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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Carbon-Nanotube-Based Chemical Gas Sensor

Conventional thermal conductivity gauges (e.g. Pirani gauges) lend themselves to applications such as leak detectors, or in gas chromatographs for identifying various gas species. However, these conventional gauges are physically large, operate at high power, and have a slow response time. A single-walled carbon-nanotube (SWNT)-based chemical sensing gauge relies on differences in thermal conductance of the respective gases surrounding the CNT as it is voltage-biased, as a means for chemical identification. Such a sensor provides benefits of significantly reduced size and compactness, fast response time, low-power operation, and inexpensive manufacturing since it can be batch-fabricated using Si integrated-circuit (IC) process technology.

Kaul, Arunpama B.↗

Generalized energetics for linear and nonlinear symmetric instabilities

The generalized energy conservation integral is applied to linear and nonlinear symmetric instabilities (SIs) and conditional symmetric instabilities (CSIs) in uniform and nonuniform basic states. The generalized energy conservation integral for linear SI in nonuniform basic state is refined to include initial thermal-inertial perturbations. A generalized conservation integral is derived for a nonlinear SI with uniform and nonuniform basic states. The integral reveals that: (1) the stability conditions of nonlinear and linear SI are not the same; (2) when the basic state is symmetrically stable the nonlinear evolution of a symmetric disturbance is energetically bounded by its initial energy; and (3) when the basic state is symmetrically unstable the growth of the symmetric perturbation is approximated by the linear SI theory. Precipitative heating is incorporated into the generalized energy integral for nonlinear CSI; the relation between nonlinear evolution of a CSI circulation and precipitative heating is examined.

Xu, Q.↗

Integrated Silicon Platform for Co-planar Design of Vertically Stacked 2.06 THz Mixer Module

The process for fabricating and utilizing the threedimensional Si stack receiver front-end is described in this paper. The capability to have exact dimensionality becomes essential as frequency scales due to the complexity arising in assembly and finer tolerances. Total process yields can be improved through Si fabrication by verifying achievement of specified tolerances lithographically and compatibility to rapid process changes and design fine-tuning. The integrated Si platform with the mounted device is shown in Figure 1. Signal I/O and alignment modalities enable lownoise measurements. Silicon micromachining provides the necessary accuracy for integration at the several THz regime. Particularly, processing and etch recipes have demonstrated smooth surfaces of < 1 μm surface roughness. In consideration is pre-compensating for minute offsets, matching mechanical strain on all interfaces, and including passive alignment verification in the design. As compared to metal blocks, computer numerical controlled (CNC) milling can produce slight burrs in the interfaces resulting in misalignment and resultant strain between two pieces of components. Furthermore, Si integration can make possible arrays of pixel transceivers through compact subsystems for the purpose of measuring multiple lines of spectral content simultaneously in space.

Mehdi, Imran↗

Research and development of low cost processes for integrated solar arrays

Si reduction, purification and sheet generation work has been concentrated on gaining information about a reduction process combined with purification (higher purity arc furnace with gas blowing and gradient freezing), transport process with purification and polycrystal sheet growth potential (SiF2), plastic deformation for sheet generation, and float zone sheet recrystallization.

Wolf, M.↗

Stray Light Modeling of the James Webb Space Telescope (JWST) Integrated Science Instrument Module (ISIM)

This paper describes an integrated stray light model of each Science Instrument (SI) in the Integrated Science Instrument Module (ISIM) of the James Webb Space Telescope (JWST) and the Optical Telescope Element Simulator (OSIM), the light source used to characterize the performance of ISIM in cryogenic-vacuum tests at the Goddard Space Flight Center (GSFC). We present three cases where this stray light model was integral to solving questions that arose during the testing campaign - 1) ghosting and coherent diffraction from hardware surfaces in the Near Infrared Imager and Slitless Spectrograph (NIRISS) GR700XD grism mode, 2) ghost spots in the Near Infrared Camera (NIRCam) GRISM modes, and 3) scattering from knife edges of the NIRCam focal plane array masks.

stray light modeling↗

A framework for understanding efficient diurnal CO 2 reduction using Si and GaAs photocathodes

Integrated solar fuels and photoelectrochemical (PEC) CO 2 reduction (CO 2 R) are promising pathways toward producing value-added chemicals from CO 2 . However, improvements are needed in activity and selectivity as well as in fundamental understanding of device behavior to engender wide deployment. Here, we report two single-junction, integrated photocathodes for PEC CO 2 R based on TOPCon Si and GaAs substrates, which achieve -10 mA cm -2 at -0.33 V vs. RHE with 41% selectivity to C 2+ products and at -0.03 V vs. RHE with 27% selectivity to C 2+ products, respectively. We investigated the viability of a light-mediated strategy to direct selectivity in buried-junction PEC devices and confirmed that these devices could be optimized independently and described by the physics-based models of the individual components. Finally, we designed a framework to assess operational modes for PEC CO 2 R devices and demonstrated this framework under continuous galvanostatic control and variable illumination conditions.

