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DOE OSTI2022

Low temperature process for diode termination of fully depleted high resistivity silicon radiation detectors that can be used for shallow entrance windows and thinned sensors

Fabrication of vertical diodes for radiation sensing using a low temperature microwave anneal is provided. This kind of anneal allows the back side processing to be performed after the front side processing is done without damaging the front side structures. This enables a simplified fabrication of thinned detectors compared to a conventional silicon on insulator process. Another feature that this technology enables is a thin entrance window for a detector that also serves as the doped diode termination. Such thin entrance windows are especially suitable for detection of low energy radiation.

Kenney, Christopher J.↗

DOE OSTI2023

Conceptual study of a two-layer silicon pixel detector to tag the passage of muons from cosmic sources through quantum processors

Abstract Recent studies in quantum computing have shown that quantum error correction with large numbers of physical qubits are limited by ionizing radiation from high-energy particles. Depending on the physical setup of the quantum processor, the contribution of muons from cosmic sources can constitute a significant fraction of these interactions. As most of these muons are difficult to stop, we perform a conceptual study of a two-layer silicon pixel detector to tag their hits on a solid-state quantum processor instead. With a typical dilution refrigerator geometry model, we find that efficiencies greater than 50% are most likely to be achieved if at least one of the layers is operated at the deep-cryogenic (<1 K) flanges of the refrigerator. Following this finding, we further propose a novel research program that could allow the development of silicon pixel detectors that are fast enough to provide input to quantum error correction algorithms, can operate at deep-cryogenic temperatures, and have very low power consumption.

Instruments & Instrumentation↗

DOE OSTI2021

EIC Physics from An All-Silicon Tracking Detector

The proposed electron-ion collider has a rich physics program to study the internal structure of protons and heavy nuclei. This program will impose strict requirements on detector design. This paper explores how these requirements can be satisfied using an all-silicon tracking detector, by consideration of three representative probes: heavy flavor hadrons, jets, and exclusive vector mesons.

Arrington, John↗

DOE OSTI2024

Why would you put a flashlight in a dark matter detector?

Silicon photomultipliers (SiPMs) are solid-state, single-photon sensitive, pixelated sensors whose usage for scintillation detection has rapidly increased over the past decade. It is known that the avalanche process within the device, which renders a single photon detectable, can also generate secondary photons which may be detected by a separate device. This effect, known as external crosstalk, could potentially degrade the science goals of future xenon dark matter experiments. In this article, we measure the effect of external crosstalk in a dual-phase, liquid xenon time projection chamber fully instrumented with SiPMs. We then consider the implications for a future xenon dark matter experiment utilizing SiPMs and discuss possible solutions.

47 OTHER INSTRUMENTATION↗

DOE OSTI2022

Preliminary benchmarks and analysis of boundary conditions in a trenched microstructured silicon radiation detector

Microstructured neutron detectors have the benefit of enhanced neutron detection efficiency as compared to planar devices, achieved by etching 6 LiF-filled trenches on the top surface of a silicon PIN diode. This sensor geometry results in a complex electric field distribution and depletion characteristics within the diode under reverse bias. For the first time on record, the effects of a fixed oxide charge on the microstructured device depletion characteristics and mobile carrier transport is investigated. Prototype detectors were fabricated with non-conformal surface doping. Capacitance voltage and current voltage measurements were performed for these prototypes and compared with COMSOL Multiphysics simulations. A spectral response from an 241Am alpha particle source was acquired and analyzed. It was found that monoenergetic alpha particles produce three prominent peaks in the pulse height spectrum output by the device. The peaks were confirmed by simulations to correlate with dead layers and incident trajectories into the microstructure. It was also found that significant differences in pulse rise time result, corresponding with events arriving in a low-field region in the fins and a high-field region in the bulk. Geant4 was utilized for radiation transport, interaction modeling, and benchmarking the spectral data. The results of this simulation work provide confidence in the ability to attain and benchmark electrical characteristics and spectral data for semiconductor radiation detectors employing complex microstructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2026

EMPHATIC Silicon Strip Detector Efficiencies

EMPHATIC is an experiment at Fermilab which aims to reduce current neutrino flux uncertainties. This report discusses the limitations current neutrino flux uncertainties places on large scale neutrino experiments, provides background on the EMPHATIC experiment, and details the project of determining the efficiency of the Silicon Strip Detectors (SSDs) used in EMPHATIC. As part of the data analysis process and in order to increase the accuracy of EMPHATIC’s simulations a representation of efficiency of each SSD is required. To achieve this a data-driven analysis was performed on EMPHATIC's collected data using the Root and Art frameworks. Visual and numerical representations of efficiency were determined. The average efficiency over all SSDs is 98.58\%, however this number deflated as it includes known bad channels.

