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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Quantum defects in silicon

The dataset used in the publication titled “High-throughput identification of spin-photon interfaces in silicon. Using an automated first-principles computational workflow, we construct a dataset that details simple charged defects in silicon that are relevant for spin-photon interface applications. It encompasses properties vital for quantum defect design, including charged defect stability, excitation energy (determined using the single-shot hybrid functional approach), emission brightness, electronic structures, and more. The dataset encompasses all charged defects stable within the energy gap. We emphasized the importance of defect-bound excitons as telecom band emitters and proposed promising candidates for spin-photon interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charged point defect benchmark of Hybrid and GGA-PBE

Data used by the publication "High-throughput calculations of charged point defect properties with semi-local density functional theory - performance benchmarks for materials screening applications." This work presented an in-depth benchmark analysis of automated, semi-local point defect calculations with a-posteriori corrections, compared to 245 “gold standard” hybrid calculations previously published. We considered three different a-posteriori correction sets for semi-local calculations, implemented in a fully automated workflow, and consider the qualitative and quantitative differences for four different categories of defect information: thermodynamic transition levels, formation energies, fermi levels, and dopability limits. We highlighted the type of qualitative information about point defect properties that can be extracted from high-throughput calculations based on semi-local DFT methods, while also demonstrating the limits of quantitative accuracy that can be achieved by these approaches.

Broberg, Danny↗
DOE OSTI2021

Chloride Reduction of Mn 3+ in Mild Hydrothermal Synthesis of a Charge Ordered Defect Pyrochlore, CsMn 2+ Mn 3+ F 6 , a Canted Antiferromagnet with a Hard Ferromagnetic Component

Geometrically frustrated systems play an important role in studying new physical phenomena and unconventional thermodynamics. Charge ordered defect pyrochlores AM 2+ M 3+ F 6 offer a convenient platform for probing the interplay between electron distribution over M 2+ and M 3+ sites and structural distortions; however, they are limited to compounds with M 2+/3+ = V, Fe, Ni, and Cu due to difficulties in the simultaneous stabilization of other 3d elements in the +2 and +3 oxidation states. Herein, we employ Cl– anions under hydrothermal conditions for the mild reduction of Mn 2 O 3 in concentrated HF to obtain the CsMn 2+ Mn 3+ F 6 composition as a phase pure sample and study its properties. The magnetism of CsMn 2 F 6 was characterized by measuring the magnetic susceptibility and isothermal magnetization data, and a magnetic transition to a canted antiferromagnet state was found at 24.1 K. We determined the magnetic structure of CsMn 2 F 6 using powder neutron diffraction, which revealed successive long-range ordering of the Mn 2+ and Mn 3+ sites that is accompanied by a second transition. As a result, the role and strength of magnetic exchange interactions were characterized using DFT calculations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Absorption and spectra of optical parameters in amorphous solid solutions of the Se-S system

A study of the optical properties of the Se-S system has revealed a correlation between the dependences of optical absorption coefficient {alpha}, effective concentration of charged defects N{sub t}, and characteristic energy E{sub 0} corresponding to the Urbach optical absorption in the spectral region where the Urbach rule works for the Se-S system on the S concentration. These optical properties are controlled by charged defects. It is shown that concentrations of intrinsic charged defects can be changed by variation in composition of the Se-S system. Reflectance spectra of amorphous solid solutions of the Se-S system are studied within the energy range 1-6 eV. Using the Kramers-Kronig method, spectral dependences of optical constants and derivative optical and dielectric functions are calculated. Variation in the spectra of optical parameters with composition of the Se-S system are explained within a cluster model in which the density of electron states is a function of atomic configurations in clusters, i.e., of the character of a short-range order.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of structural defects on charge density waves in 1T-TaS2

