Nanoscale Pattern Decay Monitored Line by Line via In Situ Heated Atomic Force Microscopy
Not provided.
Materials Science↗
SEARCH · Search NASA
Results for “atomic patterning”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Atomistic insights into the nucleation and growth of platinum on palladium nanocrystals
Abstract Despite the large number of reports on colloidal nanocrystals, very little is known about the mechanistic details in terms of nucleation and growth at the atomistic level. Taking bimetallic core-shell nanocrystals as an example, here we integrate in situ liquid-cell transmission electron microscopy with first-principles calculations to shed light on the atomistic details involved in the nucleation and growth of Pt on Pd cubic seeds. We elucidate the roles played by key synthesis parameters, including capping agent and precursor concentration, in controlling the nucleation site, diffusion path, and growth pattern of the Pt atoms. When the faces of a cubic seed are capped by Br − , Pt atoms preferentially nucleate from corners and then diffuse to edges and faces for the creation of a uniform shell. The diffusion does not occur until the Pt deposited at the corner has reached a threshold thickness. At a high concentration of the precursor, self-nucleation takes place and the Pt clusters then randomly attach to the surface of a seed for the formation of a non-uniform shell. These atomistic insights offer a general guideline for the rational synthesis of nanocrystals with diverse compositions, structures, shapes, and related properties.
36 MATERIALS SCIENCE↗
Revealing quantum effects in highly conductive δ-layer systems
Abstract Thin, high-density layers of dopants in semiconductors, known as δ -layer systems, have recently attracted attention as a platform for exploration of the future quantum and classical computing when patterned in plane with atomic precision. However, there are many aspects of the conductive properties of these systems that are still unknown. Here we present an open-system quantum transport treatment to investigate the local density of electron states and the conductive properties of the δ -layer systems. A successful application of this treatment to phosphorous δ -layer in silicon both explains the origin of recently-observed shallow sub-bands and reproduces the sheet resistance values measured by different experimental groups. Further analysis reveals two main quantum-mechanical effects: 1) the existence of spatially distinct layers of free electrons with different average energies; 2) significant dependence of sheet resistance on the δ -layer thickness for a fixed sheet charge density.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Dynamics of Density Fluctuations in Atomic Nuclei
We study the spatiotemporal patterns of density fluctuations in 16,24O and 48Ca using nuclear interactions from chiral effective field theory and the time-dependent coupled-cluster method. We find that two-particle–two-hole excitations generate small-amplitude fluctuations that are fast, short-ranged, and of stochastic character.
Bonaiti, Francesca [ORNL] (ORCID:0000000239261609)↗
Atomic-scale control of tunneling in donor-based devices
Atomically precise donor-based quantum devices are a promising candidate for solid-state quantum computing and analog quantum simulations. However, critical challenges in atomically precise fabrication have meant systematic, atomic scale control of the tunneling rates and tunnel coupling has not been demonstrated. Here using a room temperature grown locking layer and precise control over the entire fabrication process, we reduce unintentional dopant movement while achieving high quality epitaxy in scanning tunnelling microscope (STM)-patterned devices. Using the Si(100)2 × 1 surface reconstruction as an atomically-precise ruler to characterize the tunnel gap in precision-patterned single electron transistors, we demonstrate the exponential scaling of the tunneling resistance on the tunnel gap as it is varied from 7 dimer rows to 16 dimer rows. We demonstrate the capability to reproducibly pattern devices with atomic precision and a donor-based fabrication process where atomic scale changes in the patterned tunnel gap result in the expected changes in the tunneling rates.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Tuning Surface Adhesion Using Grayscale Electron-beam Lithography
Surface texturing of manufactured products tailors their properties, such as friction, adhesion, biocompatibility, or fluid interactions. However, advancements in this area are largely the result of trial-and-effort testing and generally lack a science-guided framework for determining the surface topography that will optimize performance. The present investigation explores grayscale electron-beam lithography as a means to create multiscale surface patterns to control surface performance. Here, we created and characterized a set of surface textures on a silicon wafer; the textures were superpositions of sine waves of varying wavelengths and amplitudes. First, the multiscale topography of the patterned surface was characterized, using profilometry and atomic force microscopy, to understand its fidelity to the designed-in pattern. The results of this analysis demonstrated how grayscale lithography accurately controlled the lateral size of features but was less precise on the vertical height of the surface, and also introduced inherent roughness below the scale of patterning. Second, a micromechanical tester was used to characterize the adhesion of the surfaces with large-scale polished silicon spheres. The results showed that adhesion could be tailored, with significant contribution from all of the designed-in length scales of topography. The strength of adhesion did not correlate with conventional roughness parameters but could be accurately modeled using simple numerical integration. Taken together, this investigation demonstrates the promise and challenges of grayscale e-beam lithography with multiscale patterns as a method for the tailoring of surface performance.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Epitaxial growth of monolayer PdTe 2 and patterned PtTe 2 by direct tellurization of Pd and Pt surfaces
