Search NASA⌕ Search

SEARCH · Search NASA

Results for “SILICON ALLOY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Studies on the reactive melt infiltration of silicon and silicon-molybdenum alloys in porous carbon

Investigations on the reactive melt infiltration of silicon and silicon-1.7 and 3.2 at percent molybdenum alloys into porous carbon preforms have been carried out by process modeling, differential thermal analysis (DTA) and melt infiltration experiments. These results indicate that the initial pore volume fraction of the porous carbon preform is a critical parameter in determining the final composition of the raction-formed silicon carbide and other residual phases. The pore size of the carbon preform is very detrimental to the exotherm temperatures due to liquid silicon-carbon reactions encountered during the reactive melt infiltration process. A possible mechanism for the liquid silicon-porous (glassy) carbon reaction has been proposed. The composition and microstructure of the reaction-formed silicon carbide has been discussed in terms of carbon preform microstructures, infiltration materials, and temperatures.

Singh, M.↗
NASA NTRS1991

Radiation resistance of thin-film solar cells for space photovoltaic power

Copper indium diselenide, cadmium telluride, and amorphous silicon alloy solar cells have achieved noteworthy performance and are currently being studied for space power applications. Cadmium sulfide cells had been the subject of much effort but are no longer considered for space applications. A review is presented of what is known about the radiation degradation of thin film solar cells in space. Experimental cadmium telluride and amorphous silicon alloy cells are reviewed. Damage mechanisms and radiation induced defect generation and passivation in the amorphous silicon alloy cell are discussed in detail due to the greater amount of experimental data available.

Woodyard, James R.↗
NASA NTRS1990

Silicon carbon alloy thin film depositions using electron cyclotron resonance microwave plasmas

Amorphous and microcrystalline silicon carbon films (a-SiC:H, micro-c-SiC:H) have been deposited using SiH4, CH4 and H2 mixed gas ECR (electron cyclotron resonance) plasmas. The optical bandgap of a-SiC:H films is not dependent on the hydrogen dilution in the ECR plasma. The deposition rate of a-SiC:H films is found to be strongly dependent on the ECR magnetic field and the hydrogen dilution. The hydrogen dilution effect on the deposition rate indicates that the etching in ECR hydrogen plasmas plays an important role in the deposition of a-SiC:H films. The optical constants n and k of ECR-deposited a-SiC:H films in the wavelength region of 0.4 to 1.0 micron are determined to be 2.03-1.90 and 0.04-0.00, respectively. The microstructures of ECR-deposited micro-c-SiC:H films are shown by X-ray diffraction and SEM (scanning electron microscopy) to be composed of 1000-A alpha-SiC microcrystallites and amorphous network structures.

Shing, Y. H.↗
NASA NTRS1989

Annealing group III-V compound doped silicon-germanium alloy for improved thermo-electric conversion efficiency

The thermoelectric conversion efficiency of a GaP doped SiGe alloy is improved about 30 percent by annealing the alloy at a temperature above the melting point of the alloy, preferably stepwise from 1200 C to 1275 C in air to form large grains having a size over 50 microns and to form a GeGaP rich phase and a silicon rich phase containing SiP and SiO2 particles.

Vandersande, Jan W.↗
NASA NTRS2015

Thermal Pyrolytic Graphite Enhanced Components

A thermally conductive composite material, a thermal transfer device made of the material, and a method for making the material are disclosed. Apertures or depressions are formed in aluminum or aluminum alloy. Plugs are formed of thermal pyrolytic graphite. An amount of silicon sufficient for liquid interface diffusion bonding is applied, for example by vapor deposition or use of aluminum silicon alloy foil. The plugs are inserted in the apertures or depressions. Bonding energy is applied, for example by applying pressure and heat using a hot isostatic press. The thermal pyrolytic graphite, aluminum or aluminum alloy and silicon form a eutectic alloy. As a result, the plugs are bonded into the apertures or depressions. The composite material can be machined to produce finished devices such as the thermal transfer device. Thermally conductive planes of the thermal pyrolytic graphite plugs may be aligned in parallel to present a thermal conduction path.

