Vapor-phase growth of epitaxial GaAs sub 1-x Sb sub x alloys using arsine and stibine.
Vapor phase growth of epitaxial single crystalline GaAs-GaSb alloys using arsine and stibine
Clough, R. B.↗
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Vapor phase growth system and its use in the preparation of several III-V compound semiconductors
Vapor phase growth and properties of semiconductor materials
Enstrom, R. E.↗
Acceptance Testing of the Vapor Phase Catalytic Ammonia Removal Engineering Development Unit
This paper describes the results of acceptance testing of the Vapor Phase Catalytic Ammonia Removal (VPCAR) technology. The VPCAR technology is currently being developed by NASA as a Mars transit vehicle water recycling system. NASA has recently completed a grant to develop a next generation VPCAR system. This grant was peer reviewed and funded through the Advanced Life Support (ALS) National Research Announcement (NRA). The grant funded a contract with Water Reuse Technology Inc. to construct an engineering development unit. This contract concluded with the shipment of the final deliverable to NASA on 8/31/03. The objective of the acceptance testing was to characterize the performance of this new system. This paper presents the results of mass power, and volume measurements for the delivered system. In addition, product water purity analysis for a Mars transit mission and a planetary base wastewater ersatz are provided. Acoustic noise levels, interface specifications and system reliability results are also discussed. An assessment of the readiness of the technology for human testing and recommendations for future improvements are provided.
Flynn, Michael↗
Performance Testing of the Vapor Phase Catalytic Ammonia Removal Engineering Development Unit
This paper describes the results of performance testing of the Vapor Phase Catalytic Ammonia Removal (VPCAR) technology. The VPCAR technology is currently being developed by NASA as a Mars transit vehicle water recycling system. NASA has recently completed-a grant-to develop a next generation VPCAR system. This grant concluded with the shipment of the final deliverable to NASA on 8/31/03. This paper presents the results of mass, power, volume, and acoustic measurements for the delivered system. Product water purity analysis for a Mars transit mission and a simulated planetary base wastewater ersatz are also provided.
Flynn, Michael↗
Vapor-phase growth of several III-V compound semiconductors
Crystal growth of III-V compound semiconductors from vapor phase, studying deposition processes chemistry by mass spectrometry
Ban, V. S.↗
Growth studies of erbium-doped GaAs deposited by metalorganic vapor phase epitaxy using noval cyclopentadienyl-based erbium sources
Erbium-doped GaAS layers were grown by metalorganic vapor phase epitaxy using two new sources, bis(i-propylcyclopentadienyl)cyclopentadienyl erbium and tris(t-butylcyclopentadienyl) erbium. Controlled Er doping in the range of 10(exp 17) - 10(exp 18)/cu cm was achieved using a relatively low source temperature of 90 C. The doping exhibits a second-order dependence on inlet source partial pressure, similar to behavior obtained with cyclopentadienyl Mg dopant sources. Equivalent amounts of oxygen and Er are present in 'as-grown' films indicating that the majority of Er dopants probably exist as Er-O complexes in the material. Er(+3) luminescence at 1.54 micrometers was measured from the as-grown films, but ion implantation of additional oxygen decreases the emission intensity. Electrical compensation of n-type GaAs layers codoped with Er and Si is directly correlated to the Er concentration is proposed to arise from the deep centers associated with Er which are responsible for a broad emission band near 0.90 micrometers present in the photoluminescence spectra of GaAs:Si, Er films.
Redwing, J. M.↗
Numerical Modeling of Liquid-Vapor Phase Change
We implemented a two- and three-dimensional finite difference/front tracking technique to solve liquid-vapor phase change problems. The mathematical and the numerical features of the method were explained in great detail in our previous reports, Briefly, we used a single formula representation which incorporated jump conditions into the governing equations. The interfacial terms were distributed as singular terms using delta functions so that the governing equations would be the same as conventional conservation equations away from the interface and in the vicinity of the interface they would provide correct jump conditions. We used a fixed staggered grid to discretize these equations and an unstructured grid to explicitly track the front. While in two dimensions the front was simply a connection of small line segments, in three dimensions it was represented by a connection of small triangular elements. The equations were written in conservative forms and during the course of computations we used regriding to control the size of the elements of the unstructured grid. Moreover, we implemented a coalescence in two dimensions which allowed the merging of different fronts or two segments of the same front when they were sufficiently close. We used our code to study thermocapillary migration of bubbles, burst of bubbles at a free surface, buoyancy-driven interactions of bubbles, evaporation of drops, rapid evaporation of an interface, planar solidification of an undercooled melt, dendritic solidification, and a host of other problems cited in the reference.
