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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2000

Stellar Calibration of the WIC and SI Imagers and the GEO Photometers on IMAGE/FUV

The FUV instrument on the IMAGE spacecraft comprises three wide-field imagers, the Wide-Band Imaging Camera (WIC) of observing N2 Lyman-Birge-Hopfield (LBH) (140-190 nm) emissions and the Spectrographic Imager (SI), which has a 121.8 nm channel for observing red-shifted HI Lya photons and a 135.6 run channel for observing 01 135.6 nm emissions. In addition, three HI Lya photometers (GEO) are used to monitor the geocorona. The fields of view are 17 degrees x 17 degrees for the WIC imagers, 15 degrees x 15 degrees for the two SI imagers, and 10 diameter for the three GEO photometers. As the IMAGE spacecraft spins every 120 seconds, the GEO photometers sweep out circles on the sky (at 0 degrees and plus or minus 30 degrees with respect to the spacecraft spin plane), and the WIC and SI imagers use the Time Delay Integration (TDI) method to construct images centered on the Earth. Many FUV-bright stars are seen in the WIC, SI and even the GEO data. WE have used archived International Ultraviolet Explorer (IUE) far-ultraviolet flux spectra for 22 of the brightest of these stars to help refine the FUV instrumental sensitivities. The stars chosen range in spectral type form B0V to A11V, with magnitudes ranging from V- 1.3 (a Cru) to V=4.7 (G Cen) (although many more fainter stars are also seen). The initial results of this stellar calibration will be presented and compared with the pre-flight and dayglow modeling results.

Gladstone, R.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗
NASA NTRS1997

Monolithically Integrated SiGe/Si PIN-HBT Front-End Transimpedance Photoreceivers

The demand for monolithically integrated photoreceivers based on Si-based technology keeps increasing as low cost and high reliability products are required for the expanding commercial market. Higher speed and wider operating frequency range are expected when SiGe/Si heterojunction is introduced to the circuit design. In this paper, a monolithic SiGe/Si PIN-HBT front-end transimpedance photoreceiver is demonstrated for the first time. For this purpose, mesa-type SiGe/Si PIN-HBT technology was developed. Fabricated HBTs exhibit f(sub max) of 34 GHz with DC gain of 25. SiGe/Si PIN photodiodes, which share base and collector layers of HBTs, demonstrate responsivity of 0.3 A/W at lambda=850 nm and bandwidth of 450 MHz. Based on these devices, single- and dual-feedback transimpedance amplifiers were fabricated and they exhibited the bandwidth of 3.2 GHz and 3.3 GHz with the transimpedance gain of 45.2 dB(Omega) and 47.4 dB(Omega) respectively. Monolithically integrated single-feedback PIN-HBT photoreceivers were implemented and the bandwidth was measured to be approx. 0.5 GHz, which is limited by the bandwidth of PIN photodiodes.

Rieh, J.-S.↗
NASA NTRS1991

Non-developmental item computer systems and the malicious software threat

The following subject areas are covered: a DOD development system - the Army Secure Operating System; non-development commercial computer systems; security, integrity, and assurance of service (SI and A); post delivery SI and A and malicious software; computer system unique attributes; positive feedback to commercial computer systems vendors; and NDI (Non-Development Item) computers and software safety.

Bown, Rodney L.↗
NASA NTRS1994

Amorphous silicon thin films: The ultimate lightweight space solar cell

Progress is reported with respect to the development of thin film amorphous (alpha-Si) terrestrial solar cells for space applications. Such devices promise to result in very lightweight, low cost, flexible arrays with superior end of life (EOL) performance. Each alpha-Si cell consists of a tandem arrangement of three very thin p-i-n junctions vapor deposited between film electrodes. The thickness of this entire stack is approximately 2.0 microns, resulting in a device of negligible weight, but one that must be mechanically supported for handling and fabrication into arrays. The stack is therefore presently deposited onto a large area (12 by 13 in), rigid, glass superstrate, 40 mil thick, and preliminary space qualification testing of modules so configured is underway. At the same time, a more advanced version is under development in which the thin film stack is transferred from the glass onto a thin (2.0 mil) polymer substrate to create large arrays that are truly flexible and significantly lighter than either the glassed alpha-Si version or present conventional crystalline technologies. In this paper the key processes for such effective transfer are described. In addition, both glassed (rigid) and unglassed (flexible) alpha-Si cells are studied when integrated with various advanced structures to form lightweight systems. EOL predictions are generated for the case of a 1000 W array in a standard, 10 year geosynchronous (GEO) orbit. Specific powers (W/kg), power densities (W/sq m) and total array costs ($/sq ft) are compared.

