Search NASA⌕ Search

SEARCH · Search NASA

Results for “Tin telluride”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

49 records · Page 3

Growth of PbSnTe single crystal by traveling-zone method in low gravity (M-2)

The single-crystal lead tin telluride (PbSnTe) semiconductor is most promising as a laser radiation element and infrared detecting element in the far infrared region. However, it is very difficult to grow a large single crystal with a homogeneous composition on Earth because the elements have a very strong tendency to separate from each other in the molten phase due to differences in their specific gravities and melting points. The purpose of the experiment is to grow a single crystal of PbSnTe by a traveling zone method in microgravity, and to study the spatial fluctuation of the composition and the electrical properties of the crystal.

Segawa, Y.↗

The Effect of Microgravity Direction on the Growth of PbSnTe

The Space Shuttle Columbia was launched as STS-75 at 2018 GMT (Greenwich Mean Time) on February 22, 1996. One of the two major experiment packages was the Third United States Microgravity Payload (USMP-3), and one of the principal instruments on the USMP was the Advanced Automated Directional Solidification Furnace (AADSF). The AADSF is a multizone directional solidification furnace, and at the time of the USMP-3 flight was capable of processing only one sample per Shuttle mission which, for that flight, was a lead tin telluride (PbSnTe) crystal growth experiment. In the one year since the flight experiment the sample has been retrieved from the spacecraft and analysis has begun. After presenting introductory material on why PbSnTe was chosen as a test material, why microgravity processing was expected to produce desired results, and what we expected to find in conducting these tests, this report discusses the results to date which are far from complete.

Fripp, A. L.↗

Growth of Compound Semiconductors in a Low Gravity Environment: Microgravity Growth of PbSnTe

The growth of the alloy compound semiconductor lead tin telluride (PbSnTe) was chosen for a microgravity flight experiment in the Advanced Automated Directional Solidification Furnace (AADSF), on the United States Microgravity Payload-3 (USNP-3) in February, 1996 and on USNW- 4 in November, 1997. The objective of these experiments was to determine the effect of the reduction in convection, during the growth process, brought about by the microgravity environment. The properties of devices made from PbSnTe, an alloy of PbTe and SnTe, are dependent on the ratio of the elemental components in the starting crystal. Compositional uniformity in the crystal is only obtained if there is no significant mixing in the liquid during growth. The technological importance of PbSnTe lies in its band gap versus composition diagram which has a zero energy crossing at approximately 40% SnTe. This facilitates the construction of long wavelength (greater than 6 gm) infrared detectors and lasers. The properties and utilization of PbSnTe are the subject of other papers. 1,2 PbSnTe is also interesting from a purely scientific point of view. It is, potentially, both solutally and thermally unstable due to the temperature and density gradients present during growth. Density gradients, through thermal expansion, are imposed in directional solidification because temperature gradients are required to extract heat. Solutal gradients occur in directional solidification of alloys due to segregation at the interface. Usually the gradients vary with both experiment design and inherent materials properties. In a simplified one dimensional analysis with the growth axis parallel to the gravity vector, only one of the two instabilities work at a time. During growth, the temperature in the liquid increases ahead of the interface. Therefore the density, due to thermal expansion, is decreasing in that direction. However, the phase diagram shows that the lighter SnTe is preferentially rejected at the interface. This causes the liquid density to increase with distance away from the interface.

Fripp, A. L.↗

Effect of Marangoni Convection Generated by Voids on Segregation During Low-G and 1-G Solidification

