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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Overview of processing activities aimed at higher efficiencies and economical production

An overview of processing activities aimed at higher efficiencies and economical production were presented. Present focus is on low-cost process technology for higher-efficiency cells of up to 18% or higher. Process development concerns center on the use of less than optimum silicon sheet, the control of production yields, and making uniformly efficient large-area cells. High-efficiency cell factors that require process development are bulk material perfection, very shallow junction formation, front-surface passivation, and finely detailed metallization. Better bulk properties of the silicon sheet and the keeping of those qualities throughout large areas during cell processing are required so that minority carrier lifetimes are maintained and cell performance is not degraded by high doping levels. When very shallow junctions are formed, the process must be sensitive to metallizatin punch-through, series resisitance in the cell, and control of dopant leaching during surface passivation. There is a need to determine the sensitivity to processing by mathematical modeling and experimental activities.

Bickler, D. B.↗
NASA NTRS1977

Remote sensing of atmospheric water vapor, liquid water and wind speed at the ocean surface by passive microwave techniques from the Nimbus-5 satellite

The microwave brightness temperature measurements for Nimbus-5 electrically scanned microwave radiometer and Nimbus E microwave spectrometer are used to retrieve the atmospheric water vapor, liquid water and wind speed by a quasi-statistical retrieval technique. It is shown that the brightness temperature can be utilized to yield these parameters under various weather conditions. Observations at 19.35 GHz, 22.235 GHz and 31.4 GHz were input to the regression equations. The retrieved values of these parameters for portions of two Nimbus-5 orbits are presented. Then comparison between the retrieved parameters and the available observations on the total water vapor content and the surface wind speed are made. The estimated errors for retrieval are approximately 0.15 g/sq cm for water vapor content, 6.5 mg/sq cm for liquid water content and 6.6 m/sec for surface wind speed.

Chang, A. T. C.↗
NASA NTRS1979

Remote sensing of atmospheric water vapor, liquid water, and wind speed at the ocean surface by passive microwave techniques from the Nimbus 5 satellite

The microwave brightness temperature measurements for Nimbus 5 electrically scanned microwave radiometer (ESMR) and Nimbus-E microwave spectrometer (NEMS) are used to retrieve the atmospheric water vapor, liquid water, and wind speed by a quasi-statistical retrieval technique. It is shown that the brightness temperature can be utilized to yield these parameters under various weather conditions. Observations at 19.35, 22.235, and 31.4 GHz were input to the regression equations. The retrieved values of these parameters for portions of two Nimbus 5 orbits are presented. Then comparison between the retrieved parameters and the available observations on the total water vapor content and the surface wind speed are made.

Chang, A. T. C.↗
NASA NTRS1986

Surface-based passive microwave observations of sea ice in the Bering and Greenland Seas

Brightness temperatures of sea ice was measured during the Marginal Ice Zone Experiment (MIZEX) field experiments in February in the Bering Sea and in June/July in the northern Greenland Sea. In the Bering Sea thin growing sea ice types from black ice to 40 cm thick snow covered floes were investigated. Brightness temperatures increase with ice thickness up to 10 cm from values of 100 K for open water to as high as 250 K (e = 0.97) for thick ice, and a moderate dependence on snow thickness is found. In the Greenland Sea thick first and multiyear (FY, MY) ice types were studied. Brightness temperatures vary, depending on the daily melt-freeze cycle superimposed on the seasonal warming, ranging from near blackbody values for melting conditions to multiyear-like spectra when the surface layers refroze. The melt season was sufficiently advanced, however, that FY and MY ice could not be differentiated radiometrically.

Grenfell, T. C.↗
NASA NTRS1991

High performance etchant for thinning p(+)-InP and its application to p(+)n InP solar cell fabrication

An etchant, namely (o-H3PO4)u: (HNO3)v: (H2O2)t: (H2O)1-(u+v+t) is developed for thinning, after contacting, the p(+) emitter layer of p(+)n InP structures made by thermal diffusion. Varying u, v, and t, reproducible etch rates of 5 to 110 nm/min are obtained. After thinning the 0.6- to 2.5-micron thick p(+) InP layer down to 60-250 nm, specular surfaces are obtained at up to 80 nm/min etch rate. Due to its intrinsic qualities the resisual P-rich oxide after thinning the emitter layer provides surface passivation of p(+) InP surfaces and can also serve as a first-layer AR coating.

