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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Twofold van Hove singularity and origin of charge order in topological kagome superconductor CsV 3 Sb 5

The layered vanadium antimonides AV 3 Sb 5 (A = K, Rb, Cs) are a recently discovered family of topological kagome metals that exhibit a range of strongly correlated electronic phases including charge order and superconductivity. However, it is not yet understood how the distinctive electronic structure of the kagome lattice is linked to the observed many-body phenomena. Here we combine angle-resolved photoemission spectroscopy and density functional theory to reveal multiple kagome-derived van Hove singularities (vHS) coexisting near the Fermi level of CsV 3 Sb 5 and analyse their contribution to electronic symmetry breaking. The vHS are characterized by two distinct sublattice flavours (p-type and m-type), which originate, respectively, from their pure and mixed sublattice characters. These twofold vHS flavours of the kagome lattice critically determine the pairing symmetry and unconventional ground states emerging in the AV 3 Sb 5 series. We establish that, among the multiple vHS in CsV 3 Sb 5 , the m-type vHS of the d xz /d yz kagome band and the p-type vHS of the d xy /d x2–y2 kagome band are located very close to the Fermi level, setting the stage for electronic symmetry breaking. The former band is characterized by pronounced Fermi surface nesting, while the latter exhibits a higher-order vHS. Furthermore, our work reveals the essential role of kagome-derived vHS for the collective phenomena realized in the AV 3 Sb 5 family.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Rugged bialkali photocathodes encapsulated with graphene and thin metal film

Protection of free-electron sources has been technically challenging due to lack of materials that transmit electrons while preventing corrosive gas molecules. Two-dimensional materials uniquely possess both of required properties. Here, we report three orders of magnitude increase in active pressure and factor of two enhancement in the lifetime of high quantum efficiency (QE) bialkali photocathodes (cesium potassium antimonide (CsK 2 Sb)) by encapsulating them in graphene and thin nickel (Ni) film. The photoelectrons were extracted through the graphene protection layer in a reflection mode, and we achieved QE of ~ 0.17% at ~ 3.4 eV, 1/e lifetime of 188 h with average current of 8.6 nA under continuous illumination, and no decrease of QE at the pressure of as high as ~ 1 × 10 –3 Pa. In comparison, the QE decreased drastically at 10 –6 Pa for bare, non-protected CsK 2 Sb photocathodes and their 1/e lifetime under continuous illumination was ~ 48 h. We attributed the improvements to the gas impermeability and photoelectron transparency of graphene.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Graphene as reusable substrate for bialkali photocathodes

Bialkali photocathodes, such as cesium potassium antimonide (CsK 2 Sb), can generate a high-brightness electron beam using a high-power green laser. These photocathode materials have potential applications in advanced accelerators and electron microscopes. It is known that the quantum efficiency (QE) of these photocathodes is affected severely by their substrates; however, reusability of the substrates is not well known. Here, we use graphene, silicon (Si), and molybdenum (Mo) substrates to evaluate the effects of substrates on the QE of redeposited CsK 2 Sb photocathodes after thermal cleanings. We found the QE of CsK 2 Sb photocathodes redeposited on a graphene substrate after a thermal cleaning at 500 °C remained largely unchanged. On the other hand, the QE of redeposited photocathodes on Si and Mo substrates after thermal cleaning at the same temperature decreased drastically. We used X-ray photoelectron spectroscopy (XPS) to quantitatively evaluate the residues of photocathodes after thermal cleaning at 400 °C and 500 °C. We found that the Sb, K, and Cs are removed by thermal cleaning at 500 °C for the graphene substrate, but all or the majority of these elements remained on the Si and Mo substrates. The results were consistent with our density functional theory (DFT) calculations for the case of Si, which we investigated. Furthermore, our angle-resolved photoemission spectroscopy (ARPES) on graphene indicated that its intrinsic electronic structure is preserved after photocathode deposition and thermal cleaning at 500 °C. Hence, we attributed the difference in amount of photocathode residue to the unique dangling-bond- free surface of inert graphene. Our results provide a foundation for graphene-based reusable substrates for high-QE semiconductor photocathodes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Near-field photonic thermal diode based on hBN and InSb films

