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All sourcesNASA NTRSDOE OSTI
NASA NTRS2021

Probabilistic Processing of Asynchronous Geiger-Mode Avalanche Photodiode Arrays for Background Rate Measurements

A system-level performance evaluation of Geiger-mode avalanche photodiode (GmAPD) arrays requires accurate measurement and prediction of the background rate of the device due to dark counts and other spurious detection events. Since a GmAPD detector reports only a binary value and timestamp associated with an avalanche event, dark count rates are typically measured by averaging thousands of frames to support a statistically significant measurement. For both synchronous and asynchronous detector, the Poisson distributed background rates are referenced to the time each pixel is armed. Unlike for synchronous GmAPD imagers where all the pixels are armed to an array-wide arm signal, an asynchronous pixel operates independently from its neighboring pixels; requiring the background rates to be calculated using an interarrival histogram. For both types of imagers, the background rate is typically evaluated by fitting an exponential distribution to a fixed window within a measured histogram of time intervals between detection events However, if the statistics of the background rate are insufficient – whether that is due to low population sizes, saturation, or a large dynamic range of population size across the array, the pixel, or array-wide, performance metrics may report results with varying accuracy. This paper reports on an implementation of an algorithm that evaluates GmAPD background rates based on statistical metrics rather than fixed windows. The algorithm functions by determining the appropriate integration window within the interarrival time histogram based on a per-pixel count rate set by a predetermined tolerable measurement error. The implementation of the algorithm allows us to characterize GmAPD arrays with orders of magnitude spread in background rates across the detector using common statistical parameters.

Mumolo, J.↗
NASA NTRS2018

MCT Avalanche Photodiode Detector for Two-Micron Active Remote Sensing Applications

Mercury Cadmium Telluride electron initiated avalanche photodiodes demonstrated a breakthrough in lidar active remote sensing technology. A lidar detection system, based on an array of these devices, was integrated and characterized for 2-μm applications. Characterization experiments were focused on evaluating the dark current, gain and responsivity variations with bias voltage. Quantum efficiency and input dynamic range including noise-equivalent-power and maximum detectable power, were calculated from these results. Operating the detection system using four pixels at 77.6 K, 12 V bias resulted in a current responsivity of 615.8 A/W and a voltage responsivity of 1.45 GV/W. Minimum detectable power of 14 pW was obtained, which is equivalent to 5.7 fW/Hz(exp 1/2) noise-equivalent-power, indicating an average noise-equivalent-power of 1.4 fW/Hz(exp 1/2) per pixel. Work is in progress to integrate and validate this detection system using a newly developed triple-pulse integrated path differential absorption lidar for simultaneous and independent atmospheric measurements of water vapor and carbon dioxide.

Refaat, Tamer F.↗
NASA NTRS2018

Single Photon HgCdTe Avalanche Photodiode and Integrated Detector Cooler Assemblies for Space Lidar Applications

A linear mode photon counting HgCdTe avalanche photodiode (APD) focal plane array (FPA) detector was developed for space lidar applications. An integrated detector cooler assembly (IDCA) was manufactured using a miniature Stirling cooler. The HgCdTe APD demonstrated a greater than 60% photon detection efficiency from 0.9 to 4.3 μm wavelength and a dark count rate less than 250,000/s. The IDCA cooled the FPA to 110K from ambient room temperature at a total electrical power of 7 W. The IDCA has passed environmental tests, including vibration, thermal cycling and thermal vacuum tests.

Sun, Xiaoli↗
NASA NTRS2017

HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

Sun, Xiaoli↗
NASA NTRS2020

Proton Radiation Effects on HgCdTe Avalanche Photodiode Detectors

Space radiation damage and proton induced transient effects were evaluated on 4.4 μm cutoff HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS. Device performances as a function of total dose up to 100 krad (Si) were measured with ~60 MeV protons on 3 types of APD samples: 4x4 pixel APD fanout arrays with and without connection to a read-out integrated circuit (ROIC), and a 2x8 pixel photon counting APD focal plane array (FPA). A gamma-ray test was also conducted to study ionization effects. Both APD arrays exhibited a small decrease in the quantum efficiency and a linear increase in the dark current with the proton fluence. The 2x8 pixel photon counting FPA also exhibited an increase in the dark count rate with proton dose. After the proton irradiation and an overnight room temperature warm-up, the APD dark currents at 80 K increased significantly in both types of APD arrays. All radiation damage to these HgCdTe APD arrays annealed out after baking them at >85 °C for several hours. Transient protons through the devices were found to cause large pulses at the detector output but recover within 1 μs.

