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At least 55 records · Page 3

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NASA NTRS1983

High stability amplifier

An electrical RF signal amplifier for providing high temperature stability and RF isolation and comprised of an integrated circuit voltage regulator, a single transistor, and an integrated circuit operational amplifier mounted on a circuit board such that passive circuit elements are located on side of the circuit board while the active circuit elements are located on the other side is described. The active circuit elements are embedded in a common heat sink so that a common temperature reference is provided for changes in ambient temperature. The single transistor and operational amplifier are connected together to form a feedback amplifier powered from the voltage regulator with transistor implementing primarily the desired signal gain while the operational amplifier implements signal isolation. Further RF isolation is provided by the voltage regulator which inhibits cross-talk from other like amplifiers powered from a common power supply. Input and output terminals consisting of coaxial connectors are located on the sides of a housing in which all the circuit components and heat sink are located.

Adams, W. A.↗

NASA NTRS1985

Amplifier for measuring low-level signals in the presence of high common mode voltage

A high common mode rejection differential amplifier wherein two serially arranged Darlington amplifier stages are employed and any common mode voltage is divided between them by a resistance network. The input to the first Darlington amplifier stage is coupled to a signal input resistor via an amplifier which isolates the input and presents a high impedance across this resistor. The output of the second Darlington stage is transposed in scale via an amplifier stage which has its input a biasing circuit which effects a finite biasing of the two Darlington amplifier stages.

Lukens, F. E.↗

NASA NTRS1984

The 20 GHz GaAs monolithic power amplifier module development

The development of a 20 GHz GaAs FET monlithic power amplifier module for advanced communication applications is described. Four-way power combing of four 0.6 W amplifier modules is used as the baseline approach. For this purpose, a monolithic four-way traveling-wave power divider/combiner was developed. Over a 20 GHz bandwidth (10 to 30 GHz), an insertion loss of no more than 1.2 dB was measured for a pair of back-to-back connected divider/combiners. Isolation between output ports is better than 20 dB, and VSWRs are better than 21:1. A distributed amplifier with six 300 micron gate width FETs and gate and drain transmission line tapers has been designed, fabricated, and evaluated for use as an 0.6 W module. This amplifier has achieved state-of-the-art results of 0.5 W output power with at least 4 dB gain across the entire 2 to 21 GHz frequency range. An output power of 2 W was achieved at a measurement frequency of 18 GHz when four distributed amplifiers were power-combined using a pair of traveling-wave divider/combiners. Another approach is the direct common-source cascading of three power FET stages. An output power of up to 2W with 12 dB gain and 20% power-added efficiency has been achieved with this approach (at 17 GHz). The linear gain was 14 dB at 1 W output. The first two stages of the three-stage amplifier have achieved an output power of 1.6 W with 9 dB gain and 26% power-added efficiency at 16 GHz.

Source record↗

NASA NTRS1987

Low phase noise oscillator using two parallel connected amplifiers

A high frequency oscillator is provided by connecting two amplifier circuits in parallel where each amplifier circuit provides the other amplifier circuit with the conditions necessary for oscillation. The inherent noise present in both amplifier circuits causes the quiescent current, and in turn, the generated frequency, to change. The changes in quiescent current cause the transconductance and the load impedance of each amplifier circuit to vary, and this in turn results in opposing changes in the input susceptance of each amplifier circuit. Because the changes in input susceptance oppose each other, the changes in quiescent current also oppose each other. The net result is that frequency stability is enhanced.

Kleinberg, Leonard L.↗

NASA NTRS1985

V-band IMPATT power amplifier

This program is the result of the continuing demand and future requirement for a high data rate 60-GHz communications link. A reliable solid-state transmitter which delivers the necessary power over a wide bandwidth using the present IMPATT diode technology required the development of combining techniques. The development of a 60-GHz IMPATT power combiner amplifier is detailed. The results form a basis from which future wideband, high-power IMPATT amplifiers may be developed. As a result, several state-of-the-art advancements in millimeter-wave components technology were achieved. Specific achievements for the amplifier integration were: development of a nonresonant divider/combiner circuit; reproducible multiple junction circulator assemblies; and reliable high power 60-GHz IMPATT diodes. The various design approaches and tradeoffs which lead to the final amplifier configuration are discussed. A detailed circuit design is presented for the various amplifier components, and the conical line combiner, radial line combiner, and circulator development are discussed. The performance of the amplifier, the overall achievement of the program, the implications of the results, and an assessment of future development needs and recommendations are examined.