Olson, Virginia [Illinois U., Urbana (main)]↗

DOE OSTI2026

Determining the Efficiency of EMPHATICs Silicon Strip Detectors (SSDs)

Olson, V. [Illinois U., Urbana (main)]↗

DOE OSTI2025

Quality concerns caused by quality control — deformation of silicon strip detector modules in thermal cycling tests

The ATLAS experiment at the Large Hadron Collider (LHC) is currently preparing to replace its present Inner Detector (ID) with the upgraded, all-silicon Inner Tracker (ITk) for its High-Luminosity upgrade (HL-LHC). The ITk will consist of a central pixel tracker and the outer strip tracker, consisting of about 19,000 strip detector modules. Each strip module is assembled from up to two sensors, and up to five flexes (depending on its geometry) in a series of gluing, wirebonding and quality control steps. During detector operation, modules will be cooled down to temperatures of about -35 °C (corresponding to the temperature of the support structures on which they will be mounted) after being initially assembled and stored at room temperature. In order to ensure compatibility with the detector's operating temperature range, modules are subjected to thermal cycling as part of their quality control process. Ten cycles between -35 °C and +40 °C are performed for each module, with full electrical characterisation tests at each high and low temperature point. As part of an investigation into the stress experienced by modules during cooling, it was observed that modules generally showed a change in module shape before and after thermal cycling. This paper presents a summary of the discovery and understanding of the observed changes, connecting them with excess module stress, as well as the resulting modifications to the module thermal cycling procedure.

47 OTHER INSTRUMENTATION↗

DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front- end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high-speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel. Another novel low-power circuit called Pseudo-Thyristor presented in another document will replace traditional discriminator and the Regenerative Current Mirror plus Pseudo- Thyristor will provide a full solution for the silicon pixel low-power frontend ASIC.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

The Regenerative Current Mirror: A Very Low Power Front-End Amplifier for Silicon Pixel Detectors

In pixelized detectors, reducing power consumption in the front end ASIC chips becomes a crucial demand. Optimization based on mature pre-amplifier schemes today is unlikely to bring sufficient improvements. A new CMOS front-end gain stage topology with very low power consumption called regenerative current mirror is developed to fulfill the demand. The circuit takes advantage of high speed performance of current amplification while operating with relatively low bias current. The regenerative current mirror uses a NMOS current mirror and a PMOS current mirror, both with nominal gain of 1, to form a loop-back topology that provides a positive feedback. An NMOS FET with an external adjustable voltage applied to it gate terminal is used to limit open loop gain of the current mirrors to be slightly lower than 1. This yields a net gain of the positive feedback loop to be much larger than 1 while operating the current mirrors under relatively low bias currents. Simulation shows that in 65 nm fabrication process, the power consumption of the gain stages suitable for silicon pixel detectors can be controlled < 10 micro-Watts per channel.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Improved modeling of detector response effects in phonon-based crystal detectors used for dark matter searches

Various dark matter search experiments employ phonon-based crystal detectors operated at cryogenic temperatures. Some of these detectors, including certain silicon detectors used by the SuperCDMS Collaboration, are able to achieve single-charge sensitivity when a voltage bias is applied across the detector. The total amount of phonon energy measured by such a detector is proportional to the number of electron-hole pairs created by the interaction. However, crystal impurities and surface effects can cause propagating charges to either become trapped inside the crystal or create additional unpaired charges, producing non-quantized measured energy as a result. A new analytical model for describing these detector response effects in phonon-based crystal detectors is presented. This model improves upon previous versions by demonstrating how the detector response, and thus the measured energy spectrum, is expected to differ depending on the source of events. Finally, we use this model to extract detector response parameters for SuperCDMS HVeV detectors, and illustrate how this robust modelling can help statistically discriminate between sources of events in order to improve the sensitivity of dark matter search experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2022

