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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

New measurement of the Fano factor of mercuric iodide

It is pointed out that mercuric iodide (HgI2) shows great promise as a high-resolution X-ray detector for use in X-ray astronomy. Development of mercuric iodide for astronomical work has required investigation of the temperature dependence of the HgI2 crystal parameters such as leakage current, resolution, and mobility of the charge carriers. The first studies in connection with these investigations have led to a new value of the Fano factor of 0.19 + or - 0.03. The best value previously reported was 0.27 measured at room temperature. The new upper limit of 0.19 for the HgI2 Fano factor was determined by cooling the HgI2 crystal and preamp to -20 C. It is concluded that room-temperature energy resolution of HgI2 is not limited by charge generation statistics but rather by collection efficiency.

Ricker, G. R.↗
NASA NTRS1977

Heat exchanger-ingot casting/slicing process, phase 1: Silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

A controlled growth, heat-flow and cool-down process is described that yielded silicon with a high degree of single crystallinity. Even when the seed melted out, very large grains formed. Solar cell samples made from cast material yielded conversion efficiency of over 9%. Representative characterizations of grown silicon demonstrated a dislocation density of less than 100/sq cm and a minority carrier diffusion length of 31 micron. The source of silicon carbide in silicon ingots was identified to be from graphite retainers in contact with silica crucibles. Higher growth rates were achieved with the use of a graphite plug at the bottom of the silica crucible.

Schmid, F.↗
NASA NTRS2005

Nanowire Thermoelectric Devices

Nanowire thermoelectric devices, now under development, are intended to take miniaturization a step beyond the prior state of the art to exploit the potential advantages afforded by shrinking some device features to approximately molecular dimensions (of the order of 10 nm). The development of nanowire-based thermoelectric devices could lead to novel power-generating, cooling, and sensing devices that operate at relatively low currents and high voltages. Recent work on the theory of thermoelectric devices has led to the expectation that the performance of such a device could be enhanced if the diameter of the wires could be reduced to a point where quantum confinement effects increase charge-carrier mobility (thereby increasing the Seebeck coefficient) and reduce thermal conductivity. In addition, even in the absence of these effects, the large aspect ratios (length of the order of tens of microns diameter of the order of tens of nanometers) of nanowires would be conducive to the maintenance of large temperature differences at small heat fluxes. The predicted net effect of reducing diameters to the order of tens of nanometers would be to increase its efficiency by a factor of .3. Nanowires made of thermoelectric materials and devices that comprise arrays of such nanowires can be fabricated by electrochemical growth of the thermoelectric materials in templates that contain suitably dimensioned pores (10 to 100 nm in diameter and 1 to 100 microns long). The nanowires can then be contacted in bundles to form devices that look similar to conventional thermoelectric devices, except that a production version may contain nearly a billion elements (wires) per square centimeter, instead of fewer than a hundred as in a conventional bulk thermoelectric device or fewer than 100,000 as in a microdevice. It is not yet possible to form contacts with individual nanowires. Therefore, in fabricating a nanowire thermoelectric device, one forms contacts on nanowires in bundles of the order of 10-microns wide. The fill factor for the cross-section of a typical bundle is about 1/2. Nanowires have been grown in alumina templates with pore diameters of 100 and 40 nm.

Borshchevsky, Alexander↗
NASA NTRS2009

nBn Infrared Detector Containing Graded Absorption Layer

It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

Gunapala, Sarath D.↗
NASA NTRS2000

Apparatus for retaining and releasing a payload

An apparatus for latching an object, such as a payload for a space vehicle, includes an expandible latch which is shifted between a relaxed open condition and a flexed closed condition by actuation of a pair of temperature-responsive members, such as shaped memory alloy (SMA) coil springs. One of the two temperature-responsive members biases an actuator into a first position that allows the expandible latch to open. The other SMA member biases the actuator in the opposite position to close the expandible latch. Heating the appropriate SMA member causes the actuator to move from one position to the other position. In the preferred embodiment, no power is required to maintain the actuator in either position once the position has been established. For example, the actuator may have a rest position that allows the expandible latch to remain open when the two SMA members are cooled and allowed to reach an equilibrium condition with respect to applied force to the actuator. A detent-and-ball arrangement may be used to maintain the position of the actuator after the expandible latch has been closed.

