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NASA NTRS2015

Flexible Electrostatic Technologies for Capture and Handling, Phase 1

Fundamental to many of NASA's in-space transportation missions is the capture and handling of various objects and vehicles in various orbits for servicing, debris disposal, sample retrieval, and assembly without the benefit of sufficient grapple fixtures and docking ports. To perform similar material handling tasks on Earth, pincher grippers, suction grippers, or magnetic chucks are used, but are unable to reliably grip aluminum and composite spacecraft, insulation, radiators, solar arrays, or extra-terrestrial objects in the vacuum of outer space without dedicated handles in the right places. The electronic Flexible Electrostatic Technologies for space Capture and Handling (FETCH) will enable reliable and compliant gripping (soft dock) of practically any object in various orbits or surfaces without dedicated mechanical features, very low impact capture, and built-in proximity sensing without any conventional actuators. Originally developed to handle semiconductor and glass wafers during vacuum chamber processing without contamination, the normal rigid wafer handling chucks are replaced with thin metal foil segments laminated in flexible insulation driven by commercial off-the-shelf solid state, high-voltage power supplies. Preliminary testing in NASA Marshall Space Flight Center's (MSFC's) Flat Floor Robotics Lab demonstrated compliant alignment and gripping with a full-sized, 150-lb microsat mockup and translation before a clean release with a flip of a switch. The flexible electrostatic gripper pads can be adapted to various space applications with different sizes, shapes, and foil electrode layouts even with openings through the gripper pads for addition of guidance sensors or injection of permanent adhesives. With gripping forces estimated between 0.5 and 2.5 lb/in2 or 70-300 lb/ft2 of surface contact, the FETCH can turn on and off rapidly and repeatedly to enable sample handling, soft docking, in-space assembly, precision relocation, and surface translation for accurate anchoring.

Bryan, Thomas↗

NASA NTRS1980

Study of digital charge coupled devices

Charge coupled devices represent unique usage of the metal oxide semiconductor concept. These devices can sample an AC signal at the input, transfer charge proportional to this signal through the CCD shift register and then provide an output of the same frequency and shape as the input. The delay time between input and output is controlled by the CCD operating frequency and the number of stages in the shift resistor. This work is a reliability evaluation of the buried channel and surface channel CCD technologies. The constructions are analyzed, failure modes are described, and test results are reported.

Wilson, D. D.↗

NASA NTRS1983

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing.

Lathrop, J. W.↗

NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗

NASA NTRS1971

Reliability improvement of 1 mil aluminum wire bonds for semiconductors, technical performance summary

The reliability of semiconductor devices as influenced by the reliability of wire bonds used in the assembly of the devices is investigated. The specific type of failure dealt with involves fracture of wire bonds as a result of repeated flexure of the wire at the heel of the bond when the devices are operated in an on-off mode. The mechanism of failure is one of induced fracture of the wire. To improve the reliability of a chosen transistor, one-mil diameter wires of aluminum with various alloy additions were studied using an accelerated fatigue testing machine. In addition, the electroprobe was used to study the metallurgy of the wires as to microstructure and kinetics of the growth of insoluble phases. Thermocompression and ultrasonic bonding techniques were also investigated.

Source record↗

NASA NTRS2013

High-Speed, High-Resolution Time-to-Digital Conversion

This innovation is a series of time-tag pulses from a photomultiplier tube, featuring short time interval between pulses (e.g., 2.5 ns). Using the previous art, dead time between pulses is too long, or too much hardware is required, including a very-high-speed demultiplexer. A faster method is needed. The goal of this work is to provide circuits to time-tag pulses that arrive at a high rate using the hardwired logic in an FPGA - specifically the carry chain - to create what is (in effect) an analog delay line. High-speed pulses travel down the chain in a "wave." For instance, a pulse train has been demonstrated from a 1- GHz source reliably traveling down the carry chain. The size of the carry chain is over 10 ns in the time domain. Thus, multiple pulses will travel down the carry chain in a wave simultaneously. A register clocked by a low-skew clock takes a "snapshot" of the wave. Relatively simple logic can extract the pulses from the snapshot picture by detecting the transitions between logic states. The propagation delay of CMOS (complementary metal oxide semiconductor) logic circuits will differ and/or change as a result of temperature, voltage, age, radiation, and manufacturing variances. The time-to-digital conversion circuits can be calibrated with test signals, or the changes can be nulled by a separate on-die calibration channel, in a closed loop circuit.

Katz, Richard↗

NASA NTRS1983

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Results of an ongoing research program into the reliability of terrestrial solar cells are presented. Laboratory accelerated testing procedures are used to identify failure/degradation modes which are then related to basic physical, chemical, and metallurgical phenomena. In the most recent tests, ten different types of production cells, both with and without encapsulation, from eight different manufacturers were subjected to a variety of accelerated tests. Results indicated the presence of a number of hitherto undetected failure mechanisms, including Schottky barrier formation at back contacts and loss of adhesion of grid metallization. The mechanism of Schottky barrier formation is explained by hydrogen, formed by the dissociation of water molecules at the contact surface, diffusing to the metal semiconductor interface. This same mechanism accounts for the surprising increase in sensitivity to accelerated stress conditions that was observed in some cells when encapsulated.