Characterization of PIPS detectors for measurement of radioxenon

The International Monitoring System arm of the Comprehensive Nuclear-Test-Ban Treaty Organization utilizes sampling of atmospheric radioxenon to scan the world for nuclear testing events. Current designs utilized in the field involve plastic scintillator cells run in coincidence with Sodium Iodide (NaI) or High Purity Germanium (HPGe) detectors. The use of plastic scintillators as electron detectors exhibit some issues in comparison to other materials. Silicon detectors are analyzed as an alternative to plastic scintillators for beta detection based on their higher energy resolution and lowered memory effect. A radioxenon detection setup was created with the intent of measuring radioxenon samples using coincidence counting between silicon and NaI detectors as well as silicon and HPGe. Finally, the absolute efficiency of both setups is calculated and compared.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

DOE OSTI2026

Pixel-Strip Module Testing and Performance Analysis for the CMS Phase-2 Outer Tracker Upgrade

In response to the demanding environment of the High-Luminosity Large Hadron Collider (HL-LHC), the Compact Muon Solenoid (CMS) Experiment's Outer Tracker is being replaced with a lighter, higher-granularity, radiation-tolerant silicon detector capable of providing tracking information directly to the Level-1 trigger system. The new Outer Tracker consists of Pixel-Strip (PS) and Strip-Strip (2S) transverse momentum (pT) modules, which are assembled and tested at, among other centers, Fermilab's Silicon Detector Facility. PS modules consist of a pixel sensor, a strip sensor, and multiple application-specific integrated circuits (ASICs). This poster studies the performance of MaPSAs, silicon macro-pixel sensors bump-bonded to 16 macro-pixel ASICS. It presents the testing procedures for MaPSAs and MaPSA-strip sensor sub-assemblies, as well as the results of calibration and performance studies of two PS modules before and after irradiation. These results assess the impact of irradiation on module performance, providing insight into the modules' expected performance in the HL-LHC environment.

Kimrey, Emerson [Scripps College]↗

DOE OSTI2020

Charge collection and electrical characterization of neutron irradiated silicon pad detectors for the CMS High Granularity Calorimeter

The replacement of the existing endcap calorimeter in the Compact Muon Solenoid (CMS) detector for the high-luminosity LHC (HL-LHC), scheduled for 2027, will be a high granularity calorimeter. It will provide detailed position, energy, and timing information on electromagnetic and hadronic showers in the immense pileup of the HL-LHC. The High Granularity Calorimeter (HGCAL) will use 120-, 200-, and 300-$\mu\textrm{m}$ thick silicon (Si) pad sensors as the main active material and will sustain 1-MeV neutron equivalent fluences up to about $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$. In order to address the performance degradation of the Si detectors caused by the intense radiation environment, irradiation campaigns of test diode samples from 8-inch and 6-inch wafers were performed in two reactors. Characterization of the electrical and charge collection properties after irradiation involved both bulk polarities for the three sensor thicknesses. Since the Si sensors will be operated at -30 $^\circ$C to reduce increasing bulk leakage current with fluence, the charge collection investigation of 30 irradiated samples was carried out with the infrared-TCT setup at -30 $^\circ$C. TCAD simulation results at the lower fluences are in close agreement with the experimental results and provide predictions of sensor performance for the lower fluence regions not covered by the experimental study. All investigated sensors display 60$\%$ or higher charge collection efficiency at their respective highest lifetime fluences when operated at 800 V, and display above 90$\%$ at the lowest fluence, at 600 V. The collected charge close to the fluence of $10^{16}~\textrm{n}_\textrm{eq}\textrm{cm}^{-2}$ exceeds 1 fC at voltages beyond 800 V.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Developing the S 32 ( p , d ) S * 31 ( p ) ( γ ) reaction to probe the P 30 ( p , γ ) S 31 reaction rate in classical novae

