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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

New Technology CZT Detectors for High-Energy Flare Spectroscopy: The Room Temperature Semiconductor Spectrometer for JAWSAT

The goal of our Room Temperature Semiconductor Spectrometer (RTeSS) project is to develop a small high-energy solar flare spectrometer employing semiconductor detectors that do not require significant cooling when used as high-energy solar flare spectrometers. Specifically, the goal is to test Cadmium Zinc Telluride (CZT) detectors with coplanar grid electrodes as x-ray and gamma-ray spectrometers and to design an experiment that can be flown as a "piggy-back" payload on a satellite mission during the next solar maximum.

Vestrand, W. Thomas↗
DOE OSTI2023

PIXEL2020: Tenth International Workshop on Semiconductor Pixel Detectors for Particles and Imaging

This workshop covers various topics related to pixel detector technology. Development and applications will be discussed for charged particle tracking in High Energy Physics, Nuclear Physics, Astrophysics, and X-ray imaging in Astronomy, Biology, Medicine and Material Science. The conference program will also include reports on front and back end electronics, radiation effects, low mass mechanics and construction techniques, and new technologies such as monolithic and 3D integrated detectors.

Sally, Seidel↗
NASA NTRS1992

Reflections From Plasma Would Enhance Infrared Detector

Quantum efficiency of proposed photoemission semiconductor detector of long-wavelength infrared radiation enhanced by multiple passes of radiation. Device has features of back-to-back heterojunction internal-photoemission (HIP) detector, and Fabry-Perot interferometer. Arrays of devices of this type incorporated into integrated-circuit infrared imaging devices.

Maserjian, Joseph↗
DOE OSTI2020

Synchrotron characterization of high-Z, current-mode x-ray detectors

Fast x-ray detectors are critical tools in pulsed power and fusion applications, where detector impulse response of a nanosecond or better is often required. Semiconductor detectors can create fast, sensitive devices with extensive operational flexibility. There is typically a trade-off between detector sensitivity and speed, but higher atomic number absorbers can increase hard x-ray absorption without increasing the charge collection time, provided carriers achieve high velocity. This paper presents x-ray pulse characterization conducted at the Advanced Photon Source of x-ray absorption efficiency and temporal impulse response of current-mode semiconductor x-ray detectors composed of Si, GaAs, and CdTe.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Demonstration of Energy-Resolved γ-Ray Detection at Room Temperature by the CsPbCl 3 Perovskite Semiconductor

The detection of gamma-rays at room temperature with high-energy resolution using semiconductors is one of the most challenging applications. The presence of even the smallest amount of defects is sufficient to kill the signal generated from gamma-rays which makes the availability of semiconductors detectors a rarity. Lead halide perovskite semiconductors exhibit unusually high defect tolerance leading to outstanding and unique optoelectronic properties and are poised to strongly impact applications in photoelectric conversion/detection. Here we demonstrate for the first time that large size single crystals of the all-inorganic perovskite CsPbCl 3 semiconductor can function as a high-performance detector for gamma-ray nuclear radiation at room temperature. CsPbCl 3 is a wide-gap semiconductor with a bandgap of 3.03 eV and possesses a high effective atomic number of 69.8. We identified the two distinct phase transitions in CsPbCl 3 , from cubic (Pm-3m) to tetragonal (P4/mbm) at 325 K and finally to orthorhombic (Pbnm) at 316 K. Despite crystal twinning induced by phase transitions, CsPbCl 3 crystals in detector grade can be obtained with high electrical resistivity of similar to 1.7 X 10 9 Ω∙cm. The crystals were grown from the melt with volume over several cubic centimeters and have a low thermal conductivity of 0.6 W m -1 K -1 . The mobilities for electron and hole carriers were determined to similar to 30 cm 2 /(V s). Using photoemission yield spectroscopy in air (PYSA), we determined the valence band maximum at 5.66 +/- 0.05 eV. Under gamma-ray exposure, our Schottky-type planar CsPbCl 3 detector achieved an excellent energy resolution (similar to 16% at 122 keV) accompanied by a high figure-of-merit hole mobility-lifetime product (3.2 x 10 -4 cm 2 /V) and a long hole lifetime (16 mu s). The results demonstrate considerable defect tolerance of CsPbCl 3 and suggest its strong potential for gamma-radiation and X-ray detection at room temperature and above.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Laser Scribing for Electrode Patterning of Perovskite Spectrometer-Grade CsPbBr 3 Gamma-ray Detectors

Making semiconductor radiation detectors that work at room temperature relies heavily on the deposition and pixelation of electrodes. Electrode patterning of perovskite solar cells widely implements laser scribing techniques, which is a convenient, scalable, and inexpensive technique. However, this method has not found its application in radiation detector patterning yet, and the question whether laser scribing can achieve high-quality patterns with minimum damage to a detector crystal and low interpixel cross-talk remains largely unanswered. To prove that laser scribing is a practical method for electrode patterning on perovskite CsPbBr 3 detectors, we use the material to create a variety of patterns. A very low lateral leakage current (60 nA at 10 V) and high mobility-lifetime product (9.7(3) x 10 -4 cm 2 /V) were observed between the pixel and the guard ring in tests of single-pixel devices with a separation of 200 or 100 μm between the central electrode and the guard ring. The 122 and 136 keV photopeaks in 57 Co gamma-ray spectra were very well resolved with an energy resolution of up to 6.1% at 122 keV. Finally, a further reduction in gap size to 50 mu m is conceivable, but more process optimization is needed.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2018

