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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Reduced-temperature sintering of spinel-type coatings and layers with metallic alloy powder precursors

A method of forming a spinel coating on a substrate is disclosed including the steps of coating at least a portion of the substrate with a precursor including an alloy powder, and sintering the precursor at a temperature of less than 1000 degrees Celsius to form the spinel coating. The alloy powder used for the precursor can include particles having a particle size of less than 10 micrometers. The method can be utilized to form spinel coatings as contact surfaces between electrodes and interconnects of solid oxide fuel cell (SOFC) stacks.

Zhu, Jiahong↗

Nonlinear Convection in Mushy Layers

When alloys solidify in a gravitational field there are complex interactions between solidification and natural, buoyancy-driven convection that can alter the composition and impair the structure of the solid product. The particular focus of this project has been the compositional convection within mushy layers that occurs in situations where the lighter component of the alloy is rejected into the melt during solidification by cooling from below. The linear stability of such a situation was previously described and has been further elucidated in a number of published articles. Here we describe some recent developments in the study of nonlinear evolution of convection in mushy layers.

Worster, M. Grae↗

In 2 O 3 -Ga 2 O 3 Alloys as Potential Buffer Layers in CdTe Thin-Film Solar Cells

The efficiency of state-of-the-art Cd Te solar cells remains limited by the relatively low open-circuit voltage (V OC ). Improving the front interface is key towards realizing a higher V OC after achieving the necessary bulk carrier density and lifetime. Recent efforts in identifying buffer layers beyond Cd S have focused on Mg x Zn 1-x O, which offers tunability of the band offsets, but often suffers from high interfacial defect densities. Ga 2 O 3 -based buffer layers demonstrate tremendous improvements in interfacial defect passivation in crystalline silicon and dye-sensitized solar cells, leading to record high V OC , yet remain largely unexplored in Cd Te-based devices. Here, we perform hybrid density-functional-theory calculations to investigate pure Ga 2 O 3 and InGaO 3 alloys as a window layer in Cd Te photovoltaics. We report calculated band offsets for several pairs of solid-solid interfaces comprising transparent conducting oxide (TCO) and Cd Te heterojunctions. The results support a large conduction band offset spike of 0.67 eV for the Cd Te/Ga 2 O 3 (100) interface, while the offset is reduced to 0.18 eV for the InGaO 3 alloy and matches closely with the preferred optimum value of 0.2 eV. Device-level modeling tests of Cd Te solar cells integrating our results indicate that the highest efficiency is achieved with InGaO 3 acting both as a buffer layer and TCO. Finally, our results suggest that alloys of In 2 O 3 and Ga 2 O 3 may be attractive alternatives to Mg x Zn 1-x O for tailoring optimal conduction-band offsets of the buffer and TCO layers in high-efficiency Cd Te thin-film solar cells.

14 SOLAR ENERGY↗

Predicting Fatigue Lives Of Metal-Coated Nickel-Alloy Parts

LAYER computer program performs thermomechanical-fatigue-life prediction for coated, nickel-based anisotropic materials. Intended to provide gas-turbine-airfoil designers with means to accurately project service lifetimes. Written in FORTRAN 77.

Mcgaw, Michael A.↗

Solution Processed Ternary Tin (II) Alloy as Hole–Transport Layer of Sn–Pb Perovskite Solar Cells for Enhanced Efficiency and Stability

Tin-lead (Sn-Pb) narrow bandgap (NBG) perovskites show great potential in both single-junction and all-perovskite tandem solar cells. Sn-Pb perovskite solar cells (PSCs) are still limited by low charge collection efficiency and poor stability. Here, we report a ternary Sn (II) alloy of SnOCl as the hole-transport material (HTM) with a work function of 4.95 eV for Sn-Pb PSCs. The solution processed SnOCl layer has a texture structure which not only reduces the optical loss of the devices but also changes grain growth of Sn-Pb perovskites and boosts the carrier diffusion length to 3.63 μm. The formation of small perovskite grains at the HTM/perovskite interface is suppressed. These result in an almost constant internal quantum efficiency of 96 ± 2% across the absorption spectrum of Sn-Pb perovskites. The SnOCl HTM significantly enhances the stability of Sn-Pb PSCs with 87% of its initial efficiency retained after 1-sun illumination for 1,200 h, and keep 85% efficiency under 85°C thermal stress for 1,500 h. Furthermore, the hybrid HTM further improve the stabilized efficiencies of single-function Sn-Pb PSCs and all-perovskite tandem solar cells to 23.2% and 25.9%, respectively. This discovery opens an avenue to the multi-component metal alloys as HTM in PSCs.

