Search NASA⌕ Search

SEARCH · Search NASA

Results for “capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Superstructured NiMoO 4 @CoMoO 4 core-shell nanofibers for supercapacitors with ultrahigh areal capacitance

High areal capacitance for a practical supercapacitor electrode requires both large mass loading and high utilization efficiency of electroactive materials, which presents a great challenge. Herein, we demonstrated the unprecedented synthesis of superstructured NiMoO 4 @CoMoO 4 core-shell nanofiber arrays (NFAs) on a Mo-transition-layer-modified nickel foam (NF) current collector as a new material, achieving the synergistic combination of highly conductive CoMoO 4 and electrochemical active NiMoO 4 . Moreover, this superstructured material exhibited a large gravimetric capacitance of 1,282.2 F/g in 2 M KOH with a mass loading of 7.8 mg/cm 2 , leading to an ultrahigh areal capacitance of 10.0 F/cm 2 that is larger than any reported values of CoMoO 4 and NiMoO 4 electrodes. In conclusion, this work provides a strategic insight for rational design of electrodes with high areal capacitances for supercapacitors.

42 ENGINEERING↗

Efficient and Flexible Sensitivity Matrix Computation for Adaptive Electrical Capacitance Volume Tomography

Electrical capacitance tomography is a widely used sensor modality for flow imaging in many industrial settings. Adaptive Electrical Capacitance Volume Tomography (AECVT) extends the capabilities of traditional ECT by enabling direct volumetric imaging and an improved resolution. Construction of the sensitivity matrix is a necessary step to obtain flow images. This step requires computation of the electric field inside the sensing domain, which is done via a typical field solver such as the finite element method. In this work, we present an efficient and flexible method to construct the sensitivity matrix for Adaptive Electrical Capacitance Volume Tomography (AECVT) based on individual electrode segment excitations and their judicious combination to form desired matrix elements. We illustrate how the proposed method yields the same sensitivity matrix as the traditional method but at a much lower computational cost. Once all segment contributions are obtained, we also indicate how the proposed method, unlike the traditional approach, can generate the sensitivity matrix on demand for an arbitrary combination of synthetic electrodes and obviating the need for any additional field computations. Finally, we present image reconstruction results for two different experimental scenarios where the mutual capacitance data and the corresponding sensitivity vectors are obtained through the proposed measurement combination scheme.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Medium-Voltage Isolated Auxiliary Power Supply Design for High Insulation Capability, Ultra-Low Coupling Capacitance, and Small Size

To fully utilize the benefits of medium-voltage (MV) silicon carbide (SiC)-based converter and achieve high power density, the isolated auxiliary power supply (IAPS) needs to be as small as possible. However, the high insulation and low coupling capacitance requirements, considering the high voltage and high dv / dt , are constraints of size reduction. This article proposes an MV IAPS design for high insulation capability, ultra-low coupling capacitance, and small size. The topology selection, efficiency, load regulation, coupling capacitance, and size reduction considerations are discussed. A 2.5 W MV IAPS is designed and built for a 10 kV SiC mosfet -based 13.8 kV/100 kW three-phase converter, achieving a partial discharge (PD) inception voltage of higher than 15 kV rms, ultra-low coupling capacitance of 1.03 pF, and smaller size than that of the commercial products as well as the state-of-art research prototypes. Experimental results of PD test, 10 kV SiC mosfet -based half-bridge test, and 13.8 kV/100 kVA three-phase converter full rating test are conducted for design validation.

42 ENGINEERING↗

Decoupling Proton and Cation Contributions to Capacitive Charge Storage in Birnessite in Aqueous Electrolytes

Abstract Nanostructured birnessite is of interest as an electrode material for aqueous high power electrochemical energy storage as well as desalination devices. In neutral pH aqueous electrolytes, birnessite exhibits a capacitive response attributed to the adsorption of cations and protons at the outer surface and within the hydrated interlayer. Here, we utilize the understanding of proton‐coupled electron transfer (PCET) in buffered electrolytes to decouple the role of protons and cations in the capacitive charge storage mechanism of birnessite at neutral pH. We find that without buffer, birnessite exhibits primarily potential‐independent (capacitive) behavior with excellent cycling stability. Upon the addition of buffer, the capacity initially increases and the cyclic voltammograms become more potential‐dependent, features attributed to the presence of PCET with the birnessite. However, long‐term cycling in the buffered electrolyte leads to significant capacity fade and dissolution, which is corroborated through ex situ characterization. ReaxFF atomistic scale simulations support the observations that proton adsorption leads to birnessite degradation and that capacitive charge storage in birnessite is primarily attributed to cation adsorption at the outer surface and within the interlayer.

