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At least 55 records · Page 3

Nondestructive Strain Measurement System Used to Determine Surface Strain on Fibers

Small-diameter structural fibers are being considered as reinforcements for high temperature ceramic matrix composite materials, and thus they require characterization. At the NASA Lewis Research Center, a nondestructive optical technique was used to determine surface strain on a structural fiber, in real time, as it was pulled in a tensile test machine. With this technique, interference or speckle patterns from the laser illuminated fiber test specimen are recorded. As the fiber is pulled, its speckle pattern shifts in proportion to the strain, translation, and rotation components of the sample deformation. Shifting speckle patterns are detected in real time by two linear charge-coupled discharge (CCD) camera arrays, and the images are processed by a hardware correlator. Surface strain is selectively detected on fibers with diameters on the order of 100 mm and can be resolved to 19 microstrain. This system was designed to be robust and compact and generally does not require surface preparation of the structural fibers. For strain detection, two laser beams are positioned incident on the structural fiber being tested, as shown in the photograph, where the test specimen is mounted in a tensile test machine via two coupons. As the fiber is pulled, the speckle pattern produced from each laser beam is detected by one of two CCD arrays located inside the tube on the right side of the photograph.

Tuma, Margaret L.

Dose, LET, time and strain dependence of radiation-induced 53BP1 foci in 15 mouse strains ex vivo and associations to in vivo radiation susceptibility

We present a comparative analysis on the repair of radiation-induced DNA damage ex vivo in 15 strains of mice, including 5 inbred reference strains and 10 collaborative-cross strains, of both sexes. Non-immortalized primary skin fibroblasts derived from 76 mice were subjected to both low- and high-LET radiation (0.1, 1 and 4 Gy of X rays; 1.1 and 3 particles/100μm2 of 350 MeV/n 40Ar and 600 MeV/n 56Fe). Automated image quantification of 53BP1 radiation-induced foci (RIF) during the first 4-48 h post-irradiation was performed as a function of dose and LET. Similarly to what we had previously reported for immortalized human cell lines [1], we observed a saturation of RIF number with dose at 4h post-irradiation, with more RIF/Gy for lower LET (X rays and 40Ar) compared to 56Fe. However at later time points (24h and above), the trend was inverted with more RIF/Gy for higher LET. Our data suggest that multiple DSBs cluster into RIF: as the linear density of DSBs increases with LET, so does the probability of having more DSBs per RIF, which makes it more difficult for cells to fully resolve high-LET-induced RIF, explaining the hypersensitivity to high-LET radiation despite a low number of RIF. Taking into account the amount of clustering at a given dose and LET, but also the kinetics of DNA damage repair, we introduced a novel mathematical formalism to evaluate the number of remaining RIF over time. We showed that the newly introduced kinetic metrics can be used as surrogate biomarkers for in vivo radiation toxicity, with potential applications in radiotherapy and human space exploration. In particular, we observed an association between the repairable fraction of RIF measured in vitro and survival levels of immune cells collected from irradiated mice. Moreover, the speed of DNA damage repair correlated with spontaneous cancer incidence data collected from the Mouse Tumor Biology database, suggesting a relationship between the efficiency of DSB repair after irradiation and cancer risk. In addition to the efficacy of repair and persistent RIF levels, even the amount of spontaneous foci without irradiation was shown to be strain dependent, indicating that these phenotypes are at least partially driven by genetics, and supporting their potential as indicators of individual radiation sensitivity. [1] Neumaier, T., et al., PNAS, 2012 (8) 109:443

Radiation, DNA damage, repair kinetics

Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement, Strain, Defects, and Transport Properties of Tensile-Strained Ge