Xiaoli Sun↗
NASA NTRS2018

Evaluation of Space Radiation Effects on HgCdTe Avalanche Photodiode Arrays for Lidar Applications

We report the results from proton and gamma ray radiation testing of HgCdTe avalanche photodiode (APD) arrays developed by Leonardo DRS for space lidar detectors. We tested these devices with both approximately 60 MeV protons and gamma rays, with and without the read out integrated circuit (ROIC). We also measured the transient responses with the device fully powered and with the APD gain from unity to greater than 1000. The detectors produced a large current impulse in response to each proton hit but the response completely recovered within 1 microsecond. The devices started to have persistent damage at a proton fluence of 7e10 protons/cm2, equivalent to 10 krad(Si) total ionization dose. The dark current became much higher after the device was warmed to room temperature and cooled to 80K again, but it completely annealed after baking at 85 C for several hours. These results showed the HgCdTe APD arrays are suitable for use in space lidar for typical Earth orbiting and planetary missions provided that provisions are made to heat the detector chip to 85 C for several hours after radiation damage becomes evident that system performance is impacted.

Sun, Xiaoli↗
NASA NTRS2019

HgCdTe Avalanche Photodiode Array Detectors with Single Photon Sensitivity and Integrated Detector Cooler Assemblies for Space Lidar Applications

A HgCdTe avalanche photodiode (APD) focal plane array assembly with linear mode photon-counting capability has been developed for space lidar applications. An integrated detector cooler assembly (IDCA) has been built using a miniature Stirling cooler. A microlens array has been included to improve the fill factor. The HgCdTe APD has a spectral response from 0.9- to 4.3-μm wavelengths, a photon detection efficiency as high as 70%, and a dark count rate of <250 kHz at 110 K. The mass of the IDCA is 0.8 kg and the total electrical power consumption is about 7 W. The HgCdTe APD arrays have been characterized at NASA Goddard Space Flight Center. A series of environmental tests have been conducted for the IDCAs, including vibration, thermal cycling, and thermal vacuum tests. A description of the device and the test results at NASA are given in this paper.

Sun, Xiaoli↗
NASA NTRS1989

Effective amplifier noise for an optical receiver based on linear mode avalanche photodiodes

The rms noise charge induced by the amplifier for an optical receiver based on the linear-mode avalanche photodiode (APD) was analyzed. It is shown that for an amplifier with a 1-pF capacitor and a noise temperature of 100 K, the rms noise charge due to the amplifier is about 300. Since the noise charge must be small compared to the signal gain, APD gains on the order of 1000 will be required to operate the receiver in the linear mode.

Chen, C.-C.↗
NASA NTRS1995

Gain properties of doped GaAs/AlGaAs multiple quantum well avalanche photodiode structures

A comprehensive characterization has been made of the static and dynamical response of conventional and multiple quantum well (MQW) avalanche photodiodes (APDs). Comparison of the gain characteristics at low voltages between the MQW and conventional APDs show a direct experimental confirmation of a structure-induced carrier multiplication due to interband impact ionization. Similar studies of the bias dependence of the excess noise characteristics show that the low-voltage gain is primarily due to electron ionization in the MQW-APDS, and to both electron and hole ionization in the conventional APDS. For the doped MQW APDS, the average gain per stage was calculated by comparing gain data with carrier profile measurements, and was found to vary from 1.03 at low bias to 1.09 near avalanche breakdown.

