The SIRTF Science Operations System
This paper describes the role and function of the SSC, the architecture of the SOS, and discusses the major SOS subsystems. Examples of products generated by the SOS are included.
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Nonuniform Response of Vegetation Phenology to Daytime and Nighttime Warming in Urban Areas
The phenological response of vegetation to changing climates requires exploration across environments, including urban areas with elevated daytime and nighttime temperatures (T D and T N ) and artificial lights. Here, we analyzed multiple remotely-sensed datasets (2012–2021) from and around a highly-urbanized area, Seoul, in South Korea. While the urban fraction and artificial lights largely contributed to advancing the start-of-season (SOS) and delaying the end-of-season (EOS) (30.7–42.1%), SOS changes were more driven by T D (15.7%), whereas EOS changes were more attributed to T N (21.8%). A higher response of the SOS to T D was found in more urbanized areas with higher artificial lights, while the sensitivity of the EOS to T N increased in brighter areas during nighttime. These findings indicate that vegetation’s response to rising temperatures will become dynamic, given the potential constraints by light and other attributes, calling for further assessments of its implication for terrestrial ecosystems and carbon cycle.
JiHyun Kim↗
Atomic Magnetometry Using a Metasurface Polarizing Beamsplitter in Silicon-on-Sapphire
Here, we demonstrate atomic magnetometry using a metasurface polarizing beamsplitter fabricated on a silicon-on-sapphire (SOS) platform. The metasurface splits a beam that is near-resonant with the rubidium atoms (795 nm) into orthogonal linear polarizations, enabling the measurement of magnetically sensitive circular birefringence in rubidium vapor through balanced polarimetry. We incorporated the metasurface into an atomic magnetometer based on nonlinear magneto-optical rotation and measured subnanotesla sensitivity, which is limited by low-frequency technical noise and transmission loss through the metasurface. To our knowledge, this work represents the first demonstration of SOS nanophotonics for atom-based sensing and paves the way for highly integrated, miniaturized atomic sensors with enhanced sensitivity and portability.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms
We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.
Gerchberg-Saxton↗
Intermodal microwave-to-optical transduction using silicon-on-sapphire optomechanical ring resonator
Optomechanical and electro-optomechanical systems have emerged as one of the most promising approaches for quantum microwave-to-optical transduction to interconnect distributed quantum modalities for scaling the quantum systems. These systems use suspended structures to increase mode overlap and mitigate loss to achieve high efficiency. However, the suspended design’s poor heat dissipation under strong drive limits the ultimate efficiency. Here, we demonstrate an unsuspended optomechanical ring resonator (OMR) based on the silicon-on-sapphire (SOS) platform for microwave-to-optical frequency conversion. The OMR achieves a triply resonant optical-to-optical conversion with an enhanced coupling rateG b = 3.6 gigahertz per square-root milliwatt at a peak conversion efficiency of 1.2% with 3.6-milliwatt microwave drive power and a microwave-to-optical conversion efficiency of 1.5 × 10 −5 at 10-milliwatt optical drive power. Our results show that the unsuspended SOS platform, which mitigates the thermal effect and is compatible with superconducting qubits, is a promising platform for optomechanical circuitry and quantum transduction.
Science & Technology - Other Topics↗
Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems
The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.
42 ENGINEERING↗
High-performance low-power CMOS memories using silicon-on-sapphire technology.
MOS/silicon-on-sapphire (SOS) technology is shown to permit the realization of large-scale integrated arrays that combine the best features of monolithic bipolar and MOS technologies. The perfect isolation and reduced capacitance of SOS technology make possible static MOS circuits with nearly an order-of-magnitude improvement in speed and dynamic power dissipation over their monolithic counterparts. CMOS/SOS memory arrays have been fabricated with speeds comparable to TTL bipolar memory arrays even when operated at TTL compatible levels. Quiescent power dissipation of two described arrays is typically less than 1 microwatt/bit. The SOS/MOS technology is compatible with both aluminum and self-aligned silicon-gate processing.
Boleky, E. J.↗
Design, processing, and testing of LSI arrays for space station
The development of a low power, high performance MOS 256-bit random assess memory with beam leads is discussed. Beam lead process development on silicon-on-sapphire (SOS) is also discussed, and initial electrical results on beam lead SOS TA5388 devices are presented. A comparison of the beam leaded 256-bit RAM (TA6567) layout is made with the non-beam leaded version (TA6473).
Schneider, W. C.↗
Design automation for complex CMOS/SOS LSI hybrid substrates
A design automated approach used to develop thick-film hybrid packages is described. The hybrid packages produced combine thick-film and silicon on sapphire (SOS) laser surface interaction technologies to bring the on-chip performance level of SOS to the subsystem level. Packing densities are improved by a factor of eight over ceramic dual in-line packing; interchip wiring capacitance is low. Due to significant time savings, the design automated approach presented can be expected to yield a 3:1 reduction in cost over the use of manual methods for the initial design of a hybrid.