Carrier, Alain↗
NASA NTRS1986

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm.

Outlaw, R. A.↗
NASA NTRS2000

Clock Technology Development in the Laser Cooling and Atomic Physics (LCAP) Program

This paper presents the Laser Cooling and Atomic Physics (LCAP) program. It focuses on clock technology development. The topics include: 1) Overview of LCAP Flight Projects; 2) Space Clock 101; 3) Physics with Clocks in microgravity; 4) Space Clock Challenges; 5) LCAP Timeline; 6) International Space Station (ISS) Science Platforms; 7) ISS Express Rack; 8) Space Qualification of Components; 9) Laser Configuration; 10) Clock Rate Comparisons: GPS Carrier Phase Frequency Transfer; and 11) ISS Model Views. This paper is presented in viewgraph form.

Seidel, Dave↗
NASA NTRS1985

Spacelab Hitchhiker, for rapid, low cost orbital resources

A carrier system called the Hitchhiker is being developed by NASA to bridge the gap between the limited capabilites of the Get Away Special (GAS) and the full support capabilities of the Spacelab. The Hitchhiker offers economy class flight for experiments which need little in the way of support services. The concept behind this carrier system is to use existing hardware in two basic configurations and to provide several sets of fixed service interfaces to the payload. One version of the Hitchhiker was designed to hang on the right side of the bay and the other to span the bay. Aside from cargo bay sill-level mounting positions for experiments, both Hitchhiker configurations provide modest power, command, and data management, and no active cooling services. The Hitchhiker is a payload of opportunity system utilizing the volume and weight remaining in the cargo bay after primary-payload needs are satisfied. Pointing and other time line requirements are limited to those established by the primary payload. The paper descibes the experiments of the first two Hitchhiker flights, together with future applications.

James, E.↗
NASA NTRS1993

Method of fabricating a rocket engine combustion chamber

A process for making a combustion chamber for a rocket engine wherein a copper alloy in particle form is injected into a stream of heated carrier gas in plasma form which is then projected onto the inner surface of a hollow metal jacket having the configuration of a rocket engine combustion chamber is described. The particles are in the plasma stream for a sufficient length of time to heat the particles to a temperature such that the particles will flatten and adhere to previously deposited particles but will not spatter or vaporize. After a layer is formed, cooling channels are cut in the layer, then the channels are filled with a temporary filler and another layer of particles is deposited.

Holmes, Richard R.↗
NASA NTRS1998

Experiment-to-Experiment Disturbance of Microgravity Environment

The STS-87 Shuttle mission carried the Fourth United States MicroGravity Payload (USMP-4) as one of the primary payloads. Four USMP-4 science experiments were installed on two carriers in the cargo bay of the Shuttle. The Confined Helium Experiment (CHeX), located on the aft carrier, was particularly susceptible to vibrations in several frequency ranges due to structural resonances of the CHeX apparatus and the extreme sensitivity of the sample to vibrations. Shortly after activation of the USMP-4 payload, a strong, vibratory disturbance within the susceptibility region of the CHeX apparatus was detected. After investigating the characteristics of the disturbance and the time at which it first appeared, it was deduced that the vibration was generated by cooling fans in the Isothermal Dendritic Growth Experiment (IDGE). This paper will summarize the development of the conflict, briefly describe the disturbance source, and the susceptibility of the CHeX apparatus, and summarize the results of post-mission tests of IDGE.