Two-dimensional (2D) palladium ditelluride (PdTe 2 ) and platinum ditelluride (PtTe 2 ) are two Dirac semimetals, which have fascinating quantum properties such as superconductivity, magnetism and topological order and show the promising applications in future nanoelectronics and optoelectronics. However, the synthesis of PdTe 2 and PtTe 2 monolayers (MLs) is hindered by a strong interlayer coupling and orbital hybridization. Here, in this study, we demonstrate an efficient synthesis of PdTe 2 and PtTe 2 MLs Large-area and high quality MLs of PdTe 2 and patterned PtTe 2 were epitaxially grown on the Pd(111) and Pt(111) surfaces by direct telurization in ultra-high vacuum. This was confirmed by x-ray photoelectron spectroscopy, low energy electron diffraction and scanning tunnelling microscopy. PdTe 2 ML demonstrated high thermal stability showing no decomposition sign after annealing at 470 °C. A well-ordered (2 × 2) PtTe 2 structure with Kagome lattice was observed on Te/Pt(111) surface following annealing at 200 °C in UHV, where the (2 × 2) pattern was formed by Te atom vacancies. PtTe 2 multilayer film was prepared as well, and it demonstrated the excitation of the Dirac plasmons as measured by high-resolution electron energy loss spectroscopy. The direct tellurization offers the simple and reliable protocol for the preparation of the ML of PdTe 2 and patterned PtTe 2 , and this opens new opportunities for quantum phenomena research and for practical optoelectronics applications.
2D materials↗
Quantifying the Dynamics of Protein Self-Organization Using Deep Learning Analysis of Atomic Force Microscopy Data
The dynamics of protein self-assembly on the inorganic surface and the resultant geometric patterns are visualized using high-speed atomic force microscopy. The time dynamics of the classical macroscopic descriptors such as 2D fast Fourier transforms, correlation, and pair distribution functions are explored using the unsupervised linear unmixing, demonstrating the presence of static ordered and dynamic disordered phases and establishing their time dynamics. Here, the deep learning (DL)-based workflow is developed to analyze detailed particle dynamics and explore the evolution of local geometries. Finally, we use a combination of DL feature extraction and mixture modeling to define particle neighborhoods free of physics constraints, allowing for a separation of possible classes of particle behavior and identification of the associated transitions. Overall, this work establishes the workflow for the analysis of the self-organization processes in complex systems from observational data and provides insight into the fundamental mechanisms.
36 MATERIALS SCIENCE↗
Machine learning approach to pattern recognition in nuclear dynamics from the ab initio symmetry-adapted no-core shell model
A novel machine learning approach is used to provide further insight into atomic nuclei and to detect orderly patterns amid a vast data of large-scale calculations. The method utilizes a neural network that is trained on ab initio results from the symmetry-adapted no-core shell model (SA-NCSM) for light nuclei. We show that the SA-NCSM, which expands ab initio applications up to medium-mass nuclei by using dominant symmetries of nuclear dynamics, can reach heavier nuclei when coupled with the machine learning approach. In particular, we find that a neural network trained on probability amplitudes for s- and p-shell nuclear wave functions not only predicts dominant configurations for heavier nuclei but in addition, when tested for the 20 Ne ground state, accurately reproduces the probability distribution. The non-negligible configurations predicted by the network provide an important input to the SA-NCSM for reducing ultralarge model spaces to manageable sizes that can be, in turn, utilized in SA-NCSM calculations to obtain accurate observables. The neural network is capable of describing nuclear deformation and is used to track the shape evolution along the 20-42 Mg isotopic chain, suggesting a shape coexistence that is more pronounced toward the very neutron-rich isotopes. We provide first descriptions of the structure and deformation of 24 Si and 40 Mg of interest to x-ray burst nucleosynthesis, and even of the extremely heavy nuclei such as 166,168 Er and 236 U, that build on first-principles considerations.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Observation of attosecond electron dynamics in the photoelectron momentum distribution of atoms using few-cycle laser pulses
The method of time-resolved measurement with ultrashort laser pulses is vital to the development of attosecond science. Pump-probe measurements using a train of attosecond pulses in combination with a near-infrared (NIR) multicycle driving laser have been successful in capturing the intercycle electron dynamics which repeats every optical cycle and leads to above-threshold ionization (ATI) spectra in the frequency domain. Here in this work, we study the effect of a carrier-envelope phase (CEP) in a few-cycle (< 6 fs) NIR laser pulse on the photoelectron momentum distribution (PMD) of a hydrogen atom and show that interference patterns in a PMD change dramatically with CEPs in the few-cycle regime. When the few-cycle driving laser pulse has a sine shape, the double-slit interference with characteristic modulation of ATI peaks dominates the PMD. On the other hand, when the driving pulse has a cosine shape, the holographical interference featured by a spider-like pattern is isolated. Our results suggest that the CEP-stable few-cycle laser pulses can be used to identify different types of intracycle interference structures in a PMD which reveal the underlying subcycle electron dynamics on an attosecond timescale.