Faur, Maria↗
NASA NTRS1990

Development of advanced silicon solar cells for Space Station Freedom

This report describes the development of large area high efficiency wrapthrough solar cells for Space Station Freedom. The goal of this contract was the development and fabrication of 8 x 8 cm coplanar back contact solar cells with a minimum output of 1.039 watts/cell. The first task in this program was a modeling study to determine the optimum configuration of the cell and to study the effects of surface passivation, substrate resistivity, and back surface field on the BOL and EOL performance. In addition, the optical stack, including the cell cover, AR coatings, and Kapton blanket, was modeled to optimize 'on orbit' operation. The second phase was a manufacturing development phase to develop high volume manufacturing processes for the reliable production of low recombination velocity boron back surface fields, techniques to produce smooth, low leakage wrapthrough holes, passivation, photoresist application methods, and metallization schemes. The final portion of this program was a pilot production phase. Seven hundred solar cells were delivered in this phase. At the end of the program, cells with average efficiencies over 13 percent were being produced with power output in excess of 1.139 watts/cell, thus substantially exceeding the program goal.

Lillington, David R.↗
NASA NTRS2004

Passivating Window/First Layer AR Coating for Space Solar Cells

Chemically grown oxides, if well designed, offer excellent surface passivation of the emitter surface of space solar cells and can be used as effective passivating window/first layer AR coating. In this paper, we demonstrate the effectiveness of using a simple room temperature wet chemical technique to grow cost effective passivating layers on solar cell front surfaces after the front grid metallization step. These passivating layers can be grown both on planar and porous surfaces. Our results show that these oxide layers: (i) can effectively passivate the from the surface, (ii) can serve as an effective optical window/first layer AR coating, (iii) are chemically, thermally and UV stable, and (iv) have the potential of improving the BOL and especially the EOL efficiency of space solar cells. The potential of using this concept to simplify the III-V based space cell heterostructures while increasing their BOL and EOL efficiency is also discussed.

Faur, Mircea↗
NASA NTRS1985

Heavy doping considerations and measurements in high-efficiency cells

Theoretical work on heavily doped silicon was described. Heavily doped polysilicon was used as a back-surface passivant replacing the usual back-surface field (BSF). Very good first results were achieved and there is the promise of a simple, low temperature deposition process. Short-circuit current-decay measurement methods were also covered.

Lindholm, F.↗
NASA NTRS2009

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

imagers↗
NASA NTRS2010

Robotic Arm Manipulator Using Active Control for Sample Acquisition and Transfer, and Passive Mode for Surface Compliance

A robotic arm that consists of three joints with four degrees of freedom (DOF) has been developed. It can carry an end-effector to acquire and transfer samples by using active control and comply with surface topology in a passive mode during a brief surface contact. The three joints are arranged in such a way that one joint of two DOFs is located at the shoulder, one joint of one DOF is located at the elbow, and one joint of one DOF is located at the wrist. Operationally, three DOFs are moved in the same plane, and the remaining one on the shoulder is moved perpendicular to the other three for better compliance with ground surface and more flexibility of sample handling. Three out of four joints are backdriveable, making the mechanism less complex and more cost effective

Liu, Jun↗
NASA NTRS1985

A mosaic infrared sensor for space astronomy, phase 3

Short wavelength (1 to 3 micron) HgCdTe mosaic detector arrays for space astronomy purposes were fabricated and studied. Honeywell will test and analyze these arrays at moderate temperatures (300-130K). Low temperature testing will be performed at the University of Hawaii. Short wavelength mosaic arrays were fabricated on three wafers and one array from each wafer was tested and analyzed. The p-type base carrier concentration on these wafers was an order of magnitude lower than typically used so far on this program (10 to the 14/cc as compared to 10 to the 15/cc). Tunneling currents are expected to decrease with this decrease in carrier concentration, resulting in improved performance at very low temperatures. The risk with such a low carrier concentration is that fixed charge in the surface passivating layer must be carefully controlled to prevent surface inversion layers.