Abstract The influence of intrinsic defects of 1T-TaS 2 on charge density waves (CDWs) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron spectroscopy (ARPES), and density functional theory (DFT). We identify several types of structural defects and find that most have a local character limited to a single CDW site, with a single exception which effectively behaves as a dopant, leading to band-bending and affecting multiple neighboring sites. While only one type of defect can be observed by STM topographic imaging, all defects are easily resolved in STS mapping. Our results indicate modulation of the Mott band gap commensurate with the CDW and breaking of the three-fold symmetry of electronic states. DFT calculations (with included Coulomb interactions) are used to investigate the electronic structure, focusing on both sulfur vacancy and oxygen-sulfur substitution. The sulfur vacancy system, characterized with a metallic behavior, is identified as the origin of one of the experimentally observed defects. Additionally, the effect of oxidation of 1T-TaS 2 depends on the substitution site, leading to the heterogeneity of electronic properties.

Chemistry↗
DOE OSTI2011

The influence of {gamma}-ray radiation on electrical properties of CuGaSe{sub 2}

The effect of {gamma}-ray radiation on the conductivity of low-resistivity (10{sup 2}2-10{sup 4} {Omega} cm) and high-resistivity (10{sup 5}-10{sup 7} {Omega} cm) CuGaSe{sub 2} single crystals has been studied in the temperature range 77-330 K. It is found that the resistivity of low-resistivity samples increases as the dose of {gamma}-ray radiation is increased, while the resistivity of high-resistivity samples is practically independent of the radiation dose. It is assumed that a decrease in the conductivity of the low-resistivity samples occurs owing to scattering of free charge carriers at defects (charged centers) formed as a result of irradiation with {gamma}-ray photons. It is found that the dose of the {gamma}-ray irradiation does not affect the temperature dependence of resistivity in the low- and high-resistivity samples in the temperature range 77-300 K.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Milestone Report: Grain growth and fission gas behaviour in doped UO 2 M2MS-18LA0201034

Here, the microstructure of UO 2 can be modified during nuclear fuel fabrication by using additives. Several dopants (e.g. Cr, Ti, V, Mg, Nb) are used to enhance grain growth and densification during sintering. In previous work, we used atomic scale simulation techniques to identify a common interstitial solution mechanism for a range of dopants that form positively charged defects at sintering temperatures. As a result, negatively/positively charged defect concentrations were enhanced/suppressed relative to undoped fuel under the same conditions (temperature and oxygen partial pressure). Importantly U and fission gas migration is vacancy mediated, such that the increase in the concentration uranium vacancies (which have negative charge), due to doping, causes an increase in U and fission gas diffusivity. This is important because U diffusivity is the rate limiting step in mass transport during sintering and bulk fission gas diffusivity is the underlying property that governs fission gas release. In this work, we implement analytical expressions for uranium vacancy concentrations in doped fuel (based on atomic scale results) into mesoscale and engineering scale simulations of sintering and fission gas release. It is shown that densification is dramatically enhanced at 1850 K and 1950 K due to dopant solution and that Mn-doping has a greater effect than the more widely used Cr-doping. The effect of both dopants is strongly temperature dependent and is negligible below approximately 1800 K. The effect of enlarged grain size and enhanced fission gas diffusivity has been included in BISON. Fuel temperatures under normal operating conditions are not sufficient to activate the enhanced fission gas diffusivity mechanism predicted by atomic scale calculations. Therefore, the benefits of enlarged grains for reduced fission gas release should not undermined by enhanced fission gas diffusivity for doped UO 2 .