Lathrop, J. W.↗

NASA NTRS1994

Ampoule failure sensor development for semiconductor crystal growth experiments

Currently there are no devices to detect an ampoule failure in semiconductor crystal growth experiments. If an ampoule fails, it will go undetected until the containing cartridge is breached due to chemical degradation. The experiment will then be terminated resulting in a failed experiment and a loss of data. The objective of this research was to develop a reliable failure sensor that would detect a specific liquid or vapor material before the metallic cartridge is degraded and the processing furnace contaminated. The sensor is a chemical fuse made from a metal with which the semiconductor material reacts more rapidly than it does with the containing cartridge. Upon ampoule failure, the sensor is exposed to the vapor or liquid semiconductor and the chemical reaction causes a resistance change in the sensor material. The sensor shows a step change in resistance on the order of megohms when exposed to mercury zinc telluride (HgZnTe), mercury cadmium telluride (HgCdTe), or gallium arsenide (GaAs). This ampoule failure sensor is being tested for possible use on the second United States Microgravity Mission (USML-2) and is the subject of a NASA patent application.

CHEMICAL FUSE↗

NASA NTRSDate not supplied

Comparison of a Probabilistic TID Hardness Assurance Method to Military Standards

The rapid evolution of electronics has heralded countless benefits to humanity, enabling increases in computing power while decreasing costs. However, the constantly changing semiconductor device landscape proves to be an immense challenge for the reliability community, especially for those concerned with radiation effects on microelectronics. Changes in device manufacturing, from device structure to processing steps, may and often do change the way the device responds to radiation. While radiation hardened parts are not as much of a reliability concern, they also lag behind commercial off-the-shelf, or COTS, parts in terms of computing capabilities, some by over a decade. Many missions may have no choice but to utilize COTS. As such, these missions need to ensure their parts are reliable in the face of total ionizing dose (TID). However, part and testing facility costs limit the amount of testing possible.

Chloe Champagne↗

NASA NTRS2013

Effects of Thermal Cycling on Control and Irradiated EPC 2nd Generation GaN FETs

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling in order to address their reliability for use in space missions. Results of the experimental work are presented and discussed.

field effect transistor↗

NASA NTRS2004

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.↗

NASA NTRS2011

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗

NASA NTRS1982

A lightweight electronically commutated dc motor for electric passenger vehicles

A functional model breadboard converter and a rare-earth-cobalt, permanent magnet motor; as well as an engineering model converter and PM motor suitable for vehicle installations were developed and tested. The converter and motor achieved an 88% peak efficiency, a maximum output of 26 kW at 26,000 rpm, and a continuous rating of 15 kW. The system also generated power to the source during braking, with a demonstrated peak power available at the converter terminals of approximately 26 kW at 88% efficiency. Major conclusions include: (1) the SAE J227a(D) driving cycle efficiency for the converter/motor is 86% to 88% when energy available for recovery at the converter terminals is included; (2) the converter initial cost is approximately five times that of the permanent magnet motor, but can be reduced by means of LSI logic and integrated liquid cooled semiconductor packages; and (3) an electronically commutated motor with a liquid cooled converter will operate reliably without service or maintenance for the life of a passenger vehicle.

Echolds, E. F.↗

NASA NTRS2004

LERCIP 2004 Summary

This summer I am continuing my project from the previous two summers. My work involves ohmic contacts to N-type silicon carbide (Sic) devices. My mentor, Dr. Robert Okojie, is developing the technology behind high performance sensors and actuators for harsh environments. Sic is useful because it is able to operate at temperatures up to 600 C and it is resistant to radiation damage. This allows sensors and electronics to be placed in new locations, such as inside a jet engine or in space application without using heavy shielding. Ultimately this results in more efficient, smarter engine technology, reduced launch weights for spacecraft, and high power and high temperature electronics. A fundamental part of Sic devices is the ohmic contact. The contact is the interface between the semiconductor (Sic) and external circuitry. The current flowing in and out the devices is through the contact. Ensuring that these contacts remain ohmic (linear I-V behavior) allows us to fabricate devices that do not waste power at the metallurgical junction. Another key part is maintaining a low contact resistance. It is desired to maintain minimum energy loss by avoiding a rectifying electrical characteristic. My project is to develop and implement a testing procedure for measuring the contact resistance while the device is operating at high temperature. It is important to measure the contacts while simulating the true operating environment as closely as possible. For this reason, measurements are taken while the device is heated at intervals up to 600 C in air. To test the long tern reliability of the devices, the high temperature measurements are repeated after heating the sample for long intervals in air. A new set of data is gathered after heating for a total of 100, 200 and then 400 hours. The current as a function of voltage and the contact resistance was measured using the four point probe technique. The four point probe method is chosen because it measures contact resistance while eliminating error due to wire resistance and calibration issues.

