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A derivation of the explicit form of the threshold law for electron impact ionization of atoms is presented, based on the Coulomb-dipole theory. The important generalization is made of using a dipole function whose moment is the dipole moment formed by an inner electron and the nucleus. The result is a modulated quasi-linear law for the yield of positive ions which applies to positron-atom impact ionization.
Optical ionization apparent threshold calculations for noble gases using multiphoton photoionization theory
Asymptotic form of wave function and threshold dependence of cross section related to electron- hydrogen ionization
The flatness of the energy differential cross section in impact ionization is derived analytically in the Wannier theory. However it is shown that the Wannier zone is confined to a region of the order E/5 is less than or equal to epsilon is less than or equal to 4E/5, where E is the available energy and epsilon is the energy of the electrons. By contrasting the known results of photoionization and photodetachment, one can cogently argue that in the complementary region where electrons share their energy very unequally the cross section rises to a value independent of E, and that this region determines the form of the threshold law.
The photoionization efficiency curves of H2(+), O2(+), and HO2(+) have been studied in a mixture of hydrogen and oxygen over the wavelength range from 650 to 810 A. The HO2(+) ion appears at 804 A, the threshold for ionization of H2, by the reaction H2(+) + O2 yields HO2(+) + H. The relative photoionization efficiency curves of H2(+) and HO2(+) are the same from 804 to 764 A. Below 764 A production of the 4 Pi u metastable electronic state of O2(+) leads to the formation of HO2(+) by the reaction O2(+)(a 4 Pi u) + H2 yields HO2(+) + H.
Asymptotic form of wave function and threshold behavior of cross section for ionization of atomic hydrogen by electron impact
Direct and autoionization of H molecule by electron impact near threshold noting cross section, photoionization and vibrational and rotational energy changes
Be photoionization cross section calculated noting autoionization dominance near threshold, 1P phase shift and resonances location
The results from a balloon-borne gas Cherenkov counter (threshold 16.5 GeV/nucleon) and an ionization spectrometer are presented. The gas Cherenkov counter provides an absolute energy distribution for the response of the calorimeter for 5 or = Z 26 nuclei of cosmic rays. The contribution of scintillation to the gas Cherenkov pulse height was obtained by independently selecting particles below the gas Cherenkov threshold using the ionization spectrometer. Energy spectra were derived by minimizing the chi squared between Monte Carlo simulted data and flight data. Best fit power laws, dN/dE = AE-gamma, were determined for C, N, O, Ne, Mg, and Si. The power laws, all consistent with E (-2.7) are not good fits to the data. A better fit is obtained using the spectrum derived from the spectrometer. The data from the ionization calorimeter and the gas Cherenkov are thus completely self-consistent.
The results from a balloon-borne gas Cerenkov counter (threshold 16.5 GeV/nuc) and an ionization spectrometer are presented. The gas Cerenkov counter provides an absolute energy calibration for the response of the calorimeter for the Z range of 5-26 nuclei of cosmic rays. The contribution of scintillation to the gas Cerenkov pulse height has been obtained by independently selecting particles below the gas Cerenkov threshold using the ionization spectrometer. Energy spectra were derived by minimizing the chi-squared between a Monte Carlo simulated data and flight data. Best fit power laws were determined for C, N, O, Ne, Mg, and Si. The power laws, all consistent with E exp-2.7, are not good fits to the data. A better fit is obtained using the spectrum derived from the spectrometer.
Refractory metals and metal alloys analyzed regarding electron work function and threshold temperature for surface ionization in all-metal guard ring diode with directly heated wire
The Coulomb-dipole theory is employed to derive a threshold law for the lowest energy needed for the separation of three particles from one another. The study focuses on an electron impinging on a neutral atom, and the dipole is formed between an inner electron and the nucleus. The analytical dependence of the transition matrix element on energy is reduced to lowest order to obtain the threshold law, with the inner electron providing a shield for the nucleus. Experimental results using the LAMPF accelerator to produce a high energy beam of H- ions, which are then exposed to an optical laser beam to detach the negative H- ion, are discussed. The threshold level is found to be confined to the region defined by the upper bound of the inverse square of the Coulomb-dipole region. Difficulties in exact experimental confirmation of the threshold are considered.