Schell, S. W.↗

NASA NTRS1988

On 32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz High Electron Mobility Transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 K to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Bautista, J. J.↗

NASA NTRS1989

32-GHz cryogenically cooled HEMT low-noise amplifiers

The cryogenic noise temperature performance of a two-stage and a three-stage 32 GHz high electron mobility transistor (HEMT) amplifier was evaluated. The amplifiers employ 0.25 micrometer conventional AlGaAs/GaAs HEMT devices, hybrid matching input and output microstrip circuits, and a cryogenically stable dc biasing network. The noise temperature measurements were performed in the frequency range of 31 to 33 GHz over a physical temperature range of 300 K down to 12 K. Across the measurement band, the amplifiers displayed a broadband response, and the noise temperature was observed to decrease by a factor of 10 in cooling from 300 to 15 K. The lowest noise temperature measured for the two-stage amplifier at 32 GHz was 35 K with an associated gain of 16.5 dB, while the three-stage amplifier measured 39 K with an associated gain of 26 dB. It was further observed that both amplifiers were insensitive to light.

Duh, K. H. George↗

NASA NTRS1991

A cooled 1-2 GHz balanced HEMT amplifier

The design details and measurement results for a cooled 1-GHz-bandwidth L-band HEMT amplifier are presented. The HEMT noise parameters were measured at a physical temperature of 12 K, and a balanced configuration was adopted. This has the advantage of providing a good input match even though the amplifiers in the two arms of the balanced circuit are poorly matched. However, there are disadvantages. The loss of the input hybrid degrades the noise temperature and coupling errors in the hybrids, and differences between the amplifiers reduce the gain and result in a noise contribution from the input load. In the amplifier described, these effects degrade the noise temperature by less than 1 K. The amplifier uses commercially available packaged HEMT devices. At a physical temperature of 12 K the amplifier achieves noise temperatures between 3 and 6 K over the 1-2-GHz band. The associated gain is about 20 dB.

Padin, Stephen↗

NASA NTRS1994

Phase properties of multicomponent superposition states in various amplifiers

There have been theoretical studies for generation of optical coherent superposition states. Once the superposition state is generated it is natural to ask if it is possible to amplify it without losing the nonclassical properties of the field state. We consider amplification of the superposition state in various amplifiers such as a sub-Poissonian amplifier, a phase-sensitive amplifier and a classical amplifier. We show the evolution of phase probability distribution functions in the amplifier.

Lee, Kang-Soo↗

NASA NTRS2001

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Sullivan, Gerry↗

NASA NTRS2001

High Efficiency Microwave Power Amplifier: From the Lab to Industry

Since the beginnings of space travel, various microwave power amplifier designs have been employed. These included Class-A, -B, and -C bias arrangements. However, shared limitation of these topologies is the inherent high total consumption of input power associated with the generation of radio frequency (RF)/microwave power. The power amplifier has always been the largest drain for the limited available power on the spacecraft. Typically, the conversion efficiency of a microwave power amplifier is 10 to 20%. For a typical microwave power amplifier of 20 watts, input DC power of at least 100 watts is required. Such a large demand for input power suggests that a better method of RF/microwave power generation is required. The price paid for using a linear amplifier where high linearity is unnecessary includes higher initial and operating costs, lower DC-to-RF conversion efficiency, high power consumption, higher power dissipation and the accompanying need for higher capacity heat removal means, and an amplifier that is more prone to parasitic oscillation. The first use of a higher efficiency mode of power generation was described by Baxandall in 1959. This higher efficiency mode, Class-D, is achieved through distinct switching techniques to reduce the power losses associated with switching, conduction, and gate drive losses of a given transistor.

Sims, William Herbert, III↗

NASA NTRS2005

High-efficiency solid state power amplifier

A high-efficiency solid state power amplifier (SSPA) for specific use in a spacecraft is provided. The SSPA has a mass of less than 850 g and includes two different X-band power amplifier sections, i.e., a lumped power amplifier with a single 11-W output and a distributed power amplifier with eight 2.75-W outputs. These two amplifier sections provide output power that is scalable from 11 to 15 watts without major design changes. Five different hybrid microcircuits, including high-efficiency Heterostructure Field Effect Transistor (HFET) amplifiers and Monolithic Microwave Integrated Circuit (MMIC) phase shifters have been developed for use within the SSPA. A highly efficient packaging approach enables the integration of a large number of hybrid circuits into the SSPA.