Menkara, H. M.↗
NASA NTRS2013

Single-Photon-Sensitive HgCdTe Avalanche Photodiode Detector

The purpose of this program was to develop single-photon-sensitive short-wavelength infrared (SWIR) and mid-wavelength infrared (MWIR) avalanche photodiode (APD) receivers based on linear-mode HgCdTe APDs, for application by NASA in light detection and ranging (lidar) sensors. Linear-mode photon-counting APDs are desired for lidar because they have a shorter pixel dead time than Geiger APDs, and can detect sequential pulse returns from multiple objects that are closely spaced in range. Linear-mode APDs can also measure photon number, which Geiger APDs cannot, adding an extra dimension to lidar scene data for multi-photon returns. High-gain APDs with low multiplication noise are required for efficient linear-mode detection of single photons because of APD gain statistics -- a low-excess-noise APD will generate detectible current pulses from single photon input at a much higher rate of occurrence than will a noisy APD operated at the same average gain. MWIR and LWIR electron-avalanche HgCdTe APDs have been shown to operate in linear mode at high average avalanche gain (M > 1000) without excess multiplication noise (F = 1), and are therefore very good candidates for linear-mode photon counting. However, detectors fashioned from these narrow-bandgap alloys require aggressive cooling to control thermal dark current. Wider-bandgap SWIR HgCdTe APDs were investigated in this program as a strategy to reduce detector cooling requirements.

Huntington, Andrew↗
NASA NTRS2015

Linear Mode HgCdTe Avalanche Photodiodes for Photon Counting Applications

An overview of recent improvements in the understanding and maturity of linear mode photon counting with HgCdTe electron-initiated avalanche photodiodes is presented. The first HgCdTe LMPC 2x8 format array fabricated in 2011 with 64 micron pitch was a remarkable success in terms of demonstrating a high single photon signal to noise ratio of 13.7 with an excess noise factor of 1.3-1.4, a 7 ns minimum time between events, and a broad spectral response extending from 0.4 micron to 4.2 micron. The main limitations were a greater than 10x higher false event rate than expected of greater than 1 MHz, a 5-7x lower than expected APD gain, and a photon detection efficiency of only 50% when greater than 60% was expected. This paper discusses the reasons behind these limitations and the implementation of their mitigations with new results.

HgCdTe↗
NASA NTRS2006

Effects of Displacement Damage on the Time-Resolved Gain and Bandwidth of a Low Breakdown Voltage Si Avalanche Photodiode

Effects of displacement damage and ionization damage induced by gamma irradiation on the dark current and impulse response of a high-bandwidth low breakdown voltage Si Avalanche Photodiode has been investigated using picosecond laser microscopy. At doses as high as 10Mrad (Si) minimal alteration in the impulse response and bandwidth were observed. However, dark current measurements also performed with and without biased irradiation exhibit anomalously large damage factors for applied biases close to breakdown. The absence of any degradation in the impulse response is discussed as are possible mechanisms for higher dark current damage factors observed for biased irradiation.

bandwidth↗
NASA NTRS1996

Effect of variations in the doping profiles on the properties of doped multiple quantum well avalanche photodiodes

The purpose of this study is to use both theoretical and experimental evidence to determine the impact of doping imbalance and symmetry on the physical and electrical characteristics of doped multiple quantum well avalanche photodiodes (APD). Theoretical models have been developed to calculate the electric field valence and conduction bands, capacitance-voltage (CV), and carrier concentration versus depletion depth profiles. The models showed a strong correlation between the p- and n-doping balance inside the GaAs wells and the number of depleted stages and breakdown voltage of the APD. A periodic doping imbalance in the wells has been shown to result in a gradual increase (or decrease) in the electric field profile throughout the device which gave rise to partially depleted devices at low bias. The MQW APD structures that we modeled consisted of a 1 micron top p(+)-doped (3 x 10(exp 18) cm(exp -3)) GaAs layer followed by a 1 micron region of alternating layers of GaAs (500 A) and Al(0.42)Ga(0.58)As (500 A), and a 1 micron n(+) back layer (3 x 10(exp 18) cm(exp -3)). The GaAs wells were doped with p-i-n layers placed at the center of each well. The simulation results showed that in an APD with nine doped wells, and where the 50 A p-doped layer is off by 10% (p = 1.65 x 10(exp 18) cm(exp -3), n = 1.5 x 10(exp 18) cm(exp -3)), almost half of the MQW stages were shown to be undepleted at low bias which was a result of a reduction in the electric field near the p(+) cap layer by over 50% from its value in the balanced structure. Experimental CV and IV data on similar MBE grown MQW structures have shown very similar depletion and breakdown characteristics. The models have enabled us to better interpret our experimental data and to determine both the extent of the doping imbalances in the devices as well as the overall p- or n-type doping characteristics of the structures.

