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High Performance SiC Power Module Based on Repackaging of Discrete SiC Devices
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Characterization of Heterogeneity and Mechanical Properties of SiC-SiC Composites.
Abstract not provided.
Enhanced Lifetime of SiC-SiC Joints
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Reinforced Radiation Resistant SiC-SiC Composites for Nuclear Reactors and Fuel Cladding
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Tribological behavior of spark plasma sintered Ti 3 SiC 2 MAX phase composites
Ti₃SiC₂ MAX phases are considered promising candidates for tribological applications; but, their low hardness (5-6 GPa) can lead to increased abrasive wear and higher wear rates. This study investigates the effect of incorporating hard SiC particles on microstructure, mechanical, and tribological behavior of Ti₃SiC₂-SiC-based MAX phase composites prepared using spark plasma sintering at 1400 °C, 40 MPa, 15-minute holding time. Phase and microstructural characterization of composites confirmed the formation of Ti₃SiC₂ MAX phase (90%) along with TiC as a minor phase (10%). For Ti₃SiC₂-SiC, homogeneous distribution of SiC grains within Ti₃SiC₂ matrix resulted in increased hardness from ~11.6 GPa to ~14.8 GPa; however, the flexural strength decreased from ~615 MPa to ~597 MPa due to coefficient of thermal expansion mismatch. Tribological behavior of Ti₃SiC₂-SiC MAX phase composites was assessed using unidirectional sliding ball-on-flat tests with a 52100 steel ball at different loads and a constant speed of 0.05 m/s. SiC reinforced composites exhibited a decreased friction coefficient from 0.39 to 0.29 and wear rates comparable to Ti₃SiC₂ (7-10×10⁻³ mm³/N·m). SEM and EDS analysis of the worn surfaces indicated material transfer from the steel ball counter body and its oxidation due to frictional heating, at lower loads (2N and 5N), whereas at higher load (10N), fracture of the transfer layer dominated, with the presence of microcracks, delamination, grain pull-outs, and wear debris. Improved mechanical properties and good adhesion of SiC with Ti₃SiC₂ matrix resulted in reduced microcracks and grain pull-outs, making Ti₃SiC₂-SiC/Steel tribo-pair more suitable for tribological applications.
Exceptional radiation resistance of hardened amorphous SiC under high-temperature hydrogen ion implantation
This study provides a compelling comparison of the structural and mechanical responses of single-crystal silicon carbide (sc-SiC), nanocrystalline silicon carbide (nc-SiC), and amorphous silicon carbide (am-SiC) to hydrogen ion implantation at 650 °C across three distinct fluences: low, medium, and high (LF, MF, HF). While both sc-SiC and nc-SiC exhibit blistering, microcracking, and exfoliation, am-SiC remains free of blisters, demonstrating superior resilience. Notably, nc-SiC, with its high density of stacking faults (SFs), requires a higher fluence to initiate blistering compared to sc-SiC. At high fluences, hydrogen accumulation at grain boundaries (GBs) in nc-SiC elevates internal gas pressure, intensifying exfoliation. In sc-SiC, blistering leads to increased hardness, whereas in nc-SiC, the degradation of the SF structure results in a reduction in hardness. In contrast, am-SiC undergoes structural relaxation during irradiation, resulting in a significant increase in hardness while maintaining its structural integrity, with only the formation of nano-sized spherical bubbles observed. Furthermore, these findings highlight the exceptional suitability of am-SiC for nuclear applications, where resistance to radiation-induced microcracking is critical.
