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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Indium Tin-Doped Oxide Interactions with Solvent Radiolysis Products

Transparent conductive oxides (TCOs), such as indium tin-doped oxide (ITO), are ubiquitous as components of electronics and are ideal electrode substrates for catalysis, energy transformation reactions, and energy storage applications. Recently, researchers have recognized their effectiveness as electrode materials for manipulating actinide oxidation states in solution. Despite their popularity as electrode materials, prior studies focused extensively on the direct radiolysis of TCO materials in air and rarely examined these effects within a solution, limiting our fundamental understanding of the interactions between solvent radiolysis products and these substrates in high radiation environments. Here, in this study, we characterize the effects of solvent radiolysis products—arising from the gamma irradiation of water, aqueous nitric acid solutions, and n-dodecane—on the composition, surface speciation, and band structure of ITO thin films on a glass substrate as a function of absorbed dose using UV-visible spectroscopy, scanning electron microscopy, photoelectrochemistry, and X-ray photoelectron spectroscopy. Our work demonstrates that mesoporous thin film electrodes of ITO exposed to gamma radiation in each solvent accumulate defects and exhibit solvent and dose dependent changes to their surface and interfacial properties. These electrodes maintain their electrochemical function and improve their photoelectrochemical performance up to at least 100 kGy of accumulated gamma dose, confirming their utility in solvents exposed to ionizing radiation fields.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Barrier reinforcement for enhanced perovskite solar cell stability under reverse bias

Stability of perovskite solar cells (PSCs) under light, heat, humidity and their combinations have been notably improved recently. However, PSCs have poor reverse-bias stability that limits their real-world application. Here we report a systematic study on the degradation mechanisms of p-i-n structure PSCs under reverse bias. The oxidation of iodide by injected holes at the cathode side initialize the reverse-bias-induced degradation, then the generated neutral iodine oxidizes metal electrode such as copper, followed by drift of Cu+ into perovskites and its reduction by injected electrons, resulting in localized metallic filaments and thus device breakdown. A reinforced barrier with combined lithium fluoride, tin oxide and indium tin oxide at the cathode side reduces device dark current and avoids the corrosion of Cu0. It dramatically increases breakdown voltage to above -20 V and improved the T90 lifetime of PSCs to ~1,000 h under -1.6 V. The modified minimodule also maintained over 90% of its initial performance after 720 h of shadow tests.

degradation mechanisms↗
DOE OSTI2025

Fabrication of nanoporous doped metal oxide coatings via selective infiltration of a block copolymer template: The case of Al-doped zinc oxide

Conductive nanoporous conformal coatings are important for various applications including touchscreens, displays, and electrochromic windows, though design of such coating with controlled porosity and composition remains challenging. We propose a sequential infiltration synthesis (SIS) method for the fabrication of nanoporous conductive aluminum-doped zinc oxide (AZO) films by infiltrating block copolymer (BCP) templates, specifically polystyrene-block-polyvinyl pyridine (PS-b-P4VP), with diethyl zinc and trimethyl aluminum precursors. Tunability of both porosity and electrical conductivity is achieved by precisely controlling the swelling behavior of the polymer templates and adjusting the number of SIS cycles. Further, our results reveal that porosity levels can reach up to 80 %, with resistivity as low as ~7.83 Ωcm. Using conductive atomic force microscopy (C-AFM) and Hall effect measurements, we show that lower concentrations of aluminum doping relative to zinc (around 1: 17) results in higher conductivity of the AZO films. Additionally, AZO is based on zinc oxide (ZnO) which is cost-efficient, abundant and less toxic than commonly used transparent conductive oxides such as indium tin oxide (ITO) and fluorine-doped tin oxide (FTO). Therefore, this novel approach opens new possibilities for creating highly porous, conformal, conductive AZO coatings with customizable porosity and composition, making them ideal candidates for diverse optoelectronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ordered porous RGO/SnO 2 thin films for ultrasensitive humidity detection

