Purification and Improved Nuclear Radiation Detection of Tl 6 SI 4 Semiconductor
The wide-band-gap semiconductor Tl 6 SI 4 (2.14 eV) has high photon stopping power and is a promising material for detecting X-rays. To improve its photoresponse to low-flux γ-rays, material purification prior to crystal growth is crucial. In this contribution, we report effective purification protocols, impurity analysis, followed by synthesis and crystal growth, charge transport, and detector performance of large-sized Tl 6 SI 4 crystals. Purification methods of evaporation and zone refining were developed, and their high effectiveness was confirmed by impurity analysis via glow discharge mass spectrometry. Centimeter-sized single crystals were grown using the Bridgman method. The improved properties after material purification were confirmed by photoluminescence measurements. The energy of the valence band maximum of a Tl 6 SI 4 , measured with photoemission spectroscopy in air (PESA), is ~5.34 ± 0.05 eV. Detector devices fabricated from the single crystal exhibit a high resistivity of 5 × 10 12 Ω·cm. The detector shows potential photoresponse under 22.4 keV Ag Kα X-rays and 122 keV γ-rays from 57 Co. Spectroscopic energy resolution was achieved for 5.5 MeV α-particles from a 241 Am radiation source with a full width at half-maximum of 27% at an electric field intensity of 2500 V·cm -1 . On the foundation of its spectral response to 57 Co γ-rays, the electron mobility-lifetime product μeτe was estimated as 1.4 × 10 -5 cm 2 ·V -1 . Drift mobility measurements via a time-of-flight technique using spectral photoresponse induced by α-particles reveal a high electron mobility of 35 ± 7 cm 2 ·V -1 ·s -1 .