Hardesty, Robert E.↗
NASA NTRS1988

T55-L-712 turbine engine compressor housing refurbishment-plasma spray project

A study was conducted to assess the feasibility of reclaiming T55-L-712 turbine engine compressor housings with an 88 wt percent aluminum to 12 wt percent silicon alloy applied by a plasma spray process. Tensile strength testing was conducted on as-sprayed and thermally cycled test specimens which were plasma sprayed with 0.020 to 0.100 in. coating thicknesses. Satisfactory tensile strength values were observed in the as-sprayed tensile specimens. There was essentially no decrease in tensile strength after thermally cycling the tensile specimens. Furthermore, compressor housings were plasma sprayed and thermally cycled in a 150-hr engine test and a 200-hr actual flight test during which the turbine engine was operated at a variety of loads, speeds and torques. The plasma sprayed coating system showed no evidence of degradation or delamination from the compressor housings. As a result of these tests, a procedure was designed and developed for the application of an aluminum-silicon alloy in order to reclaim T55-L-712 turbine engine compressor housings.

Leissler, George W.↗
NASA NTRS2009

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277<X<1.0,(ii) is approximately 0.2777 where the layer of Si(1-x)Ge(x)interfaces with the cubic diamond structure SiGe, and (iii) increases linearly with the thickness of the layer of Si(1-x)Ge(x).

Park, Yeonjoon↗
NASA NTRS1987

Development of improved p-type silicon-germanium alloys

Annealing experiments in the temperature range 1100-1275 C have been performed on p-type Si(0.8)Ge(0.2) samples with BP, B(6.5)P, and GaSb material additives. Both electrical resistivity and Seebeck coefficient generally decrease for these samples as annealing temperature is increased, with thermoelectric power factor sometimes being improved by annealing.

Mclane, George↗
NASA NTRS1989

Multiple doping of silicon-germanium alloys for thermoelectric applications

It is shown that heavy doping of n-type Si/Ge alloys with phosphorus and arsenic (V-V doping interaction) by diffusion leads to a significant enhancement of their carrier concentration and possible improvement of the thermoelectric figure of merit. High carrier concentrations were achieved by arsenic doping alone, but for a same doping level higher carrier mobilities and lower resistivities are obtained through phosphorus doping. By combining the two dopants with the proper diffusion treatments, it was possible to optimize the different properties, obtaining high carrier concentration, good carrier mobility and low electrical resistivity. Similar experiments, using the III-V doping interaction, were conducted on boron-doped p-type samples and showed the possibility of overcompensating the samples by diffusing arsenic, in order to get n-type behavior.

Fleurial, Jean-Pierre↗
NASA NTRS2014

Thermophysical Property Measurements of Silicon-Transition Metal Alloys

Metals and metallic alloys often have high melting temperatures and highly reactive liquids. Processing reactive liquids in containers can result in significant contamination and limited undercooling. This is particularly true for molten silicon and it alloys. Silicon is commonly termed "the universal solvent". The viscosity, surface tension, and density of several silicon‐transition metal alloys were determined using the Electrostatic Levitator system at the Marshall Space Flight Center. The temperature dependence of the viscosity followed an Arrhenius dependence, and the surface tension followed a linear temperature dependence. The density of the melts, including the undercooled region, showed a linear behavior as well. Viscosity and surface tension values were obtain for several of the alloys in the undercooled region.

Banish, R. Michael↗
NASA NTRS2000

Affordable, Robust Ceramic Joining Technology (ARCJoinT) Given 1999 R and D 100 Award