In this work, ordered porous thin films of reduced graphene oxide and tin oxide (rGO/SnO 2 ) were synthesized by a polystyrene sphere monolayer colloidal crystal template method, and their gas-sensing properties were systematically studied. The formed amorphous SnO 2 and partially reduced graphene oxide were analyzed using several complementary material characterization techniques. Further, the results show that the incorporation of rGO significantly improved the humidity sensitivity and the electrical conductivity of the sensor relative to the pristine SnO 2 thin film. Fast response time and excellent selectivity towards humidity were also achieved for the rGO/SnO 2 composite film. The long-term stability of the rGO/SnO 2 sensor was confirmed by comparing its performance to a commercial humidity sensor. The enhanced sensor performance is attributed to the synergistic effects of the incorporation of rGO and the ordered porous structure of the composite film.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗
DOE OSTI2025

Electrochemical Behavior of Cerium at an Indium Tin-Doped Oxide Electrode in Acidic Media

The redox behavior and speciation of cerium at mesoporous thin films composed of nanoparticles of indium tin-doped oxide (nITO) electrodes were characterized in pH 4.8, 0.1 M acetate buffer and both 0.1 and 1 M HNO 3 using electrochemical techniques and X-ray photoelectron spectroscopy. Anodic deposition of ceria species from Ce(III) to the nITO electrode was achieved under all solvent conditions via spontaneous condensation of electrochemically generated ceric hydroxide species. In 1 M nitric acid, the rate of CeO 2 dissolution is on the same order as CeO 2 deposition, resulting in negligible amounts of CeO 2 electrodeposited at the nITO surface. The cathodic stripping of CeO 2 from the nITO substrate deposited in 0.1 M nitric acid or pH 4.8 acetate buffer follows a 2-step process where Ce(IV)-oxide is initially reduced to an unstable Ce(III)-oxide species that rapidly undergoes acid catalyzed dissolution to yield soluble Ce(III) (aq) . These findings provide a foundation for the pH and anodic potential controlled deposition of CeO 2 thin films to ITO substrates, which can aid in the development of materials composed of ceria. As a result, they can also be used to infer likely analogous actinide redox behavior and speciation at these electrodes.

Cerium↗
DOE OSTI2023

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

(La and Ga)-doped tin monoxide [stannous oxide, tin (II) oxide, SnO] thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from ≈ 5 × 10 18 to 2 × 10 21 cm -3 . In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at 1.2 × 10 21 cm -3 Ga, while the incorporation of La showed a lower solubility limit. Transport measurements on the doped samples reveal that Ga acts as an acceptor and La as a compensating donor. While Ga doping led to an increase in the hole concentration from 1 × 10 18 -1 × 10 19 cm -3 for unintentionally doped (UID) SnO up to 5 × 10 19 cm -3 , La-concentrations well in excess of the UID acceptor concentration resulted in semi-insulating films without detectable n-type conductivity. Ab initio calculations qualitatively agree with our dopant assignment of Ga and La and further predict In Sn to act as an acceptor as well as Al Sn and B Sn as donors. These results show the possibilities of controlling the hole concentration in p-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-Performance Titanium Oxynitride Thin Films for Electrocatalytic Water Oxidation

TiN x O y (TiNO) thin films with superior electrochemical properties have been synthesized in situ using a pulsed laser deposition method and a varied oxygen partial pressure from 5 to 25 mTorr. In this study, the electrochemical overpotential of these TiNO films for water oxidation was found to be as low as 290 mV at 10 mA/cm 2 , which is among the lowest overpotential values reported. The Tafel slopes, indicative of a rate of increase of electrode potential with respect to current, for these films are determined to be in the range of 85–57 mV/decade. These results further demonstrate the superiority of TiNO thin film as electrocatalyst for water oxidation to generate fossil-free fuels. The improvement in the electrocatalytic behavior of the semiconducting TiNO thin films is explained based on an adjustment in the valence band maximum edge and an enhancement in the number of electrochemically active sites. Both effects are realized by the substitution of N by O, forming a TiNO lattice that is isostructural with the rock-salt TiN lattice. These findings appear to assume significant importance in light of water electrolysis to produce fuels for the development of environmentally friendly power sources.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Life cycle energy demand and carbon emissions of scalable single-junction and tandem perovskite PV