Esmaeeli, Asghar↗
An Assessment of the Technical Readiness of the Vapor Phase Catalytic Ammonia Removal Process (VPCAR) Technology
This poster provides an assessment of the technical readiness of the Vapor Phase Catalytic Ammonia Removal Process (VPCAR). The VPCAR technology is a fully regenerative water recycling technology designed specifically for applications such as a near term Mars exploration mission. The VPCAR technology is a highly integrated distillation/catalytic oxidation based water processor. It is designed to accept a combined wastewater stream (urine, condensate, and hygiene) and produces potable water in a single process step which requires -no regularly scheduled re-supply or maintenance for a 3 year mission. The technology is designed to be modular and to fit into a volume comparable to a single International Space Station Rack (when sized for a crew of 6). This poster provides a description of the VPCAR technology and a summary of the current performance of the technology. Also provided are the results of two separate NASA sponsored system trade studies which investigated the potential payback of further development of the VPCAR technology.
Flynn, Michael↗
Development of Vapor-Phase Catalytic Ammonia Removal System
A report describes recent accomplishments of a continuing effort to develop the vapor-phase catalytic ammonia removal (VPCAR) process for recycling wastewater for consumption by humans aboard a spacecraft in transit to Mars.
Flynn, Michael↗
A method for generating quantitative vapor-phase infrared spectra of solids: results for phenol, camphor, menthol, syringol, dicyclopentadiene and naphthalene
Here, a method is presented to generate quantitative vapor-phase infrared spectra from substances that naturally occur as solids with moderate volatility. The solid is gravimetrically dissolved into a solvent that has few infrared spectral features, typically CS 2 and CCl 4 separately. The solution is flowed at a constant rate from a linearly pumped syringe into a metered stream of nitrogen carrier gas regulated by a mass flow controller. The analyte/solvent mix is flash vaporized by volatilizing the solution across a heated stainless-steel surface as it emanates from the syringe tip. The N 2 gas-solution mixture is flowed into a long-path White cell thermostatted at a desired temperature, the long optical path compensating for the modest analyte mixing ratio. A composite spectrum is generated from typically ten or more 760-Torr pressure-broadened spectra over the 600 to 6500 cm -1 spectral range at 0.1 cm -1 spectral resolution. The solid analytes reported here using this novel technique include dicyclopentadiene, menthol, syringol, phenol, camphor, and naphthalene.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Use of column V alkyls in organometallic vapor phase epitaxy (OMVPE)
The use of the column V-trialkyls trimethylarsenic (TMAs) and trimethylantimony (TMSb) for the organometallic vapor phase epitaxy (OM-VPE) of III-V compound semiconductors is reviewed. A general discussion of the interaction chemistry of common Group III and Group V reactants is presented. The practical application of TMSb and TMAs for OM-VPE is demonstrated using the growth of GaSb, GaAs(1-y)Sb(y), Al(x)Ga(1-x)Sb, and Ga(1-x)In(x)As as examples.
Ludowise, M. J.↗
Vapor phase growth of group 3, 4, and 5 compounds by HCl transport of elements
Technique has been devised for vapor-phase epitaxial growth of group 3, 4, and 5 binary, ternary, or quaternary compounds by HCl transport of the constituent elements or dopants. Technique uses all the constituents of the alloy system in their elemental form. Transport of these elements by an HCl + H2 carrier gas facilitates their transport as subchlorides.
Tyagi, R. C.↗
Experimental studies of the vapor phase nucleation of refractory compounds. III - The condensation of silver
Measurements are reported of the critical supersaturation necessary to initiate the vapor phase nucleation of silver over the ambient temperature range 500-950 K at total pressures of 250 and 500 torr of hydrogen. The results are compared with the predictions of both classical nucleation theory and the theory of a physical spinodal developed by Rasmussen (1982), neither of which adequately describes the present observations. The nucleation of silver appears to be dependent on the total pressure of the system in a manner which suggests that three-body reactions are necessary in order to form the initial silver cluster (e.g., dimers) from the monoatomic vapor.
