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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Normalization of periodontal tissues in osteopetrotic mib mutant rats, treated with CSF-1

The osteopetrotic mib mutation in rats causes defects in the skeletal bone tissue in young animals. These defects, i.e. slow bone remodelling, changes in both crystallinity and mineral content, are transient and undergo normalization, even without any treatment in 6-wk-old animals. Treatment with CSF-1 (colony stimulating factor-1) accelerates the normalization process in skeletal bones. The periodontal tissues around the apices of incisors show abnormalities caused by the slow remodelling process of the mandible bone tissue, the deficiency of osteoclasts and their abnormal morphology, as well as the disorganization of periodontal ligament fibres. In contrast to the skeletal tissues, these abnormalities would not undergo spontaneous normalization. Under treatment with colony stimulating factor 1 (CSF-1), the primitive bone trabeculae of mandible are resorbed and the normalization of the number of osteoclasts and their cytology occurs. The organization of the periodontal ligament fibres is partially restored, resembling the histological structure of the normal one.

NASA Discipline Musculoskeletal↗
NASA NTRSDate not supplied

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗
NASA NTRS1994

Cubic GaS: A Surface Passivator For GaAs

Thin films of cubic form of gallium sulfide (GaS) formed on surfaces of gallium arsenide (GaAs) substrates via metal/organic chemical vapor deposition (MOCVD). Deposited cubic GaS, crystalline lattice matched to substrate GaAs, neutralizes electrically active defects on surfaces of both n-doped and p-doped GaAs. Enabling important GaAs-based semiconducting materials to serve as substrates for metal/insulator/semiconductor (MIS) capacitors. Cubic GaS enables fabrication of ZnSe-based blue lasers and light-emitting diodes. Because GaS is optically transparent, deposited to form window layers for such optoelectronic devices as light-emitting diodes, solar optical cells, and semiconductor lasers. Its transparency makes it useful as interconnection material in optoelectronic integrated circuits. Also useful in peeled-film technology because selectively etched from GaAs.

Hepp, Aloysius F.↗
NASA NTRS2012

Rhombohedral cubic semiconductor materials on trigonal substrate with single crystal properties and devices based on such materials

Growth conditions are developed, based on a temperature-dependent alignment model, to enable formation of cubic group IV, group II-V and group II-VI crystals in the [111] orientation on the basal (0001) plane of trigonal crystal substrates, controlled such that the volume percentage of primary twin crystal is reduced from about 40% to about 0.3%, compared to the majority single crystal. The control of stacking faults in this and other embodiments can yield single crystalline semiconductors based on these materials that are substantially without defects, or improved thermoelectric materials with twinned crystals for phonon scattering while maintaining electrical integrity. These methods can selectively yield a cubic-on-trigonal epitaxial semiconductor material in which the cubic layer is substantially either directly aligned, or 60 degrees-rotated from, the underlying trigonal material.

Park, Yeonjoon↗
NASA NTRS1982

Volcanism and igneous processes in small icy satellites

Evidence for the production of endogenic processes of the small Saturnian satellites by igneous activity of low melting point NH3-H2O magma heated radiogenically is presented. An initial state of the inner satellites is modeled as a homogeneous mixture of particulate silicates and ices. Conductive transport is assumed to have either combined with heat capacity in a mixture of crystalline phases, or to have been reduced by the presence of dust, defects, vitreous or amorphous phases, and clathrates. The extent to which a eutectic melt could form is calculated in terms of the volume percentage of melt, with all heating above 175 K going toward overcoming the latent heat of the eutectic mix. Mimas and Enceladus were treated as free from radiogenic heat sources, which were significant for Tethys, Dione, Rhea, and Iapetus. The migrations of inner materials to form surface structures and seal off the interiors of the moons are described.