Saeed, Saeed↗

Enhancing the capacitive performance of microporous materials with protic ionic liquids

Classical density functional theory (cDFT) is used to investigate the electrosorption of protic ionic liquids in porous electrodes within the framework of a coarse-grained model. The purpose of this study is to clarify the capacitive behavior of protic ionic liquids in confined geometry. Previous studies have indicated that thermodynamic properties (e.g., capacitance, phase behavior and ionic conductivity) are influenced by the composition of the acid-base system and show asymmetry between acid dominant versus base dominant compositions. Here, we find that the electric double layer capacitance can be significantly improved by using protic ionic liquids compared to its aprotic counterpart through optimization of the mixture composition (i.e., the ratio of acid to base). We demonstrate the influence of pore size and applied voltage on the capacitance performance of protic ionic liquids and provide insight into microscopic understanding of ion and solvent distributions inside micropores.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Extraction of intrinsic contact resistance in organic thin-film transistors with single channel length and high capacitance density

Accurate characterization of the intrinsic contact resistance is important for the optimization of organic thin-film transistors (OTFTs), especially in devices with high gate capacitance density. This study reports on a method for the extraction of the intrinsic, or gate-voltage independent, contact resistance from OTFTs. In contrast to the transfer length method (TLM), this method can be applied to devices with a single geometry. The method is an extension of the previously reported Y-function method and combines the model proposed by S. Luan et al. to analyze the effect of the gate voltage on the contact resistance. Here, this method is first applied to OTFTs with a bottom-gate top-contact geometry having varying gate capacitance density values. The intrinsic contact resistance is found to decrease with increased gate capacitance density with values ranging between 4 kΩcm and under 1 kΩcm when the gate capacitance is changed from 36.6 nF/cm 2 to 231.7 nF/cm 2 , respectively. These values are in good agreement with those obtained using TLM experiments. The new method is also shown to be applicable to OTFTs with top-gate bottom contact geometry.

36 MATERIALS SCIENCE↗

Capacitance–voltage modeling of mid-wavelength infrared nBn detectors

Capacitance–voltage measurements are a powerful technique to determine doping profiles of semiconductor pn junctions and Schottky barrier diodes. The measurements were recently extended to III-V-based mid-wavelength nBn infrared detectors, and absorber doping densities have been extracted using the widely accepted Schottky approximation, where the potential drop across the device is assumed to be across the depleting absorber layer. However, this approach is limited to when the absorber region of the nBn is under high reverse bias and thus is only able to extract the absorber region doping profile. Here, we introduce a semi-analytical model that is capable of extracting barrier dopant polarity, doping concentration, and thickness, as well as contact and absorber layer doping concentrations, all from a capacitance–voltage measurement. Rather than solely considering the potential drop across the depleting layers, it considers the potential drop across the accumulating layer as well. This negative charge accumulation occurs for the contact and absorber layers in the case of reverse and forward biases, respectively. This allows for a single model to be applied to a capacitance–voltage curve at forward and reverse biases and it can provide regions of bias where the absorber transitions from depletion to accumulation. We compare the agreement of the semianalytical model with modeling results from commercially available finite element method software and experimental capacitance–voltage data. Finally, we show that the method is consistent with the Schottky approximation of extracting absorber doping densities at high reverse bias and discuss the model's limitations.

