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46 records · Page 3

Feasibility study of a high spatial and time resolution beam emission spectroscopy diagnostic for localized density fluctuation measurements in Lithium Tokamak eXperiment-β (LTX-β)

Trapped electron mode (TEM) is the main source of turbulence predicted for the unique operation regime of a flat temperature profile under low-recycling conditions in the LTX-β tokamak, while ion temperature gradient driven turbulence may also occur with gas fueling from the edge. To investigate mainly TEM scale density fluctuations, a high spatial and time resolution 2D beam emission spectroscopy (BES) diagnostic is being developed. Apart from spatially localized density turbulence measurement, BES can provide turbulence flow and flow shear dynamics. This BES system will be realized using an avalanche photodiode-based camera and narrow band interference filter. The system can acquire data at 2 MHz. Simulations with the Simulation of Spectra (SOS) code indicate that a high signal to noise ratio can be achieved with the proposed system. This will enable sampling the density fluctuations at this high time resolution. Finally, the design considerations and system optimization using the SOS code are presented.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Towards a Counting Point Detector for Nanosecond Coherent X-ray Science

We present the technical realization of a high-speed hard X-ray single-photon counting-detection scheme based on a commercial avalanche silicon photodiode and high-speed oscilloscope. The development is motivated by the need to perform pulse-resolved photon-correlation and pump-probe studies at synchrotron sources with densely packed pulse patterns that result in high repetition rate pulses on the order of hundreds of MHz. Commissioning experiments are performed at the 1C PAL-KRISS beamline at PLS-II of South Korea operating at a burst mode maximum repetition rate of 500 MHz. In such a high count-rate measurement, detector dead-time can lead to a distortion of counting statistics. We are able to model the counting behavior of our detector under these conditions with a detector dead-time comparable to time between X-ray pulses, implying that nanosecond X-ray photon correlation spectroscopy should be possible at diffraction-limited light sources.

36 MATERIALS SCIENCE↗

LGAD-Based Silicon Sensors for 4D Detectors

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun.

spatial resolution↗

Detecting missing struts in metallic micro-lattices using high speed melt pool thermal monitoring

Metal lattices are an important class of cellular materials that offer great advantages by providing high-strength and lightweight structures as compared to bulk materials. Progress in additive manufacturing techniques has led to increased complexity in design and shape of produced objects and is greatly beneficial for the development of metallic lattice structures. However additive manufacturing of lattices suffers from unpredictable defect creation that can compromise its mechanical integrity. Although post-build inspection techniques can provide quality assurance of the process, accurate assessment can be technically challenging, time consuming and costly. In this work, we investigate the use of high-speed measurements of thermal emission from the melt pool to identify defective individual struts formed with a missing bottom half in an otherwise fully built lattice structure produced with laser powder bed fusion. Surprisingly, results indicate lower photodiode signal, suggesting colder melt pool surface temperature, when printing struts with missing bottom half as compared to nominal struts. Additional thermographic imaging and multi-physics simulations reveal that the low photodiode signal is accompanied by presence of hot spatters carrying heat away from detection and continuous avalanche of powder on the melt pool. Based on these observations, a method was developed to identify defective individual struts with missing bottom half in full built lattices. This prediction approach provides valuable insights about part quality which are important for process qualification and illustrates the utility of melt pool thermal emission monitoring for identifying specific defects introduced by laser powder bed fusion.

36 MATERIALS SCIENCE↗

Upgrade of the helically symmetric experiment Thomson scattering diagnostic suite

The Helically Symmetric eXperiment (HSX) Thomson Scattering (TS) diagnostic is being upgraded to decrease uncertainty in electron temperature and density measurements. Upgrades to the HSX TS diagnostic will consist of a novel redesign of polychromator electronics and digitization of the TS output signal. Here, we also present a study of the benefits of an additional spectral channel that will sample the red-shifted band of the scattered spectrum. In conclusion, to maximize system bandwidth (BW) and gain, while minimizing noise, the existing low-BW polychromator electronics on HSX will be replaced by high-BW, high gain circuitry designed in-house.

47 OTHER INSTRUMENTATION↗

p-i-n High-Speed Photodiodes for X-RAY and Infrared Imagers Fabricated by In-Situ -Doped APCVD Germanium Homoepitaxy

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ-doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity profiles resulting from in situ doping, as measured by spreading-resistance profilometry, were 5 × 10 16 , 2 × 10 15 , and 2 × 10 18 (cm -3 ) for the p-type anode, i-region absorber, and n+ cathode, respectively. Scanning electron microscopy analysis revealed very-low defect densities in the epitaxial layers. The diodes, with diameters ranging 100-500 μm, exhibited excellent ideality (n = 1.15) and less than 1-μA dark current, corresponding to up to 80 kV-cm -1 electric field in the smallest devices. Avalanche breakdown bias was consistently at a magnitude of 50 V or lower. External quantum efficiencies in the near-infrared spectrum peaked at 70%. Pulsed illumination experiments, both in the infrared and X-ray regions, showed pulse rise times in the 100-140 ps range, indicating excellent applicability of this method to high-speed X-ray or infrared applications.

36 MATERIALS SCIENCE↗