Oxidation of 3D-printed SiC in air and steam environments
Here, the high-temperature oxidation of additively manufactured and chemically vapor infiltrated (3D-printed SiC) has been compared to chemical vapor deposited (CVD) SiC. 100-h isothermal exposures were conducted at 1425° and 1300°C at 1 atm under both dry air and steam environments. A SiC reaction tube was utilized to reduce silica volatility. After steam oxidation at 1425° and 1300°C, on the 3D-printed SiC surface, which was intrinsically rougher than the CVD surface, scales were 70%–90% thicker at the convex regions compared to concave/flat regions. In the convex regions, large cracks perpendicular to the oxidizing interface were observed. After dry air oxidation, scale thicknesses were comparable between 3D-printed SiC and CVD SiC, regardless of geometry. Finite element modeling, conducted to elucidate the relationship between SiC geometry and ß- to α-cristobalite transformation stress, determined cristobalite transformation tensile stresses to be on the order of 103 MPa during cool down, assuming a 6 vol% reduction. Compared to flat SiC substrates, tensile transformation stresses were elevated at concave regions and relaxed at convex regions. Combined with specimen mass gain (accounting for the rougher surface) of 3D-printed SiC being 15%–32% higher for 3D-printed SiC after 1300°C and 1425°C steam oxidation, the work presented concludes that the increased oxidation of 3D-printed SiC is primarily caused by tensile hoop stresses driven by oxidation volume expansion. Lastly, the efficacy of the 3D-printing method is demonstrated through the production of tristructural isotropic imbedded 3D-printed SiC fuel forms.
Effect of microstructure and neutron irradiation defects on deuterium retention in SiC
Retention of hydrogen isotopes is a critical concern for operating fusion reactors as retained tritium both activates components and removes scarce fuel from the fuel cycle. Radiation-induced displacement damage in SiC influences the retention of hydrogen isotopes compared to pristine SiC. Deuterium retention in neutron irradiated high purity SiC has been compared to different microstructures of non-irradiated high purity SiC using thermal desorption spectroscopy after gas charging and low energy ion implantation. Experimental results show lower deuterium retention in single crystal SiC than in polycrystal SiC indicating that grain boundaries are key trapping features in unirradiated SiC. Deuterium is released at lower temperatures in neutron irradiated polycrystal SiC compared to pristine polycrystal SiC, suggesting weaker trapping by radiation-induced defects compared to grain boundary trapping sites in the pristine materials. Low energy ion implantation caused a high deuterium release temperature, highlighting the sensitivity of deuterium release behaviour to radiation defect characteristics. First principles calculations have been conducted to identify energetically favourable trapping sites in SiC at the H ABc V Si and H TSi V C complexes, and migration barriers between interstitial sites. This helps interpret experimental results and derive effective diffusivity of hydrogen isotopes in SiC in the presence of vacancies.
Mechanical and Thermophysical Properties of 3D-Printed SiC before and after Neutron Irradiation – FY21
This report presents the mechanical and thermophysical properties of 3D-printed SiC before and after neutron irradiation that have been evaluated to assess the fuel matrix material for the Transformational Challenge Reactor (TCR). The TCR fuel form consists of an additively-manufactured silicon carbide (SiC) matrix and uranium nitride tristructural isotropic (UN TRISO) fuel particles, which is manufactured through a newly developed processing route combining binderjet 3D printing, TRISO fuel particle loading, and chemical vapor infiltration (CVI). Because the fuel matrix is a primary component of the TCR core and its response to mechanical and thermal loads during operation is one of the most influential factors on the integrity of TCR core, testing and evaluation have focused on producing mechanical and thermophysical properties data for the binderjet/CVI SiC. Baseline mechanical and thermophysical properties were measured from the disk specimens printed for different and sizes orientations, which included equibiaxial flexural failure strength, elastic constants, thermal diffusivity and conductivity, density, and the coefficient of thermal expansion. Flexural failure strength datasets showed similar Weibull distributions regardless of sample variants including different orientations. The mean failure strengths of the 3D-printed SiC variants were in the range of 280–310 MPa, which are slightly lower than that of the chemical vapor deposition (CVD) SiC. Thermophysical test results showed that specific heat and thermal expansion are not sensitive to the build direction of SiC samples, while thermal conductivity is highly dependent on the build direction and can be correlated to the anisotropic character of the 3D-printed SiC. Neutron irradiation tests were carried out on the 3D-printed 6-mm diameter SiC disk specimens. Irradiation was carried to 2.3 dpa over a temperature range of 360–880°C. No significant degradation in strength was observed in SiC after irradiations in various conditions and with different orientations. Anisotropy that had been observed in the thermal conductivity of 3D-printed SiC prior to irradiation vanished after irradiation as the irradiation defect thermal resistivity accumulated in the material. Electron microscopy of the microstructure after neutron irradiation showed distinct defect morphologies in the heterogenous material, but no evidence for irradiation-induced cracking or degradation in the microstructure was observed.
