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Electronic attenuation of 10 to 130 MHz longitudinal ultrasonic waves in superconducting high purity Tl, noting energy gap anisotropy
Electronic attenuation of 10 to 130 MHz longitudinal ultrasonic waves in nonsuperconducting high purity Tl, noting anisotropy and measurements below 4.2 K
Plastic deformation effects on superconductivity of wire specimens of high purity Pb, In and Tl cold worked at liquid He and annealed
The yields of stable isotopes of Bi, Pb, Tl and Hg as well as yields of Pb-205 are calculated with a parametrized model for 'mini r-processing' in the Ne, O, C-rich zones of explosive burning in massive stars. The Pb isotopic compositions stand out by their comparatively low Pb-207 yields and by the fact that this r-process variant yields Pb-204 quite abundantly. The average Pb-205/Pb-204 yield ratio of 6.1 is the same order of magnitude as yield ratios deduced for s-processing. The Hg from this mini r-process looks like normal solar-system mercury, but with Hg-196 missing and the light s-isotopes A = 198, 199, 200 and 201 depleted (especially the odd-A species).
Epitaxial (Tl,Bi)Sr(1.6)Ba(0.4)Ca2Cu3O(x) ((Tl,Bi)-1223) thin films on (100) single crystal LaAlO3 substrates were synthesized by a two-step procedure. Phase development, microstructure, and relationships between film and substrate were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). Resistance versus temperature, zero-field-cooled and field cooled magnetization, and transport critical current density (J(sub c)) were measured. The zero-resistance temperature was 105-111 K. J(sub c) at 77 K and zero field was greater than 2 x 10(exp 6) A/sq cm. The films exhibited good flux pinning properties.
Superconducting Tl2Ba2Ca2Cu3O10 (Tl2223) was ground to powder. Mixture with silver powder (0-80% weight) and press to desired shape. After proper annealing, one can get good silver-content Tl2223 bulk superconductor. It is time-stable and has good superconducting property as same as pure Tl2223. It also has better mechanical property and far better thermal cycle property than pure Tl2223.
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The performance of optical and electronic materials, and devices are affected significantly in space due to exposure from high energy radiations. We have been investigating the effect of -ray radiations on multifunctional binary and ternary selenide and halide crystals. These materials have shown excellent performance for the wavelength conversion in MWIR and LWIR regions, acousto-optics, and great potential for radiation detection. Crystals with high Z materials such as thallium, mercury and lead based compounds have great potential for the development of a variety of devices and components suitable for space applications. We will report on the characteristics of several halides including mercurous halides (Hg2X2, X= Cl, Br, I), Thallium mercury iodide (Tl4HgI4) and thallium arsenic selenide and thallium gallium selenide, and ternary selenides. These crystals, synthesized with high purity source materials, will be evaluated by studying optical characteristics and measuring resistivity after exposure to a 137Cs -ray source.
Here, the Bridgman crystal growth and scintillation properties of both undoped and Tl-doped Cs 3 Cu 2 I 5 are presented. This material is very attractive for gamma and X-ray detection applications, with a density of 4.53 g/cm 3 and effective atomic number of 51.9. Undoped Cs 3 Cu 2 I 5 had a light yield of 41,500 photons/MeV, with an energy resolution of 4.4% at 662 keV. Thallium doping at 0.5 mol % resulted in a much-improved scintillation response, in which light yield increased to 98,200 photons/MeV and energy resolution reduced to 3.3% at 662 keV. The X-ray excited emission is centered at 442 nm for the undoped and 500 nm for the Tl-doped crystals. The undoped emission is broad, typical of excitonic emission, while thallium doping results in an even broader band with features of both the undoped and thallium defect-mediated emissions.
The deposition of Tl-Ba-Ca-Cu-O thick films by spray pyrolyzing a Ba-Ca-Cu-O precursor film and diffusing thallium into the film to form the superconducting phase is examined. This approach was taken to reduce exposure to thallium and its health and safety hazards. The Tl-Ba-Ca-Cu-O system was selected because it has very attractive features which make it appealing to device and manufacturing engineering. Tl-Ba-Ca-Cu-O will accommodate a number of superconducting phases. This attribute makes it very forgiving to stoichiometric fluctuations in the bulk and film. It has excellent thermal and chemical stability, and appears to be relatively insensitive to chemical impurities. Oxygen is tightly bound into the systems, consequently there is no orthorhombic (conductor) to tetragonal (insulator) transition which would affect a component's lifetime. More significantly, the thallium based superconductors appear to have harder magnetic properties than the other high-Tc oxide ceramics. Estimates using magnetoresistance measurements indicate that at 77 K Tl2Ba2CaCu2O10 will have an upper critical field, H(sub c2) fo 26 Tesla for applied fields parallel to the c-axis and approximately 1000 Tesla for fields oriented in the a-b plane. Results to date have shown that superconducting films can be reproducibly deposited on 100 oriented MgO substrates. One film had a zero resistance temperature of 111.5 K. Furthermore, x ray diffraction analysis of the films showed preferential c-axis orientation parallel to the plane of the substrate. These results have now made it possible to consider the manufacture of a superconducting tape wire which can be configured into a topology useful for high-field magnet designs. The research which leads to the preparation of these films and plans for further development are reviewed.
Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.