Perovskite photovoltaics reached record efficiencies in the laboratory and, if sustainably commercialized, they would accelerate a green energy transition. Here, this article presents the development of life-cycle inventory material and energy databases of most promising four single-junction and three tandem scalable perovskite systems with assumptions regarding scalable production validated by industry experts. We conducted comprehensive “ex ante” Life Cycle Analysis (LCA) and Net Energy Analysis, analyzing their cumulative energy demand, global warming potential profiles, energy payback times and energy return on investment (EROI). LCA contribution analysis elucidates the most impactful material and process choices. It shows that solution-based perovskite manufacturing would have lower environmental impact than vapor-based methods, and that roll-to-roll (RtR) printing offers the lowest impact. Among material choices, MoOx/Al has lower impact than Ag, and fluorine-tin-oxide lower than indium-tin-oxide. Furthermore, we compare perovskites with commercial crystalline-silicon and thin-film PV, accounting for the most recent developments in crystalline-Si wafer production and differences in life expectancies and efficiencies. It is shown that perovskite systems produced with RtR manufacturing could reach in only 12 years of life the same EROI as that of single-crystalline-Si PV lasting 30-years. This work lays a foundation for sustainability investigations of perovskite large-scale deployment.

14 SOLAR ENERGY↗
DOE OSTI2022

Free Energy Dependencies for Interfacial Electron Transfer from Tin-Doped Indium Oxide (ITO) to Molecular Photoredox Catalysts

John B. Goodenough proposed that interfacial electron transfer kinetics from main group metal oxides should be fundamentally different from that of transition metal oxides, an expectation that has not been widely tested. Herein, the kinetics for interfacial electron transfer from mesoporous transparent conductive oxide Tin-doped Indium Oxide (ITO) to four photoredox catalysts (PCs) were characterized in acetonitrile electrolytes. The photocatalysts had the form: [Ru(4,4ʹ-R 2 -2,2′-bipyridine) 2 (4,4ʹ-(PO 3 H 2 ) 2 -2,2′-bipyridine)] 2+ , where R was H, methoxy, tert -butyl, and Br. The impact of the surface binding group was characterized with [Ru(2,2′-bipyridine) 2 (4,4ʹ-(CO 2 H) 2 -bpy)] 2+ . The interfacial electron transfer reaction ITO(e − )∣PC + → ITO∣PC was quantified by nanosecond absorption spectroscopy as a function of the applied potential (and hence ‒Δ G °). Specific conditions of applied potential were identified where the kinetics were sensitive to the incident irradiance. A layer-by-layer method was used to insert ionic methylene bridge(s) between the PC and the oxide surface. Marcus-Gerischer analysis of the kinetic data indicates non-adiabatic interfacial electron transfer with total reorganization energies that increase when bridges were placed between the photocatalyst and the ITO surface.

Bangle, Rachel E.↗
DOE OSTI2026

Nanoscale Amorphization of Poly(Triarylamine) for Efficient and Stable Inverted Perovskite Photovoltaics