Ramondetta, P. W.↗
CMOS array design automation techniques
The design considerations and the circuit development for a 4096-bit CMOS SOS ROM chip, the ATL078 are described. Organization of the ATL078 is 512 words by 8 bits. The ROM was designed to be programmable either at the metal mask level or by a directed laser beam after processing. The development of a 4K CMOS SOS ROM fills a void left by available ROM chip types, and makes the design of a totally major high speed system more realizable.
Lombardi, T.↗
FETSIM user's manual and example
A batch program written in FORTRAN IV which does D.C. and transient analysis of MOS circuits is presented. Circuits employing N-MOS transistors and/or P-MOS transistors in either a bulk technology or an SOS technology, or almost any combination of R-C elements may be analyzed. The program requires as input data the complete circuit topology, device parameters, process parameters, and control parameters. The user can specify initial node conditions and the input pulse format. For example, pulse rise time, fall time, width and time between succeeding pulses are all independently controllable. The program contains a sophisticated mathematical model that can accurately handle either NMOS, P-MOS, Bulk or SOS devices. Sensitivity to process changes is maintained by requiring such process parameters as threshold voltage and doping level as program inputs.
Source record↗
Forming electrical interconnections through semiconductor wafers
An information processing system based on CMOS/SOS technology is being developed by NASA to process digital image data collected by satellites. An array of holes is laser drilled in a semiconductor wafer, and a conductor is formed in the holes to fabricate electrical interconnections through the wafers. Six techniques are used to form conductors in the silicon-on-sapphire (SOS) wafers, including capillary wetting, wedge extrusion, wire intersection, electroless plating, electroforming, double-sided sputtering and through-hole electroplating. The respective strengths and weaknesses of these techniques are discussed and compared, with double-sided sputtering and the through-hole plating method achieving best results. In addition, hollow conductors provided by the technique are available for solder refill, providing a natural way of forming an electrically connected stack of SOS wafers.
Anthony, T. R.↗
Modeling of thin-film GaAs growth
A model of crystal growth is discussed that takes into account the processes of nucleation on the growing surface and also considers the processes of surface migration and desorption of adatoms. The solid on solid (SOS) model of crystal growth is represented by a rectangular array of integers where each integer represents the number of adatoms in a column perpendicular to some reference frame. The adatoms can represent atoms or molecules that are being stacked. This SOS method is used to simulate epitaxial growth of crystals. Output of the computer program developed can be graphic or quantitative.
Heinbockel, J. H.↗
Forecast skill impact of drifting buoys in the Southern Hemisphere
Two analyses are performed to evaluate the effect of drift buoys and the FGGE's special observing system (SOS) on forecasting. The FGGE analysis utilizes all level II-b conventional and special data, and the Nosat analysis employs only surface and conventional upper air data. Twelve five-day forecasts are produced from these data. An additional experiment utilizing the FGGE data base minus buoys data, and the Nosat data base including buoys data is being conducted. The forecasts are compared and synoptic evaluation of the effect of buoys data is described. The results reveal that the FGGE data base with the SOS significantly improves forecasting in the Southern Hemisphere and the loss of buoys data does not have a great effect on forecasting. The Nosat data has less impact on forecasting; however, the addition of buoys data provides an improvement in forecast skills.
Kalnay, E.↗
Results from teleoperated free-flying spacecraft simulations in the Martin Marietta space operations simulator lab
To augment the capabilities of the Space Transportation System, NASA has funded studies and developed programs aimed at developing reusable, remotely piloted spacecraft and satellite servicing systems capable of delivering, retrieving, and servicing payloads at altitudes and inclinations beyond the reach of the present Shuttle Orbiters. Since the mid 1970's, researchers at the Martin Marietta Astronautics Group Space Operations Simulation (SOS) Laboratory have been engaged in investigations of remotely piloted and supervised autonomous spacecraft operations. These investigations were based on high fidelity, real-time simulations and have covered a wide range of human factors issues related to controllability. Among these are: (1) mission conditions, including thruster plume impingements and signal time delays; (2) vehicle performance variables, including control authority, control harmony, minimum impulse, and cross coupling of accelerations; (3) maneuvering task requirements such as target distance and dynamics; (4) control parameters including various control modes and rate/displacement deadbands; and (5) display parameters involving camera placement and function, visual aids, and presentation of operational feedback from the spacecraft. This presentation includes a brief description of the capabilities of the SOS Lab to simulate real-time free-flyer operations using live video, advanced technology ground and on-orbit workstations, and sophisticated computer models of on-orbit spacecraft behavior. Sample results from human factors studies in the five categories cited above are provided.