Device-quality tensile-strained Ge (ε-Ge) grown on a large bandgap semiconductor with superior electrical and optical carrier confinement is essential for group-IV-based optoelectronics. Properties of ε-Ge active layers synthesized on In 0.24 Ga 0.76 As buffers with two different surface terminations─arsenic-rich and indium-rich─were experimentally demonstrated, highlighting the factors not considered in theoretical calculations. High-resolution X-ray diffraction and Raman spectroscopy analyses of these ε-Ge/In 0.24 Ga 0.76 As heterostructures confirmed the fully strained (1.6%) and partially relaxed (0.82%) nature of the ε-Ge bonded with arsenic-terminated (Ge As-terminated ) and indium-terminated (Ge In-terminated ) In 0.24 Ga 0.76 As stressors, respectively. High-resolution cross-sectional transmission electron microscopy showed a coherent, sharp, and fully strained ε-Ge/In 0.24 Ga 0.76 As heterointerface in the Ge As-terminated heterostructure, whereas microtwin defects were present in the Ge In-terminated heterostructure. These heterostructures were further characterized by evaluating the minority carrier lifetimes, high for Ge As-terminated (525 ns) and low for Ge In-terminated (69 ns), using the photoconductive decay technique. Moreover, band alignment was constructed using X-ray photoelectron spectroscopy, where the Ge As-terminated heterostructure revealed that both holes and electrons were confined within the ε-Ge active layer as a type-I band alignment with ΔE V, As-terminated = 0.22 eV and ΔE C,As-terminated = 0.38 eV. On the other hand, the Ge In-terminated heterostructure exhibited a type-II band alignment with ΔE V,In-terminated = – 0.02 eV and ΔE C,In-terminated = 0.53 eV. Furthermore, the magnetotransport properties revealed high mobility (321 cm 2 /(V s)) with single-electron transport in Ge As-terminated heterostructure and low mobility (3.34 cm 2 /(V s)) with multihole transport in the Ge In-terminated heterostructure. Therefore, preferring the ε-Ge on the arsenic-rich surface of In 0.24 Ga 0.76 As stressor over the indium-rich surface during material synthesis offers device-quality materials with high carrier lifetime and superior carrier confinement, which can provide an opportunity to fabricate efficient group-IV-based optoelectronic devices.

36 MATERIALS SCIENCE

Inversion of the strain-life and strain-stress relationships for use in metal fatigue analysis

The paper presents closed-form solutions (collocation method and spline-function method) for the constants of the cyclic fatigue life equation so that they can be easily incorporated into cumulative damage analysis. The collocation method involves conformity with the experimental curve at specific life values. The spline-function method is such that the basic life relation is expressed as a two-part function, one applicable at strains above the transition strain (strain at intersection of elastic and plastic lines), the other below. An illustrative example is treated by both methods. It is shown that while the collocation representation has the advantage of simplicity of form, the spline-function representation can be made more accurate over a wider life range, and is simpler to use.

Manson, S. S.

A resistance strain gage with repeatable apparent strain to 800 C

Experimental PdCr temperature-compensated resistance static-strain gages are described. The gages are developed in both fine-wire and thin-film forms. It is found that a PdCr wire strain gage coated with a flame-sprayed mixture of alumina and 4 wt pct zirconia demonstrates the smallest variation in and the best repeatability of apparent strain among the existing gages used at temperatures up to 800 C. Results of preliminary tests indicate uncompensated uncoated thin-film gages have potential usefulness at temperatures up to 1000 C.

Lei, J.-F.

High temperature strain measurement with a resistance strain gage

A PdCr based electrical resistance strain gage was demonstrated in the laboratory to be a viable sensor candidate for static strain measurement at high temperatures. However, difficulties were encountered while transferring the sensor to field applications. This paper is therefore prepared for recognition and resolution of the problems likely to be encountered with PdCr strain gages in field applications. Errors caused by the measurement system, installation technique and lead wire attachment are discussed. The limitations and some considerations related to the temperature compensation technique used for this gage are also addressed.

Lei, Jih-Fen

Systems and Methods for Implementing Bulk Metallic Glass-Based Strain Wave Gears and Strain Wave Gear Components

Bulk metallic glass-based strain wave gears and strain wave gear components. In one embodiment, a strain wave gear includes: a wave generator; a flexspline that itself includes a first set of gear teeth; and a circular spline that itself includes a second set of gear teeth; where at least one of the wave generator, the flexspline, and the circular spline, includes a bulk metallic glass-based material.

Hofmann, Douglas C.

Systems and Methods for Implementing Tailored Metallic Glass-Based Strain Wave Gears and Strain Wave Gear Components

Systems and methods in accordance with embodiments of the invention implement tailored metallic glass-based strain wave gears and strain wave gear components. In one embodiment, a method of fabricating a flexspline of a strain wave gear includes: forming a MG-based composition into a flexspline using one of a thermoplastic forming technique and a casting technique; where the forming of the MG-based composition results in a formed MG-based material; where the formed flexspline is characterized by: a minimum thickness of greater than approximately 1 mm and a major diameter of less than approximately 4 inches.

Hofmann, Douglas C.