Development of Ti 3 SiC 2 MAX phase tubular structures for solar receiver applications
Solar receiver tubes are key components of concentrating solar-thermal power (CSP) systems that harvest solar energy. For better efficiency, the Gen3 CSP receivers, which collect heat into a heat transfer fluid, require a temperature exceeding 700 °C during operation and need to perform under extreme conditions of high temperature and high thermal stress. Operators are seeking CSP designs using new high-temperature structural materials with high thermal conductivity and high creep resistance to achieve a design life of 30 years and thus help recover the plant capital cost sooner. MAX phase materials, which consist of an early transition metal element, an A-group element, and carbon or nitrogen, are expected to exhibit high creep resistance as well as high fracture toughness. Here, in this paper, we describe fabricating both (1) dense Ti 3 SiC 2 MAX phase disks and (2) short-length tubes using field-assisted sintering technology (FAST). First, the disk samples that we fabricated are fully dense and contain ≈90 % Ti 3 SiC 2 MAX phase materials and ≈10 % TiC phase materials. We determined a flexure strength of 519 ± 32 MPa by conducting a four-point bending test at room temperature with rectangular bar samples of ≈100 % density. The thermal conductivity of the Ti 3 SiC 2 MAX phase samples, measured by light flashing analysis, decreases linearly from a value of 41 W . m -1 . K -1 at room temperature to a value of 36 W . m -1 . K -1 at 650 °C. A solar reflectance measurement of the Ti 3 SiC 2 MAX phase revealed that, temperature increases from 400 to 1400 °C, thermal emittance increases from 0.39 to 0.49, while selectivity decreases from 1.8 to 1.4, respectively. Whereas the surface oxidized MAX phase samples after 100 h exposure to air at 1000 °C exhibit that of SiC. Next, we discuss fabrication of the crack-free Ti 3 SiC 2 MAX phase tubular structures accomplished by using FAST processing in graphite bedding. A Ti 3 SiC 2 MAX phase content of > 95 % with traceable ≈3% remaining TiC phase and ≈15 % porosity were demonstrated after high-temperature annealing. An average fracture strength of ≈250 MPa was determined with Ti 3 SiC 2 MAX phase tubes of ≈85 % density by diametral compression testing at room temperature. Our work demonstrated that using FAST processing to produce Ti 3 SiC 2 MAX phase tubular structures for CSP receiver applications is a viable approach.
Electric Drive Technologies Consortium (EDTC)/ Cost competitive, high-Performance, highly Reliable (CPR) Power Devices on 4H-SiC (Final Report)
4H-Silicon carbide (4H-SiC) is a wide bandgap semiconductor that offers superior material properties over silicon, including higher critical electric field, thermal conductivity, and electron saturation velocity. These advantages make 4H-SiC highly attractive for high-voltage, high-efficiency power electronics. However, realizing the full potential of SiC requires device technologies that are not only high-performing but also manufacturable and reliable under real-world operating conditions. This report summarizes the outcomes of a five-year R&D effort funded by the U.S. Department of Energy (DOE) under the Electric Drive Technologies Consortium (EDTC), focused on developing cost-competitive, high-performance, and highly reliable (CPR) power devices on 4H-SiC substrates. The program targeted scalable and manufacturable 1.2 kV-class SiC MOSFETs optimized for next-generation electric vehicles, renewable energy systems, and industrial power conversion. The project delivered transformative advancements in SiC power device performance and ruggedness. Particularly, Specific on-resistance (R on,sp ) was reduced by up to 37%, from ~4.0 m$\Omega \cdot$cm 2 in earlier designs to an industry-leading 2.40 m$\Omega \cdot$cm 2 , driven by optimized doping, refined JFET widths, and layout engineering. Breakdown voltages (BV) exceeded 1600 V, marking improvement over legacy baselines, and demonstrating the robustness of newly implemented junction profiles and edge terminations. Short-circuit withstand time (SCWT) saw a remarkable 4$\times$ increase, from ~2 $\mu$s to over 8 $\mu$s, achieved through the successful deployment of deep P-well structures (~1.8–2.0 $\mu$m) via channeling implantation. This innovative process breakthrough enabled precise junction formation without MeV-class implantation tools, reduced leakage under high field stress, and allowed even the shortest-channel devices (down to 0.3 $\mu$m) to achieve both high BV and excellent ruggedness—breaking the traditional trade-off between conduction efficiency and blocking capability. Several novel architectures pushed the performance envelope further. JBSFETs—featuring embedded Schottky portions—eliminated bipolar degradation and drastically reduced third-quadrant leakage, while Ladder MOSFETs introduced a clever orthogonal conduction path that achieved a 15.4% reduction in R on,sp over standard linear designs. Switching performance reached