A thermal diode is a two-terminal device that allows heat to transfer more easily in one direction (forward bias) than in the opposite direction (reverse bias). A photonic thermal diode operates in a contactless mode and may afford a large operating temperature range. Here, a near-field photonic thermal diode based on hexagonal boron nitride (hBN) and indium antimonide (InSb) films is theoretically demonstrated. In this work, the temperature dependence of the interband absorption of InSb is used to couple (or decouple) with the hyperbolic phonon polaritons in hBN. The numerical analysis predicts a rectification ratio greater than 17 for a 10 nm vacuum gap, when operating at an average temperature of 300 K and a temperature difference of 200 K. The calculated rectification ratio exceeds 35 at higher average temperatures with larger temperature differences.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Continuous wave room temperature operation of the 2 $μ$m GaSb-based photonic crystal surface emitting diode lasers

Continuous wave room temperature operation of 2 μm GaSb-based photonic-crystal surface-emitting diode lasers has been realized. The deep etched square mesa devices showed threshold current densities of 500 A/cm 2 at 20 °C. The epi-side down mounted lasers generated above 10 mW of output power in the continuous wave regime and tens of milliwatts in pulses from the 200 × 200 μm 2 aperture. Here, the breakthrough in the device performance parameters was achieved thanks to a highly homogeneous air-pocket retaining epitaxial regrowth process optimized for a specifically designed antimonide diode laser heterostructure. The nanofabrication method utilizing low temperature atomic hydrogen surface cleaning yielded low disorder square lattice of droplet-shaped voids covered by uniform p-cladding layer. The laser emission spectrum as well as near/far field patterns demonstrated peculiar features presumably linked to deformation of the void shape during regrowth and formation of the array of filaments.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Interband cascade light-emitting diodes grown on silicon substrates using GaSb buffer layer

Interband cascade light-emitting diodes (ICLEDs) offer attractive advantages for infrared applications, which would greatly expand if high-quality growth on silicon substrates could be achieved. Here, this work describes the formation of threading dislocations in ICLEDs grown monolithically on GaSb-on-Silicon wafers. The epitaxial growth is done in two stages: the GaSb-on-Silicon buffer is grown first, followed by the ICLED growth. The buffer growth involves the nucleation of a 10-nm-thick AlSb buffer layer on the silicon surface, followed by the GaSb growth. The AlSb nucleation layer promotes the formation of 90° and 60° interfacial misfit dislocations, resulting in a highly planar morphology for subsequent GaSb growth that is almost 100% relaxed. The resulting GaSb buffer for growth of the ICLED has a threading dislocation density of ~10 7 /cm 2 after ~3 μm of growth. The fabricated LEDs showed variations in device performance, with some devices demonstrating comparable light–current–voltage curves to those for devices grown on GaSb substrates, while other devices showed somewhat reduced relative performance. Cross-sectional transmission electron microscopy observations of the inferior diodes indicated that the multiplication of threading dislocations in the active region had most likely caused the increased leakage current and lower output power. Enhanced defect filter layers on the GaSb/Si substrates should provide more consistent diode performance and a viable future growth approach for antimonide-based ICLEDs and other infrared devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

The Zintl pnictides Yb10CdSb9 and Yb14CdSb11: New candidate thermoelectric materials

The synthesis of new materials is the lifeline of solid-state science, and it continues to offer us unique opportunities for testing various theoretical formulations and models on a practical material. Such an avenue, therefore, provides a breeding ground for technological innovations and advancements that can completely revolutionize our world. Here, we report the results of our exploratory syntheses in the Yb–Cd–Sb compositional space that lead to the identification of two new Zintl antimonides, namely, Yb10CdSb9 and Yb14CdSb11. Their crystal structures were established via single-crystal X-ray diffraction methods; the basic electronic and transport properties of the new materials were also characterized. Yb10CdSb9 crystallizes in a disordered variant of the tetragonal Ca10LiMgSb9 structure type with unit cell parameters a = 11.8473(8) Å and c = 17.1302(12) Å (space group P42/mnm). Yb14CdSb11 crystallizes in the tetragonal Ca14AlSb11 structure type with unit cell parameters: a = 16.605(3) Å and c = 12.144(7) Å (space group I41/acd). Although the structures of both compounds can be rationalized within the framework of the Zintl formalism, based on the partitioning of the valence electrons in the much disordered Yb10CdSb9 phase, the charge is indicative of a slightly electron-rich composition. Electronic structure calculations in both cases support the notion of intrinsic semiconductor behavior, as expected for a Zintl phase. The temperature dependence of the electrical resistivity of a single crystal of Yb10CdSb9 is in line with that, and the evolution of the Seebeck coefficient indicates an electron-dominated transport mechanism, and a respectable power factor of 0.71 μW/cm K2 at 460 K can be calculated for Yb10CdSb9. The electrical resistivity of Yb14CdSb11, however, evolves in a semimetallic manner, which could suggest an overdoped sample or degenerate semiconducting behavior.