Perovskite solar modules require hole-selective layers that combine efficient charge extraction, interfacial uniformity and scalable processing. Poly(triarylamine) (PTAA) is widely used in high-performance inverted perovskite photovoltaics, but its nanoscale crystallization and aggregation on indium tin oxide can disrupt film continuity, increase interfacial recombination and limit module stability. Here we show that 4-fluorobenzylphosphonic acid (4FBPA) modifies the surface of indium tin oxide to induce nanoscale amorphization of PTAA, forming a uniform sub-10-nm hole-selective layer. The molecule binds to indium tin oxide through a dehydration reaction, tunes the work function and surface free energy of the photoanode, and improves energy-level alignment with PTAA. The resulting amorphous PTAA film shows enhanced conductivity and hole extraction, suppresses non-radiative recombination at the buried interface and promotes more uniform perovskite growth. Inverted perovskite solar cells reach a power conversion efficiency of 26.63%, while blade-coated modules achieve a certified quasi-steady-state efficiency of 23.01%. The modules retain 95.9% of their initial efficiency after 2,600 hours of maximum-power-point operation under 1-sun illumination at 65 +- 5 degrees C in nitrogen. These results identify nanoscale amorphization of polymeric hole-selective layers as a route to efficient and stable inverted perovskite photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2021

Surface characterization and methane activation on SnO x /Cu 2 O/Cu(111) inverse oxide/metal catalysts

To activate methane at low or medium temperatures is a difficult task and a pre-requisite for the conversion of this light alkane into high value chemicals. In this work, we report the preparation and characterizations of novel SnO x /Cu 2 O/Cu(111) interfaces that enable low-temperature methane activation. Scanning tunneling microscopy identified small, well-dispersed SnO x nanoclusters on the Cu 2 O/Cu(111) substrate with an average size of 8 Å, and such morphology was sustained up to 450 K in UHV annealing. Ambient pressure X-ray photoelectron spectroscopy showed that hydrocarbon species (CH x groups), the product of methane activation, were formed on SnO x /Cu 2 O/Cu(111) at a temperature as low as 300 K. An essential role of the SnO x –Cu 2 O interface was evinced by the SnO x coverage dependence. Systems with a small amount of tin oxide, 0.1–0.2 ML coverage, produced the highest concentration of adsorbed CH x groups. Calculations based on density functional theory showed a drastic reduction in the activation barrier for C–H bond cleavage when going from Cu 2 O/Cu(111) to SnO x /Cu 2 O/Cu(111). On the supported SnO x , the dissociation of methane was highly exothermic (ΔE ~ –35 kcal mol –1 ) and the calculated barrier for activation (~20 kcal mol –1 ) could be overcome at 300–500 K, target temperatures for the conversion of methane to high value chemicals.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Chemical approaches to artificial photosynthesis: A molecular, dye-sensitized photoanode for O 2 production prepared by layer-by-layer self-assembly

We describe here the preparation of a family of photoanodes for water oxidation that incorporate an electron acceptor–chromophore–catalyst in single molecular assemblies on nano-indium tin oxide (nanoITO) electrodes on fluorine-doped tin oxide (FTO). The assemblies were prepared by using a layer-by-layer, Atomic Layer Deposition (ALD), self-assembly approach. In the procedure, addition of an electron acceptor viologen derivative followed by a Ru II (bpy) chromophore and a pyridyl derivative of the water oxidation catalyst [Ru(bda) (L) 2 ] (bda = 2,2'-bipyridine-6,6'-dicarboxylate) 2 , were linked by ALD by addition of the bridge precursors TiO 2 , ZrO 2 , and Al 2 O 3 as the bridging groups giving the assemblies, FTO|nanoITO|–MV 2+ –ALD MO 2 –RuP2 2+ –ALD M'O 2 –WOC. In a series of devices, the most efficient gave water oxidation with an incident photon to current efficiency of 2.2% at 440 nm. Transient nanosecond absorption measurements on the assemblies demonstrated that the slow step in the intra-assembly electron transfer is the electron transfer from the chromophore through the viologen bridge to the nanoITO electrode.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Interplay between Catalyst Corrosion and Homogeneous Reactive Oxygen Species in Electrochemical Ozone Production

