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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Near-Infrared Photon-Counting Camera for High-Sensitivity Observations

The dark current of a transferred-electron photocathode with an InGaAs absorber, responsive over the 0.9-to-1.7- micron range, must be reduced to an ultralow level suitable for low signal spectral astrophysical measurements by lowering the temperature of the sensor incorporating the cathode. However, photocathode quantum efficiency (QE) is known to reduce to zero at such low temperatures. Moreover, it has not been demonstrated that the target dark current can be reached at any temperature using existing photocathodes. Changes in the transferred-electron photocathode epistructure (with an In- GaAs absorber lattice-matched to InP and exhibiting responsivity over the 0.9- to-1.7- m range) and fabrication processes were developed and implemented that resulted in a demonstrated >13x reduction in dark current at -40 C while retaining >95% of the approximately equal to 25% saturated room-temperature QE. Further testing at lower temperature is needed to confirm a >25 C predicted reduction in cooling required to achieve an ultralow dark-current target suitable for faint spectral astronomical observations that are not otherwise possible. This reduction in dark current makes it possible to increase the integration time of the imaging sensor, thus enabling a much higher near-infrared (NIR) sensitivity than is possible with current technology. As a result, extremely faint phenomena and NIR signals emitted from distant celestial objects can be now observed and imaged (such as the dynamics of redshifting galaxies, and spectral measurements on extra-solar planets in search of water and bio-markers) that were not previously possible. In addition, the enhanced NIR sensitivity also directly benefits other NIR imaging applications, including drug and bomb detection, stand-off detection of improvised explosive devices (IED's), Raman spectroscopy and microscopy for life/physical science applications, and semiconductor product defect detection.

Jurkovic, Michael↗
NASA NTRS2018

Light Microscopy Module Biophysics - 4 (LMM-B4)

Compare incorporation of protein aggregates into growing protein crystals on ISS (International Space Station) and on Earth. Measure growth rates in 1g (1 gravity) versus microgravity (micro-g) for different size aggregates of proteins. Compare the defect density and crystal quality via fluorescent-based atomic force microscopy and X-ray diffraction quality of crystals grown at different rates in a 1g environment.

Penn, Benjamin G.↗
NASA NTRSDate not supplied

An Electron Backscatter Diffraction (EBSD)-Based Automated Tool for Ceramic Capacitor Grain Size Analysis

Ceramic capacitors continue to be recurring problem parts for NASA, despite best efforts to screen out potential defects and failures through environmental and electrical testing and nondestructive inspection techniques such as acoustic microscopy. The physical properties of ceramic capacitors necessitates thin dielectric layers capable of withstanding significant electric fields. Any defects in those ceramic layers can result in reduced insulation resistance failure modes including short circuit failures, so the quality and consistency of the dielectric material is critical. The size of the individual ceramic grains in the dielectric material is a critical parameter. However, judging “grain size” is not so simple—in a single capacitor there can be wide variation in grain sizes observed. It is theorized that by studying the grain size distributions of “known good” and “known bad” lots of capacitors, some conclusions could be drawn that would allow us to better predict to the reliability of future lots based on grain size distributions. The initial goal of this effort was to find or develop an automated tool that could inspect a capacitor and return grain size distribution results.

Robert Hodson↗
NASA NTRS1987

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.↗
NASA NTRS1978

Scanning microscopy in microcircuit failure analysis

A three-phase microcircuit failure analysis procedure is presented. In the first phase, the device is nondestructively tested and the data obtained is correlated with the circumstances surrounding the failure event. The device is then subjected to a limited nondestructive analysis dominated by optical and scanning electron microscopy (SEM). Knowing that microcircuits usually fail from manufacturing defects or misuse, the analyst looks for one of the probable mechanisms. The SEM has two special operating modes that provide unique data for nondestructive analysis: voltage contrast and conductive current. These are used with other SEM modes and surface analysis techniques to analyze complicated microcircuits. The last phase includes the destructive procedures. The end product of these analyses is a corrective action that will yield a highly reliable system.