Ogunbunmi, Michael O. (ORCID:0000000253409198)↗
DOE OSTI2024

Spectroscopic evidence of spin-state excitation in d-electron correlated semiconductor FeSb 2

Iron antimonide (FeSb 2 ) has been investigated for decades due to its puzzling electronic properties. It undergoes the temperature-controlled transition from an insulator to an ill-defined metal, with a cross-over from diamagnetism to paramagnetism. Extensive efforts have been made to uncover the underlying mechanism, but a consensus has yet to be reached. While macroscopic transport and magnetic measurements can be explained by different theoretical proposals, the essential spectroscopic evidence required to distinguish the physical origin is missing. In this paper, through the use of X-ray absorption spectroscopy and atomic multiplet simulations, we have observed the mixed spin states of 3d 6 configuration in FeSb 2 . Furthermore, we reveal that the enhancement of the conductivity, whether induced by temperature or doping, is characterized by populating the high-spin state from the low-spin state. Our work constitutes vital spectroscopic evidence that the electrical/magnetical transition in FeSb 2 is directly associated with the spin-state excitation.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2026

First use of an InSb crystal for x-ray imaging spectroscopy of highly ionized tungsten in the Wendelstein 7-X stellarator

Advances in time and space resolved measurements of highly charged states of tungsten (W) through x-ray imaging spectroscopy have enabled investigation of impurity transport in the Wendelstein 7-X (W7-X) stellarator. The high-resolution x-ray imaging spectrometer (HR-XIS) system on W7-X utilizes the Bragg diffraction properties of a set of multiple crystals to measure a range of impurity emission lines within sections of the 1–7 Å wavelength range, including transitions of W. A new indium–antimonide crystal has been installed on the HR-XIS system to allow viewing of the 5.5–6.2 Å region focusing on emissions of W. Consequently, many bright W emission lines from W 40+ to W 47+ were observed in this wavelength range, both in plasmas with injected W and in those with only intrinsic W impurity sources, showing the high sensitivity of the diagnostic. Three W 46+ emissions correspond in wavelength and intensity with calculated photon emissivity coefficients and can be exploited for W transport and concentration applications in plasmas with T e ≳ 2.1 keV. Here, an estimate of the core W density behavior in two separate turbulence-reduced ‘high-performance’ (HP) discharges on W7-X is done using the 5.6893 Å W 46+ line. The n W behavior in HP scenarios can be explained by previous experimental results and neoclassical predictions.

XICS↗
DOE OSTI2024

Photoelectron spectroscopy of CsK2Sb photocathode at Synchrotron Radiation Facility using vacuum transport system

As accelerators and electron microscopes become more advanced, high-performance photocathodes are required. In particular, Cesium potassium antimonide (CsK 2 Sb) photocathode is of interest because of its low emittance, excitability in visible light, and high quantum efficiency (QE). The challenge is its high susceptibility to environment that lead to low operating vacuum pressure and short lifetime/low extraction charge. To resolve these issues, it is necessary to understand the molecular structure of the cathode and its degradation mechanism. In this study, we transported CsK 2 Sb photocathode to a beamline of synchrotron radiation facility using a vacuum transport system for molecular structure analysis. Specifically, the cathode was deposited in an evaporation system at Nagoya University. We transported it to Aichi Synchrotron Radiation Center (Aichi SR) located 15 km away, and analyzed it in the depth direction by X-ray photoelectron spectroscopy (XPS) at BL7U. Based on the results, we quantitatively evaluated the composition ratios and stoichiometry of the cathode elements (Sb, K, Cs). A Cs ex-cess state of surface was observed at the surface, and it is consistent with previous studies. The intended atomic structure of CsK 2 Sb was formed only at a few nanometres of the surface on the Mo substrate. On the other hand, the CsK 2 Sb cathode structure on the graphene substrate was preserved further in the depth direction.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Isolated spin ladders in 𝐿⁢𝑛 2 ⁢Ti 9 ⁢Sb 11 (𝐿⁢𝑛 :La–Nd) metals