14 SOLAR ENERGY↗

Three-Dimensional Integration of Functional Oxides and Crystalline Silicon for Optical Neuromorphic Computing Using Nanometer-Scale Oxygen Scavenging Barriers

Dating to the first reports of epitaxial oxide deposition on Si(001), the integration of complex oxides on silicon has been a fast-moving area of research, where fundamental materials physics is intimately connected to tremendous technological promise in such areas as integrated electronics, optical neuromorphic and quantum computing, and sensing, to name a few. Despite their great promise, devices relying on the co-integration of silicon and epitaxial perovskites are typically limited to basic, planar geometries due to practical issues with their fabrication. In this paper, we overcome these long-standing challenges by developing a method to produce high-quality Si(001)/TMO/Si(001)/TMO heterostructures without wafer bonding, resulting in the straightforward three-dimensional integration of functional complex oxides and active Si(001) layers into a technologically relevant platform that is needed for on-chip hardware implementations of neuromorphic computing based on optical signals. We present detailed structural and chemical characterization of our heterostructures and discuss generalized design rules for their fabrication. Our results exponentially expand the universe of practically achievable TMO-based integrated devices and push this promising class of materials closer to realizing their full technological potential.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Design of Si micro-cone light concentrators for heterogeneous integration with MWIR FPAs

Using 3-D finite difference time domain (FDTD) modeling, it is shown that micro-cone arrays obtained by anisotropic wet etching of Si have high potential for concentrating light on compact photodetector mesas of mid-wave infrared (MWIR) focal plane arrays (FPAs). The proposed structures can be heterogeneously integrated with FPAs possessing high quantum efficiency. They can be used to reduce the thermal noise and, potentially, increase the operating temperature of FPAs while maintaining high sensitivity of the photodetectors.

Astratov, Vasily N.↗

Development of a Distribution Optimal Power Flow Federate for Open-Source OEDI-SI Platform

Increasing numbers of distributed generators in the electric power distribution networks require developing a control strategy to optimize solutions in real time. Linearized optimal distribution flow development has seen growth and acceptance in the distribution systems literature for efficiently modeling the \glspl{opf} for distribution systems. This paper examines the implementation and integration procedure for linearized optimal distribution flow federate to \gls{oedisi} platform. Specifically, we discuss i) the usage of the \gls{oedisi} platform, ii) obtaining a tractable solution using developed \gls{opf} federate, and iii) validation of solutions and bench-marking the \gls{oedisi} platform with developed \gls{opf} federate using OpenDSS. In brief, we demonstrate how a general linearized optimal distribution flow federate can be developed and integrated with a co-simulation environment to mimic real-world examples. The efficacy of the proposed method is demonstrated using the IEEE 123-bus test system under different scenarios to obtain a tractable solution and compare its results.

Sadnan, Rabayet↗

Mitigating Calendar Aging in Si-NMC Batteries with Advanced Dual-Salt Glyme Electrolytes

In addressing the critical challenge of calendar aging in silicon (Si)-based lithium-ion batteries, this study introduces a groundbreaking strategy utilizing glyme-type dual-salt electrolytes (lithium bis(trifluoromethanesulfonyl)imide [LiTFSI] and lithium difluoro(oxalato)borate [LiDFOB]). These electrolytes are demonstrated to significantly mitigate parasitic reactions and capacity loss in Si-NMC (lithium nickel manganese cobalt oxide) full cells, especially when compared with traditional carbonate-based electrolytes. Further, our exhaustive mechanistic analysis reveals that such electrolytes not only preserve the integrity of the Si anode but also improve the cathode/electrolyte interphases (CEI) through the formation of a conformal coating on the high-voltage cathode surface. This dual-salt approach, enhanced by the addition of a phosphate additive, effectively decelerates calendar aging, marking a substantial advance in the quest for durable and reliable Si-based energy storage technologies. The findings underscore the vital role of electrolyte composition in extending the calendar life of Si batteries, offering an alternative avenue toward maximizing the performance and longevity of next-generation Li-Si batteries.

