid interface diffusion bonding is applied, for example by vapor deposition or use of aluminum silicon alloy foil. The plugs are inserted in the apertures or depressions. Bonding energy is applied, for example by applying pressure and heat using a hot isostatic press. The thermal pyrolytic graphite, aluminum or aluminum alloy and silicon form a eutectic alloy. As a result, the plugs are bonded into the apertures or depressions. The composite material can be machined to produce finished devices such as the thermal transfer device. Thermally conductive planes of the thermal pyrolytic graphite plugs may be aligned in parallel to present a thermal conduction path.

Hardesty, Robert E.↗
NASA NTRS1988

T55-L-712 turbine engine compressor housing refurbishment-plasma spray project

A study was conducted to assess the feasibility of reclaiming T55-L-712 turbine engine compressor housings with an 88 wt percent aluminum to 12 wt percent silicon alloy applied by a plasma spray process. Tensile strength testing was conducted on as-sprayed and thermally cycled test specimens which were plasma sprayed with 0.020 to 0.100 in. coating thicknesses. Satisfactory tensile strength values were observed in the as-sprayed tensile specimens. There was essentially no decrease in tensile strength after thermally cycling the tensile specimens. Furthermore, compressor housings were plasma sprayed and thermally cycled in a 150-hr engine test and a 200-hr actual flight test during which the turbine engine was operated at a variety of loads, speeds and torques. The plasma sprayed coating system showed no evidence of degradation or delamination from the compressor housings. As a result of these tests, a procedure was designed and developed for the application of an aluminum-silicon alloy in order to reclaim T55-L-712 turbine engine compressor housings.

Leissler, George W.↗
NASA NTRS2009

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277<X<1.0,(ii) is approximately 0.2777 where the layer of Si(1-x)Ge(x)interfaces with the cubic diamond structure SiGe, and (iii) increases linearly with the thickness of the layer of Si(1-x)Ge(x).

Park, Yeonjoon↗
DOE OSTI2020

Intrinsic chemical reactivity of solid-electrolyte interphase components in silicon–lithium alloy anode batteries probed by FTIR spectroscopy

Herein we report the solid reaction products from the chemical reaction of aprotic battery electrolyte and three purported components of the Si-based anode SEI : SiO 2 nanoparticles (NPs), lithium silicate (Li x SiO y ) powders, and Si NPs. We use FTIR and classical molecular dynamics/density functional perturbation theory to assess the solid products remaining with these model materials after exposure to electrolyte. The absence of electrochemical bias provides a view of the chemical speciation resulting from early-stage chemical reactivity during battery assembly as well as under open circuit storage conditions. We believe these species represent the initial stages of SEI growth and predict they likely drive subsequent chemical and electrochemical reactions by controlling molecular interactons at the Si active material interface. We find that nominally equivalent materials react differently even before any electrochemistry is performed (e.g., acidic SiO 2 dissolves whereas alkaline SiO 2 is relatively robust), and derive new understanding of the chemical species that could and could not form stable SEI components in Si-based anodes. These results can be used to inform how to passivate Si anode surfaces and potentially generate an artificially engineered SEI that would be stable and enable next-generation battery anodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