36 MATERIALS SCIENCE↗

Characterization of multilayer GaAs/AlGaAs transistor structures by variable angle spectroscopic ellipsometry

Variable angle of incidence spectroscopic ellipsometry (VASE) has been implemented as a means of determining layer thickness, alloy composition, and growth quality of GaAs/AlGaAs samples composed of relatively thick layers as well as superlattices. The structures studied in this work contained GaAs/AlGaAs multilayers with a superlattice 'barrier' and were grown for later formation of modulation-doped field effect transistors (MODFETs). Sample modeling was performed by treating the superlattice as a bulk AlGaAs layer of unknown composition. Extremely good data fits were realized when five layer thicknesses and two alloy ratios were allowed to vary in a regression analysis. Room temperature excitonic effects associated with the e-hh(1), e-lh(1) and e-hh(2) transitions were observed in the VASE data.

Merkel, Kenneth G.↗

Development & Validation of Low-Cost, Highly-Durable, Spinel-Based Materials for SOFC Cathode-Side Contact (Final Report)

A cathode-side contact layer is required to provide and maintain stable electrical conduction paths between the interconnect and cathode in a solid oxide fuel cell (SOFC) stack assembly and thus minimize the ohmic resistance and stack power loss. Current cathode-interconnect contact materials are based on noble metals, electrically-conductive perovskites, their composite materials, etc. These materials are either too expensive or do not possess the overall balanced performance required for the cathode-side contact application. To achieve the DOE SOFC system cost and performance stability goals, a new generation of low-cost, high-performance contact materials needs to be developed. In this project, spinel-based materials thermally converted from the Fe-Ni and Co-Mn based alloy precursors were developed and validated for the cathode-side contact application. The precursor alloy compositions were optimized via a combination of composition screening in the (Ni,Fe) 3 O 4 and (Mn,Co) 3 O 4 spinel system, alloy design using physical metallurgy principles, and cost considerations. The alloy powders with the desired composition and particle size were manufactured via gas atomization. The optimal process parameters for thermal conversion of these alloy precursor layers to a spinel-based layer were identified, i.e., 900°C x 2h in air, which is close to the initial stack firing condition. The area-specific resistances (ASRs) of the interconnect/contact/cathode test assemblies with the developed contact layer were determined for various durations (up to 5000 h) under simulated cathodic operation conditions. Some of the alloy-derived spinel contacts exhibited the lowest ASR and ASR degradation rate. The in-stack performance of the most promising alloy-derived contact layer is currently being evaluated via stack testing. To reduce the stack cost, the Co-Mn based alloy powders were utilized as the precursor for synthesis of dense spinel-based interconnect coating. By optimizing both the initial powder size/distribution and the alloy powder composition, a dense (Mn,Co) 3 O 4 -based spinel coating was achieved. Furthermore, co-sintering of the coating/contact dual-layer structure under the initial stack firing condition was realized by utilizing the tailored Co-Mn alloy precursors. Cost analysis of the developed technology indicated a total stack cost reduction of around 10.6% with the implementation of co-sintering of the interconnect coating and the contact layer during initial stack firing. Since low-cost processes such as screen printing is utilized in the precursor application and no reduction heat treatment is needed for the coating formation, the developed technology can be readily implemented at the industrial partner’s manufacturing facilities with no additional capital investment needed.

08 HYDROGEN↗

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, auger electron spectroscopy, and x ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, Auger electron spectroscopy, and X-ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X-ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

Systems and Methods for Fabricating Objects Including Amorphous Metal Using Techniques Akin to Additive Manufacturing

Systems and methods in accordance with embodiments of the invention fabricate objects including amorphous metals using techniques akin to additive manufacturing. In one embodiment, a method of fabricating an object that includes an amorphous metal includes: applying a first layer of molten metallic alloy to a surface; cooling the first layer of molten metallic alloy such that it solidifies and thereby forms a first layer including amorphous metal; subsequently applying at least one layer of molten metallic alloy onto a layer including amorphous metal; cooling each subsequently applied layer of molten metallic alloy such that it solidifies and thereby forms a layer including amorphous metal prior to the application of any adjacent layer of molten metallic alloy; where the aggregate of the solidified layers including amorphous metal forms a desired shape in the object to be fabricated; and removing at least the first layer including amorphous metal from the surface.

