SEARCH · Search NASA

Results for “annealing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

All sources NASA NTRS DOE OSTI

NASA NTRS2019

The Power of Pausing: Advancing Understanding of Thermalization in Experimental Quantum Annealers

We investigate alternative annealing schedules on the current generation of quantum annealing hardware (the D-Wave 2000Q), which includes the use of forward and reverse annealing with an- intermediate pause. This work provides new insights into the inner workings of these devices (and quantum devices in general), particular into how thermal effects govern the system dynamics. We show that a pause mid-way through the anneal can cause a dramatic change in the output distribution, and we provide evidence suggesting thermalization is indeed occurring during such a pause. We demonstrate that upon pausing the system in a narrow region shortly after the minimum gap, the probability of successfully finding the ground state of the problem Hamiltonian can be increased by several orders of magnitude. We relate this effect to relaxation (i.e. thermalization) after diabatic and thermal excitations that occur in the region near to the minimum gap. For a set of large-scale problems of up to 500 qubits, we demonstrate that the distribution returned from the annealer very closely matches a (classical) Boltzmann distribution of the problem Hamiltonian, albeit one with a temperature at least 1.5 times higher than the (effective) temperature of the device. Moreover, we show that larger problems are more likely to thermalize to a classical Boltzmann distribution.

Marshall, Jeffrey↗

NASA NTRS2016

Applying Simulated Annealing to Problems in Model-Based Diagnosis

Generating all diagnoses is computationally intractable. Therefore, many of the state-of-the-art approaches are incomplete. Quantum computers may however offer a solution. The first commercially available quantum computer is being used to minimize polynomials that are difficult for classical simulated annealing but easy for quantum annealing. All problems in Model-based Diagnosis (MBD) can be transformed into a polynomial minimization problem, allowing one to apply a quantum algorithm called quantum annealing to solve MBD problems. To better understand the need for this quantum approach, we designed two simulated annealingdiagnostic algorithms tailored to run on a polynomial representation of MBD. These algorithms differ on their policy for random neighborhood variable selection. In addition, enhanced metrics were devised to provide more diagnostic coverage. Finally, these two simulated annealing algorithms were analyzed and empirically evaluated and compared against state-of-the-art probabilistic methods for MBD such as SAFARI using ISCAS-85.

Simulated annealing↗

NASA NTRS1973

Temperature, stress, and annealing effects on the luminescence from electron-irradiated silicon

Low-temperature photoluminescence spectra are presented for Si crystals which have been irradiated with high-energy electrons. Studies of isochronal annealing, stress effects, and the temperature dependences of the luminescence are used to discuss the nature of the luminescent transitions and the properties of defects. Two dominant bands present after room-temperature anneal of irradiated material are discussed, and correlations of the properties of these bands are made with known Si defects. A band between 0.8 and 1.0 eV has properties which are related to those of the divacancy, and a band between 0.6 and 0.8 eV has properties related to those of the Si-G15(K) center. Additional peaks appear in the luminescence after high-temperature anneal; the influence of impurities and the effects of annealing of these lines are discussed.

Jones, C. E.↗

NASA NTRS1975

Deformation and annealing study of Nicraly

Extensive experiments were carried out on the ODS alloy Nicraly, (an alloy prepared by mechanical alloying and consolidating a powder blend consisting of 16% chromium, 4% aluminum, 2-3% yttria, balance nickel), in efforts to develop methods of controlling the grain size and grain shape of the material. The experiments fell into two general categories: variations in the annealing parameters using the as-extruded material as it was received, and various thermomechanical processing schedules (various combinations of cold work and annealing). Success was achieved in gaining grain size and grain shape control by annealing of the as-extruded material. By proper selection of annealing temperature and cooling rates, the grain size of the as-received material was increased almost two orders of magnitude (from an average grain dimension of 0.023 mm to 1.668 mm) while the aspect ratio was increased by some 50% (from 20:1 to 30:1). No success was achieved in gaining significant control of the grain size and shape of the material by thermo-mechanical processing.