Generalized grain boundary constitutive description implemented in a strain-gradient large-strain FFT-based formulation: Application to nano-metallic laminates

Herein this paper presents a general treatment of grain boundary constitutive behavior in the context of strain-gradient (SG) plasticity, and its numerical implementation in a large-strain (LS) elasto-viscoplastic (EVP) fast Fourier transform (FFT)-based micromechanical model. Two novel grain boundary constitutive equations are proposed, allowing for more accurate description of the Burgers vector flow at the grain boundary. The capabilities of the generalized SG-LS-EVPFFT formulation are illustrated for the case of kink-band formation during layer-parallel compression of nano-metallic laminates (NMLs), requiring consideration of the interaction between dislocations and interfaces.

36 MATERIALS SCIENCE

A plane strain analysis of the blunted crack tip using small strain deformation plasticity theory

A deformation plasticity analysis of the tip region of a blunted crack in plane strain is presented. The power hardening material is incompressible both elastically and plastically, in order to simulate behavior of a stress freezing material above critical temperature. Stress and displacement fields surrounding the crack tip are presented. The results indicate that the maximum stress seen at the crack tip is indeed limited and is determined by the tensile properties; however, the scale over which the stresses act is dependent on the loading. Comparisons are good between the forward crack tip displacement and micro-fractographic measurments of stretch zones observed in plane strain fracture toughness tests.

Mcgowan, J. J.

Biaxial load effects on the crack border elastic strain energy and strain energy rate

The validity of the singular solution (first term of a series representation) is investigated for the crack tip stress and displacement field in an infinite sheet with a flat line crack with biaxial loads applied to the outer boundaries. It is shown that if one retains the second contribution to the series approximations for stress and displacement in the calculation of the local elastic strain energy density and elastic strain energy rate in the crack border region, both these quantities have significant biaxial load dependency. The value of the J-integral does not depend on the presence of the second term of the series expansion for stress and displacement. Thus J(I) is insensitive to the presence of loads applied parallel to the plane of the crack.

Eftis, J.

High temperature static strain measurement with an electrical resistance strain gage

An electrical resistance strain gage that can supply accurate static strain measurement for NASP application is being developed both in thin film and fine wire forms. This gage is designed to compensate for temperature effects on substrate materials with a wide range of thermal expansion coefficients. Some experimental results of the wire gage tested on one of the NASP structure materials, i.e., titanium matrix composites, are presented.

Lei, Jih-Fen

Thin Film Ceramic Strain Sensor Development for Harsh Environments: Interim Report on Identification of Candidate Thin Film Ceramics to Test for Viability for Static Strain Sensor Development

The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in propulsion system applications. In order to have a more passive method of negating changes of resistance due to temperature, an effort is underway at NASA Glenn to develop high temperature thin film ceramic static strain gauges for application in turbine engines, specifically in the fan and compressor modules on blades. Other applications can be on aircraft hot section structures and on thermal protection systems. The near-term interim goal of the research effort was to identify candidate thin film ceramic sensor materials to test for viability and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. This goal was achieved by a thorough literature search for ceramics that have the potential for application as high temperature thin film strain gauges, reviewing potential candidate materials for chemical and physical compatibility with our microfabrication procedures and substrates.

Wrbanek, John D.

Thin Film Ceramic Strain Sensor Development for Harsh Environments: Identification of Candidate Thin Film Ceramics to Test for Viability for Static Strain Sensor Development

The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in propulsion system applications. In order to have a more passive method of negating changes of resistance due to temperature, an effort is underway at NASA GRC to develop high temperature thin film ceramic static strain gauges for application in turbine engines, specifically in the fan and compressor modules on blades. Other applications include on aircraft hot section structures and on thermal protection systems. The near-term interim goal of this research effort was to identify candidate thin film ceramic sensor materials to test for viability and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. This goal was achieved by a thorough literature search for ceramics that have the potential for application as high temperature thin film strain gauges, reviewing potential candidate materials for chemical & physical compatibility with NASA GRC's microfabrication procedures and substrates.

Wrbanek, John D.

Total strain version of strainrange partitioning for thermomechanical fatigue at low strains

A new method is proposed for characterizing and predicting the thermal fatigue behavior of materials. The method is based on three innovations in characterizing high temperature material behavior: (1) the bithermal concept of fatigue testing; (2) advanced, nonlinear, cyclic constitutive models; and (3) the total strain version of traditional strainrange partitioning.

Halford, G. R.