Nicolas, D. P.↗
NASA NTRS1986

Nondestructive Evaluation (NDE) of structural ceramics by photoacoustic microscopy

Photoacoustic microscopy (PAM) was utilized to detect surface and subsurface defects in structural ceramic materials. A computerized PAM data acquisition, color imaging and analysis system was developed and used. Subsurface simulated cylindrical holes can be detected to about 1 mm below the interrograting surface. Simulated tight surface cracks of 96 microns length and 48 microns depth can be detected in these materials under optimum conditions.

Khandelwal, P. K.↗
NASA NTRS1981

EBIC/TEM investigations of process-induced defects in EFG silicon ribbon

Electron bombardment induced conductivity and scanning transmission electron microscopy observations on unprocessed and processed edge-defined film-fed growth ribbon show that the phosphorus diffused junction depth is not uniform, and that a variety of chemical impurities precipitate out during processing. Two kinds of precipitates are found (1) 10 nm or less in size, located at the dislocation nodes in sub-boundary like dislocation arrangements formed during processing and (2) large precipitates, the chemical composition of which has been partially identified. These large precipitates emit dense dislocations tangles into the adjacent crystal volume.

Cunningham, B.↗
NASA NTRS1989

Ballistic-electron-emission microscopy investigation of Schottky barrier interface formation

Ballistic-electron-emission microscopy (BEEM) has been used to investigate the origin of defects at the Au/GaAs(100) Schottky barrier interface. In addition, molecular beam epitaxy (MBE) and in situ fabrication methods have been employed to control Schottky barrier interface properties. BEEM characterization combined with MBE methods has enabled the development of a near-ideal Schottky barrier interface with drastically reduced defect density.

Hecht, M. H.↗
NASA NTRS1991

New optical approaches to the quantitative characterization of crystal growth, segregation and defect formation

Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.

Carlson, D. J.↗
NASA NTRS1983

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Natesh, R.↗
NASA NTRS1997

Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

Silicon carbide (SiC) semiconductor technology has been advancing rapidly, but there are numerous crystal growth problems that need to be solved before SiC can reach its full potential. Among these problems is a need for an improvement in the surface morphology of epitaxial films that are grown to produce device structures. Various processes before and during epilayer growth lead to the formation of morphological defects observed in SiC epilayers grown on SiC substrates. In studies of both 6H and 4H-SiC epilayers, atomic force microscopy (AFM) and other techniques have been used to characterize SiC epilayer surface morphology. In addition to the well-known micropipe defect, SiC epilayers contain growth pits, triangular features (primarily) in 4H-SiC, and macro step due to step bunching. In work at NASA Lewis, it has been found that factors contributing to the formation of some morphological defects include: defects in the substrate bulk, defects in the substrate surface caused by cutting and polishing the wafer, the tilt angle of the wafer surface relative to the basal plane, and growth conditions. Some of these findings confirm results of other research groups. This paper presents a review of published and unpublished investigations into processes that are relevant to epitaxial film morphology.

Powell, J. A.↗
NASA NTRS1986

Development of high-efficiency solar cells on silicon web

Work was performed to improve web base material with a goal of obtaining solar cell efficiencies in excess of 18% (AM1). Efforts in this program are directed toward identifying carrier loss mechanisms in web silicon, eliminating or reducing these mechanisms, designing a high efficiency cell structure with the aid of numerical models, and fabricating high efficiency web solar cells. Fabrication techniques must preserve or enhance carrier lifetime in the bulk of the cell and minimize recombination of carriers at the external surfaces. Three completed cells were viewed by cross-sectional transmission electron microscopy (TEM) in order to investigate further the relation between structural defects and electrical performance of web cells. Consistent with past TEM examinations, the cell with the highest efficiency (15.0%) had no dislocations but did have 11 twin planes.