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2019

Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe 2 Monolayers

Nonradiative charge-carrier recombination in transition-metal dichalcogenide (TMD) monolayers severely limits their use in solar energy conversion technologies. Because defects serve as recombination sites, developing a quantitative description of charge-carrier dynamics in defective TMD monolayers can shed light on recombination mechanisms. Herein we report a first-principles investigation of charge-carrier dynamics in pristine and defective WSe 2 monolayers with three of the most probable defects, namely, Se vacancies, W vacancies, and SeW antisites. We predict that Se vacancies slow down recombination by nearly an order of magnitude relative to defect-free samples by breaking the monolayer’s symmetry and thereby reducing the spectral intensity of the A 1g phonon mode that promotes recombination in the pristine monolayer. By contrast, we find W vacancies accelerate recombination by more than an order of magnitude, with half of the recombination events bypassing charge traps. The subsequent dynamics feature both charge trapping and charge-trap-assisted recombination. Although SeW antisites also slightly accelerate recombination, the predicted mechanism is different from the W vacancy case. First, a shallow energy level traps a photoexcited electron. Then, both shallow- and deep-trap-assisted recombination can occur simultaneously. Accelerated recombination arises for W vacancies and SeW antisites because they introduce new phonon modes that strongly couple to electron and hole dynamics. This work thus provides a detailed understanding of the mechanisms behind charge-carrier recombination in WSe 2 monolayers with distinct defects. Furthermore, materials engineering, particularly to avoid W vacancies, could advance this technology. The insights derived are important for future design of high-performance photoactive devices based on WSe 2 monolayers.

14 SOLAR ENERGY↗
DOE OSTI2023

Persistent dynamic magnetic state in artificial honeycomb spin ice

Abstract Topological magnetic charges, arising due to the non-vanishing magnetic flux on spin ice vertices, serve as the origin of magnetic monopoles that traverse the underlying lattice effortlessly. Unlike spin ice materials of atomic origin, the dynamic state in artificial honeycomb spin ice is conventionally described in terms of finite size domain wall kinetics that require magnetic field or current application. Contrary to this common understanding, here we show that a thermally tunable artificial permalloy honeycomb lattice exhibits a perpetual dynamic state due to self-propelled magnetic charge defect relaxation in the absence of any external tuning agent. Quantitative investigation of magnetic charge defect dynamics using neutron spin echo spectroscopy reveals sub-ns relaxation times that are comparable to the relaxation of monopoles in bulk spin ices. Most importantly, the kinetic process remains unabated at low temperature where thermal fluctuation is negligible. This suggests that dynamic phenomena in honeycomb spin ice are mediated by quasi-particle type entities, also confirmed by dynamic Monte-Carlo simulations that replicate the kinetic behavior. Our research unveils a macroscopic magnetic particle that shares many known traits of quantum particles, namely magnetic monopole and magnon.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation 15–25 nm beneath the diamond surface and annealing. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Here, combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial-resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.

36 MATERIALS SCIENCE↗
DOE OSTI2018

The Unified Electrochemical Band Diagram Framework: Understanding the Driving Forces of Materials Electrochemistry

Recent work that establishes a picture of the driving forces that govern material transformations and degradation in electrochemical environments to enable the ab initio design of electrochemical materials is highlighted. Select prototype systems are used to describe how the interplay between materials properties such as crystal field splitting, band edge energies, surface termination, material length scale, dielectric constant, and isoelectric point, and electrolyte properties such as pH and ion type, impacts electrochemical behavior - i.e., redox potentials, reaction enthalpies, reactivity, and decoupled ionic/electronic processes. Ab initio modeling of charged defects and intercalants within the grand canonical unified electrochemical band-diagram (UEB) framework is shown to enable the quantitative prediction of electrochemical materials behavior. UEB combines electrochemical theory, charged defect theory, and band diagram descriptions and can be used both for materials discovery and development. First, a pedagogical description of the UEB framework is presented, and then the application of this framework to reveal mechanisms for high rate electronic charge storage in cation incorporated α.-MnO 2 and λ-MnO 2 , high desalination efficiency of thin-film NaMn 4 O 8 , and the flat charge/discharge profile of FePO 4 is reviewed. Finally, new prospects for the application of the UEB framework to electrolyte design, interfacial engineering, and catalysis are suggested.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Density functional theory study of the point defect energetics in y- LiAlO2, Li2ZrO3 and Li2TiO3 materials