Here we present the discovery and characterization of a series of antimonides 𝐿⁢𝑛 2 ⁢Ti 9⁢ Sb 11 (Ln: La–Nd) that exhibit well-isolated, 𝑛 = 2 rare-earth spin ladders. We discuss the structure of these compounds, with a particular focus on the magnetic Ln spin ladders. Nd 2 ⁢Ti 9 ⁢Sb 11 and Ce 2 ⁢Ti 9 ⁢Sb 11 exhibit antiferromagnetic interactions and a well-defined doublet ground state, whereas Pr 2 ⁡Ti 9⁢ Sb 11 exhibits a weakly magnetic singlet ground state. Nd 2 ⁢Ti 9 ⁢Sb 11 is a poor metal with an electrical resistivity of 0.1m⁢Ω cm at 300 K and weak temperature dependence. The thermal conductivity along the ladder exhibits significant field dependence even at 40 K, considerably higher than the magnetic ordering temperature of 1.1 K. Compared to compounds with transition metal spin ladders, the rare-earth elements impart much lower energy scales, making these compounds highly tunable with external stimuli like magnetic fields. In conclusion, the diverse magnetism of the rare-earth ions and Ruderman-Kittel-Kasuya-Yosida interactions further contribute to the potential for a wide array of rich magnetic ground states, positioning these materials as a rare example of an inorganic square spin-ladder platform.

Crystal growth↗
DOE OSTI2026

Band-gap reduction and band alignments of dilute bismide III–V alloys

Adding a few atomic percent of Bi to III–V semiconductors leads to significant changes in their electronic structure and optical properties. Bismuth substitution on the pnictogen site leads to a large increase in spin-orbit splitting Δ SO at the top of the valence band (Γ 8⁢𝑣 −Γ 7⁢𝑣 ) and a large reduction in the band gap, creating unique opportunities in semiconductor device applications. Quantifying these changes is key to the design and simulation of electronic and optoelectronic devices. Using hybrid functional calculations, we predict the band gap of III–Vs (III = Al, Ga, In and V = As, Sb) with low concentrations of Bi (3.125% and 6.25%), the effects of adding Bi on the valence- and conduction-band edges, and the band offset between these dilute alloys and their III–V parent compounds. As expected, adding Bi raises the valence-band maximum (VBM). However, contrary to previous assumptions, the conduction-band minimum (CBM) is also significantly lowered, and both effects contribute to the sizable band-gap reduction. Changes in band gap and Δ SO are notably larger in the arsenides than in the antimonides. In conclusion, we also predict cases of band-gap inversion (Γ 6⁢𝑐 below Γ 8⁢𝑣 ), and Δ SO larger than the band gap, which are key parameters for designing topological materials and for minimizing losses due to Auger recombination in infrared lasers.

Saboor, Abdul [Univ. of Delaware, Newark, DE (Unit↗
DOE OSTI2024

Development of “GaSb-on-silicon” metamorphic substrates for optoelectronic device growth

The epitaxial development and characterization of metamorphic “GaSb-on-silicon” buffers as substrates for antimonide devices is presented. The approach involves the growth of a spontaneously and fully relaxed GaSb metamorphic buffer in a primary epitaxial reactor, and use of the resulting “GaSb-on-silicon” wafer to grow subsequent layers in a secondary epitaxial reactor. The buffer growth involves four steps—silicon substrate preparation for oxide removal, nucleation of AlSb on silicon, growth of the GaSb buffer, and finally capping of the buffer to prevent oxidation. This approach on miscut silicon substrates leads to a buffer with negligible antiphase domain density. The growth of this buffer is based on inducing interfacial misfit dislocations between an AlSb nucleation layer and the underlying silicon substrate, which results in a fully relaxed GaSb buffer. A 1 μm thick GaSb layer buffer grown on silicon has ~9.2 × 10 7 dislocations/cm 2 . The complete lack of strain in the epitaxial structure allows subsequent growths to be accurately lattice matched, thus making the approach ideal for use as a substrate. Here we characterize the GaSb-on-silicon wafer using high-resolution x-ray diffraction and transmission electron microscopy. The concept’s feasibility is demonstrated by growing interband cascade light emitting devices on the GaSb-on-silicon wafer. The performance of the resulting LEDs on silicon approaches that of counterparts grown lattice matched on GaSb.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Neural-adjoint method for the inverse design of all-dielectric metasurfaces