Meier, D. L.↗
NASA NTRS1993

Electron Microscopy of Natural and Epitaxial Diamond

Semiconducting diamond films have the potential for use as a material in which to build active electronic devices capable of operating at high temperatures or in high radiation environments. Ultimately, it is preferable to use low-defect-density single crystal diamond for device fabrication. We have previously investigated polycrystalline diamond films with transmission electron microscopy (TEM) and scanning electron microscopy (SEM), and homoepitaxial films with SEM-based techniques. This contribution describes some of our most recent observations of the microstructure of natural diamond single crystals and homoepitaxial diamond thin films using TEM.

Posthill, J. B.↗
NASA NTRSDate not supplied

Evaluation Marcelling in Composites using Ultrasonic Guided Wave

Thermoplastic composite (TPC) material seldom manifests in-plane fiber waviness during manufacturing. In-plane fiber waviness is called marcelling. Marcelling com-promises the composite strength and performance. When present in a structure, marcelling is not only a surface defect but can extend partially along the thickness of the composite. There is no established nondestructive evaluation (NDE) method to detect and quantify marcelling in composite. Ultrasonic guided waves can saturate the complete thickness of a composite structure. Thus, physics of guided wave creates an opportunity to detect and quantify the marcelling in composites. Before guided waves could be used to detect marcelling, it is necessary to quantify the marcelling in the structure and identify the marcelling affected zones (MAZE). In this research first, high frequency scanning acoustic microscopy (SAM) was performed to quantify the marcelling and statistical distribution of the defects at different MAZE was obtained. Next the MAZE with known statistical distribution of quantified marcelling (marcelling wavelength and marcelling amplitude) was inspected using ultrasonic guided wave setup. The method quantified the guided wave feature as a function of quantitative degree of marcelling. The overarching objective of this research is to implement post process NDE inspection of TPC large structures where in plane fiber waviness or marcelling can be detected and MAZEs could be identified. Primary fining is that the reduction of wave velocity and amplitude of ultrasonic guided wave could be good indicators of MAZE. However, more rigorous calibration is necessary where inspection direction is carefully devised with respect to the marcelling.

HiCAM↗
NASA NTRS2024

Wear and Neutron Shielding Resilience of Titanium-Hexagonal Boron Nitride Coatings Against Extreme Lunar Radiation and Thermal Cycles

Ti6Al4V and Al6061 are aerospace alloys used in lunar structural components and rovers owing to their high specific strength. However, they deteriorate rapidly when subjected to demanding conditions of the lunar environment, such as extreme thermal cycles, solar particle radiation, and abrasive regolith. Cryo-milled powders were employed to deposit hBN-reinforced protective titanium coatings through plasma spray (atmospheric APS and vacuum-VPS) with 2 and 10 vol% of hBN on Ti6Al4V and Al6061 substrates. These coatings were evaluated for durability under extreme lunar-like conditions, including thermal cycling, electron radiation, and synergistic (electron radiation-thermal cycle) exposure. The coatings exhibited radiation-induced hardening, resulting in a substantial increase in their microhardness ~20–40% compared to virgin condition. Bright-field transmission electron microscopy (TEM) analysis reveals the presence of high dislocation densities, black dot defects, and dislocation clusters, providing evidence of the severe impact of synergistic environmental stresses. Ball-on-disk tribological tests were conducted in the presence of JSC-1 A lunar regolith simulant to evaluate the wear performance of coatings. Compared to conventional Ti6Al4V substrate, 50%, 90%, and 70% reductions in wear volume were observed in the Ti/2 vol% hBN coatings in thermal-only, radiation-only, and synergistic environments. Neutron shielding tests indicate that the synergistic coatings offer higher neutron shielding performance by up to 28% compared to virgin coatings, attributed to improved neutron capture by 10B isotopes. Upon a comprehensive assessment and ranking of multiple coatings under varying conditions, the VPS Ti/2 vol% hBN coating emerges as the top choice for protection against extreme radiation and thermal cycles for future lunar explorations.

Boron nitride↗