74 ATOMIC AND MOLECULAR PHYSICS↗
Atomically engineered cobaltite layers for robust ferromagnetism
Emergent phenomena at heterointerfaces are directly associated with the bonding geometry of adjacent layers. Effective control of accessible parameters, such as the bond length and bonding angles, offers an elegant method to tailor competing energies of the electronic and magnetic ground states. In this study, we construct unit-thick syntactic layers of cobaltites within a strongly tilted octahedral matrix via atomically precise synthesis. The octahedral tilt patterns of adjacent layers propagate into cobaltites, leading to a continuation of octahedral tilting while maintaining substantial misfit tensile strain. These effects induce severe rumpling within an atomic plane of neighboring layers, further triggering the electronic reconstruction between the splitting orbitals. First-principles calculations reveal that the cobalt ions transit to a higher spin state level upon octahedral tilting, resulting in robust ferromagnetism in ultrathin cobaltites. This work demonstrates a design methodology for fine-tuning the lattice and spin degrees of freedom in correlated quantum heterostructures by exploiting epitaxial geometric engineering.
36 MATERIALS SCIENCE↗
Electron interference in atomic ionization by two crossing polarized ultrashort pulses
Formation of geometrically regular interference patterns in the photoelectron momentum distributions (PMDs) corresponding to the photoionization of atoms by two single-color, crossing ultrashort pulses is investigated both analytically and numerically. It is shown that, in contrast to the photoionization by monochromatic pulses, PMDs for the ionization by crossing and co-propagating broadband pulses are essentially different (unless both pulses are linearly polarized), namely, when one pulse is linearly polarized along the propagation direction, ˆk, of the circularly polarized (CP) pulse, then interference maxima (minima) of the ionization probability have the form of three-dimensional single-arm regular spirals which are wound along ˆk. Next, the interference maxima (minima) of the ionization probability by a pair of crossing elliptically polarized pulses have the form of either Newton's rings or two-arm Fermat's spirals, depending on the position of a detection plane. Remarkably, these regular patterns occur only for certain values of the pulse ellipticities, and they become distorted for CP pulses. For both above-mentioned pulse configurations, the features of interference patterns depend on the time delay between pulses, their relative electric field amplitude, and relative carrier-envelope phase. Our predictions, illustrated by the numerical results for the ionization of H and He atoms by two orthogonal pulses, are quite general and we expect them to be valid for the ionization of any randomly oriented atomic or molecular target.
74 ATOMIC AND MOLECULAR PHYSICS↗
Grafted polythiophene pendent polymer brushes and their electronanopatterning
Here electrochemical nanolithography using grafted polymer brushes with terthiophene (3T) pendent was investigated. The film was fabricated by surface electropolymerization of a reversible addition-fragmentation chain-transfer agent macroinitiator containing a 3T pendant molecule and the subsequent polymer brush growth from a 3T functionalized methacrylate monomer (3T-Methacrylate). Electrochemical nanolithography and patterning were done using conducting atomic force microscopy (C-AFM) enabling precise nanopattern fabrication. In contrast to direct nanowriting, dip pen nanolithography, and nanolithographic additive manufacturing, the electrochemical nanolithography can be readily facilitated by applying a bias voltage between a conductive AFM tip and the grafted polymer brush film at ambient conditions and without ink transfer. The height and electrical resistance of the nanopatterns were dependent on the writing parameters (i.e. applied bias voltage and scan rate).