DeAngelis, David↗

NASA NTRS1989

Solid state lasers for use in non-contact temperature measurements

The last decade has seen a series of dramatic developments in solid state laser technology. Prominent among these has been the emergence of high power semiconductor laser diode arrays and a deepening understanding of the dynamics of solid state lasers. Taken in tandem these two developments enable the design of laser diode pumped solid state lasers. Pumping solid state lasers with semiconductor diodes relieves the need for cumbersome and inefficient flashlamps and results in an efficient and stable laser with the compactness and reliability. It provides a laser source that can be reliably used in space. These new coherent sources are incorporated into the non-contact measurement of temperature. The primary focus is the development and characterization of new optical materials for use in active remote sensors of the atmosphere. In the course of this effort several new materials and new concepts were studied which can be used for other sensor applications. The general approach to the problem of new non-contact temperature measurements has had two components. The first component centers on passive sensors using optical fibers; an optical fiber temperature sensor for the drop tube was designed and tested at the Marshall Space Flight Center. Work on this problem has given insight into the use of optical fibers, especially new IR fibers, in thermal metrology. The second component of the effort is to utilize the experience gained in the study of passive sensors to examine new active sensor concepts. By active sensor are defined as a sensing device or mechanism which is interrogated in some way be radiation, usually from a laser. The status of solid state lasers as sources for active non-contact temperature sensors are summarized. Some specific electro-optic techniques are described which are applicable to the sensor problems at hand. Work on some of these ideas is in progress while other concepts are still being worked out.

Buoncristiani, A. M.↗

NASA NTRS2015

Use of Proton SEE Data as a Proxy for Bounding Heavy-Ion SEE Susceptibility

Although heavy-ion single-event effects (SEE) pose serious threats to semiconductor devices in space, many missions face difficulties testing such devices at heavy-ion accelerators. Low-cost missions often find such testing too costly. Even well funded missions face issues testing commercial off the shelf (COTS) due to packaging and integration. Some missions wish to fly COTS systems with little insight into their components. Heavy-ion testing such parts and systems requires access to expensive and hard-to-access ultra-high energy ion accelerators, or significant system modification. To avoid these problems, some have proposed using recoil ions from high-energy protons as a proxy to bound heavy-ion SEE rates.

reliability estimation↗

NASA NTRS1991

Leo space plasma interactions

Photovoltaic arrays interact with the low earth orbit (LEO) space plasma in two fundamentally different ways. One way is the steady collection of current from the plasma onto exposed conductors and semiconductors. The relative currents collected by different parts of the array will then determine the floating potential of the spacecraft. In addition, these steady state collected currents may lead to sputtering or heating of the array by the ions or electrons collected, respectively. The second kind of interaction is the short time scale arc into the space plasma, which may deplete the array and/or spacecraft of stored charge, damage solar cells, and produce EMI. Such arcs only occur at high negative potentials relative to the space plasma potential, and depend on the steady state ion currents being collected. New high voltage solar arrays being incorporated into advanced spacecraft and space platforms may be endangered by these plasma interactions. Recent advances in laboratory testing and current collection modeling promise the capability of controlling, and perhaps even using, these space plasma interactions to enable design of reliable high voltage space power systems. Some of the new results may have an impact on solar cell spacing and/or coverslide design. Planned space flight experiments are necessary to confirm the models of high voltage solar array plasma interactions. Finally, computerized, integrated plasma interactions design tools are being constructed to place plasma interactions models into the hands of the spacecraft designer.

Ferguson, Dale C.↗

NASA NTRS2000

Reliable, Low-Cost, Low-Weight, Non-Hermetic Coating for MCM Applications

Through an Air Force Research Laboratory sponsored STM program, reliable, low-cost, low-weight, non-hermetic coatings for multi-chip-module(MCK applications were developed. Using the combination of Sandia Laboratory ATC-01 test chips, AvanTeco's moisture sensor chips(MSC's), and silicon slices, we have shown that organic and organic/inorganic overcoatings are reliable and practical non-hermetic moisture and oxidation barriers. The use of the MSC and unpassivated ATC-01 test chips provided rapid test results and comparison of moisture barrier quality of the overcoatings. The organic coatings studied were Parylene and Cyclotene. The inorganic coatings were Al2O3 and SiO2. The choice of coating(s) is dependent on the environment that the device(s) will be exposed to. We have defined four(4) classes of environments: Class I(moderate temperature/moderate humidity). Class H(high temperature/moderate humidity). Class III(moderate temperature/high humidity). Class IV(high temperature/high humidity). By subjecting the components to adhesion, FTIR, temperature-humidity(TH), pressure cooker(PCT), and electrical tests, we have determined that it is possible to reduce failures 50-70% for organic/inorganic coated components compared to organic coated components. All materials and equipment used are readily available commercially or are standard in most semiconductor fabrication lines. It is estimated that production cost for the developed technology would range from $1-10/module, compared to $20-200 for hermetically sealed packages.

Jones, Eric W.↗