Development of Transition Edge Sensor Detectors Optimized for Single-Photon Spectroscopy in the Optical and Near-Infrared

The search for biosignatures in the atmospheres of exoplanets will be a key focus of future space telescopes that operate in the ultraviolet, visible, and near-infrared bands. Detection of biosignatures requires an instrument with moderate spectral resolving power ($R \sim 100$) and a large bandwidth ($\sim 400$ nm -- $\sim 1.8$ $\mu$m). Additionally, biosignature detection is a photon-starved science; instruments designed for these measurements would ideally combine high optical efficiency with quantum-limited photon detectors (i.e., detectors that exhibit zero dark current). In this work, we report on our efforts to develop energy resolving transition edge sensor (TES)-based detectors designed for biosignature detection. TESs operated as microcalorimeters are compelling detectors for this application. Unlike semiconductor detectors, TESs eliminate the need for dispersive optics and are truly single photon detectors -- fundamental TES noise yields uncertainty in the energies of detected photons, not in the number of detected photons. We introduce TESs designed for this application and discuss the path toward realizing a TES-based dispersionless spectrometer optimized for biosignature detection.

Instrumentation and Photography↗
NASA NTRS2018

Development of Transition Edge Sensor Detectors Optimized for Single-Photon Spectroscopy in the Optical and Near-Infrared

The search for biosignatures in the atmospheres of exoplanets will be a key focus of future space telescopes that operate in the ultraviolet, visible, and near-infrared bands. Detection of biosignatures requires an instrument with moderate spectral resolving power (R ~ 100) and a large bandwidth (~ 400 nm – ~ 1.8 µm). Additionally, biosignature detection is a photon-starved science; instruments designed for these measurements would ideally combine high optical efficiency with quantum-limited photon detectors (i.e., detectors that exhibit zero dark current). In this work, we report on our efforts to develop energy resolving transition edge sensor (TES)-based detectors designed for biosignature detection. TESs operated as microcalorimeters are compelling detectors for this application. Unlike semiconductor detectors, TESs eliminate the need for dispersive optics and are truly single photon detectors – fundamental TES noise yields uncertainty in the energies of detected photons, not in the number of detected photons. We introduce TESs designed for this application and discuss the path toward realizing a TES-based dispersionless spectrometer optimized for biosignature detection.

Instrumentation and Photography↗
DOE OSTI2023

Using 3D position sensitivity to reveal response non-uniformities in CdZnTe, TlBr, and CsPbBr 3 detectors

Position sensitivity enables the correction of response non-uniformities in room-temperature semiconductor detectors caused by crystal defects and other factors. It can also be used to pinpoint the exact location of crystal defects responsible for the response variations. This work describes a technique for revealing and visualizing the detector regions affecting the charge collection efficiency in CdZnTe (CZT), TlBr, and CsPbBr 3 detectors configured as position-sensitive virtual Frisch-grid (VFG) devices. The technique correlates the photopeak events in energy spectra with their spatial distributions inside the detectors using the position information. By selecting the events from narrow energy intervals within a photopeak, we can visualize the detector volumes with particular charge collection efficiencies, which, in turn, correlate with the locations of electrode and crystal defects. Here, we demonstrate this technique in several examples. Columnar structures in the volume plots (position distribution maps) are consistent with signal losses near or at the anode in selected samples of CZT and TlBr. Structures exhibiting a distinct depth dependence are consistent with grain boundaries or other crystal defects.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2023

Demonstrating Safeguards Applications of DRiFT Gas Detector Capabilities [Slides]

DRiFT, a Detector Response Function Toolkit, post-processes MCNP output to model detector response. Three primary components: scintillator (focus of FY 21 TED work), gas detectors (focus of this FY), and semiconductor detectors. Capability to model scintillator detectors has previously been demonstrated.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

CdZnTeSe: Recent advances for radiation detector applications

The quest for cost-effective, high performing room temperature semiconductor detector (RTSD) materials for high energy gamma rays has been continuing for more than three decades. The requirements for RTSD materials, however, are more stringent as compared to other applications unrelated to detection of X- and gamma-rays, mainly due to the requirement of thick detectors for sufficient absorption of high-energy electromagnetic radiation and excellent charge-transport properties. The II-VI compound CdZnTe (CZT) with the composition of 10 atomic % Zn (Cd0.9Zn0.1Te) has been the material of choice over the past several years, and it has dominated the commercial market for RTSD materials and detectors. Despite its commercial success as a room temperature radiation detection material, CZT suffers from a lack of compositional homogeneity on both a micro- and macro-scale and the presence of high concentrations of sub-grain boundary (dislocation walls) networks and secondary phases (Te-rich inclusions). This chapter focuses on the presence of performance-limiting defects in CZT that hinder the yield and elevate the cost of high-quality detectors. The presence of such performance-limiting defects has restricted widespread deployment of CZT for a variety of potential applications, particularly for uses of relatively large detectors where the demands on material perfection are significantly greater. In the recent past, replacing some of the tellurium with selenium in the CZT matrix was found to be very effective in drastically reducing the Te-rich secondary phases and dislocation networks, plus

Roy, Utpal N.↗