Stevenson, D. J.↗
NASA NTRS2021

Phase Diagram, Melt Growth and Characterization of Cd0.8Zn0.2Te Crystals for X-Ray Detector

In this study, the solidus curve of the Cd0.8Zn0.2Te homogeneity range was constructed from the partial pressure measurements by optical absorption technique which provided the information of the melt growth parameters to process crystals with the required electrical resistivity. The melt growth of Cd0.8Zn0.2Te crystals were then processed by directional solidification under controlled Cd overpressure. During the growth experiments, several procedures have been developed to improve the crystalline quality: (1) minimizing the contamination of impurities (2) improving the structural defects and (3) minimizing the Te-precipitates within the grown crystals to enhance charge transport properties. Additionally, the thermal conductivity, electrical conductivity, and Seebeck coefficient of a vapor-grown CdTe and two melt-grown Cd0.8Zn0.2Te crystals were measured between 190oC and 780oC to provide an in-depth understanding of the thermal and electrical conduction mechanisms of the crystals as well as the prospect of its thermoelectric applications.

x-ray detector↗
NASA NTRS1982

Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected.

Natesh, R.↗
NASA NTRS1987

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS2012

Transmission Electron Microscopy (TEM) Sample Preparation of Si(1-x)Gex in c-Plane Sapphire Substrate

The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.

Kim, Hyun Jung↗
NASA NTRS2008

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Hepp, Aloysius F.↗
NASA NTRS1998

Ground Based Program for the Physical Analysis of Macromolecular Crystal Growth

During the past year we have focused on application of in situ Atomic Force Microscopy (AFM) for studies of the growth mechanisms and kinetics of crystallization for different macromolecular systems. Mechanisms of macrostep formation and their decay, which are important in understanding of defect formation, were studied on the surfaces of thaumatin, catalase, canavalin and lysozyme crystals. Experiments revealed that step bunching on crystalline surfaces occurred either due to two- or three-dimensional nucleation on the terraces of vicinal slopes or as a result of uneven step generation by complex dislocation sources. No step bunching arising from interaction of individual steps in the course of the experiment was observed. The molecular structure of the growth steps for thaumatin and lipase crystals were deduced. It was further shown that growth step advance occurs by incorporation of single protein molecules. In singular directions growth steps move by one-dimensional nucleation on step edges followed by lateral growth. One-dimensional nuclei have different sizes, less then a single unit cell, varying for different directions of step movement. There is no roughness due to thermal fluctuations, and each protein molecule which incorporated into the step remained. Growth kinetics for catalase crystals was investigated over wide supersaturation ranges. Strong directional kinetic anisotropy in the tangential step growth rates in different directions was seen. The influence of impurities on growth kinetics and cessation of macromolecular crystals was studied. Thus, for catalase, in addition to pronounced impurity effects on the kinetics of crystallization, we were also able to directly observe adsorption of some impurities. At low supersaturation we repeatedly observed filaments which formed from impurity molecules sedimenting on the surfaces. Similar filaments were observed on the surfaces of thaumatin, canavalin and STMV crystals as well, but the frequency was low compared with catalase crystallization. Cessation of growth of xylanase and lysozyme crystals was also observed and appeared to be a consequence of the formation of dense impurity adsorption layers. Attachment: "An in situ AFM investigation of catalase crystallization", "Atomic force microscopy studies of living cells: visualization of motility, division, aggregation, transformation, and apoptosis", AFM studies on mechanisms of nucleation and growth of macromolecular crystals", and "In situ atomic force microscopy studies of surface morphology, growth kinetics, defect structure and dissolution in macromolecular crystallization".

Malkin, Alexander J.↗
NASA NTRS1999

Charge Transfer Process During Collision of Riming Graupel Pellet with Small Ice Crystals within a Thundercloud

A charge transfer process during the collision of a riming graupel pellet and an ice-crystal at low temperature is proposed. During riming, the surface structure of graupel deviates from perfect crystalline structure. A concept of quasi-solid layer (QSL) formation on the surface is introduced. This QSL contains defects formed during riming. In absence of impurities, positively charged X-defect abundance is considered in the outer layer. These defects are assumed to be the charge carriers during the charge transfer process. Some part of the QSL is stripped off by the colliding ice crystals, which thereby gain some positive charge, leaving the graupel pellet negatively charged. With the proposed model, fC to pC of charge transfer is observed per collision. A transition temperature between -10 C to -15 C is also noted beyond which the QSL concept does not hold. This transition temperature is dependent on the bulk liquid water content of the cloud.