Hofmann, Douglas↗

Ellipsometric study of metal-organic chemically vapor deposited III-V semiconductor structures

An ellipsometric study of MOCVD-grown layers of AlGaAs and InGaAs in thick films and strained layer complex structures is presented. It is concluded that the ternary composition of thick nonstrained layers can be accurately determined to within experimental errors using numerical algorithms. In the case of complex structures, thickness of all layers and the alloy composition of nonstrained layers can be determined simultaneously, provided that the correlations between parameters is no higher than 0.9.

Alterovitz, Samuel A.↗

nBn Infrared Detector Containing Graded Absorption Layer

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Gunapala, Sarath D.↗

Coating with overlay metallic-cermet alloy systems

A base layer of an oxide dispersed, metallic alloy (cermet) is arc plasma sprayed onto a substrate, such as a turbine blade, vane, or the like, which is subjected to high temperature use. A top layer of an oxidation, hot corrosion, erosion resistant alloy of nickel, cobalt, or iron is then arc plasma sprayed onto the base layer. A heat treatment is used to improve the bonding. The base layer serves as an inhibitor to interdiffusion between the protective top layer and the substrate. Otherwise, the 10 protective top layer would rapidly interact detrimentally with the substrate and degrade by spalling of the protective oxides formed on the outer surface at elevated temperatures.

Gedwill, M. A.↗

Intercalation And High-Pressure Effects On Structural Phase Transitions In Layered As x P 1-x Alloys

This project was aimed at understanding the role of composition, intercalation, and high pressure on the structural evolution of black phosphorous (BP) and layered arsenic phosphorous alloys, As y P 1-y . Under normal conditions, BP is the most stable phase of phosphorous, known as the α-phase, characterized by an orthorhombic honeycomb puckered crystal structure with the Cmca space group. On the other hand, the most stable phase of arsenic is its β-phase, known as gray arsenic (g-As), which has a rhombohedral buckled layered crystal structure with the R3m space group. In a wide range of compositions (y < 0.83), the arsenic phosphorous alloys form the α-phase, known as black arsenic phosphorous (b-As y P 1-y ) with a similar structure to BP. The project was aimed at the synthesis of BP and b-As y P 1-y with different compositions and at studying the structural evolution of these materials during intercalation with alkali metal (especially Li), and under high-pressure conditions. The main goals were to gain a better understanding of these processes and structural changes taking place under these conditions. In particular, the project was aimed at addressing whether such conditions could induce a structural transition between the α- and β-phases. For this, a series of systematic in-situ studies were conducted, including electrochemical lithium intercalation in an in-situ electrochemical cell, and high-pressure experiments in a diamond anvil cell (DAC). Overall, both types of experiments have shown that above a certain composition-dependent threshold level of intercalation or high pressure, the system undergoes phase segregation rather than phase transition. Specifically, the segregation of the excess arsenic was observed, and a single-phase system of b-As y P 1-y transformed into a two-phase system consisting of b-As y P 1-y and g-As, through the following process: 1∗(b-As y P 1-y ) → 1∗(b As y-δ P 1-y ) + δ∗(g-As). Also, the study showed that intercalation and high-pressure are two competing rather than synergistic processes causing at least a partial cancelation of these two factors

36 MATERIALS SCIENCE↗

Method of coating high atomic number metals onto oxygen or hydroxyl rich surfaces

Methods for making layered materials and layered materials including high atomic number metals and metal alloys adhered to surfaces are provided. Such surfaces may be oxygen or hydroxyl rich surfaces. Certain methods include depositing a tie down layer of a first metal or metal alloy particles onto a first surface of base material and depositing a high atomic number metal or metal alloy layer onto the first surface after depositing the tie down layer, wherein particles comprising the high atomic number metal or metal alloy layer have a higher atomic number than the first metal or metal alloy particles.

36 MATERIALS SCIENCE↗

Proximity effect between superconductivity and normal metals

The SNS junctions were limited to having gold (n) layers of less than 3000 A in order to avoid having the tin (S) films become normal under the influence of the signal current in the gold. The gold layer was alloyed with 10 wt% copper to shorten its electronic mean free path, increasing the tin layer critical current while decreasing the Josephson critical current. It was also found that a previously reported anomalous voltage shift in the presence of I2 is caused by the tin being driven normal. After deposition, the samples were transferred to a conventional cryostat to provide better thermal contact to the films. This reduction of heating in the films produced more linear I-V characteristics and a change in the constant voltage current gain. In order to achieve power gain the SNS device must be operated at lower temperatures were the effects of fluctuations are less and be constructed such that the input resistance is much reduced and the dynamic output resistance increased. A geometry is proposed using a more sophisticated evaporator.

Meissner, H.↗