Refractory metals and metal alloys analyzed regarding electron work function and threshold temperature for surface ionization in all-metal guard ring diode with directly heated wire
Radiation cataractogenesis induced by small acute doses of particulate radiations and photons in the New Zealand white rabbit (Oryctolagus cuniculus), the beagle dog (Canis familiaris) and the rhesus monkey (Macaca mulatta) is discussed in the context of the use of animal models to assess the radiation hazards faced by humans during lengthy sojourns in deep space. Attention is paid to (1) the importance of lifespan studies with long-lived species - the above animals have median lifespans in captivity of 5-7, 13-14 and 25 years, respectively; and (2) the magnitudes of possible dose thresholds for cataractogenesis from sparsely ionizing radiations and the modifications of those thresholds by the late degenerative phase of the phenomenon.
The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E Scholl, and M. Rudan, and a more exact, numerical method of Y. Wang and K. F. Brennan. Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formula, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with (he completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to (he overlap integrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such [he transition rate may be overestimated at those points for which "near vertical," small change in k, transitions occur.
The electron interband impact-ionization rate for both silicon and gallium arsenide is calculated using an ensemble Monte Carlo simulation with the expressed purpose of comparing different formulations of the interband ionization transition rate. Specifically, three different treatments of the transition rate are examined: the traditional Keldysh formula, a new k-dependent analytical formulation first derived by W. Quade, E. Scholl, and M. Rudan (1993), and a more exact, numerical method of Y. Wang and K. F. Brennan (1994). Although the completely numerical formulation contains no adjustable parameters and as such provides a very reliable result, it is highly computationally intensive. Alternatively, the Keldysh formular, although inherently simple and computationally efficient, fails to include the k dependence as well as the details of the energy band structure. The k-dependent analytical formulation of Quade and co-workers overcomes the limitations of both of these models but at the expense of some new parameterization. It is found that the k-dependent analytical method of Quade and co-workers produces very similar results to those obtained with the completely numerical model for some quantities. Specifically, both models predict that the effective threshold for impact ionization in GaAs and silicon is quite soft, that the majority of ionization events originate from the second conduction band in both materials, and that the transition rate is k dependent. Therefore, it is concluded that the k-dependent analytical model can qualitatively reproduce results similar to those obtained with the numerical model yet with far greater computational efficiency. Nevertheless, there exist some important drawbacks to the k-dependent analytical model of Quade and co-workers: These are that it does not accurately reproduce the quantum yield data for bulk silicon, it requires determination of a new parameter, related physically to the overlap intergrals of the Bloch state which can only be adjusted by comparison to experiment, and fails to account for any wave-vector dependence of the overlap integrals. As such the transition rate may be overestimated at those points for which 'near vertical,' small change in k, transitions occur.
The partial photoionization cross sections for producing the NO(+) parent ion and the O(+), N(+), and NO2(+) fragment ions from neutral NO are presented from 120 to 614 A. The results indicate predissociation of the c(sup3) pi (21.72 eV) and B prime (sup 1) sigma (+) (22.73 eV) electronic states of NO(+). The photoionization threshold for double ionization was found to be 39.4 + or 0.12 eV.
The partial photoionization cross sections for producing the NO(+) parent ion and the O(+), N(+), and NO(2+) fragmentations from neutral NO are presented from 120 to 614 A. The results indicate predissociation of the 3 pi (21.72 eV) and B-prime 1Sigma(+) (22.73 eV) electronic states of NO(+). The photoionization threshold for double ionization was found to be 39.4 + or - 0.12 eV.