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DOE OSTI2024

Wehnelt photoemission in an ultrafast electron microscope: Stability and usability

We tested and compared the stability and usability of three different cathode materials and configurations in a thermionic-based ultrafast electron microscope: (1) on-axis thermionic and photoemission from a custom 100 μm diameter LaB 6 source with a graphite guard ring, (2) off-axis photoemission from the Ni aperture surface of the Wehnelt electrode, and (3) on-axis thermionic and photoemission from a custom 200 μm diameter polycrystalline Ta source. For each cathode type and configuration, including the Ni Wehnelt aperture, we illustrate how the photoelectron beam-current stability is deleteriously impacted by simultaneous cooling of the source following thermionic heating. Furthermore, we demonstrate usability via collection of parallel- and convergent-beam electron diffraction patterns and by formation of the optimum probe size. We find that usability of the off-axis Ni Wehnelt-aperture photoemission is at least comparable to on-axis LaB 6 thermionic emission, as well as to on-axis photoemission [the heretofore conventional approach to ultrafast electron microscopy (UEM) in thermionic-based instruments]. However, the stability and achievable beam currents for off-axis photoemission from the Wehnelt aperture were superior to that of the other cathode types and configurations, regardless of the electron-emission mechanism. Beam-current stability for this configuration was found to be ±1% (one standard deviation from the mean) for 70 min (longest duration tested), and steady-state beam current was reached within the sampling-time resolution used here (~1 s) for 15 pA beam currents (i.e., 460 electrons per packet for a 200 kHz repetition rate). Repeatability and robustness of the steady-state condition were also found to be within ±1% of the mean. We discuss the implications of these findings for UEM imaging and diffraction experiments, for pulsed-beam damage measurements, and for practical switching between optimum conventional TEM and UEM operation within the same instrument.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1992

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K

Noise and current-voltage characterization of complementary heterojunction field-effect transistor (CHFET) structures below 8 K are presented. It is shown that the CHFET exhibits normal transistor operation down to 6 K. Some of the details of the transistor operation, such as the gate-voltage dependence of the channel potential, are analyzed. The gate current is examined and is shown to be due to several mechanisms acting in parallel. These include field-emission and thermionic-field-emission, conduction through a temperature-activated resistance, and thermionic emission. The input referred noise for n-channel CHFETs is presented and discussed. The noise has the spectral dependence of 1/f noise, but does not exhibit the usual area dependence.

Cunningham, Thomas J.↗

NASA NTRS2018

Hollow Cathode Thermal Modelling and Self-Consistent Plasma Solution: Work Function Evaluation for a LaB6 Cathode.

Self-heating hollow cathodes are central components in modern electric thrusters. The plasma discharge inside these devices heats the internal components, thus maintaining the temperatures required for electron emission. Precise knowledge of the physical phenomena governing hollow cathode operation is key to predict their lifetime, speciﬁcally, their thermionic emission characteristics. A simulation platform has been built to couple plasma and thermal models of the self-heating hollow cathode to produce a self-consistent solution. A self-consistent solution has been found for a LaB6 hollow cathode operating at 25A and 13 sccm where the work function is assumed to be spatially uniform along the emitter with a value which is allowed to vary as the coupled model iterates to a self-consistent solution. The emitter temperature from the converged solution does not agree with experimental temperature measurements, however. The results of a sensitivity analysis suggest that none of the tolerances in the measurement are responsible for the discrepancy. We hypothesize that either the work function needs to be a function of position along the emitting surfaces or the heat ﬂuxes have been overestimated in the plasma solver.

Meiron, Daniel I.↗

NASA NTRS1964

Computation of electron diode characteristics by monte carlo method including effect of collisions.