All-dielectric metasurfaces exhibit exotic electromagnetic responses, similar to those obtained with metal-based metamaterials. Research in all-dielectric metasurfaces currently uses relatively simple unit-cell designs, but increased geometrical complexity may yield even greater scattering states. Although machine learning has recently been applied to the design of metasurfaces with impressive results, the much more challenging task of finding a geometry that yields a desired spectra remains largely unsolved. We propose and demonstrate a method capable of finding accurate solutions to ill-posed inverse problems, where the conditions of existence and uniqueness are violated. A specific example of finding the metasurface geometry which yields a radiant exitance matching the external quantum efficiency of gallium antimonide is demonstrated. We also show how the neural-adjoint method can intelligently grow the design search space to include designs that increasingly and accurately approximate the desired scattering response. The neural-adjoint method is not restricted to the case demonstrated and may be applied to plasmonics, photonic crystal, and other artificial electromagnetic materials.

42 ENGINEERING↗
DOE OSTI2021

AlSb as a material for high index contrast nanophotonics

High contrast materials, i.e., materials with a high refractive index and low optical loss, are of wide interest for nanophotonics and metasurface designs at optical and near infrared wavelengths. We explore aluminum antimonide (AlSb) as a high contrast nanophotonic material, using the design of high contrast gratings (HCGs) for low loss dielectric mirrors as an example. The high index of refraction and low absorption coefficient of AlSb in the visible wavelength range enable designs of HCGs that can be effectively optimized to form mirrors with 93.5% reflectivity at red visible wavelengths. We detail a co-sputtering synthesis method for AlSb films, and achieve our target high index of refraction of 3.5 for 635 nm light. We also find that the high sensitivity of AlSb oxidation requires specific handling procedures in developing deposition processes to yield a near zero absorption coefficient.

Bauser, Haley C.↗
DOE OSTI2020

Materials Data on Y2AgSb3 by Materials Project

(YSb)2AgSb crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one antimony molecule, one silver molecule, and two yttrium(iii) antimonide molecules.

36 MATERIALS SCIENCE↗
DOE OSTI2021

SPACE CHARGE EFFECT IN LOW ENERGY MAGNETIZED ELECTRON BEAM

Magnetized electron cooling is one of the major approaches towards obtaining the required high luminosity in the proposed Electron-Ion Collider (EIC). In order to increase the cooling efficiency, a bunched electron beam with a high bunch charge and high repetition rate is required. At Jefferson Lab, we generated magnetized electron beams with high bunch charge using a new compact DC high voltage photogun biased at -300 kV with bialkali-antimonide photocathode and a commercial ultra-fast laser. This contribution discusses how magnetization affects space charge dominated beams as a function of magnetic field strength, gun high voltage, and laser pulse width, and spot size in comparison with simulations performed using General Particle Tracer.

Wijethunga, S.A.K.↗
DOE OSTI2021

Novel In-situ Patterning Technique to Fabricate Single Quantum Dots for Quantum Photonics

Photon sources able to emit single or entangled photon pairs are key components in quantum information systems. Semiconductor quantum dots (QDs) are promising candidates due to their high efficiencies and ease of integration with other photonic or electronic components. State-of-the-art QDs, however, are limited to certain emission wavelengths and specific applications due to material choice constraints and their randomness in shape/size. This project is focused on developing a novel in-situ patterning technique to realize QDs with a broad emission range, shape/size control and the ability to emit single/entangled photons. Our approach has two key elements: (1) In-situ patterning via arsenic-induced nanovoid etching on antimonide surfaces and (2) In-filling of nanovoids to form QDs. By closely controlling the experimental conditions, it is shown that this technique can be used to realize III-V QDs in As 2 - etched nanovoids on a GaSb surface. The exposure to As 2 in terms of substrate temperature, time and flux is found to have a significant impact on the process variables such as nanovoid depth, QD dimensions etc. An in-depth analysis of the etch mechanism reveals that by controlling the As 2 exposure, uniform 3-dimensional nanostructures with varying areal densities can be obtained without an in-filling step. Preliminary optical characterization of these nanostructures shows that these QDs may be relevant for realizing emitters in the telecom wavelength range.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