DeLombard, Richard↗
NASA NTRS2000

NASA/JPL Plans for Fundamental Physics Research in Space

In 1998, about 100 researchers met twice to develop plans for the future in this research area. The results of these meetings have been collected in a package titled "A Roadmap for Fundamental Physics in Space". A summary of the Roadmap will be presented along with an overview of the current program. Research is being performed in Low Temperature and Condensed Matter Physics, Laser Cooling and Atomic Physics, and Gravitational and Relativistic Physics. There are currently over 50 investigators in the program of which 8 are being evaluated as potential flight experiments. The number of investigators is expected to grow further during the next selection cycle, planned to start toward the end of this year. In the near future, our investigators will be able to take advantage of long duration experimentation in Space using a suite of different carriers under development.

Isaelsson, Ulf E.↗
NASA NTRS1997

Efficiency and temperature dependence of water removal by membrane dryers

The vapor pressure of water in equilibrium with sorption sites within a Nafion membrane is given by log P(WN) = -3580/T + 10.01, where P(WN) is expressed in Torr and T is the membrane temperature, in kelvin. The efficiency of dryers based on selective permeation of water through Nafion can thus be enhanced by cooling the membrane. Residual water in effluents exceeds equilibrium levels if insufficient time is allowed for water to diffuse to the membrane surface as gas passes through the dryer. For tubular configurations, this limitation can be avoided if L > or = Fc(10(3.8)/120 pi D), where L is the length of the tubular membrane, in centimeters, Fc is the gas flow rate, in mL/ min, and D is the diffusion coefficient for water in the carrier gas at the operating temperature of the dryer, in cm2/s. An efficient dryer that at room temperature dries gas to a dew point of -61 degrees C is described; the same dryer maintained at 0 degrees C yields a dew point of -80 degrees C and removes water as effectively as Mg(ClO4)2 or a dry ice/acetone slush. The use of Nafion membranes to construct devices capable of delivering gas streams with low but precisely controlled humidities is discussed.

Non-NASA Center↗
NASA NTRS1985

Magnetism of nakhlites and chassignites

Hysteresis measurements on three shergottite and two nakhlite meteorites indicate single domain grain size behavior for the highly shocked Shergotty, Zagami, and EETA 79001 meteorites, with more multidomain-like behavior for the unshocked Nakhla and Governador Valadares meteorites. High viscosity and initial susceptibility for Antarctic shergottite ALHA 7705 indicate the presence of superparamagnetic grains in this specimen. Thermomagnetic analysis indicate Shergotty and Zagami as the least initially oxidized, while EETA 79001 appears to be the most oxidized. Cooling of the meteorite samples from high temperature in air results in a substantial increase in magnetization due to the production of magnetite through oxidation exsolution of titanomagnetite. However, vacuum heating substantially suppresses this process, and in the case of EETA 79001 and Nakhla, results in a rehomogenization of the titanomagnetite grains. Remanence measurements on several subsamples of Shergotty and Zagami meteorites reveal a large variation in intensity that does not seem related to the abundance of remanence carriers. The other meteorites carry only weak remanence, suggesting weak magnetizing fields as the source of their magnetic signal. The meteorites' weak field environment is consistent with Martian or asteroidal body origin but inconsistent with terrestrial origin.

Cisowski, S. M.↗
NASA NTRS1997

Cryo-Cooled Sapphire Oscillator for the Cassini Ka-Band Experiment

We present features for an ultra-stable sapphire cryogenic oscillator which has been designed to support the Cassini Ka-band Radio Science experiment. The design of this standard is new in several respects. It is cooled by a commercial cryocooler instead of liquid cryogens to increase operating time, and it uses a technology to adjust the temperature turn-over point to extend the upper operating temperature limit and to enable construction of multiple units with uniform operating characteristics. Objectives are 3 x 10(exp -15) stability for measuring times 1 second less than or equal to (tau) less than or equal to 100 seconds, phase noise of -85 dBc/Hz from offset frequencies of 1 Hz to 1000 Hz at 10 GHz carrier frequency, and a one year continuous operating period.