new benchmarks: short-channel devices showed a 31% reduction in total switching energy compared to 0.5 $\mu$m counterparts, while maintaining manageable gate drive requirements. Layout-optimized structures not only improved transconductance but also accelerated switching transitions, pointing to real-world benefits in converter-level efficiency. The devices also passed rigorous reliability validation. Stress-tested across TDDB, HTGB, HTRB, HVP, and burn-in, the devices screened under 30 V/10 hr and 43 V/1 s protocols consistently exhibited tighter lifetime distributions and long-term oxide robustness. These screening techniques proved effective in identifying latent defects and ensuring deployment-grade reliability. Meanwhile, advanced 3D TCAD simulations revealed and resolved electric field hotspots—particularly in HEXFET corners—where fields exceeding 4.8 MV/cm were mitigated through geometry-aware layout corrections. Overall, the results of this project demonstrate a manufacturable and scalable SiC power device platform that addresses key DOE performance targets for efficient, robust, and reliable 1.2kV 4H-SiC Power Devices. The developed technologies represent a meaningful step forward in the commercial readiness of high-voltage SiC solutions and provide a strong foundation for continued advancement in wide bandgap power electronics.
Influence of SiC microstructure on its corrosion behavior in molten FLiNaK salt
The influence of the microstructure on the corrosion rate of three monolithic SiC samples in FLiNaK salt at 900 °C for 250 h was studied. The SiC samples, labeled as SiC-1, SiC-2, and SiC-3, had corrosion rates of 0.137, 0.020, and 0.043 mg/cm 2 h, respectively. Compared with grain size and the presence of special grain boundaries (i.e., Σ3), the content of high-angle grain boundaries (HAGBs) appeared to have the strongest influence on the corrosion rate of SiC in FLiNaK salt, since the corrosion rate increased six times as the concentration of high-angle grain boundaries increased from 19 to 32% for SiC-2 and SiC-1, respectively. The results here stress the importance of controlling the content of HAGBs during the production process of SiC.
Sensitivity analysis applied to SiC failure probability in TRISO modeled with BISON
Here, a sensitivity analysis on the failure probability of the Silicon Carbide (SiC) layer in tristructural isotropic (TRISO) nuclear fuel during transient conditions predicted by the BISON fuel performance code is performed. The principal goal of the analysis is to understand the most important parameters dictating SiC failure behavior in BISON during Reactivity Initiated Accidents (RIAs). SiC brittle fracture probability is modeled using Weibull statistics. A total of seven inputs related to SiC failure has been selected for the analysis, including the Weibull statistics parameters, elastic moduli for SiC and Pyrolitic Carbon (PyC) and SiC stress-free temperature. A 1D TRISO BISON model has been established for various reactivity insertions performed at the Nuclear Safety Research Reactor (NSRR). The principal advantage associated with the 1D TRISO model developed in this work is its computational efficiency. The Sobol variance decomposition method is used, and the sensitivity indices are presented for eight different values of the energy deposition. The results show that the two most important parameters impacting the predicted SiC failure probability are the Weibull modulus and the characteristic stress, and a co-variance amongst these parameters is obtained for low reactivity insertions. An additional new finding of this work is that the relative importance of Weibull parameters depends on the energy deposition, and thus reactivity, regime. For low energy depositions, two parameters are of influence on SiC failure probability, while for high energy depositions only one parameter impacts failure probability results. Moreover, optimization of the Weibull modulus and characteristic stress is performed by minimizing the RMSE between BISON failure probability predictions and experimental failure fractions for each energy deposition. This work also demonstrates the validity of the NSRR tests BISON simulations and of the respective sensitivity analysis results as conservative, yet indicative for slower transients characterized by lower deposited energies. Such verification is achieved through the partial extension of the analysis to a group Control Rod Withdrawal reproduced from a previous study. Another novel result of this analysis is that no single set of Weibull parameters can reproduce all reactivity insertion experimental failure results, which is related to the intrinsic nature of SiC failure properties, and a new range for the parameters is proposed to produce a failure probability envelope that encompasses the experimental fractions. Additionaly, this work proposes a new approach for future failure analysis with BISON, consisting in the use of Weibull parameters ranges, rather than fixed sets, along with failure envelopes generation.