Trela, D. M.↗

NASA NTRS1978

Annealing of GaAs solar cells damaged by electron irradiation

Measurements of thermal annealing of GaAlAs/GaAs solar cells damaged by 1 MeV electron irradiation are reported, and the magnitude of the short-circuit current recovery is discussed. The damaged cells are annealed in a vacuum at 200 C. A cell irradiated at 10 to the 13th power electrons per sq cm recovers all its lost short-circuit current after 15 hours of annealing. Possible application of the annealing process to solar cells in space is also considered.

Walker, G. H.↗

NASA NTRS1979

CO2 laser annealing of 50-microns-thick silicon solar cells

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Walker, F. E.↗

NASA NTRS1980

Simultaneous radiation damage and annealing of GaAs solar cells

In this report, concepts and equations are developed to describe the simultaneous radiation damage and annealing of solar cells. The annealing characteristics of three types of defects are employed to study three examples of continuous irradiation and annealing. One example shows that the effective damage could be reduced by a factor of fifty. The difficulty of a laboratory experiment properly simulating the effects in space are discussed. Potential advantages of continuous annealing such as reduction of stable defect formation and omission of radiation cover glasses are presented.

Heinbockel, J. H.↗

NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗

NASA NTRS1980

Proton damage annealing kinetics in silicon solar cells

Proton damage annealing as a method for prolonging the life of solar power systems in space is discussed. Variables are minimized and fundamental characteristics of proton damage annealing are considered. The usefulness of annealing for prolonging space missions is evaluated. A preliminary determination of optimum annealing conditions is made, and base data provided for more detailed research programs.

Horne, W. E.↗

NASA NTRS1982

Pre- and post-annealing of mechanical damage in silicon wafers

Basic properties of mechanical damage in silicon consisting of cracks and abrasion were studied using transmission electron microscopy. The crystallographic structure of mechanical damage was determined before and after high temperature annealing. The main findings include that stresses in silicon around crack tips are not plastically relieved at room temperature and that abrasion at room temperature introduces shear loops into the silicon. It was also found that cracks of micron size can be annealed out, specifically, if cleavage occurs on 111 planes. The healing products of such cracks are 60 deg and 90 deg dislocations. Submicron cracks transform into stacking faults during annealing. Likewise high concentrations of shear loops due abrasion were found to anneal into stacking faults. A one to one correlation between surface areas containing small cracks and stacking faults was made. Measurements of damage removal on silicon surfaces through chemical-mechanical etching techniques are presented. It is shown that silicon dioxide repolishes damaged silicon surfaces most effectively.

Schwottke, G. H.↗

NASA NTRS1981

Sub-T/g/ annealing studies of advanced epoxy-matrix graphite-fiber-reinforced composites

Annealing at temperatures below the glass transition temperature (sub-T/g/ annealing) in structural epoxy network glasses is found to affect long-term mechanical properties of symmetrically (+ or - 45 deg) reinforced 16-lamina graphite/epoxy composites. Post-cured specimens of Thornel 300 graphite/Narmco 5208 epoxy are sub-T(g) annealed at 140 C for about 10, 100, 1000, 10,000, and 100,000 min with a prior quenching above T(g). The ultimate tensile strength, strain-to-break, and static toughness of the composite materials are found to decrease as a function of sub-T(g) annealing time, while no weight loss is observed. Time-dependent changes in properties are explained by a physical aging concept based on free-volume decreases in the nonequilibrium glassy state of network epoxies, and results imply that changes in composite properties may occur with the service time.