Increasing threats of radiological weapons have revitalized the researches for low cost large volume -ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage. A low thermal gradient and high purity source material were used to reduce thermal stresses in large crystals. By improving the purification of the as supplied source materials very high quality thallium, selenium and arsenic was achieved for preparing stoichiometric Tl3AsSe3 compound. Low gradient (<20K/cm) and slow growth rate (1-2 cm/day) produced crystals with reduced stress. Crystals did not show any micro cracking during fabrication of crystals grown with high purity and at low thermal gradient. Since thallium is a major component and very sensitive to surface oxidation, removal of surface and bulk oxides is very important. Intentional increase in the growth rate from 1cm/day to higher speed (>5cm/day) showed very different morphologies on the surface of the crystals. Electrical resistivity was one order of magnitude higher than previously reported value and it was observed to be constant as the function of frequency.
There is a strong need for developing multifunctional materials to reduce the cost of applied material without compromising the performance of the detectors, devices and sensors. The materials design, processing, growth and fabrication of bulk and nanocrystals and fabrication into devices and sensors involve huge cost and resources including a multidisciplinary team of experts. Because of this reason, prediction of multifunctionality of materials before design and development should be evaluated. Chalcogenides and chalcopyrites are a very exciting class of materials for developing multifunctionality. Materials such as Gallium selenide GaSe and zinc selenide ZnSe have been proven to be excellent examples. GaSe is a layered material and very difficult to grow in large crystal. However, it's ternary and quaternary analogs such as thallium gallium selenide TlGaSe2, thallium gallium selenide sulfide TlGaSe2-xSs, thallium arsenic selenide Tl3AsSe3, silver gallium selenide AgGaGe3Se8, AgGaGe5Se12 and several others have shown great promise for multifunctionality. Several of these materials have shown good efficiency for frequency conversion (nonlinear optical NLO), electro-optic modulation, and acousto-optic tunable filters and imagers suitable for the visible, near-infrared wavelength, mid wave infrared (MWIR), long wave infrared (LWIR) and even up to Tera hertz wavelength (THW) regions. In addition, this class of materials have demonstrated low absorption coefficients and power handling capability in the systems. Also, these crystals do not require post growth annealing, show very large transparency range and fabricability.
Abstract Thallium chemistry is experiencing unprecedented importance. Therefore, it is valuable to characterize some of the simplest thallium compounds. Stationary points along the singlet and triplet TlH potential energy surface have been characterized. Stationary point geometries were optimized with the CCSD(T)/aug‐cc‐pwCVQZ‐PP method. Harmonic vibrational frequencies were computed at the same level of theory while anharmonic vibrational frequencies were computed at the CCSD(T)/aug‐cc‐pwCVTZ‐PP level of theory. Final energetics were obtained with the CCSDT(Q) method. Basis sets up to augmented quintuple‐zeta cardinality (aug‐cc‐pwCV5Z‐PP) were employed to obtain energetics in order to extrapolate to the complete basis set limits using the focal point approach. Zero‐point vibrational energy corrections were appended to the extrapolated energies in order to determine relative energies at 0 K. It was found that the planar dibridged isomer lies lowest in energy while the linear structure lies highest in energy. The results were compared to other group 13 MH (M = B, Al, Ga, In, and Tl) theoretical studies and some interesting variations are found. With respect to experiment, incompatibilities exist.
Stable molybdenum (Mo), thallium (Tl), and uranium (U) isotope ratios were determined in a suite of samples from the 1959 Kilauea eruption and from Kilauea Iki lava lake with the aim of understanding the effects of igneous differentiation on these isotope systems. The samples range from olivine cumulate with MgO up to 27% to internal differentiates with MgO less than 3%, representing a tholeiitic differentiation series. Molybdenum, Tl, and U behave incompatibly during differentiation, and Mo and U isotope ratios do not systematically vary amongst the different samples. δ 98 Mo values range from -0.17 to -0.31‰ and δ 238 U values range from -0.20 to -0.38‰. Most individual analyses for both isotope systems overlap within measurement uncertainty (± ~0.7 and ~ 0.6, respectively). Mean δ 98 Mo and δ238U values are -0.22 ± 0.08‰ (2σ) and - 0.29 ± 0.09‰ (2σ), respectively, which overlap with Pacific mid ocean ridge basalt (MORB). In contrast, Tl isotopes show small but resolvable variations, with ε 205 Tl ranging from +1.20 to -1.38. The most negative ε 205 Tl values are confined to some of the lowest [Tl] samples, but the ε 205 Tl values do not otherwise vary smoothly with MgO or [Tl]. Possible mechanisms for thallium isotope fractionation are considered (e.g., degassing, water leaching, sulfide fractionation) but none are found to be satisfactory. Overall, the lack of resolvable variation in the Mo and U isotope systems and the small magnitude of heterogeneity in the Tl isotope system indicate that differentiation in tholeiitic systems is unlikely to be a major contributor to global variation in these isotope systems.
This report documents an effort to improve the energy resolution for a thallium doped cesium iodide (CsI:T1) scintillator paired with a spectrum matching photomultiplier tube (PMT). A comparison of the differences in the pulse height spectra from thallium doped (CsI:T1) and sodium doped (CsI:Na) single crystals with PMTs of different spectrum responses was performed. Results show that energy resolution of the detector only improves 0.5% at room temperature when these scintillators are coupled with a spectrum matching PMT. Based on a spectrum matching PMT, the best results for energy resolution are 7.39% and 7.88% for CsI:T1 and CsI:Na scintillators, respectively. The improvement is primarily attributed to the increase of photon statistics from the increase of photons (N) being detected in the spectrum matching PMT. Other factors, such as optical quantum yield and non-proportionality of the CsI:T1 and CsI:Na crystals, that can affect the energy resolution were also studied and reported. The results indicate that although the use of a spectrum matching PMT enhances the photon statistics, it also exacerbates the nonproportionality response. Consequently, a promised improvement on energy resolution due solely to photon statistics was not fully realized.