In this study, electrochemical ozone production (EOP), a six-electron water oxidation reaction, offers promising avenues for creating value-added oxidants and disinfectants. However, progress in this field is slowed by a dearth of understanding of fundamental reaction mechanisms. In this work, we combine experimental electrochemistry, spectroscopic detection of reactive oxygen species (ROS), oxygen-anion chemical ionization mass spectrometry, and computational quantum chemistry calculations to determine a plausible reaction mechanism on nickel- and antimony-doped tin oxide (Ni/Sb–SnO 2 , NATO), one of the most selective EOP catalysts. Antimony doping is shown to increase the conductivity of the catalyst, leading to improved electrochemical performance. Spectroscopic analysis and electrochemical experiments combined with quantum chemistry predictions reveal that hydrogen peroxide (H 2 O 2 ) is a critical reaction intermediate. We propose that leached Ni 4+ cations catalyze hydrogen peroxide into solution phase hydroperoxyl radicals ( • OOH); these radicals are subsequently oxidized to ozone. Isotopic product analysis shows that ozone is generated catalytically from water and corrosively from the catalyst oxide lattice without regeneration of lattice oxygens. Further quantum chemistry calculations and thermodynamic analysis suggest that the electrochemical corrosion of tin oxide itself might generate hydrogen peroxide, which is then catalyzed to ozone. The proposed pathways explain both the roles of dopants in NATO and its lack of stability. Our study interrogates the possibility that instability and electrochemical activity are intrinsically linked through the formation of ROS. In doing so, we provide the first mechanism for EOP that is consistent with computational and experimental results and highlight the central challenge of instability as a target for future research efforts.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

A surface acoustic wave hydrogen sensor with tin doped indium oxide layers for intermediate temperatures

We report high temperature surface acoustic wave (SAW) gas sensors with conducting sensing layers require tuning of the sheet conductivity for optimal response. Conducting metal oxides are attractive sensing materials for their tunable electronic properties and high thermal stability, amongst others. Here, we have investigated the application of indium oxide (IO) and indium tin oxide (ITO) films on langasite (LGS)-based SAW reflective delay line sensor devices for monitoring hydrogen at 350 °C. Specifically, we modeled the effect of the IO and ITO sensing layer thickness on the wave velocity, attenuation, and effective electromechanical coefficient. This was followed by an experimental demonstration of tuning of the ITO film sheet conductivity by controlling the dopant concentration and yielding an improvement in the sensor sensitivity. The current study provides a pathway towards the development of conductivity-based sensing layers for high temperature SAW gas sensors with improved sensitivity.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Deterministic modeling of hybrid nonlinear effects in epsilon-near-zero thin films

In nonlinear optics, significant effort is concentrated on improving the strength and efficiency of interactions; however, experimentally investigating nonlinear materials is a complex, time-consuming, and costly investment. Moreover, it is often challenging to isolate, study, and optimize material parameters in an experiment due to complexities in the growth process. Recently, epsilon-near-zero materials have received a great deal of attention as promising nonlinear optical materials, but like many up-and-coming materials, the ability to explore and optimize their properties has been challenging. Here, we establish a framework to rapidly evaluate the performance of nonlinear epsilon-near-zero materials for both inter- and intraband effects in silico, requiring only an energy-momentum (E-k) diagram, linear optical properties, and experimental conditions. Measured nonlinear reflection and transmission in gallium-doped zinc oxide films are compared to the numerical framework for both intra- and interband excitation to verify accuracy across wavelength and irradiance while two figures of merit (FoMs) are introduced to quickly evaluate the performance of films without a full numerical framework. This capability is used to predict the performance of highly doped gallium nitride, cadmium oxide, zinc oxide, and indium tin oxide films, and efficient intra- and interband operation conditions are identified. Through this numerical framework and the FoMs, the exploration of unstudied epsilon-near-zero materials is enabled without the need for a nonlinear experiment, thereby accelerating the search for more efficient nonlinear materials and excitation conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Photonic near infrared heater

A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al2O3, AlN, MgO, SiO2, TiO2, Si3N4, MgF2, Ta2O5, SiC, Si, Ge, and Indium Tin Oxide (ITO).

Prasher, Ravi Shankar↗