The defect energetics in y-LiAlO2, Li2 TiO3, and Li2ZrO3 materials used in tritium-producing burnable absorber rods and fusion solid breeder applications was investigated using density functional theory calculations. A comprehensive analysis of the charged defects was performed for cation and anion vacancies, interstitials, antisite defects, and 3H interstitial and substitutional defects to understand the defect structures at different charge states and their stability as a function of the electron chemical potential across the electronic band gap of crystals at operating temperature and oxygen partial pressure conditions. Through investigation of the local bonding configurations and projected electronic density of states of the 3H related charged defects, including 3H interstitial (3Hint), 3Hint bound with an oxygen interstitial, and substitutional 3H defects on the Li, O, and M (M¼ Al, Ti, and Zr) sites (3HLi, 3HO, and 3HM), the 3H states of these defects were distinguished, i.e. triton (3Hþ), neutral 3H (3H0), and tritide (3H-). The two stable 3H related defects under the Li2O-LiOH rich condition at T ¼ 1000 K, between P(O2) ¼ 10^-5 and 10^-25 atm were found to be 3H interstitial (3Hint) with charge of þ1 and neutral 3HLi (substitutional 3H on the Li site) in g-LiAlO2, Li2ZrO3, and Li2TiO3 materials. For Li2TiO3, the stability of the 3HO with charge of þ1 and 3HM with charge of 3 becomes comparable to that of 3Hint atm at P(O2) ¼ 1025 atm. Overall, our results indicate the energy cost to form the stable 3H defect species (3Hint with charge of þ1 and neutral 3HLi) in g-LiAlO2 material are higher than those of Li2TiO3 and Li2ZrO3 materials at T ¼ 1000 K, between P(O2) ¼ 10^-5 and 10^-25 atm. Interactions between the point defects and the 3H species as a function of the electron chemical potential across the band gap of the materials were also examined. All the three materials exhibit strong interactions between the 3Hint and the O vacancy, Li vacancy, and O interstitial defects with the strongest interactions found in the case of y-LiAlO2 phase, indicating a higher tendency to trap 3H at such point defects in y-LiAlO2.

Charged defect analysis, Tritium-producing burnabl↗
DOE OSTI2014

Optimizing electrical poling for tetragonal, lead-free BZT-BCT piezoceramic alloys

The piezoelectric properties of tetragonal BZT–BCT materials have been shown to be improved by using the field cooling poling method. It is shown that the piezoelectric coefficient of tetragonal BZT–BCT materials increases with higher poling temperature, and the optimum poling temperature lies near the Curie temperatures for a broad range of compositions. It is also observed from in situ X-ray diffraction measurements with an applied electric field that the magnitude of domain alignment is enhanced with electrical poling at higher electric fields, whereas the remnant ferroelastic domain texture is not affected. Furthermore, these results show a direct correlation between the development of internal bias field, which is induced by the accumulation of defect charge carriers, and the enhanced piezoelectric coefficient. These observations suggest an important role played by the alignment of defect charge carriers in achieving optimum piezoelectric coefficient in lead-free piezoelectric ceramics.

Li, Binzhi↗
DOE OSTI2025

Toward Quality Control in Perovskite Solar Cell Fabrication: Spot-Like Processing Defects Disrupt Charge Transport Layers and Promote Ag Metal Electrode Intrusion

Metal halide perovskite (MHP) photovoltaics provide high efficiencies with less stringent processing requirements than traditional photovoltaic materials. However, processing related defects must be suppressed as they can lead to decreases in initial device efficiency and potentially compromise long-term device operation. In this work we investigate morphological defects in MHP devices using luminescence imaging followed by in-depth structural and composition analysis using electron microscopy-based methods. We identify several different classes of spot-like processing-related defects and observe that a single device structure may contain multiple types of these defects. The presence of these defects in devices with different layer structures and absorber chemistries makes them relevant to the perovskite photovoltaic community as a whole. The defects are associated with voids in the perovskite layer, inclusions (glass, migrated Ag, dust), thickness variations, hole transport layer disruption with anomalous crystal growth, and electron transport layer disruptions that could allow Ag intrusion and lead to local shunts. As perovskite photovoltaic technology matures, mitigation of such defects is critical to improving not only initial performance but also the long-term stability required for industrial applications.