Vendura, G. J., Jr.↗
NASA NTRS1995

Semiconductor/High-Tc-Superconductor Hybrid ICs

Hybrid integrated circuits (ICs) containing both Si-based semiconducting and YBa(2)Cu(3)O(7-x) superconducting circuit elements on sapphire substrates developed. Help to prevent diffusion of Cu from superconductors into semiconductors. These hybrid ICs combine superconducting and semiconducting features unavailable in superconducting or semiconducting circuitry alone. For example, complementary metal oxide/semiconductor (CMOS) readout and memory devices integrated with fast-switching Josephson-junction super-conducting logic devices and zero-resistance interconnections.

Burns, Michael J.↗
NASA NTRS2001

Coupling Between Microstrip Lines with Finite Width Ground Plane Embedded in Polyimide Layers for 3D-MMICs on Si

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/millimeter-wave integrated circuits on complementary metal oxide semiconductor (CMOS) (low resistivity) Si wafers. Thin film microstrip lines (TFMS) with finite width ground planes embedded in the polyimide are often used. However, the closely spaced TFMS lines are susceptible to high levels of coupling, which degrades circuit performance. In this paper, Finite Difference Time Domain (FDTD) analysis and experimental measurements are used to show that the ground planes must be connected by via holes to reduce coupling in both the forward and backward directions.

Ponchak, George E.↗
NASA NTRS1985

Positive ion composition and derived particle heating in the lower auroral ionosphere

Two E11a rocket flights in salvo B (launched on November 16, 1980) and A2 (launched on November 30, 1980), which provide positive ion composition, total and partial ion density, and electron density in the altitude range 60-170 km above Kiruna under conditions of moderate and strong magnetic disturbance, are examined. It is shown that the ionization sources are predominantly precipitating electrons in salvo B and precipitating protons in salvo A2. Under winter-time auroral conditions the characteristics of the positive ion composition are large NO(+)/O2(+) density ratios, with maximum values of 20 at 118 km in salvo B and 100 at 100 km in salvo A2, respectively. The transition from NO(+) to proton hydrates is found at an altitude of 79 km in salvo B and 76 km in salvo A2. The calculated O(+) and N(+) densities are in good agreement with model calculations and from these calculations it is concluded that 28(+) is mainly N2(+) above 110 km in salvo B and above 105 km in salvo A2, and Si(+) below these altitudes. By altitude integration of the ion-electron pair production, the energy flux of precipitating particles is found to have values of 0.85 mW/sq m and 1.0 mW/sq m in salvoes B and A2, respectively.

Kopp, E.↗
NASA NTRS1996

Magnetospheric Atmospheric X-ray Imaging Experiment (MAXIE)

This report summarizes the activities sponsored by the Office of Naval Research for the Magnetospheric Atmospheric X-ray Imaging Experiment (MAXIE). The MAXIE instrument was developed as a joint activity of Lockheed, The Aerospace Corporation, and the University of Bergen, Norway. Lockheed was responsible for the overall management of the program, interfacing with the appropriate government agencies, the overall electrical and mechanical design, flight software, environmental testing, spacecraft integration activities, on orbit checkout, and data processing activities. The Magnetospheric Atmospheric X-ray Imaging Experiment (MAXIE), the ONR 401 experiment, is the first in a new class of satellite-borne remote sensing instruments. The primary innovation is the ability to obtain rapid, sequential, images with high sensitivity of the earth's X ray aurora from a low altitude polar orbiting satellite. These images can be used to identify dynamic temporal variations in the three-dimensional (energy and position) distribution of electron precipitation into the atmosphere. MAXIE was launched on the TIROS NOAA-13 satellite on 9 August 1993. The experiment performed well during its turn-on sequence; however, the spacecraft bus failed on 21 August 1993. New spacebased technologies successfully used in MAXIE were mixed-mode ASIC microcircuits, a zero torque scanning system with associated viscoelastic damping, a paraffin stow release mechanism, a parallel integrating PHA processor, a low noise Si(Li) sensor telescope, and an advanced thermal cooling system. MAXIE's on orbit operation, control of penetrating particle backgrounds, and scientific data indicated good overall performance.