Oxidation and microstructure of SiC f /SiC composites in moist air up to 1600°C by X‐ray tomographic characterization
Abstract SiC f /SiC composites that possess PyC or BN interface layers were fabricated and then oxidized in moist air at 1000, 1200, 1400, and 1600°C. High‐resolution CT was used for capturing 3D images and quantifying the SiC phase, mesophase, and voids. The oxidation behavior and microstructural evolution of SiC f /SiC with PyC or BN interface are discussed in this study. The microstructure of the SiC f /SiC with a PyC layer was seriously damaged in moist air at high temperature, whereas the BN interface layer enhanced the oxidation resistance of the SiC f /SiC. These results are also confirmed by using XRD, oxidation mass gain, tensile testing, and SEM measurements. The results of the oxidation behavior and microstructural evolution for SiC f /SiC oxidized in dry air are also compared with the results of this study. Comparing the SiC f /SiC with a PyC interface layer, the composite with a BN interface layer oxidized in moist air exhibits a high void growth rate and a low SiO 2 grain growth rate from 1000 to 1600°C. This work will provide guidance for predicting the service life of SiC f /SiC for multiscale damage rate models of materials at a local scale and will also provide guidance on the life service design of SiC f /SiC materials.
Phase separation during the direct powder bed fusion of SiC
Powder bed fusion (PBF) is an attractive additive manufacturing option for fabrication of SiC object with complex geometries. However, the density and microstructure controls remain a challenge. This study is aimed at understanding laser–SiC interactions, with emphasis on microstructure-processing relationships, to identify potential solutions for the process improvement. SiC tubes were fabricated by PBF of pure SiC powders without sintering additives. Further, comprehensive analysis by X-ray diffraction, Raman spectroscopy, and electron microscopy indicated that binding of SiC particles was achieved by incongruent melting of SiC to a Si/C mixture containing SiC micro- and nanocrystallites. The phase evolution under laser irradiation of SiC was explained by phase diagrams. This study uncovered the PBF SiC microstructure at different length scales and the relationship between the microstructure and the processing parameters.
SiC cladding R&D execution plan
To advance the development of accident-tolerant fuel cladding for light-water reactors, the Advanced Fuels Campaign actively addresses the R&D gap between the specialized technological progress in SiC-based composite materials, led by industrial partners, and the fundamental scientific understanding of material behavior under reactor operating conditions. The laboratory activities are systematically organized based on the Development Strategy document, which outlines critical barriers to the use of SiC composites in nuclear energy applications for the coming decade and beyond. To complement the strategy, this execution plan specifies a detailed year-by-year work package and establishes key milestones for assessing progress in technological advancement. This plan has been formulated in collaboration with principal investigators at national laboratories, stakeholders, and industry partners with the goal of closing technology gaps and readying SiC-based cladding technologies for full-scale commercial testing. The research conducted at the national laboratories is categorized into three primary subjects: (1) addressing challenges associated with the performance of SiC cladding under normal operating environments, (2) identifying the failure limits of SiC cladding under accident conditions, and (3) modeling fuel performance for SiC cladding systems. Comprehensive laboratory activities integrate the development of advanced modeling tools for SiC-based cladding systems with experimental validation via integrated testing of multiphysics phenomena. This document lays out the laboratory plan to support the development of SiC-based technologies, which have the potential for significant operational and safety benefits for the U.S. nuclear industry. This plan aligns with industry developer needs, relevant Nuclear Energy University Programs, and Nuclear Energy Advanced Modeling and Simulation Programs to ensure SiC cladding technologies are matured as efficiently as possible and will be maintained and updated to accommodate the dynamically evolving progress of development, capability needs, and resource availability.