Background: The 30 P(p,γ) 31 S reaction rate is one of the largest remaining sources of uncertainty in the final abundances of nuclei created in a classical nova involving a ONe white dwarf. The reaction rate directly influences silicon isotopic ratios, which are used as identifiers of presolar grains with nova origins. Additionally, the uncertainty in the 30 P(p,γ) 31 S reaction rate has been found to limit the use of nova nuclear thermometers based on observations of elemental ratios in nova ejecta. Purpose: Reduce uncertainties in the nuclear data for proton-unbound states in 31 S, which act as resonances for the 30 P(p,γ) 31 S reaction at classical nova temperatures, and develop a technique for high efficiency, high-resolution reaction-decay coincidence measurements. Methods: Here, the 32 S(p,d) 31 S reaction was used to populate the states of interest in 31 S. The experiment was performed at the Texas A&M Cyclotron Institute using the LLNL Hyperion array for the detection of charged particles and γ rays. A downstream silicon telescope was used to select reaction deuterons, and a single upstream silicon detector was used to measure protons emitted in the decay of unbound 31 S levels. Results: Several states in 31 S above the proton separation energy were observed to have been populated. Decay protons from the resonant states in 31 S were identified as events in the upstream silicon detectors that came in coincidence with deuterons in the downstream telescope. Protons emitted from these states were measured and branching ratios extracted. Conclusions: While no new reaction rate is derived, spin-parity assignments for several higher-lying proton unbound states have been confirmed. Measured p 0 branching ratios for these levels have been compared to previous measurements with good agreement, and in some cases provided a reduction in uncertainty. The previously identified T = 3/2 state may have been incorrectly assigned a large p 0 branching ratio in a previous measurement. The technique of measuring reaction-decay coincidences with a particle-gamma setup appears promising.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2025

SENSEI at SNOLAB: Single-Electron Event Rate and Implications for Dark Matter

We present results from data acquired by the SENSEI experiment at SNOLAB after a major upgrade in May 2023, which includes deploying 16 new sensors and replacing the copper trays that house the CCDs with a new light-tight design. We observe a single-electron event rate of (1.39±0.11)×10^{-5} e^{-}/pix/day, corresponding to (39.8±3.1) e^{-}/gram/day. This is an order-of-magnitude improvement compared to the previous lowest single-electron rate in a silicon detector and the lowest for any photon detector in the wavelength range between near-infrared and ultraviolet. We use these data to obtain a 90% confidence level upper bound of 1.53×10^{-5} e^{-}/pix/day and to set constraints on sub-GeV dark matter candidates that produce single-electron events. We hypothesize that the data taken at SNOLAB in the previous run, with an older tray design for the sensors, contained a larger rate of single-electron events due to light leaks. We test this hypothesis using data from the SENSEI detector located in the MINOS cavern at Fermilab.

dark matter↗

DOE OSTI2021

Measurement of the bulk radioactive contamination of detector-grade silicon with DAMIC at SNOLAB

We present measurements of bulk radiocontaminants in the high-resistivity silicon CCDs from the DAMIC experiment at SNOLAB. We utilize the exquisite spatial resolution of CCDs to discriminate between α and β decays, and to search with high efficiency for the spatially-correlated decays of various radioisotope sequences. Using spatially-correlated β decays, we measure a bulk radioactive contamination of 32 Si in the CCDs of 140 ± 30 μBq/kg, and place an upper limit on bulk 210 Pb of < 160 μBq/kg. Using similar analyses of spatially-correlated α and β decays, we set upper limits of < 11 μBq/kg (0.9 ppt) on 238 U and < 7.3 μBq/kg (1.8 ppt) on 232 Th in the bulk silicon. The ability of DAMIC CCDs to identify and reject spatially-coincident backgrounds, particularly from 32 Si, has significant implications for the next generation of silicon-based dark matter experiments, where β's from 32 Si decay will likely be a dominant background.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2024

Readout optimization of multi-amplifier sensing charge-coupled devices for single-quantum measurement

The non-destructive readout capability of the Skipper Charge Coupled Device (CCD) has been demonstrated to reduce the noise limitation of conventional silicon devices to levels that allow single-photon or single-electron counting. The noise reduction is achieved by taking multiple measurements of the charge in each pixel. These multiple measurements come at the cost of extra readout time, which has been a limitation for the broader adoption of this technology in particle physics, quantum imaging, and astronomy applications. This work presents recent results of a novel sensor architecture that uses multiple non-destructive floating-gate amplifiers in series to achieve sub-electron readout noise in a thick, fully-depleted silicon detector to overcome the readout time overhead of the Skipper-CCD. This sensor is called the Multiple-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier, and the measurements from multiple amplifiers can be combined to further reduce the readout noise. We will show results obtained for sensors with 8 and 16 amplifiers per readout stage in new readout operations modes to optimize its readout speed. The noise reduction capability of the new techniques will be demonstrated in terms of its ability to reduce the noise by combining the information from the different amplifiers, and to resolve signals in the order of a single photon per pixel. The first readout operation explored here avoids the extra readout time needed in the MAS-CCD to read a line of the sensor associated with the extra extent of the serial register. The second technique explore the capability of the MAS-CCD device to perform a region of interest readout increasing the number of multiple samples per amplifier in a targeted region of the active area of the device.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