Imhof, W. L.↗
NASA NTRS2001

Carbonate Globules from Spitsbergen, Norway: Terrestrial Analogs of the Carbonates in Martian Meteorite ALH84001?

Pleistocene volcanic centers in NW Spitsbergen, Norway host one of the world's richest occurrences of mantle xenoliths. The xenoliths comprise varieties of spinel lherzolites and pyroxenites. Some of these xenoliths (and their host basalts) contain 10-100 micrometer globules of ankedtic-magnesitic carbonates (AMC). In composition, mineralogy and petrology the AMC globules from Spitsbergen are strikingly similar to the carbonate globules in ALH84001. The AMC globules occur within interstitial quenched glass and as fracture fillings, although we have not seen replacement fabrics analogous to carbonate rosettes replacing glass in ALH84001. Siderite/ankerite forms the core of these concentrically zoned globules while rims are predominantly magnesite. Clay minerals can occasionally be found within and around the globules. Aside from the clay minerals, the principal mineralogical difference between the AMCs and the ALH84001 carbonate rosettes is the presence of concentrated zones of nanophase magnetite in the rosettes, notably absent in the AMCs. However, carbonate globules containing nanophase magnetite have been produced inorganically by hydrothermal precipitation of carbonates and subsequent heating. We heated Spitsbergen AMC at 585 C in a reducing atmosphere to determine whether magnetite could be produced. Optical micrographs of the heated Spitsbergen AMC show dark concentric zones within the AMC. High resolution SEM images of those areas reveal 150-200 nm euhedral crystals that exhibit various morphologies including octahedra and elongated prisms. EDS analyses of areas where the crystals occur contain Fe, O, and minor Si, and P. However, the probe integrates over volumes of material, which also include the surrounding matrix. We have begun TEM observations of both the heated and unheated Spitsbergen AMC to characterize the microstructures of the carbonates, establish the presence/absence of magnetite and determine the relationship of the clay minerals to the carbonates and host rock.

De, Subarnarek↗
NASA NTRS2002

Coupling Between Microstrip Lines and Finite Ground Coplanar Lines Embedded in Polyimide Layers for 3D-MMICs on Silicon

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on CMOS (low resistivity) Si wafers. It is expected that these circuits will replace the ones fabricated on GaAs and reduce the overall system cost. However, the closely spaced transmission lines that are required for a high-density circuit environment are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling and ways to reduce it are presented for two types of transmission lines: a) the microstrip line and b) the Finite Ground Coplanar (FGC) line. For microstrip lines it is shown that a fence of metalized via-holes can significantly reduce coupling, especially in the case when both lines are on the same polyimide layer or when the shielding structure extends through several polyimide layers. For closely spaced microstrip lines, coupling is lower for a metal filled trench shield than a via-hole fence. Coupling amongst microstrip lines is dependent on the ratio of line separation to polyimide thickness and is primarily due to magnetic fields. For FGC lines it is shown that they have in general low coupling that can be reduced significantly when there is even a small gap between the ground planes of each line. FGC lines have approximately 8 dB lower coupling than coupled coplanar waveguides (CPW). In addition, forward and backward characteristics of the FGC lines do not resemble those of other transmission lines such as microstrip. Therefore, the coupling mechanism of the FGC lines is different compared to thin film microstrip lines.

Ponchak, G. E.↗
NASA NTRS1991

Integral bypass diodes in an amorphous silicon alloy photovoltaic module

Thin-film, tandem-junction, amorphous silicon (a-Si) photovoltaic modules were constructed in which a part of the a-Si alloy cell material is used to form bypass protection diodes. This integral design circumvents the need for incorporating external, conventional diodes, thus simplifying the manufacturing process and reducing module weight.