Wallis, Robert E.↗

NASA NTRS1989

Crystal oscillators using negative voltage gain, single pole response amplifiers

A simple and inexpensive crystal oscillator is provided which employs negative voltage gain, single pole response amplifiers. The amplifiers may include such configurations as gate inverters, operational amplifiers and conventional bipolar transistor amplifiers, all of which operate at a frequency which is on the roll-off portion of their gain versus frequency curve. Several amplifier feedback circuit variations are employed to set desired bias levels and to allow the oscillator to operate at the crystal's fundamental frequency or at an overtone of the fundamental frequency. The oscillator is made less expensive than comparable oscillators by employing relatively low frequency amplifiers and operating them at roll-off, at frequencies beyond which they are customarily used. Simplicity is provided because operation at roll-off eliminates components ordinarily required in similar circuits to provide sufficient phase-shift in the feedback circuitry for oscillation to occur.

Kleinberg, Leonard L.↗

NASA NTRS2008

Cross-differential amplifier

A cross-differential amplifier is provided. The cross-differential amplifier includes an inductor connected to a direct current power source at a first terminal. A first and second switch, such as transistors, are connected to the inductor at a second terminal. A first and second amplifier are connected at their supply terminals to the first and second switch. The first and second switches are operated to commutate the inductor between the amplifiers so as to provide an amplified signal while limiting the ripple voltage on the inductor and thus limiting the maximum voltage imposed across the amplifiers and switches.

Hajimiri, Seyed-Ali↗

NASA NTRS2008

Extreme High and Low Temperature Operation of the Silicon-On-Insulator Type CHT-OPA Operational Amplifier

A new operational amplifier chip based on silicon-on-insulator technology was evaluated for potential use in extreme temperature environments. The CHT-OPA device is a low power, precision operational amplifier with rail-to-rail output swing capability, and it is rated for operation between -55 C and +225 C. A unity gain inverting circuit was constructed utilizing the CHT-OPA chip and a few passive components. The circuit was evaluated in the temperature range from -190 C to +200 C in terms of signal gain and phase shift, and supply current. The investigations were carried out to determine suitability of this device for use in space exploration missions and aeronautic applications under wide temperature incursion. Re-restart capability at extreme temperatures, i.e. power switched on while the device was soaked at extreme temperatures, was also investigated. In addition, the effects of thermal cycling under a wide temperature range on the operation of this high performance amplifier were determined. The results from this work indicate that this silicon-on-insulator amplifier chip maintained very good operation between +200 C and -190 C. The limited thermal cycling had no effect on the performance of the amplifier, and it was able to re-start at both -190 C and +200 C. In addition, no physical degradation or packaging damage was introduced due to either extreme temperature exposure or thermal cycling. The good performance demonstrated by this silicon-on-insulator operational amplifier renders it a potential candidate for use in space exploration missions or other environments under extreme temperatures. Additional and more comprehensive characterization is, however, required to establish the reliability and suitability of such devices for long term use in extreme temperature applications.

Patterson, Richard↗

NASA NTRS2010

Cross-differential amplifier

Hajimiri, Seyed-Ali↗

NASA NTRS2010

Multiple Differential-Amplifier MMICs Embedded in Waveguides

Compact amplifier assemblies of a type now being developed for operation at frequencies of hundreds of gigahertz comprise multiple amplifier units in parallel arrangements to increase power and/or cascade arrangements to increase gains. Each amplifier unit is a monolithic microwave integrated circuit (MMIC) implementation of a pair of amplifiers in differential (in contradistinction to single-ended) configuration. Heretofore, in cascading amplifiers to increase gain, it has been common practice to interconnect the amplifiers by use of wires and/or thin films on substrates. This practice has not yielded satisfactory results at frequencies greater than 200 Hz, in each case, for either or both of two reasons: Wire bonds introduce large discontinuities. Because the interconnections are typically tens of wavelengths long, any impedance mismatches give rise to ripples in the gain-vs.-frequency response, which degrade the performance of the cascade.

Kangaslahti, Pekka↗

NASA NTRS2011

Cross-differential amplifier

Hajimiri, Seyed-Ali↗