Consistent field Monte Carlo method calculation for collision effect on electron-ion diode characteristics and for hard sphere electron- neutral collision effect for monoenergetic- thermionic emission

ELECTRON DIFFUSION↗

NASA NTRS1981

A phenomenological model describing orificed, hollow cathode operation

A phenomenological model is presented which describes the emission processes occurring within the orificed, hollow cathode. The model defines a region of ion production inside the cathode and assumes that the cathode emission current can be accounted for by considering the ion and electron currents which cross the boundary of this region. Most of the current (approximately 72%) comes from electrons produced by field-enhanced, thermionic emission from a well-defined emission surface at the downstream end of the insert which circumscribes the ion product region. The electrons produced at the emission surface feed the ionization process in the region of ion production; the rest of the current (approximately 28%) is carried by the ions produced in the process. Moving at the Bohm velocity, these ions leave the production volume; they then complete the current path by being collected at various cathode potential surfaces, including the emission surface. The model establishes the ratio of ion to electron currents at the emission surface on the basis of the energy balance at that surface. Experimental results corroborating the principal assumptions of the model are presented and discussed.

Siegfried, D. E.↗

NASA NTRS2014

Solid-State Thermionic Nuclear Power for Megawatt Propulsion, Planetary Surface and Commercial Power Project

Thermionic (TI) power conversion is a promising technology first investigated for power conversion in the 1960's, and of renewed interest due to modern advances in nanotechnology, MEMS, materials and manufacturing. Benefits include high conversion efficiency (20%), static operation with no moving parts and potential for high reliability, greatly reduced plant complexity, and the potential for reduced development costs. Thermionic emission, credited to Edison in 1880, forms the basis of vacuum tubes and much of 20th century electronics. Heat can be converted into electricity when electrons emitted from a hot surface are collected across a small gap. For example, two "small" (6 kWe) Thermionic Space Reactors were flown by the USSR in 1987-88 for ocean radar reconnaissance. Higher powered Nuclear-Thermionic power systems driving Electric Propulsion (Q-thruster, VASIMR, etc.) may offer the breakthrough necessary for human Mars missions of < 1 yr round trip. Power generation on Earth could benefit from simpler, moe economical nuclear plants, and "topping" of more fuel and emission efficient fossil-fuel plants.

George, Jeffrey↗

NASA NTRS1984

Evaluation of single crystal LaB6 cathodes for use in a high frequency backward wave oscillator tube

The results of thermionic emission and evaporation studies of single crystal LaB6 cathodes are given. A comparison between the (100), (210) and (310) crystal planes shows the (310) and (210) planes to possess a work function approx 0.2 eV lower than (100). This translates into a significant increase in current density, J, at a specified temperature. Comparison with a state-of-the-art impregnated dispenser cathode shows that LaB6 (310) is a superior cathode in nearly all respects except operating temperature at j 10 A/sq cm. The 1600 K thermionic and room temperature retarding potential work functions for LaB6 (310) are 2.42 and 2.50 respectively.

Swanson, L. W.↗

DOE OSTI2024

Reducing the Barrier Height in Organic Transistors

Abstract Reducing the Schottky barrier height and Fermi level de‐pinning in metal‐organic semiconductor contacts are crucial for enhancing the performance of organic transistors. The reduction of the Schottky barrier height in bottom‐contact top‐gate organic transistors is demonstrated by adding 1 nm thick atomic layer deposited Al 2 O 3 on the source and drain contacts. By using two different donor‐acceptor copolymers, both p‐ and n‐ type transistors are investigated. Temperature‐dependent current–voltage measurements from non‐treated, self‐assembled monolayer treated, and Al 2 O 3 treated Au source‐drain contact field‐effect transistors with varying channel lengths are carried out. The drain current versus drain voltage near zero gate voltage, which may be described by the thermionic emission model at temperatures above 150 K, allows the estimation of the Schottky barrier height ( φ B ). The Al 2 O 3 contact‐treated transistors show more than 40% lower φ B compared with the non‐treated contacts in the p ‐type transistor. Similarly, an isoindigo‐based transistor, with n ‐type transport, shows a reduction in φ B with Al 2 O 3 treated contacts suggesting that such ultrathin oxide layers provide a universal method for reducing the barrier height.