14 SOLAR ENERGY↗
DOE OSTI2023

Nanometer-scale electrical potential imaging on absorber of CdSeTe solar cells

Here, we report on nm-scale electrical potential imaging throughout As-doped and Cu-doped CdSeTe absorbers using Kelvin probe force microscopy (KPFM). The potential imaging was conducted both laterally and vertically on beveled films using ion milling at small glancing angle. KPFM images electrical potential on the beveled surface and assesses defect charging in the subsurface region within a screening length from the beveled surface. We found that the grain boundaries were positively charged and that there were significant potential fluctuations in both grain boundary versus grain interior and intragrain. We further found that these potential fluctuations decreased significantly toward the front interface. Time of flight secondary ion mass spectrometry imaging shows that Se content increased toward the front interface, consistent with Se passivation of defects. The potential fluctuation was induced by defect charging, and the results elucidate different details of the defect configurations and grain structures of the films with different CdCl 2 treatment temperatures in the As-doped CdSeTe. The defect configurations in the region near the front interface can be a main factor contributing to the device performance difference. Our potential imaging provides insights about the defects throughout the absorber films, and shows that the potential fluctuation has a direct correlation to the V oc deficit.

14 SOLAR ENERGY↗
DOE OSTI2015

Formation of strain-induced quantum dots in gated semiconductor nanostructures

A long-standing mystery in the field of semiconductor quantum dots (QDs) is: Why are there so many unintentional dots (also known as disorder dots) which are neither expected nor controllable. It is typically assumed that these unintentional dots are due to charged defects, however the frequency and predictability of the location of the unintentional QDs suggests there might be additional mechanisms causing the unintentional QDs besides charged defects. We show that the typical strains in a semiconductor nanostructure from metal gates are large enough to create strain-induced quantum dots. We simulate a commonly used QD device architecture, metal gates on bulk silicon, and show the formation of strain-induced QDs. The strain-induced QD can be eliminated by replacing the metal gates with poly-silicon gates. Thus strain can be as important as electrostatics to QD device operation operation.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Native defects in Tl{sub 6}SI{sub 4}: Density functional calculations

Tl{sub 6}SI{sub 4} is a promising room-temperature semiconductor radiation detection material. Here, we report density functional calculations of native defects and dielectric properties of Tl{sub 6}SI{sub 4}. Formation energies and defect levels of native point defects and defect complexes are calculated. Donor-acceptor defect complexes are shown to be abundant in Tl{sub 6}SI{sub 4}. High resistivity can be obtained by Fermi level pinning by native donor and acceptor defects. Deep donors that are detrimental to electron transport are identified and methods to mitigate such problem are discussed. Furthermore, we show that mixed ionic-covalent character of Tl{sub 6}SI{sub 4} gives rise to enhanced Born effective charges and large static dielectric constant, which provides effective screening of charged defects and impurities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

High-throughput identification of spin-photon interfaces in silicon

Color centers in host semiconductors are prime candidates as spin-photon interfaces for quantum applications. Finding an optimal spin-photon interface in silicon would move quantum information technologies toward a mature semiconducting host. However, the space of possible charged defects is vast, making the identification of candidates from experiments alone extremely challenging. Here, we use high-throughput first-principles computational screening to identify spin-photon interfaces among more than 1000 charged defects in silicon. The use of a single-shot hybrid functional approach is critical in enabling the screening of many quantum defects with a reasonable accuracy. We identify three promising spin-photon interfaces as potential bright emitters in the telecom band: Ti$^+_i$, Fe$^0_i$, and Ru$^0_i$. These candidates are excited through defect-bound excitons, stressing the importance of such defects in silicon for telecom band operations. Our work paves the way to further large-scale computational screening for quantum defects in semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