Wang, Rabi T.↗
NASA NTRS1992

Hypersonic reconnaissance aircraft

A conceptual design of a hypersonic reconnaissance aircraft for the U.S. Navy is discussed. After eighteen weeks of work, a waverider design powered by two augmented turbofans was chosen. The aircraft was designed to be based on an aircraft carrier and to cruise 6,000 nautical miles at Mach 4;80,000 feet and above. As a result the size of the aircraft was only allowed to have a length of eighty feet, fifty-two feet in wingspan, and roughly 2,300 square feet in planform area. Since this is a mainly cruise aircraft, sixty percent of its 100,000 pound take-off weight is JP fuel. At cruise, the highest temperature that it will encounter is roughly 1,100 F, which can be handled through the use of a passive cooling system.

Bulk, Tim↗
NASA NTRS2009

NASA Tech Briefs, August 2009

Topics covered include: Aligning a Receiving Antenna Array to Reduce Interference; Collecting Ground Samples for Balloon-Borne Instruments; Tethered Pyrotechnic Apparatus for Acquiring a Ground Sample; Enhanced Video-Oculography System; Joint Carrier-Phase Synchronization and LDPC Decoding; Dual-Polarization, Sideband-Separating, Balanced Receiver for 1.5 THz Modular Battery Charge Controller; Efficient Multiplexer FPGA Block Structures Based on G4FETs; VLSI Microsystem for Rapid Bioinformatic Pattern Recognition; Low-Noise Amplifier for 100 to 180 GHz; Improved Fabrication of Ceramic Matrix Composite/Foam Core Integrated Structures; Inert Welding/Brazing Gas Filters and Dryers; Fabricating Copper Nanotubes by Electrodeposition; Reducing Aerodynamic Drag on Empty Open Cargo Vehicles; Rotary Percussive Auto-Gopher for Deep Drilling and Sampling; More About Reconfigurable Exploratory Robotic Vehicles; Thermostatic Valves Containing Silicone-Oil Actuators; Improving Heat Flux Performance of Flat Surface in Spray-Cooling Systems; Treating Fibrous Insulation to Reduce Thermal Conductivity; Silica-Aerogel Composites Opacified with La(sub0.7)Sr(sub0.3)MnO3; Cyclic Oxidation Behavior of CuCrAl Cold-Sprayed Coatings for Reusable Launch Vehicles; Ceramic Fiber Structures for Cryogenic Load-Bearing Applications; Elastomer Reinforced with Carbon Nanotubes; Biologically Inspired Purification and Dispersion of SWCNTs; A Technique for Adjusting Eigenfrequencies of WGM Resonators; Low-Pressure, Field-Ionizing Mass Spectrometer; Modifying Operating Cycles to Increase Stability in a LITS; Chamber for Simulating Martian and Terrestrial Environments; Algorithm for Detecting a Bright Spot in an Image; Extreme Programming: Maestro Style; Adaptive Behavior for Mobile Robots; Protocol for Communication Networking for Formation Flying; Planning Complex Sequences Using Compressed Representations; and Self-Supervised Learning of Terrain Traversability from Proprioceptive Sensors.

Source record↗
NASA NTRS1989

Transient-mode liquid phase epitaxial growth of GaAs on GaAs-coated Si substrates prepared by migration-enhanced molecular beam epitaxy

Planar oxide-maskless growth of GaAs was demonstrated by transient-mode liquid phase epitaxy (TMLPE) on GaAs-coated Si substrates that were prepared by migration-enhanced molecular beam epitaxy (MEMBE). In TMLPE, the cool substrate was brought into contact with hot melts for a short time. A GaAs layer as thick as 30 microns was grown in 10 sec. The etch pits observed in TMLPE-grown layers became longer in one direction and decreased in density with increasing the TMLPE epilayer thickness. The density of etch pits in a 20 micron-thick layer was approximately 5 x 10 the 6th/sq cm. Strong bandgap emission elliptically polarized with a major axis perpendicular to the surface was observed at about 910 nm, while deep-level emission from the TMLPE/MEMBE GaAs interface was detected at 980 nm. The photoluminescence intensity divided by the carrier concentration of the TMLPE-grown layer was about 270 times larger than that of the MEMBE-grown layer used as a substrate.

Nakamura, Shuji↗
NASA NTRS2005

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Qiu, Yueming↗