Ghobadi, Arash↗

DOE OSTI2025

Influence of Photoemission Geometry on Timing and Efficiency in 4D Ultrafast Electron Microscopy

Broader adoption of 4D ultrafast electron microscopy (UEM) for the study of chemical, materials, and quantum systems is being driven by development of new instruments as well as continuous improvement and characterization of existing technologies. Perhaps owing to the still-high barrier to entry, the full range of capabilities of laser-driven 4D UEM instruments has yet to be established, particularly when operated at extremely low beam currents (~fA). Accordingly, with an eye on beam stability, we have conducted particle tracing simulations of unconventional off-axis photoemission geometries in a UEM equipped with a thermionic-emission gun. Specifically, we have explored the impact of experimentally adjustable parameters on the time-of-flight (TOF), the collection efficiency (CE), and the temporal width of ultrashort photoelectron packets. The adjustable parameters include the Wehnelt aperture diameter (DW), the cathode set-back position (Ztip), and the position of the femtosecond laser on the Wehnelt aperture surface relative to the optic axis (Rphoto). Notable findings include significant sensitivity of TOF to DW and Ztip, as well as non-intuitive responses of CE and temporal width to varying Rphoto. As a means to improve accessibility, practical implications and recommendations are emphasized wherever possible.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Next-generation tunnel FETs: exploring material perspectives and areal tunneling configurations

The end of Dennard scaling, which facilitated proportional increases in computing power without added energy costs until the mid-2000s, has underscored the urgent need for innovative semiconductor devices that can enhance energy efficiency. Tunnel field-effect transistors (TFETs) have emerged as promising candidates to surpass the energy efficiency of conventional metal oxide semiconductor field-effect transistors (MOSFETs). Unlike MOSFETs, which rely on thermionic emission to overcome the source-channel potential barrier, TFETs operate through quantum tunneling, potentially enabling sub-60 mV dec −1 subthreshold swing (SS) for low-voltage operation. However, lateral TFETs have faced challenges in achieving adequate on-state current (I ON ) and a broad SS operation window, limiting their practical utility. This review article advocates for areal TFETs, which utilize face-to-face tunnel junctions that ideally offer step-function current turn-on characteristics and allow I ON to scale with device area rather than width. We highlight recent advancements in integrating 2D materials into tunneling structures, which could facilitate efficient band-to-band tunneling through atomically thin layers, while addressing challenges of gate field screening. We then discuss the nearer-term prospects of epitaxial areal TFETs comprising III–V compound semiconductors and group-IV semiconductors based on recent experimental progress. The review examines both quantum mechanical and semiclassical modeling approaches for TFETs, including techniques to reduce the computational complexity. The article delves into ongoing challenges in material synthesis, interface engineering, device fabrication, and integration pathways, concluding with recommendations for future research directions to overcome the fundamental power density limitations of conventional transistor technology.

2D materials↗

DOE OSTI2025

Low leakage current in heteroepitaxial Al 0.7 Sc 0.3 N ferroelectric films on Ga N

Wurtzite ( Al , Sc ) N ferroelectrics are attractive for microelectronics applications due to their chemical and structural compatibility with wurtzite semiconductors, such as Ga N and ( Al , Ga ) N . However, the leakage current in epitaxial stacks reported to date should be reduced for reliable device operation. Here, we demonstrate low leakage current in epitaxial Al 0.7 Sc 0.3 N films on Ga N with well-saturated ferroelectric hysteresis loops that are orders of magnitude lower (i.e., 0.07 A cm − 2 ) than previously reported films (1–19 A cm − 2 ) having similar or better structural characteristics. We also show that, for these high-quality epitaxial ( Al , Sc ) N films, structural quality (edge and screw dislocations), as measured by diffraction techniques, is not the dominant contributor to leakage. Instead, the small leakage in our films is limited by thermionic emission across the interfaces, which is distinct from the large leakage due to trap-mediated bulk transport in the previously reported ( Al , Sc ) N films. To support this conclusion, we show that Al 0.7 Sc 0.3 N on lattice-matched In 0.18 Ga 0.82 N buffers with improved structural characteristics but higher interface roughness exhibit increased leakage characteristics. This demonstration of low leakage current in heteroepitaxial ( Al , Sc ) N films and understanding of the importance of interface barrier and surface roughness can guide further efforts toward improving the reliability of wurtzite ferroelectric devices. Published by the American Physical Society 2025