Datta, Saswati↗
NASA NTRS2012

885-nm Pumped Ceramic Nd:YAG Master Oscillator Power Amplifier Laser System

The performance of a traditional diode pumped solid-state laser that is typically pumped with 808-nm laser diode array (LDA) and crystalline Nd:YAG was improved by using 885-nm LDAs and ceramic Nd:YAG. The advantage is lower quantum defect, which will improve the thermal loading on laser gain medium, resulting in a higher-performance laser. The use of ceramic Nd:YAG allows a higher Nd dopant level that will make up the lower absorption at the 885-nm wavelength on Nd:YAG. When compared to traditional 808-nm pump, 885-nm diodes will have 30% less thermal load (or wasted heat) and will thus see a similar percentage improvement in the overall laser efficiency. In order to provide a more efficient laser system for future flight missions that require the use of low-repetition- rate ( 1% Nd. To make certain that the absorption at 885 nm is on the same par as the 808-nm diode, the Nd:YAG material needs to be doped with higher concentration of Nd. Ceramic Nd:YAG is the only material that can be tailored to specific needs.

Yu, Anthony↗
NASA NTRS1992

Crystallization of lithium borate glasses

The glass-forming ability and crystallization behavior of lithium borate compositions, in the diborate-to-metaborate-range, were studied. In particular, the nature and sequence of formation of crystalline phases and the tendency toward devitrification were investigated as functions of temperature, thermal history and batch composition. It was found that the sequence of crystalline phase formation was sensitive to all of the three latter factors, and it was observed that under certain conditions metastable defect structures of the metaborate can appear.

Goktas, A. A.↗
NASA NTRS2007

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well suited to such applications.

Beernink, Kevin↗
NASA NTRS1993

Catalytic crystallization of ices by small silicate smokes at temperatures less than 20K

Samples of methanol and water ices condensed from the vapor onto aluminum substrates at low temperatures (below approximately 80 K) form amorphous ices; annealing at temperatures in excess of 140-155 K is usually required to convert such amorphous samples to crystalline ices. However, we have found that when either methanol or water vapor is deposited on to aluminum substrates that have been coated with a thin (0.1-0.5 mm) layer of amorphous silicate smoke, the ices condense in crystalline form. We believe that crystalline ice forms as the result of energy liberated at the ice/silicate interface perhaps due to weak bonding of the ice at defect sites on the grains and the very high surface to volume ratio and defect density of these smokes. Annealing of amorphous water ice mixed with more volatile components such as methane, carbon monoxide, etc., has been suggested as an efficient way to produce clatherates in the outer solar nebula and thus explain the volatile content of comets and icy satellites of the outer planets. This hypothesis may need to be re-examined if amorphous ice does not form on cold silicate grains.

Moore, M.↗
NASA NTRS1988

Shock metamorphism of deformed quartz

The effect produced by shock loading (to peak pressures of 12 and 24) on deformed synthetic quartz containing a dislocation and abundant bubbles and small inclusions was investigated, and the relationships between preexisting dislocation density shock lamellae in the target material were examined. The resultant material was found to be inhomogeneously deformed and extremely fractured. Results of TEM examinations indicate that no change in dislocation density was caused by shock loading except in regions containing shock lamellae, where the dislocation density was lowered. The shock-induced defects tend to nucleate on and be controlled by preexisting stress concentrators; shock lamellae, glassy veins, and most curviplanar defects form in tension, presumably during release. An extremely mobile silica fluid is formed and injected into fractures during release, which forcibly removes crystalline fragments from vein walls. It is concluded that shock deformation in quartz is dominated by fracture and melting.

Gratz, Andrew J.↗