Hanak, J. J.↗
NASA NTRS2012

Mu-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

We describe the Mu-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the microstrip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

Hsieh, Wen-Ting↗
NASA NTRS2012

Micro-Spec: A High Performance Compact Spectrometer for Submillimeter Astronomy

We describe the micro-Spec, an extremely compact high performance spectrometer for the submillimeter and millimeter spectral ranges. We have designed a fully integrated submillimeter spectrometer based on superconducting microstrip technology and fabricated its critical elements. Using low loss transmission lines, we can produce a fully integrated high resolution submillimeter spectrometer on a single four inch Si wafer. A resolution of 500 can readily be achieved with standard fabrication tolerance, higher with phase trimming. All functions of the spectrometer are integrated - light is coupled to the micro strip circuit with a planar antenna, the spectra discrimination is achieved using a synthetic grating, orders are separated using a built-in planar filter, and the light is detected using photon counting Microwave Kinetic Inductance Detectors (MKID). We will discus the design principle of the instrument, describe its technical advantages, and report the progress on the development of the instrument.

Hsieh, Wen-Ting↗
NASA NTRS1993

Growth of Si spherical crystals and the surface oxidation (M-9)

Nearly 90 percent of semiconductor devices are produced with Si single crystals as the starting materials. For instance, the integrated circuits (IC), which are used in almost all electronic equipments such as TV, tape recorders, audio amplifiers, etc., are made after various processings of Si single crystal wafers. In these wafers, the same controlled amounts of impurities are added and the uniformities in their distributions are extremely important. Growth under microgravity makes it possible to eliminate the buoyancy-driven convection in the melt, which is one of the main origins of convections which results in non-uniformity of the impurity. Another source of convection is known as Marangoni convection which is driven on the free surface when a temperature gradient occurs. One of the merits of microgravity experimentation is that the detailed study of this convection becomes possible. Another important advantage of microgravity is that growth of crystals without a crucible is possible. This makes it possible to study melt growth without the strain which is usually introduced on the ground. Nevertheless, we should repeat and analyze many growth experiments in space to get reliable results. However, since in the FMPT, the time for the experiment is limited, we plan to carry out two kinds of very simple and basic experiments as the first step for the semiconductor growth experiment. In the first experiment, we use single crystal Si sphere as the starting material and as shown, this sphere is heated in the furnace at a slightly higher temperature than the melting point. After the melting front moves nearly half way to its center, the temperature is decreased to stop the melting and to start the growth from the seed for which we use the unmelted solid party of the sphere. The sphere is centered by quartz protuberances inside of the quartz crucible. There exists the possibility of temperature fluctuations being introduced when the molten sphere occasionally touches the protuberances. The total time needed for the melting and the growth processes is estimated to be 30 minutes. Infrared emission from the sphere is monitored in order to prevent the accidental loss of the central solid core. The schematical illustration of the second experient is shown. A single crystal, Si rod is used as the starting material. In the first stage, the rod is melted from one end to obtain a liquid sphere. In the second stage, the single crystal is grown by decreasing the temperature from the unmelted part of the rod which is used as the seed. The second experient somewhat resembles the Czochralski method used on the ground; however, in the space experiment, no crucible is employed and the temperature uniformity is much superior. In both experiments, phosphorous is doped to allow observation of the change in the shape of the liquid solid interface during crystal growth and the impurity striations, if any.

Nishinaga, Tatau↗
NASA NTRS1994

Clean assembly and integration techniques for the Hubble Space Telescope High Fidelity Mechanical Simulator

A mechanical simulator of the Hubble Space Telescope (HST) Aft Shroud was built to perform verification testing of the Servicing Mission Scientific Instruments (SI's) and to provide a facility for astronaut training. All assembly, integration, and test activities occurred under the guidance of a contamination control plan, and all work was reviewed by a contamination engineer prior to implementation. An integrated approach was followed in which materials selection, manufacturing, assembly, subsystem integration, and end product use were considered and controlled to ensure that the use of the High Fidelity Mechanical Simulator (HFMS) as a verification tool would not contaminate mission critical hardware. Surfaces were cleaned throughout manufacturing, assembly, and integration, and reverification was performed following major activities. Direct surface sampling was the preferred method of verification, but access and material constraints led to the use of indirect methods as well. Although surface geometries and coatings often made contamination verification difficult, final contamination sampling and monitoring demonstrated the ability to maintain a class M5.5 environment with surface levels less than 400B inside the HFMS.

Hughes, David W.↗