Sood, A. K.↗
NASA NTRSDate not supplied

A Passive fuel-Cell Surface power System (PaCeSS)

This effort produces a fully-passive surface power generation capability for fuel cell technology. The concept replaces the actively pumped thermal management of a state of the art (SOA) fuel cell/electrolyzer stack with a passive 2-phase thermosyphon for heat transport and a passive shape memory actuating radiator for temperature management. The concept addresses NASA fuel cell technology roadmap needs for greater reliability and longer operating life by eliminating life limiting elements of SOA fuel cell system design that drive failure modes associated with moving parts and control complexity. Applications map to surface power (primary fuel cell), surface energy storage (regenerable fuel cell) and in-situ resource utilization (electrolyzer/unitized reversible fuel cell). The first year of this effort concluded with independent demonstrations of 2-phase thermosyphon heat transport from a simulated fuel cell and temperature driven actuation of a shape memory actuating radiator. Results are in-character with underlying physics and demonstrate the potential to realize the objectives of this concept. his effort produces a fully-passive surface power generation capability for fuel cell technology. The concept replaces the actively pumped thermal management of a state of the art (SOA) fuel cell/electrolyzer stack with a passive 2-phase thermosyphon for heat transport and a passive shape memory actuating radiator for temperature management.

deionized water↗
NASA NTRS1998

X-Ray Photoelectron Spectroscopy Study of the Heating Effects on Pd/6H-SiC Schottky Structure

X-ray photoelectron spectroscopy is used to study the effects of heat treatment on the Pd/6H-SiC Schottky diode structure. After heating the structure at 425 C for 140 h, a very thin surface layer of PdO mixed with SiO(x) formed on the palladium surface of the Schottky structure. Heat treatment promoted interfacial diffusion and reaction which significantly broadened the interfacial region. In the interfacial region, the palladium concentration decreases with depth, and the interfacial products are Pd(x)Si (x = 1,2,3,4). In the high Pd concentration regions, Pd4Si is the major silicide component while gr and Pd2Si are major components in the low Pd concentration region. At the center of the interface, where the total palladium concentration equals that of silicon, the concentrations of palladium associated with various palladium silicides (Pd(x)Si, x= 1,2,3,4) are approximately equal. The surface passivation layer composed of PdO and SiO, may significantly affect the electronic and catalytic properties of the surface of the Schottky diode which plays a major role in gas detection. The electronic properties of the Schottky structure may be dominated by a (Pd+Pd(x)Si)/SiC interface. In order to stabilize the properties of the Schottky structure the surface and interface diffusion and reactions must be controlled.

Chen, Liang-Yu↗
NASA NTRS2013

The DUV Stability of Superlattice-Doped CMOS Detector Arrays

In this paper, we present experimental results and band structure calculations that illuminate the unique properties of superlattice-doped detectors. Numerical band structure calculations are presented to analyze the dependencies of surface passivation on dopant profiles and interface trap densities (Figure 3). Experiments and calculations show that quantum-engineered surfaces, grown at JPL by low temperature molecular beam epitaxy, achieve a qualitative as well as quantitative uniqueness in their near-immunity to high densities of surface and interface traps.

doped silicon surfaces↗
NASA NTRS1994

InP solar cell with window layer

The invention features a thin light transmissive layer of the ternary semiconductor indium aluminum arsenide (InAlAs) as a front surface passivation or 'window' layer for p-on-n InP solar cells. The window layers of the invention effectively reduce front surface recombination of the object semiconductors thereby increasing the efficiency of the cells.

Jain, Raj K.↗
NASA NTRS1989

Surface Halogenation Of High-Temperature Superconductors

Surface halogenation experimental technique of postgrowth nonaqueous chemical processing of high-temperature superconductors. Research continues in use of technique to obtain superconducting and/or passivated surfaces, to etch bulk superconductors, and to make low-resistance electrical contacts. Most promising etchant is bromine dissolved in such polar nonaqueous solvents as alchols, acetone, or ether. Etchant appears to act only on surface without adversely affecting superconducting bulk of film.

Vasquez, Richard P.↗