Solidification experiments, especially microgravity solidification experiments, are often compromised by the evolution of unwanted voids or bubbles in the melt. Although these voids and/or bubbles are highly undesirable, there is currently no effective means of preventing their formation or of eliminating their adverse effects, particularly during microgravity experiments. Marangoni convection caused by these voids can drastically change the transport processes in the melt. Recent microgravity experiments by Matthiesen (1) Andrews (2) and Fripp (3) are perfect examples of how voids and bubbles can affect the outcome of costly space experiments and significantly increase the level of difficulty in interpreting their results. Formation of bubbles have caused problems in microgravity experiments for a long time. Even in the early Skylab mission an unexpectedly large number of bubbles were detected in the four materials processing experiments reported by Papazian and Wilcox (4). They demonstrated that while during ground-based tests bubbles were seen to detach from the interface easily and float to the top of the melt, in low-gravity tests no detachment from the interface occurred and large voids were grown in the crystal. More recently, the lead-tin-telluride crystal growth experiment of Fripp et al.(3) flown aboard the USMP-3 mission has provided very interesting results. The purpose of the study was to investigate the effect of natural convection on the solidification process by growing the samples at different orientations with respect to the gravitational field. Large pores and voids were found in the three solid crystal samples processed in space. Post-growth characterization of the compositional profiles of the cells indicated considerable levels of mixing even in the sample grown in the hot-on-top stable configuration. The mixing was attributed to thermocapillary convection caused by the voids and bubbles which evolved during growth. Since the thermocapillary convection is orientation-independent, diffusion-controlled growth was not possible in any of the samples, even the top-heated one. These results are consistent with recent studies of thermocapillary convection generated by a bubble on a heated surface undertaken by Kassemi and Rashidnia (5-7) where it is numerically and experimentally shown that the thermocapillary flow generated by a bubble in a model fluid (silicone oil) can drastically modify the temperature field through vigorous mixing of the fluid around it, especially under microgravity conditions.

Kassemi, M.↗

Collaborative R&D with REEL Solar Inc (REEL) to Understand and Overcome Performance Limitations in CdTe Solar Cells: Cooperative Research and Development (Final Report)

This CRADA will focus on processing, advanced characterization, and testing of photovoltaic materials and devices to understand and improve REEL CdTe solar technology. This will include examining process variations and different buffer, absorber, and contact layers from REEL and NLR to maximize performance. The unique and diverse advanced characterization tools at NLR, such as time-resolved photoluminescence, capacitance-voltage measurements, electron beam scattered diffraction, cathodoluminescence, electron microscopy, TOF-SIMS, and other measurements will be applied to characterize REEL processing to improve understanding and guide experimental directions. Accelerated stability and potential induced degradation tests will be used to analyze metastability, short-and-long term degradation, and improve bankability. A second and major thrust this period will be joint development of Si/CdTe tandem solar cells to overcome industry wide terrestrial solar efficiency limits with the two lowest cost and manufacturable solar materials today. This will include developing novel transparent back contacts that can be incorporated into tandem structures and other novel solar applications, detailed analysis of designs and configurations for CdTe/Si tandem modules, and prototyping REEL CdTe Technology with Si bottom cells in tandem structures.

14 SOLAR ENERGY↗

Copper iodide nanoparticles as a hole transport layer to CdTe photovoltaics: 5.5 % efficient back-illuminated bifacial CdTe solar cells

We report the role of copper iodide (CuI) nanoparticles (NPs) as a hole transport layer (HTL) in cadmium sulfide/cadmium telluride (CdS/CdTe) photovoltaics. These CuI NPs were prepared using solution processing at room temperature and used to fabricate monofacial and bifacial CdTe solar cells with different back contacts. Using CuI/Au as the back contact, the device efficiency reached to 14.8% with outstanding fill factor (FF) of 79.2%. Replacing the gold (Au) electrode with sputtered transparent indium tin oxide (ITO), a CuI/ITO back contact yielded photoconversion efficiencies (PCEs) of 11.6% and 5.5% under front and back illumination respectively. Bifacial devices (CdTe/ITO) without the CuI NP HTL have an efficiency of 7.0% and 1.0% for front and back illumination, respectively. For CuI/ITO, a current collection of 12.0 mAcm -2 was observed upon back illumination which significantly improved over an ITO-only back contact (5.0 mAcm -2 ). The PCE obtained from back illumination was enhanced when using CuI NPs as the HTL due to the reduced back barrier height, and improved back interface as determined by temperature dependent current vs. voltage characteristics and impedance spectroscopy analysis. The improvement in device performance of the bifacial configuration is a significant step forward toward realizing thin film photovoltaic modules which harvest energy incident on the rear of the module.

36 MATERIALS SCIENCE↗

Building A New Kind of Graded-Z Shield for Swift's Burst Alert Telescope

The Burst Alert Telescope (BAT) on Swift has a graded-Z Shield that closes out the volume between the coded aperture mask and the Cadmium-Zinc-Telluride (CZT) detector array. The purpose of the 37 kilogram shield is to attenuate gamma rays that have not penetrated the coded aperture mask of the BAT instrument and are therefore a major source of noise on the detector array. Unlike previous shields made from plates and panels, this shield consists of multiple layers of thin metal foils (lead, tantalum, tin, and copper) that are stitched together much like standard multi-layer insulation blankets. The shield sections are fastened around BAT, forming a curtain around the instrument aperture. Strength tests were performed to validate and improve the design, and the shield will be vibration tested along with BAT in late 2002. Practical aspects such as the layup design, methods of manufacture, and testing of this new kind of graded-Z Shield are presented.