36 MATERIALS SCIENCE↗

DOE OSTI2024

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Abstract This letter reports the demonstration of lateral AlN Schottky barrier diodes (SBDs) on single-crystal AlN substrates by metalorganic CVD (MOCVD) with an ultra-low ideality factor ( η ) of 1.65, a high Schottky barrier height of 1.94 eV, a breakdown voltage ( BV ) of 640 V, and a record high normalized BV by the anode-to-cathode distance. The device current was dominated by thermionic emission, while most previously reported AlN SBDs suffered from defect-induced current with higher η (>4). This work represents a significant step towards high-performance ultra-wide bandgap AlN-based high-voltage and high-power devices.

Physics↗

NASA NTRS1972

The III-V photocathode - A major detector development.

Description of new (III-V) photocathodes which show improvements in sensitivity of as much as ten to a hundred times over conventional cathodes in the near infrared and useful improvements at shorter wavelengths. The development stems from a combination of basic knowledge of the photoemission process, gained in the 1950s, and the advancing understanding of the technology of III-V materials, in the 1960s. The superior performance of these cathodes is due to the fact that the vacuum level at the surface lies below the bottom of the conduction band in the bulk of the material. Consequently, the threshold of response is set by the III-V bandgap. The bandgap (and the threshold of response) can be varied by alloying different III-V materials together. A reduction in thermionic emission is realized with these cathodes. At present no semitransparent III-V cathodes with comparably interesting performance are available. The problems hindering further improvements, as well as the problems of placing these cathodes in practical multipliers and image tubes, are discussed briefly.

Spicer, W. E.↗

NASA NTRS1973

Hollow cathodes with BaO impregnated, porous tungsten inserts and tips

The technology of impregnated materials is described and some inherently advantageous characteristics of impregnated cathodes are discussed. Thermionic emission measurements are presented for oxide coated and impregnated cathodes. Five cathode configurations with barium oxide impregnated porous tungsten inserts and/or tips have been fabricated and tested. Reliability, durability, and stability of operation are characterized. One of the cathodes has accumulated over 9000 operational hours, another has been cycled on and off more than 800 times.

Hudson, W. R.↗

NASA NTRS1973

CdS-metal contact at higher current densities.

An investigation is conducted concerning the mechanisms by which a steady flow of current proceeds through the contact when an external voltage is applied. The main characteristics of current mechanisms are examined, giving attention to photoemission from the cathode, thermionic emission, minority-carrier extraction, and the tunneling of electrons. A high-field domain analysis is conducted together with experimental studies. Particular attention is given to the range in which tunneling predominates.

Stirn, R. J.↗

NASA NTRS1973

Hollow cathodes with BaO impregnated, porous tungsten inserts and tips

Hudson, W. R.↗

NASA NTRS1974

Isotopic composition of lithium, potassium, rubidium, and strontium in lunar surface material

The isotopic composition of alkali and alkaline earth elements in the Luna 16 regolith was investigated by the method of thermionic emission, without chemical separation. The isotopic composition of the lithium in two regolith samples did not differ (within the limits 0.5 percent) from the mean of the terrestrial reference standard. At the same time, the observed difference (1 percent) in the isotopic composition of lithium between the samples requires further investigation and confirmation. The isotopic compositions of K and Rb did not differ within the limits of experimental error from the isotopic composition of the reference standard.

Zaslavskiy, V. G.↗

NASA NTRS1980

Eutectic alloys. Citations from the International Aerospace Abstracts data base

These 250 abstracts from the international literature provide summaries of the preparation, treatments, composition and structure, and properties of eutectic alloys. Techniques for directional solidification and treatments including glazing, coating, and fiber reinforcement are discussed. In addition to the mechanical and thermal properties, the superconducting, corrosion, resistance, and thermionic emission and adsorption properties are described.

Moore, P.↗