Hartley, Craig S.↗
Neutral line chaos and phase space structure
Phase space structure and chaos near a neutral line are studied with numerical surface-of-section (SOS) techniques and analytic methods. Results are presented for a linear neutral line model with zero crosstail electric field. It was found that particle motion can be divided into three regimes dependening on the value of the conserved canonical momentum, Py, and the conserved Hamiltonian, h. The phase space structure, using Poincare SOS plots, is highly sensitive to bn = Bn/B0 variations, but not to h variations. It is verified that the slow motion preserves the action, Jz, as evaluated by Sonnerup (1971), when the period of the fast motion is smaller than the time scale of the slow motion. Results show that the phase space structure and particle chaos depend sensitively upon Py and bn, but are independent of h.
Burkhart, Grant R.↗
Mutation induction in bacteria after heavy ion irradiation
From a compilation of experimental data on the mutagenic effects of heavy ions in bacteria, main conclusions have been drawn as follows: (1) The mutagenic efficacy of heavy ions in bacteria depends on physical and biological variables. Physical variables are the radiation dose, energy and charge of the ion; the biological variables are the bacterial strain, the repair genotype of bacteria, and the endpoint investigated (type of mutation, induction of enzymes related to mutagenesis); (2) The responses on dose or fluence are mainly linear or linear quadratic. The quadratic component, if found for low LET radiation, is gradually reduced with increasing LET; (3) At low values of Z and LET the cross section of mutation induction sigma m (as well as SOS response, sigma sos. and lambda phage induction, sigma lambda versus LET curves can be quite consistently described by a common function which increases up to approximately 100 keV/mu m. For higher LET values, the sigma(m) versus LET curves show the so-called 'hooks' observed also for other endpoints; (4) For light ions (Z is less than or equal to 4), the cross sections mostly decrease with increasing ion energy, which is probably related to the decrease of the specific energy departed by the ion inside the sensitive volume (cell). For ions in the range of Z = 10, sigma(m) is nearly independent on the ion energy. For heavier ions (Z is greater than or equal to 16), sigma(m) increases with the energy up to a maximum or saturation around 10 MeV/u. The increment becomes steeper with increasing atomic number of the ion. It correlates with the increasing track radius of the heavy ion; (5) The mutagenic efficiency per lethal event changes slightly with ion energy, if Z is small indicating a rough correlation between cellular lethality and mutation induction, only. For ions of higher Z this relation increases with energy, indicating a change in the 'mode' of radiation action from 'killing-prone' to 'mutation-prone'; and (6) Repair genotype substantially influences the radiation induced mutagenesis. Different mechanisms of mutation induction and/or different types of biologically significant lesions in wild type cells compared to repair deficient strains are a likely explanation.
Horneck, G.↗
SIM Configuration Evolution
The Space Interferometry Mission (SIM) is a space-based 10 m baseline Michelson interferometer. Planned for launch in 2005 aboard a Delta III launch vehicle, or equivalent, its primary objective is to measure the positions of stars and other celestial objects with an unprecedented accuracy of 4 micro arc seconds. With such an instrument, tremendous advancement can be expected in our understanding of stellar and galactic dynamics. Using triangulation from opposite sides of the orbit around the sun (i.e. by using parallax) one can measure the distance to any observable object in our galaxy. By directly measuring the orbital wobble of nearby stars, the mass and orbit of planets can be determined over a wide range of parameters. The distribution of velocity within nearby galaxies will be measurable. Observations of these and other objects will improve the calibration of distance estimators by more than an order of magnitude. This will permit a much better determination of the Hubble Constant as well as improving our overall understanding of the evolution of the universe. SIM has undergone several transformations, especially over the past year and a half since the start of Phase A. During this phase of a project, it is desirable to perform system-level trade studies, so the substantial evolution of the design that has occurred is quite appropriate. Part of the trade-off process has addressed two major underlying architectures: SIM Classic; and Son of SIM. The difference between these two architectures is related to the overall arrangement of the optical elements and the associated metrology system. Several different configurations have been developed for each architecture. Each configuration is the result of design choices that are influenced by many competing considerations. Some of the more important aspects will be discussed. The Space Interferometry Mission has some extremely challenging goals: millikelvin thermal stability, nanometer stabilization of optics, picometer measurement of wavefront, and others. In order to meet these goals, a significant amount of technological development is required. Although there has been a program operating for about a decade developing technologies specifically to address the challenges of space-based interferometry, there still remains a tremendous effort to achieve the incredible accuracy required of SIM. The projected viability of some of these areas has influenced design choices during the evolution of the many configurations that have been developed. For instance, the perceived complexity of the IR laser metrology system used to measure and control the positions of key optical elements was the strongest discriminator between the two architectures, and led to a decision to select SOS rather than Classic in early 1998. More recently, an appreciation of the sensitivity to beam-walk within the SOS architecture is forcing a reconsideration of that decision. At the time of submission of this abstract, there is some hope that a full-aperture metrology system may alleviate this issue. In addition to describing the current configuration of SIM, the influence of a few selected areas on the evolution of the configuration will be discussed.
Aaron, Kim M.↗