Nuth, J. A.↗
Vapor Phase Installation of CpCo(CO) 2 in MOF‐808
Metal-organic frameworks (MOFs), including MOF-808 present an opportunity for vapor phase installation of reactive centers that may serve as uniform sites for precision catalysis. The mechanism of cobalt installation in MOF-808 through atomic layer deposition (ALD) upon CpCo(CO )2 exposure is investigated through in situ FTIR spectroscopy complemented by density functional theory modeling. The role of subsequent H 2 O exposure in the hydrolysis of carbonyl and cyclopentadienyl ligands to complete the installation is also investigated. In situ FTIR study reveals that upon exposure of CpCo(CO) 2 to MOF-808 at 115 °C, a long-lived, stable intermediate is formed that presents carbonyl stretching vibrations similar to the undissociated precursor that are attributed to multiple chemisorbed carbonyl complexes. In MOF-808, cobalt species are initially absorbed near the BTC linker rather than directly on the nodes, revealing the importance of non-covalent interactions in the installation process. DFT suggests that H 2 O exposure promotes carbonyl elimination but leaves a cyclopentadienyl-capped cobalt that is more stable than the complete hydrolysis product. The simulations are consistent with cobalt installation in MOF-808 using CpCo(CO) 2 and H 2 O at 115 °C and further consistent with the lack of ALD thin film deposition of cobalt oxide thin films on planar supports.
36 MATERIALS SCIENCE↗
Mechanism of Vapor-Phase Infiltration of Organometallic Hf in Poly(Methyl Methacrylate) for Hybrid Resist Applications
Inorganic–organic hybrid thin films synthesized by vapor-phase infiltration (VPI) of metal oxides into organic photoresists, such as poly(methyl methacrylate) (PMMA), have recently demonstrated their utility in extreme ultraviolet lithography, critical for angstrom-era semiconductor device miniaturization. Hafnium oxide infiltration has been reported recently for this purpose, but its detailed VPI mechanism has remained largely unexplored. In this study, we investigated the VPI characteristics and mechanisms of tetrakis(dimethylamido)hafnium (TDMAHf)─the hafnium precursor predominantly used for VPI in the field─into PMMA and examined its impact on electron-beam lithography (EBL) exposure behavior. VPI was performed at temperatures ranging from 85 to 150 °C, with chemical interactions characterized using infrared reflection-absorption spectroscopy, and resist patterning performance was evaluated through EBL dose-sensitivity assessments. The results indicate that TDMAHf forms a reversible adduct with PMMA at temperatures up to 120 °C, whereas at 150 °C, covalent bond formation occurs, most likely via dealkylation that leads to acetate formation. EBL studies reveal that resist sensitivity is influenced by both infiltration temperature and developer selection, with aqueous isopropyl alcohol development demonstrating enhanced sensitivity compared to organic solvent-based development. The optimized infiltration protocol at 120 °C ensures a uniform inorganic distribution without compromising resist dissolution. These findings not only help refine hybrid resist patterning performance but also offer insights potentially applicable to the VPI of other homoleptic metal-amide organometallic VPI precursors that include TDMA ligands.
36 MATERIALS SCIENCE↗
Deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase-epitaxy n-GaAs
The paper presents deep-level transient spectroscopy studies of Ni- and Zn-diffused vapor-phase epitaxy n-GaAs. Nickel diffused into VPE n-GaAs reduces the hole diffusion length L sub p from 4.3 to 1.1 microns. Deep-level transient spectroscopy was used to identify energy levels in Ni-diffused GaAs; the as-grown VPE GaAs contains traces of these levels and an electron trap. Ni diffusion reduces the concentration of this level by an amount that matches the increase in concentration of each of the two Ni-related levels. A technique for measuring minority-carrier capture cross sections was developed, which indicates that L sub p in Ni-diffused VPE n-GaAs is controlled by the E sub c - 0.39 eV defect level.
Partin, D. L.↗
Sintering behavior of ultrafine silicon carbide powders obtained by vapor phase reaction
The sintering behavior of ultrafine SiC powder with average particle size of about 0.01-0.06 microns produced by a vapor phase reaction of the Me4Si-H2 system was studied at the temperature range of 1400-2050 deg. It was found that the homogeneous dispersion of C on SiC particles is important to remove the surface oxide layer effectively. B and C and inhibitive effect on SiC grain growth.
Okabe, Y.↗
A technique for eliminating white phosphorus deposits in vapor phase epitaxy systems
A technique of heating the exhaust lines is described whereby phosphorus in the exhaust portion of an organometallic vapor phase epitaxy reactor is encouraged to deposit in the red form rather than the pyrophoric white form. This technique is simple, effective, and does not hinder or limit the conditions under which the reactor may be operated.
Wilt, D. M.↗