36 MATERIALS SCIENCE↗
Porphene and porphite as porphyrin analogs of graphene and graphite
Two-dimensional materials have unusual properties and promise applications in nanoelectronics, spintronics, photonics, (electro)catalysis, separations, and elsewhere. Most are inorganic and their properties are difficult to tune. Here we report the preparation of Zn porphene, a member of the previously only hypothetical organic metalloporphene family. Similar to graphene, these also are fully conjugated two-dimensional polymers, but are composed of fused metalloporphyrin rings. Zn porphene is synthesized on water surface by two-dimensional oxidative polymerization of a Langmuir layer of Zn porphyrin with K 2 IrCl 6 , reminiscent of known one-dimensional polymerization of pyrroles. It is transferable to other substrates and bridges μm-sized pits. Contrary to previous theoretical predictions of metallic conductivity, it is a p-type semiconductor due to a predicted Peierls distortion of its unit cell from square to rectangular, analogous to the appearance of bond-length alternation in antiaromatic molecules. The observed reversible insertion of various metal ions, possibly carrying a fifth or sixth ligand, promises tunability and even patterning of circuits on an atomic canvas without removing any π centers from conjugation.
36 MATERIALS SCIENCE↗
Interplay of hidden orbital order and superconductivity in CeCoIn5
Abstract Visualizing atomic-orbital degrees of freedom is a frontier challenge in scanned microscopy. Some types of orbital order are virtually imperceptible to normal scattering techniques because they do not reduce the overall crystal lattice symmetry. A good example is d xz / d yz (π,π) orbital order in tetragonal lattices. For enhanced detectability, here we consider the quasiparticle scattering interference (QPI) signature of such (π,π) orbital order in both normal and superconducting phases. The theory reveals that sublattice-specific QPI signatures generated by the orbital order should emerge strongly in the superconducting phase. Sublattice-resolved QPI visualization in superconducting CeCoIn 5 then reveals two orthogonal QPI patterns at lattice-substitutional impurity atoms. We analyze the energy dependence of these two orthogonal QPI patterns and find the intensity peaked near E = 0, as predicted when such (π,π) orbital order is intertwined with d -wave superconductivity. Sublattice-resolved superconductive QPI techniques thus represent a new approach for study of hidden orbital order.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Programming twist angle and strain profiles in 2D materials
Moiré superlattices in twisted two-dimensional materials have generated tremendous excitement as a platform for achieving quantum properties on demand. However, the moiré pattern is highly sensitive to the interlayer atomic registry, and current assembly techniques suffer from imprecise control of the average twist angle, spatial inhomogeneity in the local twist angle, and distortions caused by random strain. We manipulated the moiré patterns in hetero- and homobilayers through in-plane bending of monolayer ribbons, using the tip of an atomic force microscope. This technique achieves continuous variation of twist angles with improved twist-angle homogeneity and reduced random strain, resulting in moiré patterns with tunable wavelength and ultralow disorder. Our results may enable detailed studies of ultralow-disorder moiré systems and the realization of precise strain-engineered devices.
Science & Technology - Other Topics↗
Nanoscale Turing patterns in a bismuth monolayer
Turing’s reaction–diffusion theory of morphogenesis has been very successful for understanding macroscopic patterns within complex objects ranging from biological systems to sand dunes. However, Turing patterns on microscopic length scales are extremely rare. Here we show that a strained atomic bismuth monolayer assembled on the surface of NbSe 2 —and subject to interatomic interactions and kinetics—displays Turing patterns. Our reaction–diffusion model produces stripe patterns with a period of five atoms (approximately 2 nm) and domain walls with Y-shaped junctions that bear a striking resemblance to what has been experimentally observed. Our work establishes that Turing patterns can occur at the atomic scale in a hard condensed-matter setting.
36 MATERIALS SCIENCE↗
Atomic resolution convergent beam electron diffraction analysis using convolutional neural networks
Two types of convolutional neural network (CNN) models, a discrete classification network and a continuous regression network, were trained to determine local sample thickness from convergent beam diffraction (CBED) patterns of SrTiO 3 collected in a scanning transmission electron microscope (STEM) at atomic column resolution. Acquisition of atomic resolution CBED patterns for this purpose requires careful balancing of CBED feature size in pixels, acquisition speed, and detector dynamic range. The training datasets were derived from multislice simulations, which must be convolved with incoherent source broadening. Sample thicknesses were also determined using quantitative high-angle annular dark-field (HAADF) STEM images acquired simultaneously. The regression CNN performed well on sample thinner than 35 nm, with 70% of the CNN results within 1 nm of HAADF thickness, and 1.0 nm overall root mean square error between the two measurements. The classification CNN was trained for a thicknesses up to 100 nm and yielded 66% of CNN results within one classification increment of 2 nm of HAADF thickness. Our approach depends on methods from computer vision including transfer learning and image augmentation.
36 MATERIALS SCIENCE↗