Physics↗

A PWM Strategy for Cascaded H-bridges to Reduce the Loss Caused by Parasitic Capacitances of Medium Voltage Dual Active Bridge Transformers

In this paper, to reduce the power loss caused by the parasitic capacitances of medium voltage medium frequency transformers in a two-stage dc/ac converter, including a dual active bridge (DAB)-based dc/dc stage and a cascaded H-bridge (CHB)-based dc/ac stage, a PWM strategy is proposed for the dc/ac stage. For each H-bridge, by shifting the high switching frequency to one half-bridge and having the other half-bridge switching at the fundamental frequency of the ac voltage, equivalent frequencies of transformer terminal-to-ground voltages are reduced. As a result, the frequencies of charging and discharging current to the parasitic capacitance are reduced, and therefore the loss caused by the parasitic capacitances is reduced. Compared to the conventional phase-shift PWM, the proposed PWM strategy can reduce the parasitic capacitance loss by about 75%. Experimental test results of one phase in the 13.8 kV/ 100 kW converter prototype are provided to validate the approach.

Li, Haiguo↗

Capacitive discharge in flash experiments: A discussion of the charged species

Abstract We report on the discharge of the capacitance formed at the electrodes in flash experiments with yttria stabilized zirconia. The experiments were carried out by disconnecting the current, and, instead, short circuiting the electrodes through a resistor. The time dependent voltage across the resistor was measured; the ratio yielded the discharge current. The current decayed exponentially with time, as expected in an RC circuit, which allowed the measurement of the capacitance. Experiments were carried out in two ways. In one case the specimens were flashed within a glove box filled with Ar (< 1 ppm O 2 ): these yielded electronic conductors. In the other case the specimens were flashed in ambient air: while electronically conducting in‐flash these specimens recover their prior insulating behavior as soon as the current is turned off. The stored charge was two orders of magnitude greater in the Ar experiments. Rather unexpectedly, the sign of the voltage expressed at the electrodes was opposite in experiments carried out in air and in Ar. The capacitance measured in the discharge experiments is attributed to the formation of space charge adjacent to the electrodes. In the case of Ar experiments, the capacitance is very large, approaching 1 F; in this case the space charge is expected to be constituted from ions. In the air experiments the specimen becomes insulating, trapping the electrons as a space charge. Hall effect measurements of the carrier density and X‐ray photoelectron spectroscopy characterization of electronically conducting single crystal specimen of cubic zirconia are reported.

Materials Science↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

Deman, H. J. J.↗

A fast algorithm for the calculation of junction capacitance and its application for impurity profile determination.

A fast algorithm is described which calculates the space charge layer width and junction capacitance for an arbitrary impurity profile and for plane, cylindrical and spherical junctions. The algorithm is based on the abrupt space charge edge (ASCE) approximation. A method to use the algorithm for the determination of impurity profiles for two-sided junctions is presented. An expression is derived for the built-in voltage to be used for capacitance calculations with the ASCE approximation. Experimental evidence is given that the algorithm permits very accurate capacitance calculations and also predicts the exact temperature dependence of the junction capacitance.

De Man, H. J. J.↗

A user oriented computer program for the analysis of microwave mixers, and a study of the effects of the series inductance and diode capacitance on the performance of some simple mixers

A user oriented computer program for analyzing microwave and millimeter wave mixers with a single Schottky barrier diode of known I-V and C-V characteristics is described. The program first performs a nonlinear analysis to determine the diode conductance and capacitance waveforms produced by the local oscillator. A small signal linear analysis is then used to find the conversion loss, port impedances, and input noise temperature of the mixer. Thermal noise from the series resistance of the diode and shot noise from the periodically pumped current in the diode conductance are considered. The effects of the series inductance and diode capacitance on the performance of some simple mixer circuits using a conventional Schottky diode, a Schottky diode in which there is no capacitance variation, and a Mott diode are studied. It is shown that the parametric effects of the voltage dependent capacitance of a conventional Schottky diode may be either detrimental or beneficial depending on the diode and circuit parameters.

Siegel, P. H.↗

Ramp-integration technique for capacitance-type blade-tip clearance measurement

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solutions shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects the environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and typical application are included.

Sarma, G. R.↗

Ramp-integration technique for capacitance-type blade-tip clearance measurement

The analysis of a proposed new technique for capacitance type blade tip clearance measurement is presented. The capacitance between the blade tip and a mounted capacitance electrode within a guard ring forms one of the feedback elements of a high speed operational amplifier. The differential equation governing the operational amplifier circuit is formulated and solved for two types of inputs to the amplifier - a constant voltage and a ramp. The resultant solution shows an output that contains a term that is proportional to the derivative of the product of the input voltage and the time constant of the feedback network. The blade tip clearance capacitance is obtained by subtracting the output of a balancing reference channel followed by integration. The proposed sampled data algorithm corrects for environmental effects and varying rotor speeds on-line, making the system suitable for turbine instrumentation. System requirements, block diagrams, and a typical application are included.