Menkara, H. M.↗
NASA NTRS1987

Effect of atmospheric turbulence on the bit error probability of a space to ground near infrared laser communications link using binary pulse position modulation and an avalanche photodiode detector

The effect of atmospheric turbulence on the bit error rate of a space-to-ground near infrared laser communications link is investigated, for a link using binary pulse position modulation and an avalanche photodiode detector. Formulas are presented for the mean and variance of the bit error rate as a function of signal strength. Because these formulas require numerical integration, they are of limited practical use. Approximate formulas are derived which are easy to compute and sufficiently accurate for system feasibility studies, as shown by numerical comparison with the exact formulas. A very simple formula is derived for the bit error rate as a function of signal strength, which requires only the evaluation of an error function. It is shown by numerical calculations that, for realistic values of the system parameters, the increase in the bit error rate due to turbulence does not exceed about thirty percent for signal strengths of four hundred photons per bit or less. The increase in signal strength required to maintain an error rate of one in 10 million is about one or two tenths of a db.

Safren, H. G.↗
NASA NTRS1988

Predictions of silicon avalanche photodiode detector performance in water vapor differential absorption lidar

Performance analyses are presented which establish that over most of the range of signals expected for a down-looking differential absorption lidar (DIAL) operated at 16 km the silicon avalanche photodiode (APD) is the preferred detector for DIAL measurements of atmospheric water vapor in the 730 nm spectral region. The higher quantum efficiency of the APD's, (0.8-0.9) compared to a photomultiplier's (0.04-0.18) more than offsets the higher noise of an APD receiver. In addition to offering lower noise and hence lower random error the APD's excellent linearity and impulse recovery minimize DIAL systematic errors attributable to the detector. Estimates of the effect of detector system parameters on overall random and systematic DIAL errors are presented, and performance predictions are supported by laboratory characterization data for an APD receiver system.

Kenimer, R. L.↗
NASA NTRS2000

Characterization of Advanced Avalanche Photodiodes for Water Vapor Lidar Receivers

Development of advanced differential absorption lidar (DIAL) receivers is very important to increase the accuracy of atmospheric water vapor measurements. A major component of such receivers is the optical detector. In the near-infrared wavelength range avalanche photodiodes (APD's) are the best choice for higher signal-to-noise ratio, where there are many water vapor absorption lines. In this study, characterization experiments were performed to evaluate a group of silicon-based APD's. The APD's have different structures representative of different manufacturers. The experiments include setups to calibrate these devices, as well as characterization of the effects of voltage bias and temperature on the responsivity, surface scans, noise measurements, and frequency response measurements. For each experiment, the setup, procedure, data analysis, and results are given and discussed. This research was done to choose a suitable APD detector for the development of an advanced atmospheric water vapor differential absorption lidar detection system operating either at 720, 820, or 940 nm. The results point out the benefits of using the super low ionization ratio (SLIK) structure APD for its lower noise-equivalent power, which was found to be on the order of 2 to 4 fW/Hz(sup (1/2)), with an appropriate optical system and electronics. The water vapor detection systems signal-to-noise ratio will increase by a factor of 10.

Refaat, Tamer F.↗
NASA NTRS2010

Hybrid AlGaN-SiC Avalanche Photodiode for Deep-UV Photon Detection

The proposed device is capable of counting ultraviolet (UV) photons, is compatible for inclusion into space instruments, and has applications as deep- UV detectors for calibration systems, curing systems, and crack detection. The device is based on a Separate Absorption and Charge Multiplication (SACM) structure. It is based on aluminum gallium nitride (AlGaN) absorber on a silicon carbide APD (avalanche photodiode). The AlGaN layer absorbs incident UV photons and injects photogenerated carriers into an underlying SiC APD that is operated in Geiger mode and provides current multiplication via avalanche breakdown. The solid-state detector is capable of sensing 100-to-365-nanometer wavelength radiation at a flux level as low as 6 photons/pixel/s. Advantages include, visible-light blindness, operation in harsh environments (e.g., high temperatures), deep-UV detection response, high gain, and Geiger mode operation at low voltage. Furthermore, the device can also be designed in array formats, e.g., linear arrays or 2D arrays (micropixels inside a superpixel).

Aslam, Shahid↗