Robinson, David W.↗

Computed Tomography Support for Microgravity Materials Science Experiments

The accurate measurement of density in both liquid and solid samples is of considerable interest to Principal Investigators with materials science experiments slated for the ISS. The work to be described is an innovative application of a conventional industrial nondestructive evaluation instrument. Traditional applications of industrial computed tomography (CT) rely on reconstructing cross sections of large structures to provide two-dimensional planar views which can identify defects such as porosity, or other material anomalies. This has been done on microgravity materials science experiments to check the integrity of ampoule-cartridge assemblies for safety purposes. With a substantially monoenergetic flux, as can be obtained with a radioactive cobalt source, there will be a direct correlation between absorption and density. Under such conditions it then becomes possible to make accurate measurements of density throughout a sample, and even when the sample itself is enclosed within a furnace and a safety required cartridge. Such a system has been installed at Kennedy Space Center (KSC) and is available to PIs to examine samples before and after flight. The CT system is being used to provide density information for two purposes. Firstly, the determination of density changes from liquid to solid is vital information to the PI for purposes of modeling the solidification behavior of his sample, and to engineers who have to design containment ampoules and must allow for shrinkage and other volume changes that may occur during processing. While such information can be obtained by pycnometric measurements, the possibility of using a furnace installed on the CT system enables one to examine potentially dangerous materials having high vapor pressures, while not needing visible access to the material. In addition, uniform temperature can readily be obtained, and the system can be controlled to ramp up, hold, and ramp down while collecting data over a wide range of parameters automatically. Results of initial tests on low melting point elements such as gallium, indium and tin will be presented, and the intent is to proceed to compounds such as InSb, HgCdTe and CdTe. Alloys such as Pb-Sb (PI - Poirier, U AZ) and Cu-Al (PI - Trivedi, Ames Lab.), which are the subjects of flight experiments, will also be examined. The second application is the conversion of measured density values directly to composition. This was successfully done with the mercury cadmium telluride alloys grown on the second and fourth United States Microgravity Payload (USMP-2 and USMP-4) missions by Lehoczky. CdTe values along the length of the boules were obtained at KSC prior to cutting the sample, and could have been obtained prior to its removal from the cartridge and ampoule. Examples of the data obtained will be shown. It is anticipated that several of the materials science PIs will avail themselves of the technique described, initially for determining densities prior to flight, and then to acquire early quantitative data on the compositional variation within their samples.

Gillies, Donald C.↗

Semi-transparent p-type barium copper sulfide as a back contact interface layer for cadmium telluride solar cells

Optically transparent p-type materials play a critical role in transparent electronics including photovoltaic (PV) devices. P-type sulfide materials offer an alternative to oxides for PV application due to improved hole transport properties. Here, we report the solution-based synthesis of earth-abundant p-type transparent conducting barium copper sulfide (α-BaCu 4 S 3 , BCS) thin films. These films were characterized using scanning electron microscopy, X-ray diffraction, UV–Vis–NIR spectrophotometry, Raman spectroscopy, and spectroscopic ellipsometry. BCS films of ~100 nm thickness transmit >70% of visible light. We report on tests of the hole transport properties of these BCS films for cadmium telluride (CdTe) photovoltaics, finding that the BCS deposition process forms a beneficial tellurium (Te) rich surface on CdTe by selectively removing Cd from the surface. Based on our study, the BCS interface layer plays dual functions for CdTe PV devices as a hole transport material and as an etchant, enhancing the resulting device performance. We observed a significant increase in open-circuit voltage of CdTe solar cells with the BCS buffer layer. Furthermore, we discuss semitransparent CdTe solar cells with BCS as a hole transport layer and indium tin oxide as a finishing electrode. Semitransparent CdTe solar cells shows 13.3% conversion efficiency for the front side illumination and 1.2% efficiency for back side illumination, indicating high recombination of charge carriers generated close to the rear CdTe/BCS/ITO contact.

36 MATERIALS SCIENCE↗

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