Sarma, Garimella R.↗

Recent advances in capacitance type of blade tip clearance measurements

Two recent electronic advances at NASA-Lewis that meet the blade tip clearance needs of a wide class of fans, compressors, and turbines are described. The first is a frequency modulated (FM) oscillator that requires only a single low cost ultrahigh frequency operational amplifier. Its carrier frequency is 42.8 MHz when used with a 61 cm long hermetically sealed coaxial cable. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a typical rotor blade. High temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum which produces a clearance error of + or - 10 microns at a clearance of 500 microns. In the second advance, a guarded probe configuration allows a longer cable capacitance. The capacitance of the probe is part of a small time constant feedback in a high speed operational amplifier. The solution of the governing differential equation is applied to a ramp type of input. The results show an amplifier output that contains a term which is proportional to the derivative of the feedback capacitance. The capacitance is obtained by subtracting a balancing reference channel followed by an integration stage.

Barranger, John P.↗

Recent advances in capacitance type of blade tip clearance measurements

Two recent electronic advances at NASA-Lewis that meet the blade tip clearance needs of a wide class of fans, compressors, and turbines are described. The first is a frequency modulated (FM) oscillator that requires only a single low cost ultrahigh frequency operational amplifier. Its carrier frequency is 42.8 MHz when used with a 61 cm long hermetically sealed coaxial cable. The oscillator can be calibrated in the static mode and has a negative peak frequency deviation of 400 kHz for a typical rotor blade. High temperature performance tests of the probe and 13 cm of the adjacent cable show good accuracy up to 600 C, the maximum which produces a clearance error of + or - 10 microns at a clearance of 500 microns. In the second advance, a guarded probe configuration allows a longer cable capacitance. The capacitance of the probe is part of a small time constant feedback in a high speed operational amplifier. The solution of the governing differential equation is applied to a ramp type of input. The results show an amplifier output that contains a term which is proportional to the derivative of the feedback capacitance. The capacitance is obtained by subtracting a balancing reference channel followed by an integration stage.

Barranger, John P.↗

Capacitive Proximity Sensor Has Longer Range

Capacitive proximity sensor on robot arm detects nearby object via capacitive effect of object on frequency of oscillator. Sensing element part of oscillator circuit operating at about 20 kHz. Total capacitance between sensing element and ground constitutes tuning capacitance of oscillator. Sensor circuit includes shield driven by replica of alternating voltage applied to sensing element. Driven shield concentrates sensing electrostatic field in exterior region to enhance sensitivity to object. Sensitivity and dynamic range has corresponding 12-to-1 improvement.

Vranish, John M.↗

Lightweight linear alternators with and without capacitive tuning

Permanent magnet excited linear alternators rated tens of kW and coupled to free-piston Stirling engines are presently viewed as promising candidates for long term generation of electric power in both space and terrestrial applications. Series capacitive cancellation of the internal inductive reactance of such alternators was considered a viable way to both increase power extraction and to suppress unstable modes of the thermodynamic oscillation. Idealized toroidal and cylindrical alternator geometries are used for a comparative study of the issues of specific mass and capacitive tuning, subject to stability criteria. The analysis shows that the stator mass of an alternator designed to be capacitively tuned is always greater than the minimum achievable stator mass of an alternator designed with no capacitors, assuming equal utilization of materials ratings and the same frequency and power to a resistive load. This conclusion is not substantially altered when the usually lesser masses of the magnets and of any capacitors are added. Within the reported stability requirements and under circumstances of normal materials ratings, this study finds no clear advantage to capacitive tuning. Comparative plots of the various constituent masses are presented versus the internal power factor taken as a design degree of freedom. The explicit formulas developed for stator core, coil, capacitor, and magnet masses and for the degree of magnet utilization provide useful estimates of scaling effects.

Niedra, Janis M.↗