Advanced ceramics and fiber-reinforced ceramic matrix composites with high strength and toughness, good thermal conductivity, thermal shock resistance, and oxidation resistance are needed for high-temperature structural applications in advanced high-efficiency and high-performance engines, space propulsion components, and land-based systems. The engineering designs of these systems require the manufacturing of large parts with complex shapes, which are either quite expensive or impossible to fabricate. In many instances, it is more economical to build complex shapes by joining together simple geometrical shapes. Thus, joining has been recognized as an enabling technology for the successful utilization of advanced ceramics and fiber-reinforced composite components in high-temperature applications. However, such joints must retain their structural integrity at high temperatures and must have mechanical strength and environmental stability comparable to those of the bulk materials. In addition, the joining technique should be robust, practical, and reliable. ARCJoinT, which is based on the reaction-forming approach, is unique in terms of producing joints with tailorable microstructures. The formation of joints by this approach is attractive since the thermomechanical properties of the joint interlayer can be tailored to be very close to those of the base materials. In addition, high-temperature fixturing is not needed to hold the parts at the infiltration temperature. The joining process begins with the application of a carbonaceous mixture in the joint area, holding the items to be joined in a fixture, and curing at 110 to 120 C for 10 to 20 min. This step fastens the pieces together. Then, silicon or a silicon alloy in tape, paste, or slurry form is applied around the joint region and heated to 1250 to 1425 C (depending on the type of infiltrant) for 10 to 15 min. The molten silicon or silicon-refractory metal alloy reacts with carbon to form silicon carbide with controllable amounts of silicon and other phases as determined by the alloy composition. Joint thickness can be readily controlled through adjustments of the properties of the carbonaceous paste and the applied fixturing force. The photograph shows various shapes of silicon-carbide-based ceramics and fiberreinforced composites that have been joined using ARCJoinT. Thermomechanical and thermochemical characterization of joints is underway for a wide variety of silicon-carbidebased advanced ceramics and fiber-reinforced composites under the hostile environments that will be encountered in engine applications. ARCJoinT, which was developed by researchers at the NASA Glenn Research Center at Lewis Field, received R&D Magazine's prestigious R&D 100 Award in 1999.

Singh, Mrityunjay↗
NASA NTRS2001

The Science of Detached Bridgman Growth and Solutocapillary Convection in Solid Solution Crystals

Bridgman and Float-zone crystal growth experiments are planned for NASA's First Materials Science Research Rack using the European Space Agency's Materials Science Laboratory with the Low Gradient Furnace (LGF) and Float Zone Furnace with Rotating Magnetic Field (FMF) inserts, respectively. Samples will include germanium and germanium-silicon alloys with up to 10 atomic percent silicon. The Bridgman part of the investigation includes detached growth samples and so there will be a solid-liquid-gas tri-junction in those experiments just as there will be in all float-zone experiments. There are other similarities as well as significant differences between the types of growth that will be discussed. The presentation will call attention to the reasons that experiments in microgravity will provide information unattainable from Earth-based experiments.

Szofran, F. R.↗
NASA NTRS1983

Gallium arsenide single crystal solar cell structure and method of making

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

Stirn, Richard J.↗
NASA NTRS2008

Silicon germanium semiconductive alloy and method of fabricating same

A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

Park, Yeonjoon↗
NASA NTRS1995

Affordable Fiber-Reinforced Ceramic Composites Win 1995 R and D 100 Award

Affordable fiber-reinforced ceramic matrix composites (AFReCC) with high strength and toughness, good thermal conductivity, thermal shock resistance, and oxidation resistance are needed for high-temperature structural applications. AFReCC materials will have various applications in advanced high-efficiency and high-performance engines: that is, the High Speed Civil Transport (HSCT), space propulsion components, and land-based systems. For example, silicon-carbide-fiber-reinforced silicon carbide matrix composites show promise for meeting the criteria of high strength, thermal conductivity, and toughness required for the HSCT combustor liner. AFReCC received R&D Magazine's prestigious R&D 100 Award in 1995. The fabrication process for these composites has three steps. In the first step, fiber preforms are made and chemical vapor infiltration is used to apply the desired interface coating on the fibers. This step also rigidizes the preform. The second step consists of resin infiltration, which after pyrolysis, yields an interconnected network of porous carbon as the matrix. In the final step of the process, the carbon-containing preform is infiltrated with molten silicon or silicon alloys in a furnace. This converts the carbon to silicon carbide leaving as little as 5 percent residual free silicon or refractory disilicide phase. This process is suitable for any type of small-diameter fiber (e.g., carbon, alumina, or silicon carbide) woven into a two- or three-dimensional architecture. This processing approach leads to dense composites where matrix microstructure and composition can be tailored for optimum properties. It has much lower processing cost (less than 50 percent) in comparison to other approaches to fabricating silicon-carbide-based composites. The photograph shows the various AFReCC components. Thermomechanical and thermochemical characterization of these composites under the hostile environments that will be encountered in engine applications is underway.

Source record↗