36 MATERIALS SCIENCE↗

A Reduced-Temperature Process for Preparing Atomically Clean Si(100) and SiGe(100) Surfaces with Vapor HF

Silicon processing techniques such as atomic precision advanced manufacturing (APAM) and epitaxial growth require surface preparations that activate oxide desorption (typically >1000 °C) and promote surface reconstruction toward atomically clean, flat, and ordered Si(100)-2 × 1. Here, in this study, we compare the aqueous and vapor phase cleaning of Si and Si/SiGe surfaces to prepare APAM-ready and epitaxy-ready surfaces at lower temperatures. Angle resolved X-ray photoelectron spectroscopy (ARXPS) and Fourier transform infrared (FTIR) spectroscopy indicate that vapor hydrogen fluoride (VHF) cleans dramatically reduce carbon surface contamination and allow the chemically prepared surface to reconstruct at lower temperatures, 600 °C for Si and 580 °C for a Si/Si 0.7 Ge 0.3 heterostructure, into an ordered atomic terrace structure indicated by scanning tunneling microscopy (STM). After thermal treatment and vacuum hydrogen termination, we demonstrate STM hydrogen desorption lithography (HDL) on VHF-treated Si samples, creating reactive zones that enable area-selective chemistry by using a thermal budget similar to CMOS process flows. We anticipate that these results will establish new pathways to integrate APAM with Si foundry processing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Method for producing a hybridization of detector array and integrated circuit for readout

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

Fossum, Eric R.↗

III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations

Integrating wide-bandgap III-V with Si solar cells has been shown to yield higher efficiencies than Si alone: As also presented at this conference, four-terminal efficiencies exceeding 32% have been attained. In this contribution, independent and electrically connected operation of the subcells in such tandem cells is examined. The optics of the tandem cell change significantly if a conducting interconnect, rather than an insulating glass slide, is required between the subcells. These effects are studied, and optically optimized structures for different types of tandem cell operation are presented. It is found that minimizing reflection at the conductive interface between the two cells while maintaining conductivity is the key challenge faced in such devices.

41 EE - Solar Energy Technologies Office (EE-4S)↗

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗

Time-Resolved Hanbury Brown–Twiss Interferometry of On-Chip Biphoton Frequency Combs Using Vernier Phase Modulation

Biphoton frequency combs (BFCs) are promising quantum sources for large-scale and high-dimensional quantum information and networking systems. In this context, the spectral purity of individual frequency bins will be critical for realizing quantum networking protocols like teleportation and entanglement swapping. Measurement of the temporal autocorrelation function of the unheralded signal or idler photons comprising the BFC is a key tool for characterizing their spectral purity and in turn verifying the utility of the biphoton state for networking protocols. Yet the experimentally obtainable precision for measuring BFC correlation functions is often severely limited by detector jitter. The fine temporal features in the correlation function—not only of practical value in quantum information, but also of fundamental interest in the study of quantum optics—are lost as a result. We propose a scheme to circumvent this challenge through electro-optic phase modulation, experimentally demonstrating time-resolved Hanbury Brown–Twiss characterization of BFCs generated from an integrated 40.5-GHz Si 3 N 4 microring, up to a 3×3-dimensional two-qutrit Hilbert space. Through slight detuning of the electro-optic drive frequency from the comb’s free spectral range, our approach leverages Vernier principles to magnify temporal features, which would otherwise be averaged out by detector jitter. We demonstrate our approach under both continuous-wave and pulsed-pumping regimes, finding excellent agreement with theory. In conclusion, our method reveals not only the collective statistics of the contributing frequency bins but also their temporal shapes—features lost in standard fully integrated autocorrelation measurements.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Challenging conventional assumptions in PV: a high-throughput open-air approach to low-cost perovskite module production

Perovskite solar modules (PSMs) offer a promising pathway to low-cost photovoltaics, yet their commercialization is challenged by manufacturing scalability, device uniformity, additive costs, interlayer complexity, and module stability. This study introduces a comprehensive technoeconomic analysis of single junction PSM's and projections for tandem perovskite-Si modules that integrate all materials and manufacturing steps, module performances, projected lifetimes, and manufacturing costs across scales. Here, we highlight an open-air manufacturing approach to fabricate all active layers of serially interconnected PSMs, including electrodes and charge transport layers, enabling high-throughput production without inert or vacuum environments. The analysis reveals two orders of magnitude throughput enhancement and cost reductions of 24% in all-open-air production, escalating to over 60% at 1 GW factory capacity compared to conventional methods. Levelized cost of energy (LCOE) projections for utility-scale installations over 30 years, accounting for module replacement and recycling, demonstrate the potential to achieve the 2030 US target of $0.03 per kWh with realistic 7–11-year PSM lifetimes, outperforming incumbent silicon-based modules. Neither four terminal (4T) nor two terminal (2T) tandem-Si PSMs improve over single junction perovskite or silicon LCOE regardless of higher efficiencies at any modeled lifetime. Addressing PSM technical challenges with a cost-modeling framework guides commercialization efforts and provides a convincing pathway for challenging incumbent Si-based PV.

14 SOLAR ENERGY↗