Kong, E. S. W.↗

NASA NTRS1981

Effects of low temperature periodic annealing on the deep-level defects in 200 keV proton irradiated AlGaAs-GaAs solar cells

The GaAs solar cell has shown good potential for space applications. However, degradation in performance occurred when the cells were irradiated by high energy electrons and protons in the space environment. The considered investigation is concerned with the effect of periodic thermal annealing on the deep-level defects induced by the 200 keV protons in the AlGaAs-GaAs solar cells. Protons at a fluence of 10 to the 11th P/sq cm were used in the irradiation cycle, while annealing temperatures of 200 C (for 24 hours), 300 C (six hours), and 400 C (six hours) were employed. The most likely candidate for the E(c) -0.71 eV electron trap observed in the 200 keV proton irradiated samples may be due to GaAs antisite, while the observed E(v) +0.18 eV hole trap has been attributed to the gallium vacancy related defect. The obtained results show that periodic annealing in the considered case does not offer any advantages over the one time annealing process.

Li, S. S.↗

NASA NTRS1982

Radiation damage and annealing in large area n+/p/p+ GaAs shallow homojunction solar cells

Annealing of radiation damage was observed for the first time in VPE-grown, 2- by 2-cm, n+/p/p+ GaAs shallow homojunction solar cells. Electrical performance of several cells was determined as a function of 1-MeV electron fluence in the range of 10 to the 13th power to 10 to the 15th power e-/sq cm and as a function of thermal annealing time at various temperatures. Degradation of normalized power output after a fluence of 10 to the 15th power 1-MeV electrons/sq cm ranged from a low of 24 to 31 percent of initial maximum power. Normalized short circuit current degradation was limited to the range from 10 to 19 percent of preirradiated values. Thermal annealing was carried out in a flowing nitrogen gas ambient, with annealing temperatures spanning the range from 125 to 200 C. Substantial recovery of short circuit current was observed at temperatures as low as 175 C. In one case improvement by as much as 10 percent of the postirradiated value was observed. The key features of these cells are their extremely thin emitter layers (approxmately 0.05 micrometers), the absence of any Al sub xGd sub 1-x As passivating window layer, and their fabrication by vapor phase epitaxy.

Flood, D. J.↗

NASA NTRS1985

Burst annealing of electron damage in silicon solar cells

A study has been performed of burst annealing of electron damage in silicon solar cells. Three groups of cells consisting of 3 and 0.3 ohm-cm silicon were exposed to fluences of 2 x 10 to the 14th power, 4 x 10 to the 14th power, and 8 x 10 to the 14th power 1-MeV electrons/sq cm, respectively. They were subsequently subjected to 1-minute bursts of annealing at 500 C. The 3 ohm-cm cells showed complete recovery from each fluence level. The 0.3 ohm-cm cells showed complete recovery from the 2 x 10 to the 14th power e/sq cm fluence; however, some of the 0.3 ohm-cm cells did not recover completely from the higher influences. From an analysis of the results it is concluded that burst annealing of moderate to high resistivity silicon cell arrays in space is feasible and that with more complete understanding, even the potentially higher efficiency low resistivity cells may be usable in annealable arrays in space.

Day, A. C.↗

NASA NTRS1986

Quenched-in defects in flashlamp-annealed silicon

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Borenstein, J. T.↗

NASA NTRS1987

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Draper, Susan L.↗

NASA NTRS1988

Experiences with serial and parallel algorithms for channel routing using simulated annealing

Two algorithms for channel routing using simulated annealing are presented. Simulated annealing is an optimization methodology which allows the solution process to back up out of local minima that may be encountered by inappropriate selections. By properly controlling the annealing process, it is very likely that the optimal solution to an NP-complete problem such as channel routing may be found. The algorithm presented proposes very relaxed restrictions on the types of allowable transformations, including overlapping nets. By freeing that restriction and controlling overlap situations with an appropriate cost function, the algorithm becomes very flexible and can be applied to many extensions of channel routing. The selection of the transformation utilizes a number of heuristics, still retaining the pseudorandom nature of simulated annealing. The algorithm was implemented as a serial program for a workstation, and a parallel program designed for a hypercube computer. The details of the serial implementation are presented, including many of the heuristics used and some of the resulting solutions.

Brouwer, Randall Jay↗

NASA NTRS1987

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.↗